onsemi-NTD600N80S3Z
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N-Channel, SUPERFET
)
III
800
V
,
6
00 m
W
, 8 A
NTD600N80S3Z
Description
800 V SUPERFET III MOSFET is ON Semiconductor
’
s high
performance MOSFET family offering 800 V breakdown voltage.
New 800 V SUPERFET III MOSFET which is optimized for
primary switch of flyback converter, enables lower switching losses
and case temperature without sacrificing EMI performance thanks to
its optimized design. In addition, internal Zener Diode significantly
improves ESD capability.
This new family of 800 V SUPERFET III MOSFET enables to
make more efficient, compact, cooler and more robust applications
because of its remarkable performance in switching power applications
such as Laptop adapter, Audio, Lighting,
A
T
X power and industrial
power supplies.
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
800 V
600 m
W
8 A
D
G
Features
•
Typ. R
= 550 m
W
DS(on)
S
•
Ultra Low Gate Charge (Typ. Q
= 15.5 nC)
g
POWER MOSFET
•
Low Stored Energy in Output Capacitance (Eoss = 1.74
m
J @ 400 V)
•
100% Avalanche Tested
•
ESD Improved Capability with Zener Diode
•
RoHS Compliant
D
G
S
Applications
D
−
PAK
TO
−
252
CASE 369AS
•
Adapters / Chargers
•
LED Lighting
•
AUX Power
•
Audio
MARKING DIAGRAM
•
Industrial Power
T600N
80S3Z
AYWWZZ
T600N80S3Z
A
Y
= Specific Device Code
= Assembly Location
=
Y
e
ar
WW
ZZ
= Work Week
= Lot Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
December, 2020
−
Rev. 0
NTD600N80S3Z/D
NTD600N80S3Z
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, unless otherwise noted)
J
Symbol
V
Parameter
Value
Unit
V
Drain
−
to
−
Source Voltage
800
DSS
V
GS
Gate
−
to
−
Source Voltage
DC
20
V
AC (f > 1 Hz)
30
I
D
Drain Current
Continuous (T
= 25
°
C)
8*
5*
A
C
Continuous (T
= 100
°
C)
C
I
Drain Current
21*
A
mJ
A
DM
E
MOSFET dv/dt
24
AS
AS
I
1.2
E
0.6
mJ
V/ns
AR
dv/dt
100
Power Dissipation
10
P
(T =
25
°
C)
60
W
W/
°
C
°
C
D
C
Derate Above 25
°
C
0.48
−
55 to +150
260
T , T
Operating and Storage
T
e
mperature Range
J
STG
T
Lead
T
e
mperature Soldering Reflow for Soldering Purposes
(1/8
″
from Case for 10 seconds)
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive
rating: pulse
−
width limited by maximum junction temperature.
2. I
= 1.2 A, R
= 25
W
, starting T
= 25
°
C.
AS
G
J
3. I
≤
2 A, di/dt
≤
200 A/
m
s, V
≤
400
V
,
s
tarting T
= 25
°
C.
SD
DD
J
THERMAL RESISTANCE RATINGS
Symbol
Parameter
Value
2.08
Unit
R
Junction
−
to
−
Case
−
Steady State
Junction
−
to
−
Ambient
−
Steady State
_
C/W
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Reel Size
Tape Width
16 mm
Quantity
2500 Units
NTD600N80S3Z
NTD600N80S3Z
TO
−
252
330 mm
2
NTD600N80S3Z
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain
−
to
−
Source Breakdown Voltage
800
900
V
V
V
V
I
= 0
V
, I
= 1 mA, T
= 25
_
C
DSS
GS
D
J
= 0
V
, I
= 1 mA, T
= 150
_
C
GS
D
J
D
BV
/
D
T
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
= 1 mA, Referenced to 25
_
C
1.1
0.8
V/
_
C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 800
V
, V
= 0 V
1
1
m
A
DSS
GS
= 640
V
, T
=
1
25
_
C
C
I
Gate
−
to
−
Body Leakage Current
= 20
V
, V
= 0 V
DS
m
A
GSS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V
, I
= 0.18 mA
2.2
3.8
V
m
W
S
GS(th)
DS(on)
DS
D
R
Static Drain
−
to
−
Source On Resistance
Forward Transconductance
= 10
V
, I
= 4 A
550
9.4
600
D
g
FS
= 20
V
, I
= 4 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400
V
, V
= 0 V, f =
2
50 kHz
725
12
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
T
o
tal Gate Charge at 10 V
Gate
−
to
−
Source Gate Charge
Gate
−
to
−
Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DD
= 0 V to 400 V, V
= 0 V
139
21
oss(eff.)
