onsemi-NTD5C434NT4G
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NTD5C434N
N-Channel
40
V
,
2
.1 m
W
, 160 A
Features
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low Q
and Capacitance to Minimize Driver Losses
G
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
V
R
I
D
(BR)DSS
DS(on)
Compliant
40 V
2.1 m
W
@ 10 V
160 A
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
40
Unit
V
D
V
DSS
Gate
−
to
−
Source Voltage
V
“
20
160
120
120
59
V
GS
Continuous Drain Cur-
T
= 25
°
C
= 100
°
C
= 25
°
C
I
A
C
D
rent R
G
q
JC
T
C
Steady
State
Power Dissipation R
T
C
P
W
A
q
D
JC
JA
S
T
C
= 100
°
C
N
−
CHANNEL MOSFET
Continuous Drain
T =
25
°
C
A
I
33
D
Current R
q
4
JA
T =
100
°
C
A
23
Steady
State
Power Dissipation R
T =
25
°
C
A
P
4.7
W
q
D
2
1
3
T =
100
°
C
A
2.4
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
900
A
DPAK
A
p
CASE 369C
STYLE 2
Operating Junction and Storage
T
e
mperature
T , T
−
55 to
175
°
C
J
stg
Source Current (Body Diode)
I
130
420
A
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
Energy (I
= 25 A)
L(pk)
4
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Drain
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
2
Parameter
Symbol
Value
1.3
Unit
Drain
1
3
Gate Source
R
°
C/W
q
JC
A
Y
WW
= Assembly Location
=
Y
e
ar
= Work Week
R
32
q
JA
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
5C434N= Device Code
2
2. Surface
−
mounted on FR4 board using a 650 mm
, 2 oz. Cu pad.
G
= Pb
−
Free Package
3. Maximum
current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
May, 2019
−
Rev. 0
NTD5C434N/D
NTD5C434N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
40
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
18
mV/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
I
m
A
T =
25
°
C
10
DSS
J
V
= 0
V
,
GS
DS
V
= 40 V
T =
125
°
C
J
250
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
2
0 V
nA
GSS
DS
GS
V
V
= V
, I
= 250
m
A
2.0
4.0
2.1
V
mV/
°
C
m
W
S
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
Forward Transconductance
V
/T
J
7.9
1.7
155
GS(TH)
R
V
= 10
V
, I
=
5
0 A
DS(on)
GS D
g
V
= 3
V
, I
=
5
0 A
FS
DS D
CHARGES, CAPACITANCES AND GATE RESISTANCES
pF
nC
Input Capacitance
C
5400
3000
71
iss
V
= 0
V
, f =
1
.0 MHz,
DS
GS
Output Capacitance
C
oss
V
= 25 V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
rss
Q
80.6
15.2
25.2
15.4
4.8
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
G(TH)
V
GS
= 10
V
, V
=
2
0
V
,
DS
Q
GS
GD
GP
I
D
= 50 A
Q
V
V
Turn
−
On Delay Time
ns
t
15
78
43
14
d(on)
Rise Time
t
r
V
= 10
V
, V
=
2
0
V
,
GS
D
DS
I
= 50 A, R
= 2.5
W
G
Turn
−
Off Delay Time
t
d(off)
Fall Time
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
T =
25
°
C
0.8
0.7
73
1.2
SD
J
V
S
= 0
V
,
GS
I
= 50 A
T =
125
°
C
J
ns
Reverse Recovery Time
Charge Time
t
RR
ta
36
V
GS
= 0
V
,
d
Is/dt = 100 A/
m
s,
I
S
= 50 A
Discharge Time
tb
37
Reverse Recovery Charge
Q
120
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
5. Switching
characteristics are independent of operating junction temperatures.
2
NTD5C434N
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
400
V
= 8 V
6.0 V
GS
V
DS
= 3 V
to 10 V
350
300
250
200
150
100
5.4 V
5.2 V
5.0 V
4.8 V
T =
25
°
C
J
100
50
0
.
4.6 V
4.4 V
50
0
T =
125
°
C
J
T =
−
55
°
C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
7
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
12
10
8
2.0
1.8
1.6
1.4
T =
25
°
C
J
T =
25
°
C
D
J
I
= 50 A
V
GS
= 10 V
6
4
1.2
1.0
2
0
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
100000
10000
1000
100
2.0
1.8
1.6
1.4
1.2
1.0
T =
150
°
C
J
V
= 10 V
= 50 A
GS
I
D
T =
125
°
C
J
T =
85
°
C
J
T =
25
°
C
J
10
1
0.8
0.6
0.1
0.01
5
10
15
20
25
30
35
40
−
50
−
25
0
25
50
75 100
125 150
175
T , JUNCTION TEMPERATURE (
°
C)
J
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTD5C434N
TYPICAL CHARACTERISTICS
10
10000
1000
C
ISS
9
8
7
6
5
4
3
2
C
OSS
Q
Q
GD
GS
100
10
C
V
DS
= 20 V
RSS
V
= 0 V
GS
T =
25
°
C
J
T =
25
°
C
J
1
0
I
D
= 50 A
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source vs. Total Charge
1000
100
100
V
V
= 10 V
= 20 V
= 50 A
V
= 0 V
GS
GS
DS
I
D
t
t
r
d(off)
d(on)
10
t
t
10
1
f
T =
125
°
C
T =
25
°
C T
=
−
55
°
C
J
J
J
1
1
10
R ,
GATE RESISTANCE (
W
)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
T
V
= 25
°
C
C
≤
10 V
GS
Single Pulse
T (initial)
= 25
°
C
J
100
10
T (initial)
= 100
°
C
J
10
10
m
s
0.5 ms
1 ms
1
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
4
NTD5C434N
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
ORDERING INFORMATION
Order Number
†
Package
Shipping
NTD5C434NT4G
DPAK
(Pb
−
Free)
2500 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
4
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE G
2
1
DATE 31 MAY 2023
3
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
XXXXXX =
Device Code
A
= Assembly Location
L
= Wafer Lot
STYLE 1:
STYLE 2:
PIN 1.
GATE
2. DRAIN
STYLE 3:
STYLE 4:
STYLE 5:
Y
WW
G
=
Y
e
ar
= Work Week
= Pb
−
Free Package
PIN 1.
BASE
PIN 1.
ANODE
2. CATHODE
3. ANODE
PIN 1.
CATHODE
2. ANODE
3. GATE
PIN 1.
GATE
2. ANODE
3. CATHODE
4. ANODE
2. COLLECTOR
3. EMITTER
3. SOURCE
4. DRAIN
4. COLLECTOR
4. CATHODE
4. ANODE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 6:
PIN 1.
MT1
2. MT2
STYLE 7:
PIN 1.
GATE
STYLE 8:
PIN 1.
N/C
STYLE 9:
PIN 1.
ANODE
2. CATHODE
STYLE 10:
PIN 1.
CATHODE
2. ANODE
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
4. COLLECTOR
3. ANODE
4. CATHODE
3. RESISTOR
ADJUST
4. CATHODE
3. CATHODE
4. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
PAGE 1 OF 1
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©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
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−
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.
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−
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