onsemi-NTF3055-100T1G
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NTF3055-100,
NVF3055-100
Power MOSFET
3.0 Amps, 60 Volts
N−Channel SOT−223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
3.0 A, 60 V
R
DS(on)
= 110 m
W
Features
•
NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
N−Channel
D
•
These Devices are Pb−Free and are RoHS Compliant
Applications
G
•
Power Supplies
•
Converters
•
Power Motor Controls
•
Bridge Circuits
S
MARKING
DIAGRAM
& PIN
4
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
C
ASSIGNMENT
1
Rating
Drain−to−Source Voltage
Symbol Value
Unit
Vdc
Vdc
Drain
4
2
3
V
DSS
60
60
SOT−223
CASE 318E
STYLE 3
Drain−to−Gate Voltage (R
= 10 M
W
)
V
DGR
AWW
3055
G
G
GS
Gate−to−Source Voltage
− Continuous
V
GS
20
30
Vdc
Vpk
− Non−repetitive (t
≤
10 ms)
p
1
2
3
Drain Current
Gate Drain Source
− Continuous @ T
= 25
°
C
I
3.0
1.4
9.0
Adc
Apk
A
D
A
= Assembly Location
= Work Week
= Specific Device Code
= Pb−Free Package
− Continuous @ T
= 100
°
C
I
D
A
WW
3055
G
− Single Pulse (t
≤
10
m
s)
I
p
DM
P
2.1
1.3
W
W
A
D
A
(Note: Microdot may be in either location)
0.014 W/
°
C
Derate above 25
°
C
ORDERING INFORMATION
Operating and Storage
T
e
mperature Range
T , T
−
5
5
to 175
°
C
J
stg
†
Device
NTF3055−100T1G
Package
Shipping
Single Pulse Drain−to−Source Avalanche
E
AS
74
mJ
1000 /
T
a
pe &
Reel
Energy − Starting T
= 25
°
C
SOT−223
(Pb−Free)
J
(V =
25 Vdc, V
= 10 Vdc,
DD
GS
I (pk)
= 7.0 Apk, L = 3.0 mH, V
= 60 Vdc)
L
DS
NTF3055−100T3G SOT−223
(Pb−Free)
4000 /
T
a
pe &
Reel
Thermal Resistance
°
C/W
°
C
R
R
72.3
114
q
JA
JA
q
NVF3055−100T1G SOT−223
(Pb−Free)
1000 /
T
a
pe &
Reel
Maximum Lead
T
e
mperature for Soldering
T
260
L
Purposes, 1/8
″
from case for 10 seconds
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. When
surface mounted to an FR4 board using 1
″
pad size, 1 oz.
(Cu. Area 1.127 sq in).
2. When
surface mounted to an FR4 board using minimum recommended pad
size, 2−2.4 oz. (Cu. Area 0.272 sq in).
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
July, 2016 − Rev. 5
NTF3055−100/D
NTF3055−100, NVF3055−100
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
Vdc
mV/
°
C
m
Adc
(BR)DSS
60
−
68
66
−
−
(V =
0 Vdc, I
= 250
m
Adc)
GS
D
T
e
mperature Coefficient (Positive)
Zero Gate Voltage Drain Current
I
DSS
(V =
60 Vdc, V
= 0 Vdc)
−
−
−
−
1.0
10
DS
GS
(V =
60 Vdc, V
= 0 Vdc, T
= 150
°
C)
DS
GS
J
Gate−Body Leakage Current
(V 20
Vdc, V
= 0 Vdc)
I
−
−
100
nAdc
GSS
=
GS
DS
V
R
Vdc
mV/
°
C
m
W
GS(th)
2.0
−
3.0
6.6
4.0
−
(V =
V ,
I =
250
m
Adc)
DS
GS D
Threshold
T
e
mperature Coefficient (Negative)
DS(on)
−
−
−
88
110
(V =
10 Vdc, I
= 1.5 Adc)
GS
D
V
DS(on)
Vdc
(V =
10 Vdc, I
= 3.0 Adc)
0.27
0.24
0.40
−
GS
D
(V =
10 Vdc, I
= 1.5 Adc, T
= 150
°
C)
GS
D
J
g
fs
3.2
−
Mhos
(V =
8.0 Vdc, I
= 1.7 Adc)
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
324
35
455
50
pF
ns
iss
(V =
25 Vdc, V
= 0
V
,
DS
GS
Output Capacitance
Transfer Capacitance
C
oss
f = 1.0 MHz)
C
110
155
rss
Turn−On Delay Time
t
−
−
−
−
−
−
−
9.4
14
20
30
45
30
22
−
d(on)
(V =
30 Vdc, I
= 3.0 Adc,
Rise Time
t
DD
D
r
V
GS
= 10 Vdc,
Turn−Off Delay Time
Fall Time
t
21
R
d(off)
G
t
13
f
Gate Charge
Q
Q
Q
10.6
1.9
4.2
nC
T
1
2
(V =
48 Vdc, I
= 3.0 Adc,
DS
D
V
GS
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I =
3.0 Adc, V
= 0 Vdc)
V
SD
Vdc
ns
S
GS
(I =
3.0 Adc, V
= 0 Vdc,
−
−
0.89
0.74
1.0
−
S
GS
J
Reverse Recovery Time
t
rr
−
−
−
−
30
22
−
−
−
−
t
a
(I =
3.0 Adc, V
= 0 Vdc,
S
GS
S
t
b
8.6
0.04
Reverse Recovery Stored Charge
Q
m
C
RR
3. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
4. Switching
characteristics are independent of operating junction temperatures.
