onsemi-NTBS9D0N10MC
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MOSFET
– Single N-Channel
100
V
,
9
.0 m
W
, 60 A
NTBS9D0N10MC
Features
•
Low R
to Minimize Conduction Losses
•
Low Q
and Capacitance to Minimize Driver Losses
DS(on)
G
•
Lowers Switching Noise/EMI
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
100 V
9.0 m
W
@ 10 V
60 A
Typical Applications
•
Power Tools, Battery Operated
V
a
cuums
•
U
A
V
/Drones, Material Handling
•
BMS/Storage, Home Automation
D
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
G
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
100
20
Unit
V
V
DSS
S
Gate
−
to
−
Source Voltage
V
GS
V
N
−
CHANNEL MOSFET
Continuous Drain
I
60
A
D
Current R
q
JC
Steady
State
T
= 25
°
C
C
MARKING
DIAGRAM
Power Dissipation
P
68
14
W
A
D
R
q
JC
Continuous Drain
Current R
I
D
q
JA
AYWWZZ
NTBS9D0
N10MC
Steady
State
T =
25
°
C
A
Power Dissipation
P
3.8
W
D
2
D PAK3
R
q
JA
TO
−
263
CASE 418AJ
Pulsed Drain Current
T
C
= 25
°
C, t
= 100
m
s
I
DM
239
A
p
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+175
°
C
J
stg
A
Y
= Assembly Location
=
Y
e
ar
WW
ZZ
= Work Week
= Lot Traceability
Source Current (Body Diode)
I
57
A
S
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
181.5
mJ
NTBS9D0N10MC = Specific Device Code
Energy (I
= 11 A
, L = 3 mH)
L
pk
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
NTBS9D0N10MC
Package
Shipping
2
800 /
T
a
pe &
Reel
D PAK
2
1. Surface
−
mounted on FR4 board using a 1 in
, 2 oz. Cu pad.
(Pb
−
Free)
2. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
May, 2020
−
Rev. 2
NTBS9D0N10MC/D
NTBS9D0N10MC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
2.2
Unit
R
°
C/W
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
100
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
56
mV/
°
C
(BR)DSS
I
D
= 250
m
A, referenced to 25
°
C
Zero Gate Voltage Drain Current
I
T =
25
°
C
1
m
A
m
A
nA
DSS
J
V
= 0
V
,
GS
DS
V
= 80 V
T =
150
°
C
J
100
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
=
20
V
, V
= 0 V
DS
GSS
GS
V
V
= V
, I
= 131
m
A
2.0
3.0
4.0
V
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature
Coefficient
V
/T
−
9.6
mV/
°
C
GS(TH)
J
I
D
= 131
m
A, referenced to 25
°
C
Drain
−
to
−
Source On Resistance
R
V
= 10
V
, I
=
2
3 A
7.8
12
9.0
m
W
DS(on)
GS
D
V
= 6
V
, I
=
1
2 A
22.2
GS
DS
D
Forward Transconductance
Gate
−
Resistance
g
FS
V
= 10
V
, I
=
2
3 A
59
S
D
R
T =
25
°
C
A
0.6
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
1695
935
13
23
5
pF
nC
ISS
Output Capacitance
C
V
GS
= 0
V
, f = 1
M
Hz, V
= 50 V
DS
OSS
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
Q
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Output Charge
Q
G(TH)
V
GS
= 10
V
, V
=
5
0
V
,
DS
I
= 23 A
D
Q
8
GS
GD
Q
5
Q
V
DS
= 50
V
, V
= 0 V
59
OSS
GS
GS
Turn
−
On Delay Time
Rise Time
t
15
6
ns
d(ON)
t
r
V
= 10
V
, V
=
5
0
V
,
DS
GS
D
I
= 23 A, R
= 6
W
G
Turn
−
Off Delay Time
Fall Time
t
21
7
d(OFF)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0
V
, I
=
2
3 A, T
= 25
°
C
0.87
0.72
29
1.2
V
SD
GS
S
J
V
GS
= 0
V
, I
=
2
3 A, T
= 150
°
C
S J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
t
ns
nC
ns
RR
V
= 0
V
,