GS
C
= 0 V to 400 V, V
= 0 V
GS
oss(er.)
Q
= 400
V
, I
= 4 A, V
= 10 V
15.5
3.1
5.1
3.5
g(tot)
D
GS
Q
gs
Q
gd
ESR
f = 1 MHz
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 400
V
, I
= 4
A
, V
= 10
V
,
12.3
5.9
ns
ns
ns
ns
d(on)
DD
g
D
GS
R =
4.7
W
t
r
t
39.5
8.2
d(off)
t
f
SOURCE
−
TO
−
DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source
−
to
−
Drain Diode Forward Current
Maximum Pulsed Source
−
to
−
Drain Diode Forward Current
8
A
A
S
I
21
1.2
SM
V
SD
Source
−
to
−
Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0
V
, I
= 4
A
V
GS
SD
t
= 0
V
, I
= 2
A
,
137
ns
m
C
rr
GS
SD
dI /dt
= 100 A/
m
s
F
Q
Reverse Recovery Charge
0.91
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially
independent of operating temperature typical characteristics.
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
3
NTD600N80S3Z
TYPICAL CHARACTERISTICS
25
20
15
10
5
100
T =
25
°
C
J
V
DS
= 20 V
V
GS
= 20 V
7.0 V
10 V
5.5 V
4.0 V
10
T =
25
°
C
J
T =
150
°
C
J
T =
−
55
°
C
J
1
0
2
3
4
5
6
1.2
20
0
5
10
15
20
25
30
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
, GATE
−
TO
−
SOURCE VOLTAGE (V)
GS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
1.50
1.25
1.00
0.75
0.50
0.25
0.00
10
1
V
= 0 V
GS
V
GS
= 10 V
V
= 20 V
GS
0.1
0.01
T =
150
°
C
J
T =
25
°
C
T =
−
55
°
C
J
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
0
5
10
15
I ,
DRAIN CURRENT (A)
V
, BODY DIODE FORWARD VOLTAGE (V)
D
SD
Figure 3. On Resistance vs. Drain Current
Figure 4. Diode Forward Voltage vs. Current
100,000
10,000
1000
100
10
8
I
D
= 4.0 A
V
= 130 V
DD
V
= 400 V
DD
C
iss
6
C
oss
4
f = 250 kHz
10
V
= 0 V
= C
GS
C
C
C
C
rss
rss
oss
iss
gd
2
1
= C
+ C
= C
+ C
(C =
shorted)
ds
gd
gs
gd
ds
0.1
0.01
0
0.1
1
10
100
1000
0
5
10
15
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
NTD600N80S3Z
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
3.0
I
D
= 10 mA
I
V
= 4.0 A
= 10 V
D
2.5
2.0
1.5
1.0
0.5
0.0
GS
−
75
−
50
−
25
0
25
50 75 100
125 150
175
175
50 75 100
125 150
−
75
−
50
−
25
0
25
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 7. Normalized BV
DSS
vs. Temperature
Figure 8. On
−
Resistance Variation vs.
Temperature
5
4
3
2
1
0
100
10
10
m
s
100
m
s
1 ms
1
10 ms
0.1
DC
Single Pulse
T
C
= 25
°
C
0.01
1
1
10
100
1000
0
100
200
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
300
400
500
600
700
8
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
Figure 9. Safe Operating Area
Figure 10. E
oss
vs. Drain
−
to
−
Source Voltage
50% Duty Cycle
20%
10%
0.1
0.01
5%
2%
P
DM
t
1
1%
t
2
Z
R
(t) = r(t) x R
q
JC
Single Pulse
q
JC
= 2.08
°
C/W
q
JC
Peak T
= P
x Z
(t) + T
q
JC C
J
DM
Duty Cycle, D = t
/ t
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t ,
RECTANGULAR PULSE DURATION (sec)
1
Figure 11. Transient Thermal Impedance
5
NTD600N80S3Z
V
GS
R
Q
g
L
V
DD
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
L
2
1
2
E
AS
+
@
LI
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
6
NTD600N80S3Z
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
−
dv/dt controlled by R
G
−
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO
−
252 3 LD)
CASE 369AS
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13810G
DPAK3 (TO
−
252 3 LD)
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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©
Semiconductor Components Industries, LLC, 2019
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onsemi
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