2
NTF3055−100, NVF3055−100
6
6
V
DS
≥
10 V
5
4
3
2
1
0
5
4
3
2
V
= 10 V
GS
V
= 5 V
GS
V
= 8 V
GS
V
= 4.5 V
GS
T =
25
°
C
J
V
GS
= 6 V
2
T =
100
°
C
J
1
0
V
3
= 4 V
GS
T =
−55
°
C
J
0
1
4
3
3.5
4
4.5
GATE−TO−SOURCE VOLTAGE (VOLTS)
GS,
5
5.5
6
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.16
0.14
0.16
0.14
0.12
0.1
V
GS
= 10 V
V
GS
= 15 V
T =
100
°
C
J
T =
100
°
C
J
0.12
0.1
T =
25
°
C
J
T =
25
°
C
J
0.08
0.06
0.04
0.02
0
0.08
0.06
T =
−55
°
C
J
T =
−55
°
C
J
0.04
0.02
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1000
100
2.2
2
V
GS
= 0 V
I
V
= 1.5 A
D
T =
150
°
C
J
= 10 V
GS
1.8
1.6
1.4
1.2
1
T =
125
°
C
J
T =
100
°
C
J
10
1
0.8
0.6
−50 −25
0
10
20
30
40
50
60
0
25
50
75 100 125 150
175
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 6. Drain−to−Source Leakage Current
versus Voltage
Figure 5. On−Resistance Variation with
Temperature
3
NTF3055−100, NVF3055−100
12
800
700
V
= 0 V
V
GS
= 0 V
DS
T =
25
°
C
J
Q
T
C
10
8
iss
600
500
V
GS
C
rss
400
300
200
100
C
C
6
4
2
iss
Q
1
Q
2
oss
C
rss
I
D
= 3 A
T =
25
°
C
J
0
0
0
V
GS
V
DS
10
5
0
5
10
15
20
25
2
4
6
8
10
12
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q ,
TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
3
2
1
100
V
= 30 V
= 3 A
= 10 V
DS
V
= 0 V
GS
t
f
I
D
T =
25
°
C
J
V
GS
t
d(off)
t
r
10
t
d(on)
1
0
1
10
R ,
GATE RESISTANCE (
W
)
100
0.54 0.58
0.62 0.66 0.7
0.74 0.78 0.82 0.86
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
100
10
80
70
60
50
40
30
20
10
V
= 20 V
GS
I
D
= 7 A
SINGLE PULSE
= 25
°
C
T
C
1
1 ms
10 ms
0.1
R
LIMIT
DS(on)
100
m
s
THERMAL LIMIT
PACKAGE LIMIT
dc
0.01
0
0.1
1
10
100
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , STARTING JUNCTION TEMPERATURE (
°
C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
4
NTF3055−100, NVF3055−100
100
D = 0.5
0.2
10 0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.00001
0.01
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 13. Thermal Response
5
NTF3055−100, NVF3055−100
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: INCH.
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
MIN
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
H
E
E
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
1
3
b
e1
e
2.00
7.30
0.069
0.276
−
0.078
0.287
C
q
H
E
q
A
0.08 (0003)
STYLE 3:
PIN 1.
GATE
2. DRAIN
A1
L
L1
0
°
1
0
°
0
°
1
0
°
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
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NTF3055−100/D
