onsemi-NTBLS1D5N08MC
| Part # | onsemi-NTBLS1D5N08MC |
Download  | onsemi-NTBLS1D5N08MC |
N-Channel, TOLL
NTBLS1D5N08MC
80
V
,
1
.53 m
W
, 298 A
Features
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low Q
and Capacitance to Minimize Driver Losses
G
•
Lowers Switching Noise/EMI
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1.53 m
W
@ 10 V
3.7 m
W
@ 6 V
Compliant
80 V
298 A
Applications
•
Power Tools, Battery Operated
V
a
cuums
•
U
A
V
/Drones, Material Handling
•
BMS/Storage, Home Automation
D
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
G
V
DSS
Gate−to−Source Voltage
Continuous Drain
V
20
V
GS
T
T
= 25
°
C
= 25
°
C
I
298
A
C
D
S
Current R
q
JC
Steady
State
Power Dissipation
P
250
32
W
A
C
D
R
q
JC
Continuous Drain
Current R
T =
25
°
C
A
I
D
q
JA
Steady
State
Power Dissipation
T =
25
°
C
A
P
D
2.9
W
MO−299A
TOLL
R
q
JA
CASE 100CU
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
4487
A
A
p
Operating Junction and Storage
T
e
mperature
Range
T , T
−
5
5 to
+150
°
C
J
stg
MARKING DIAGRAM
Source Current (Body Diode)
I
S
192
A
Single Pulse Drain−to−Source Avalanche
E
AS
1441
mJ
Energy (I
= 31 A, L = 3 mH)
L(pk)
AYWWZZ
NTBLS
1D5N08MC
Lead
T
e
mperature Soldering Reflow for Solder-
ing Purposes (1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NTBLS1D5N08MC = Specific Device Code
THERMAL RESISTANCE MAXIMUM RATINGS
A
Y
= Assembly Location
=
Y
e
ar
Parameter
Symbol
Value
0.5
Unit
WW = Work Week
ZZ =
Lot Traceability
R
°
C/W
q
JC
JA
R
43
q
2
1. Surface−mounted
on FR4 board using a 1 in
pad size, 1 oz. Cu pad.
2. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
©
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
September, 2019 − Rev. 0
NTBLS1D5N08MC/D
NTBLS1D5N08MC
Table 1. ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Conditions
Min
Typ
Max
Units
Drain−to−Source Breakdown Voltage
V
I
= 250
m
A, V
= 0 V
80
−
−
−
−
V
(BR)DSS
D
GS
Drain−to−Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
I =
250
m
A, ref to 25
°
C
D
78
mV/
°
C
(BR)DSS
J
V
V
= 80 V,
T =
25
°
C
−
−
−
−
−
−
1
Zero Gate Voltage Drain Current
I
m
A
m
A
nA
DS
J
DSS
= 0 V
GS
T =
125
°
C
J
100
100
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold
T
e
mperature Coefficient
Drain−to−Source On Resistance
Drain−to−Source On Resistance
Forward Transconductance
Gate−Resistance
I
V
= 0
V
, V
=
GS
20 V
GSS
DS
GS
V
GS(th)
V
I
= V
, I
= 710
m
A
2.0
−
3.0
−8.3
1.30
2.0
4.0
−
V
mV/
°
C
m
W
m
W
S
DS
D
V
/T
= 710
m
A, ref to 25
°
C
GS(th)
J
D
R
R
V
GS
= 10
V
, I
=
8
0 A
−
1.53
3.7
−
DS(on)
DS(on)
D
V
= 6
V
, I
=
6
3 A
−
GS
DS
D
g
V
= 5
V
, I
=
8
0 A
−
220
0.7
FS
D
R
T =
25
°
C
−
−
W
G
A
CHARGES & CAPACTIANCES
Input Capacitance
C
V
GS
= 0
V
, V
=
4
0
V
, f = 1
M
Hz
−
−
−
−
−
−
−
−
−
−
8170
3025
82
−
−
−
−
−
−
−
−
−
−
pF
pF
pF
nC
iss
DS
Output Capacitance
C
oss
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
rss
Q
V
GS
= 10
V
, V
=
4
0
V
,
111
22
G(tot)
DS
I
= 80 A
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(th)
Q
35
gs
gd
Q
23
Output Charge
Q
166
94
oss
Sync Charge
Q
sync
Plateau Voltage
V
5
V
P
GS
Turn−On Delay Time
Rise Time
