onsemi-NTF6P02T3G
| Part # | onsemi-NTF6P02T3G |
Download  | onsemi-NTF6P02T3G |
NTF6P02, NVF6P02
P-Channel, SOT-223
-10 A, -20 V
Features
•
Low R
•
Logic Level Gate Drive
•
Diode Exhibits High Speed, Soft Recovery
•
Avalanche Energy Specified
DS(on)
−
10 AMPERES
−
20 VOLTS
R
DS(on)
= 44 m
W
(Typ.)
•
NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable*
S
•
These Devices are Pb
−
Free and are RoHS Compliant
G
Typical Applications
•
Power Management in Portables and Battery
−
Powered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
D
P
−
Channel MOSFET
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
MARKING DIAGRAM
& PIN ASSIGNMENT
Rating
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Symbol
Value
−
20
Unit
Vdc
Vdc
V
DSS
Drain
4
4
V
GS
8.0
1
2
3
−
Continuous @ T
= 25
°
C
I
−
10
−
8.4
−
35
Adc
A
D
D
AYW
F6P02
G
G
−
Continuous @ T
= 70
°
C
I
A
SOT
−
223
CASE 318E
STYLE 3
−
Single Pulse (t
= 10
m
s)
I
Apk
W
p
DM
T
o
tal Power Dissipation @ T
= 25
°
C
P
D
8.3
A
1
2
3
Operating and Storage
T
e
mperature Range
T , T
−
55 to
+150
°
C
J
stg
Gate Drain Source
Single Pulse Drain
−
to
−
Source Avalanche
E
150
mJ
°
C/W
°
C
A
Y
W
= Assembly Location
=
Y
e
ar
= Work Week
AS
Energy
−
Starting T
= 25
°
C
J
(V =
−
20 Vdc, V
=
−
5.0 Vdc,
DD
L(pk)
GS
I
=
−
10 A, L = 3.0 mH, R
= 25
W
)
G
F6P02 =
Specific Device Code
G
= Pb
−
Free Package
Thermal Resistance
R
15
71.4
160
(Note: Microdot may be in either location)
q
JL
JA
JA
R
R
q
q
Maximum Lead
T
e
mperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
260
L
ORDERING INFORMATION
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Steady
State.
4000 /
T
a
pe &
Reel
SOT
−
223
(Pb
−
Free)
NTF6P02T3G
2. When
surface mounted to an FR4 board using 1” pad size,
(Cu. Area 1.127 sq in), Steady State.
3. When
surface mounted to an FR4 board using minimum recommended pad
size, (Cu. Area 0.412 sq in), Steady State.
4000 /
T
a
pe &
Reel
SOT
−
223
(Pb
−
Free)
NVF6P02T3G*
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
May, 2019
−
Rev. 7
NTF6P02T3/D
NTF6P02, NVF6P02
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(V =
0 Vdc, I
=
−
250
m
Adc)
T
e
mperature Coefficient (Positive)
V
Vdc
mV/
°
C
m
Adc
(BR)DSS
−
20
−
25
−
11
−
−
GS
D
−
Zero Gate Voltage Drain Current
I
DSS
(V =
−
20 Vdc, V
= 0 Vdc)
−
−
−
−
−
1.0
−
10
DS
GS
(V =
−
20 Vdc, V
= 0 Vdc, T
= 125
°
C)
DS
GS
J
Gate
−
Body Leakage Current
(V 8.0
Vdc, V
= 0 Vdc)
I
−
−
100
nAdc
GSS
=
GS
DS
V
Vdc
mV/
°
C
m
W
GS(th)
(V =
V ,
I =
−
250
m
Adc)
−
0.4
−
0.7
−
1.0
DS
GS D
−
2.6
−
Threshold
T
e
mperature Coefficient (Negative)
R
DS(on)
(V =
−
4.5 Vdc, I
=
−
6.0 Adc)
−
−
−
44
57
57
50
70
−
GS
D
(V =
−
2.5 Vdc, I
=
−
4.0 Adc)
GS
D
(V =
−
2.5 Vdc, I
=
−
3.0 Adc)
GS
D
g
−
12
−
Mhos
pF
(V =
−
10 Vdc, I
=
−
6.0 Adc)
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
−
−
−
900
350
90
1200
500
150
−
(V =
−
16 Vdc, V
= 0 V,
iss
DS
GS
f = 1.0 MHz)
Output Capacitance
C
oss
Transfer Capacitance
Input Capacitance
C
rss
C
940
410
110
(V =
−
10 Vdc, V
= 0 V,
pF
iss
DS
GS
f = 1.0 MHz)
Output Capacitance
C
−
oss
Transfer Capacitance
C
−
rss
Turn
−
On Delay Time
Rise Time
t
−
−
−
−
−
−
−
−
−
−
−
7.0
25
75
50
8.0
30
60
60
15
1.7
6.0
12
45
125
85
−
(V =
−
5.0 Vdc, I
=
−
1.0 Adc,
ns
ns
d(on)
DD
D
V
=
−
4.5 Vdc,
GS
G
t
r
R
= 6.0
W
)
Turn
−
Off Delay Time
Fall Time
t
t
t
d(off)
t
f
Turn
−
On Delay Time
Rise Time
(V =
−
16 Vdc, I
=
−
6.0 Adc,
d(on)
DD
D
V
GS
R
=
−
4.5 Vdc,
G
t
r
−
= 2.5
W
)
Turn
−
Off Delay Time
Fall Time
−
d(off)
t
f
−
Q
20
−
Gate Charge
(V =
−
16 Vdc, I
=
−
6.0 Adc,
nC
T
DS
GS
D
V
Q
gs
gd
Q
−
SOURCE
−
DRAIN DIODE CHARACTERISTICS
Forward On
−
Voltage
V
−
−
−
−
0.82
−
0.74
−
0.68
−
1.2
−
Vdc
ns
S
GS
SD
(I =
−
2.1 Adc, V
= 0 Vdc)
S
GS
(I =
−
3.0 Adc, V
= 0 Vdc, T
= 125
°
C)
−
S
GS
J
t
−
−
−
−
42
17
−
−
−
−
Reverse Recovery Time
(I =
−
3.0 Adc, V
= 0 Vdc,
S GS
rr
S
t
a
t
25
b
Reverse Recovery Stored Charge
Q
0.036
m
C
RR
4. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
5. Switching
characteristics are independent of operating junction temperatures.
