onsemi-NTBG045N065SC1
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onsemi
” or its affiliates and/or
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onsemi
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onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf.
onsemi
reserves the right to make changes at any time to any products or information herein, without
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onsemi
makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using
onsemi
products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by
onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hol
d
onsemi
and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
N-Channel, D2PAK-7L
650
V
,
3
1 m
W
, 62 A
NTBG045N065SC1
Features
•
Typ. R
= 31 m
W
@ V
= 18 V
GS
= 45 m
W
@ V
= 15 V
GS
DS(on)
Typ. R
DS(on)
•
Ultra Low Gate Charge (Q
= 105 nC)
G(tot)
•
Low Effective Output Capacitance (C
= 168 pF)
V
R
MAX
I MAX
D
oss
(BR)DSS
DS(ON)
•
100% Avalanche Tested
650 V
50 m
W
@ 18 V
62 A
•
T =
175
°
C
J
•
RoHS Compliant
Drain (TAB)
Typical Applications
•
SMPS (Switching Mode Power Supplies)
•
Solar Inverters
•
UPS (Uninterruptable Powere Supplies)
•
Energy Storages
Gate (Pin 1)
Driver Source (Pin 2)
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Power Source (Pins 3, 4, 5, 6, 7)
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
650
Unit
V
V
DSS
N
−
CHANNEL MOSFET
Gate
−
to
−
Source Voltage
V
−
8/+22
−
5/+18
V
GS
Recommended Operation Val-
ues of Gate
−
Source Voltage
V
GSop
V
T
< 175
°
C
= 25
°
C
C
Continuous Drain
I
62
242
44
A
W
A
D
Steady
T
C
State
Power Dissipation
P
D
Continuous Drain
I
D
D2PAK
−
7L
CASE 418BJ
Steady
State
T
C
= 100
°
C
= 25
°
C
Power Dissipation
P
121
184
W
D
MARKING DIAGRAM
T
I
A
C
DM
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
°
C
J
stg
+175
BG045N
065SC1
AYWWZZ
Source Current (Body Diode)
I
S
56
72
A
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
L
pk
Maximum Lead
T
e
mperature for Soldering, 1/8
″
T
245
°
C
L
BG045N065SC1 = Specific Device Code
from Case for 10 Seconds
A
Y
= Assembly Location
=
Y
e
ar
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
WW =
Work Week
ZZ
= Lot Traceability
1. Surface
mounted on a FR
−
4 board using1 in2 pad of 2 oz copper.
2. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive
rating, limited by max junction temperature.
ORDERING INFORMATION
this data sheet.
4. E
of 72 mJ is based on starting T
= 25
°
C; L = 1 mH, I
= 12 A, V
= 50 V,
AS
GS
J
AS
DD
V
= 18
V
.
©
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
March, 2021
−
Rev. 0
NTBG045N065SC1/D
NTBG045N065SC1
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.62
40
Units
°
C/W
°
C/W
R
θ
JC
JA
R
θ
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise stated)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain
−
to
−
Source Breakdown Voltage
V
V
= 0
V
, I
= 1
m
A
650
−
−
−
V
(BR)DSS
GS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
−
0.13
V/
°
C
(BR)DSS
J
I
D
= 20 mA, refer to 25
°
C
Zero Gate Voltage Drain Current
I
T =
25
°
C
−
−
−
−
−
−
10
1
m
A
mA
nA
DSS
J
V
= 0 V
= 650 V
GS
V
DS
T =
175
°
C
J
Gate
−
to
−
Source Leakage Current
ON CHARACTERISTICS
I
V
= +18/
−
5
V
, V
= 0 V
250
GSS
GS
DS
Gate Threshold Voltage
V
R
V
= V
, I
= 8 mA
1.8
−
5
−
2.8
−
4.3
+18
−
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain
−
to
−
Source On Resistance
V
GOP
V
= 15 V, I
= 25 A, T
= 25
°
C
45
31
40
16
m
W
DS(on)
GS
D
J
V
GS
= 18 V, I
= 25 A, T
= 25
°
C
−
50
−
D
J
V
GS
= 18 V, I
= 25 A, T
= 175
°
C
−
D
J
Forward Transconductance
g
FS
V
= 10 V, I
= 25 A
−
−
S
DS
GS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