d
I
/dt = 300 A/
m
s,
S
GS
I
= 12 A
S
Q
61
RR
RR
t
23
V
= 0
V
,
d
I
/dt = 1000 A/
m
s,
S
GS
I
= 12 A
S
Q
147
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching
characteristics are independent of operating junction temperature
2
NTBS9D0N10MC
TYPICAL CHARACTERISTICS
160
120
80
5
8.0 V
V
GS
= 6.0 V
10 V
7 V
5.5 V
7.0 V
4
3
2
6.0 V
V
GS
= 5.5 V
8 V
40
0
1
0
10 V
Pulse Duration = 250
m
s
Duty Cycle = 0.5% Max
0
1
2
3
4
5
6
7
8
9
10
0
4
0
40
80
120
160
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
DS
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
60
50
40
30
20
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
D
= 23 A
I
= 23 A
= 10 V
D
V
GS
T =
150
°
C
J
10
0
0.8
0.6
T =
25
°
C
J
−
75
−
50
−
25
0
25 50 75 100
125 150 175
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (
°
C)
J
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 3. Normalized On
−
Resistance vs.
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Junction Temperature
Voltage
160
120
80
200
100
V
= 10 V
V
GS
= 0 V
DS
10
1
T =
25
°
C
J
0.1
T =
175
°
C
J
40
0
0.01
T =
175
°
C
J
T =
−
55
°
C
T =
25
°
C
J
T =
−
55
°
C
J
J
0.001
2
3
4
5
6
7
8
9
10
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source
−
to
−
Drain Diode Forward
Voltage vs. Source Current
3
NTBS9D0N10MC
TYPICAL CHARACTERISTICS
10
8
10K
V
DD
= 25 V
I
D
= 23 A
C
ISS
V
DD
= 50 V
V
DD
= 75 V
1K
C
OSS
6
100
4
C
RSS
10
1
2
0
f = 1 MHz
= 0 V
V
GS
0
5
10
15
20
25
0.1
1
10
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
100
Q ,
GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
−
to
−
Source
Voltage
80
60
40
10K
1K
V
= 10 V
= 6 V
GS
V
GS
100
10
20
0
R
= 2.2
°
C/W
q
JC
25
50
75
100
125
150
175
0.00001 0.0001
0.001
0.01
0.1
1
T ,
CASE TEMPERATURE (
°
C)
C
t, PULSE WIDTH (s)
Figure 9. Drain Current vs. Case Temperature
Figure 10. Peak Power
100
500
100
T
= 25
°
C
C
Single Pulse
= 2.2
°
C/W
R
q
JC
10
m
s
T
= 25
°
C
J(initial)
100
m
s
10
10
T
= 100
°
C
J(initial)
T
= 150
°
C
J(initial)
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms/DC
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100 200
t ,
TIME IN AVALANCHE (mS)
AV
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 11. Unclamped Inductive Switching
Capability
Figure 12. Forward Bias Safe Operating Area
4
NTBS9D0N10MC
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
Notes:
= 2.2
°
C/W
P
DM
0.1
0.02
R
q
JC
Peak T
= P
Duty Cycle, D = t
/t
x Z
(t) + T
JC C
q
J
DM
0.01
t
1
1
2
t
2
Single Pulse
0.00001
0.01
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Impedance
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D
2
PAK
−
3 (TO
−
263, 3
−
LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
=
Y
e
ar
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb
−
Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D
2
PAK
−
3 (TO
−
263, 3
−
LEAD)
PAGE 1 OF 1
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©
Semiconductor Components Industries, LLC, 2018
onsemi
,
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onsemi
” or its affiliates
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onsemi
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