2
NTF6P02, NVF6P02
TYPICAL ELECTRICAL CHARACTERISTICS
12
−
10 V
−
7.0 V
−
5.0 V
9
12
−
2.2 V
T =
25
°
C
J
V
DS
≥
−
10 V
−
2.0 V
−
1.8 V
10
8
−
2.4 V
−
3.2 V
−
4.4 V
6
6
3
−
1.6 V
−
1.4 V
4
T =
−
55
°
C
J
2
0
T =
25
°
C
J
V
5
=
−
1.2 V
T =
100
°
C
J
GS
0
0
1
2
3
4
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
−
V
DS,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
−
V
GS,
GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.08
0.2
T =
25
°
C
J
0.07
0.06
0.05
0.04
I
=
−
6.0 A
D
0.15
0.1
V
=
−
2.5 V
=
−
4.5 V
GS
T =
25
°
C
J
V
GS
0.05
0
0.03
0.02
0
1
2
3
4
5
6
2
4
6
8
10
12
14
−
V
GS,
GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
−
I DRAIN
CURRENT (AMPS)
D,
Figure 3. On
−
Resistance versus
Gate
−
to
−
Source Voltage
Figure 4. On
−
Resistance versus Drain Current
and Gate Voltage
1.6
10,000
1000
100
I
V
=
−
6.0 A
D
V
GS
= 0 V
T =
150
°
C
J
=
−
4.5 V
GS
1.4
1.2
1.0
0.8
0.6
T =
100
°
C
J
−
50
−
25
0
25
50
75
100 125
150
2
4
6
8
10
12
14
16
18
20
−
V
DS,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 6. Drain
−
to
−
Source Leakage Current
Figure 5. On
−
Resistance Variation with
versus Voltage
Temperature
3
NTF6P02, NVF6P02
TYPICAL ELECTRICAL CHARACTERISTICS
3000
2400
1800
1200
5
20
V
DS
= 0 V
V
GS
= 0 V
Q
T
T =
25
°
C
J
C
iss
−
V
DS
4
3
2
16
12
8
−
V
GS
C
rss
Q
gs
Q
gd
C
iss
I
=
−
6.0 A
D
C
oss
600
0
4
0
1
0
T =
25
°
C
J
C
rss
−
V
GS
−
V
DS
10
5
0
5
10
15
20
0
4
8
12
16
GATE
−
TO
−
SOURCE OR DRAIN
−
TO
−
SOURCE VOLTAGE
Q ,
TOTAL GATE CHARGE (nC)
g
(VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage versus Total Charge
7
1000
100
V
=
−
16 V
=
−
3.0 A
=
−
4.5 V
DD
V
GS
= 0 V
I
D
6
5
4
3
2
T =
25
°
C
J
V
GS
t
t
d(off)
t
f
t
r
10
1
d(on)
1
0
1
10
R ,
GATE RESISTANCE (
W
)
100
0.3
0.6
0.9
1.2
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
4
NTF6P02, NVF6P02
TYPICAL ELECTRICAL CHARACTERISTICS
1
D = 0.5
0.2
0.1
NORMALIZED TO R
AT STEADY STATE (1
″
PAD)
q
JA
0.05
0.1
0.0175
W
0.0710
W
0.2706
W
0.5779
W
0.7086
W
0.0154 F
0.0854 F
0.3074 F
1.7891 F
107.55 F
AMBIENT
0.02
CHIP
JUNCTION
0.01
SINGLE PULSE
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
t, TIME (s)
1.0E+01
1.0E+02
1.0E+03
Figure 11. FET Thermal Response
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
DATE 02 OCT 2018
SCALE 1:1
q
q
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT
−
223 (TO
−
261)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
SOT
−
223 (TO
−
261)
CASE 318E
−
04
ISSUE R
DATE 02 OCT 2018
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1.
ANODE
STYLE 3:
STYLE 4:
PIN 1.
SOURCE
STYLE 5:
PIN 1.
DRAIN
PIN 1.
GATE
2. DRAIN
2. CATHODE
3. NC
2. DRAIN
3. GATE
4. DRAIN
2. GATE
3. SOURCE
4. DRAIN
3. SOURCE
4. GATE
4. CATHODE
STYLE 6:
PIN 1.
RETURN
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1.
ANODE 1
2. CATHODE
3. ANODE
2
CANCELLED
PIN 1.
INPUT
2. GROUND
3. LOGIC
PIN 1.
CATHODE
2. ANODE
2. INPUT
3. OUTPUT
4. INPUT
3. GATE
4. CATHODE
4. GROUND
4. ANODE
STYLE 11:
PIN 1.
MT 1
STYLE 12:
STYLE 13:
PIN 1.
INPUT
2. OUTPUT
3. NC
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2. MT
2
3. GATE
4. MT
2
4. OUTPUT
GENERIC
MARKING DIAGRAM*
AYW
XXXXX
G
G
1
A
Y
= Assembly Location
=
Y
e
ar
W
= Work Week
XXXXX =
Specific Device Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT
−
223 (TO
−
261)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
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onsemi
was negligent regarding the design or manufacture of the part.
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:
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o
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