t
V
= 10
V
, V
=
4
0
V
,
−
−
−
−
38
34
74
37
−
−
−
−
ns
ns
ns
ns
d(on)
GS
DS
I
D
= 80 A, R
= 6
W
G
t
r
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
I
I
= 80 A, V
= 0 V
T =
25
°
C
−
−
−
−
−
−
0.8
0.7
19
1.3
−
V
SD
S
GS
J
= 80 A, V
= 0 V
T =
125
°
C
J
V
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
t
−
nS
nC
nS
nC
I =
40 A, di/dt = 300 A/
m
s
F
rr
Q
42
−
rr
t
17
−
I =
40 A, di/dt = 1000 A/
m
s
F
rr
Q
121
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching
characteristics are independent of operating junction temperatures
2
NTBLS1D5N08MC
TYPICAL CHARACTERISTICS
300
250
200
150
8
10 V and 8 V
6.0 V
6.0 V
V
GS
= 5.5 V
6
4
V
GS
= 5.5 V
100
50
0
2
0
8.0 V
10 V
0
1
2
3
4
5
0
50
100
150
200
250
300
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. R
DS(on)
Normalized vs. I
D
2.0
1.8
1.6
1.4
1.2
1.0
20
15
10
I
D
= 80 A
I
V
= 80 A
D
= 10 V
GS
T =
25
°
C
J
5
0
T =
125
°
C
J
0.8
0.6
−75 −50 −25
0
25
50
75 100
125 150
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (
°
C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. R
DS(on)
vs. Junction Temperature
Figure 4. On−Resistance vs.
Gate−to−Source
Voltage
300
250
200
150
100
300
100
V
= 0 V
V
DS
= 5 V
GS
10
1
T =
25
°
C
J
0.1
T =
150
°
C
J
0.01
50
0
T =
150
°
C
J
T =
−55
°
C
T =
25
°
C
J
T =
−55
°
C
J
J
0.001
3
4
5
6
7
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Drain Current vs. Gate−to−Source
Voltage
Figure 6. Reverse Drain Current vs. Body
Diode Forward Voltage
3
NTBLS1D5N08MC
TYPICAL CHARACTERISTICS
100K
10
8
V
DD
= 30 V
V
DD
= 40 V
C
iss
10K
V
DD
= 50 V
6
C
oss
1K
4
C
rss
100
10
2
0
f = 1 MHz
= 0 V
V
GS
0.1
1
10
80
0
20
40
60
CHARGE (nC)
80
100
120
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Gate Charge
Figure 8. Capacitance Variation
300
100
300
250
200
150
V
= 10 V
GS
25
°
C Rating
V
GS
= 6 V
100
°
C Rating
125
°
C Rating
10
1
100
50
0
R
= 0.5
°
C/W
q
JC
0.001 0.01
0.1
1
10
100
1000
25
50
75
100
125
150
t ,
TIME IN AVALANCHE (mS)
AV
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. UIL
Figure 10. Drain Current vs. Case Temperature
1M
100K
10K
1K
5000
1000
10
m
s
100
10
This Area is
Limited by R
100
m
s
DS(on)
1 ms
1
T
= 25
°
C
100
10
10 ms
C
Single Pulse
= 0.5
°
C/W
100 ms/
DC
R
q
JC
0.1
0.1
1
10
100
300
0.00001 0.0001 0.001
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Peak Power
4
NTBLS1D5N08MC
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Notes:
(t) = r(t) x R
P
DM
Z
q
q
JC
JC
0.01
0.01
R
= 0.5
°
C/W
q
JC
t
Peak T
= P
x Z
(t) + T
JC C
1
q
J
DM
Single Pulse
Duty Cycle, D = t
/t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTBLS1D5N08MC
NTBLS
1D5N08MC
M0−299A
(Pb−Free)
2000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H
−
PSOF8L 11.68×9.80
CASE 100CU
ISSUE B
DATE 20 MAY 2022
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
= Assembly Location
=
Y
e
ar
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
WW =
Work Week
ZZ
XXXX = Specific Device Code
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13813G
H
−
PSOF8L 11.68×9.80
PAGE 1 OF 1
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
