onsemi-NTBGS4D1N15MC
| Part # | onsemi-NTBGS4D1N15MC |
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MOSFET
– Single N-Channel
150
V
,
4
.1 m
W
, 185 A
NTBGS4D1N15MC
Features
•
Low R
to Minimize Conduction Losses
•
Low Q
and Capacitance to Minimize Driver Losses
DS(on)
G
•
Lowers Switching Noise/EMI
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
4.1 m
W
@ 10 V
4.7 m
W
@ 8 V
Typical Applications
150 V
185 A
•
Power Tools, Battery Operated
V
a
cuums
•
U
A
V
/Drones, Material Handling
•
BMS/Storage, Home Automation
D (TAB)
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
150
20
Unit
V
V
DSS
G (Pin 1)
Gate
−
to
−
Source Voltage
V
GS
V
S (Pins 2,3,4,5,6,7)
N
−
CHANNEL MOSFET
Continuous Drain
Current R
I
185
A
D
q
JC
Steady
State
T
= 25
°
C
C
Power Dissipation
P
316
20
W
A
D
MARKING
DIAGRAM
R
q
JC
Continuous Drain
Current R
I
D
q
JA
Steady
State
T =
25
°
C
A
XXXXXXXXX
AYWWG
Power Dissipation
P
3.7
W
D
R
q
JA
2
D PAK7
CASE 418
A
Y
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
2564
A
A
p
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
°
C
J
stg
XXXX = Specific Device Code
+175
A
Y
= Assembly Location
=
Y
e
ar
Source Current (Body Diode)
I
S
263
332
A
WW =
Work Week
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
G
= Pb
−
Free Package
Energy (I
= 81.5 A
, L = 0.1 mH)
L
pk
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
2
1. Surface
−
mounted on FR4 board using a 1 in
, 1 oz. Cu pad.
2
NTBGS4D1N15MC
800 /
T
a
pe &
Reel
D PAK7
2. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
(Pb
−
Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
December, 2019
−
Rev. 0
NTBGS4D1N15MC/D
NTBGS4D1N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.5
Unit
R
°
C/W
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
150
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
20.28
mV/
°
C
(BR)DSS
I
D
= 250
m
A, referenced to 25
°
C
Zero Gate Voltage Drain Current
I
T =
25
°
C
1
m
A
m
A
nA
DSS
J
V
DS
= 0
V
,
GS
V
= 120 V
T =
125
°
C
J
10
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
=
20
V
, V
= 0 V
DS
GSS
GS
V
V
= V
, I
= 574
m
A
2.5
3.5
4.5
V
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature
Coefficient
V
/T
−
10.21
mV/
°
C
GS(TH)
J
I
D
= 250
m
A, referenced to 25
°
C
Drain
−
to
−
Source On Resistance
R
V
= 10
V
, I
=
1
04 A
3.3
3.5
4.1
4.7
m
W
DS(on)
GS
D
V
= 8
V
, I
=
5
2 A
D
GS
DS
Forward Transconductance
Gate
−
Resistance
g
FS
V
= 5
V
, I
=
9
0 A
10.9
1.2
S
D
R
T =
25
°
C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
7285
2025
10.6
88.9
22.8
37.5
13.0
272
pF
nC
ISS
Output Capacitance
C
V
GS
= 0
V
, f = 1
M
Hz, V
= 75 V
DS
OSS
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
Q
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Output Charge
Q
G(TH)
V
GS
= 10
V
, V
=
7
5
V
,
DS
D
I
= 104 A
Q
GS
GD
Q
Q
V
GS
= 0
V
, V
=
7
5 V
nC
ns
OSS
DS
Turn
−
On Delay Time
Rise Time
t
49
38
64
10
d(ON)
t
r
V
= 10
V
, V
=
7
5
V
,
DS
GS
D
I
= 104 A, R
= 6
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0
V
, I
=
1
04 A, T
= 25
°
C
0.88
0.79
89
1.2
V
SD
RR
GS
S
J
V
GS
= 0
V
, I
=
1
04 A, T
= 125
°
C
S J
Reverse Recovery Time
Charge Time
t
ns
t
47
a
V
GS
= 0
V
, I
=
1
04 A,
S
S
dI /dt
= 100 A/
m
s
Discharge Time
t
42
b
Reverse Recovery Charge
Q
164
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching
characteristics are independent of operating junction temperature
2
NTBGS4D1N15MC
TYPICAL CHARACTERISTICS
180
165
150
135
120
105
90
180
V
GS
= 10 V to 6.5 V
V
GS
= 5 V
165
150
135
120
105
90
6.0 V
75
75
T =
25
°
C
J
60
60
5.5 V
5.0 V
45
30
15
0
45
30
15
0
T =
175
°
C
J
T =
−
55
°
C
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
10
V
DS
V
, GATE
−
TO
−
SOURCE VOLTAGE (V)
GS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
80
70
60
50
40
30
20
T =
25
°
C
J
T =
25
°
C
D
J
I
= 104 A
V
= 8 V
GS
V
GS
= 10 V
2.5
2.0
10
0
5.5 6.0 6.5 7.0
7.5 8.0 8.5
9.0 9.5
10
0
25 50
75 100 125
150 175 200
225 250
I ,
DRAIN CURRENT (A)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
2.6
1M
100K
10K
V
GS
= 0 V
V
= 10 V
= 104 A
GS
2.4
2.2
2.0
1.8
I
D
T =
175
°
C
J
T =
150
°
C
J
1.6
1.4
1.2
1.0
T =
125
°
C
J
1K
0.8
0.6
−
50
−
25
100
0
25
50
75
100 125 150 175
0
15 30 45
60
75 90 105
120 135 150
T , JUNCTION TEMPERATURE (
°
C)
J
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTBGS4D1N15MC
TYPICAL CHARACTERISTICS
10
10K
1K
C
Q
ISS
9
G(TOT)
8
C
OSS
7
6
Q
Q
GD
GS
5
4
3
2
1
0
100
C
RSS
10
1
V
= 75 V
= 104 A
DS
V
= 0 V
GS
I
D
T =
25
°
C
J
T =
25
°
C
J
f = 1 MHz
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source Voltage vs. Total
Charge
1000
100
10
1000
100
V =
0 V
GS
V
V
= 10 V
= 75 V
= 104 A
GS
t
d(off)
DS
I
D
t
r
t
d(on)
t
f
10
1
1
T =
175
°
C
J
T =
150
°
C
T =
−
55
°
C
J
T =
25
°
C
J
J
0.1
0
10
20
30
40
50
60
0.2 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
R ,
GATE RESISTANCE (
W
)
G
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
10
m
s
100
T
= 25
°
C
J(initial)
100
m
s
T
V
= 25
°
C
≤
10 V
C
10
1
GS
T
= 125
°
C
J(initial)
Single Pulse
1 ms
1
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
100 ms & 1 sec
100
0.1
1E
−
06 1E
−
05 1E
−
04 1E
−
03
1E
−
02 1E
−
01 1E+00
1
10
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
4
NTBGS4D1N15MC
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
20%
10%
5%
2%
1%
0.01
0.001
Single Pulse
0.000001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 13. Thermal Response
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO
−
263 7 LD)
CASE 418AY
ISSUE C
DATE 15 JUL 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13798G
D2PAK7 (TO
−
263 7 LD)
PAGE 1 OF 1
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