−
−
−
−
−
−
−
1890
168
15
−
−
−
−
−
−
−
pF
ISS
V
= 0
V
, f = 1
M
Hz,
Output Capacitance
C
OSS
RSS
V
DS
= 325 V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
Q
105
27
nC
G(TOT)
V
=
−
5/18
V
, V
=
5
20
V
,
DS
GS
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
Q
GS
I
D
= 25 A
30
GD
3.1
W
f = 1 MHz
Gate
−
Resistance
R
G
SWITCHING CHARACTERISTICS
Turn
−
On Delay Time
t
−
−
−
−
−
−
−
13
14
26
7
−
−
−
−
−
−
−
ns
d(ON)
Rise Time
t
r
Turn
−
Off Delay Time
t
d(OFF)
V
GS
I
=
−
5/18
V
, V
=
4
00
V
,
DS
= 25 A, R
= 2.2
W
,
Fall Time
t
f
D
G
Inductive Load
Turn
−
On Switching Loss
Turn
−
Off Switching Loss
T
o
tal Switching Loss
E
ON
47
33
80
m
J
E
E
OFF
TOT
SOURCE
−
DRAIN DIODE CHARACTERISTICS
Continuous Source
−
Drain Diode Forward
I
−
−
56
184
−
A
A
V
−
SD
V
=
−
5
V
, T
=
2
5
°
C
J
GS
Current
Pulsed Source
−
Drain Diode Forward Current
I
SDM
−
−
V
GS
=
−
5
V
, T
=
2
5
°
C
J
Forward Diode Voltage
V
V
GS
=
−
5
V
, I
=
2
5 A, T
= 25
°
C
4.4
SD
SD
J
2
NTBG045N065SC1
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise stated)
J
Parameter
SOURCE
−
DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
−
−
−
−
−
−
20
100
3.8
10
−
−
−
−
−
−
ns
nC
m
J
A
RR
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge time
Q
RR
E
REC
V
GS
=
−
5/18
V
, I
=
2
5 A,
SD
dI /dt
= 1000 A/
m
s
S
I
RRM
Ta
11
ns
ns
Discharge time
Tb
8.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
NTBG045N065SC1
TYPICAL CHARACTERISTICS
120
100
80
60
40
20
0
4
V
= 18 V
GS
15 V
V
GS
= 12 V
3
12 V
2
15 V
18 V
10 V
1
0
9 V
8 V
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
1.4
1.3
1.2
1.1
1.0
0.9
0.8
140
120
100
80
I
= 25 A
I
V
= 25 A
D
D
= 18 V
GS
T =
25
°
C
J
T =
150
°
C
J
60
40
20
0
−
75
−
50
−
25
0
25 50 75
100 125 150 175
7
8
9
10 11 12 13 14 15 16 17 18
T , JUNCTION TEMPERATURE (
°
C)
J
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 3. On
−
Resistance Variation with
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Temperature
Voltage
120
100
120
100
80
60
40
20
0
T =
175
°
C
J
V =
−
5 V
GS
V
DS
= 10 V
T =
175
°
C
J
T =
25
°
C
J
T =
25
°
C
J
T =
−
55
°
C
J
10
T =
−
55
°
C
J
1
3
6
9
12
15
2
3
4
5
6
7
8
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
4
NTBG045N065SC1
TYPICAL CHARACTERISTICS
20
15
10
5
10000
I
D
= 25 A
V
DD
= 390 V
V
C
C
iss
V
= 650 V
1000
100
10
DD
= 520 V
oss
DD
C
rss
0
f = 1 MHz
= 0 V
V
GS
−
5
1
0.1
0
20
40
60
80
100
120
1
10
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
100
650
V
Q ,
GATE CHARGE (nC)
g
Figure 7. Gate
−
to
−
Source Voltage vs. Total
Figure 8. Capacitance vs. Drain
−
to
−
Source
Charge
Voltage
70
60
50
40
30
20
10
0
100
V
GS
= 18 V
T =
25
°
C
J
10
R
= 0.62
°
C/W
q
JC
1
25
50
75
100
125
150
175
0.001
0.01
0.1
1
t ,
TIME IN AVALANCHE (ms)
AV
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
200
20000
10000
Single Pulse
100
10
1
10
m
s
R
= 0.62
°
C/W
q
JC
T
C
= 25
°
C
100
m
s
1 ms
1000
100
10 ms
Single Pulse
T =
175
°
C
J
R
= 0.62
°
C/W
DC
q
JC
T
C
= 25
°
C
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
5
NTBG045N065SC1
TYPICAL CHARACTERISTICS
1
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
P
0.01
DM
Single Pulse
Notes:
= 0.62
°
C/W
R
t
q
JC
1
Duty Cycle, D = t
/t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 13. Junction
−
to
−
Case Transient Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Package
Shipping
NTBG045N065SC1
D2PAK
−
7L
800 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
6
NTBG045N065SC1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
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o
ll Free USA/Canada
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