onsemi-NTGD4167CT1G
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NTGD4167C
Power MOSFET
Complementary, 30 V, +2.9/
−
2.2 A,
TSOP
−
6 Dual
Features
•
Complementary N
−
Channel and P
−
Channel MOSFET
•
Small Size (3 x 3 mm) Dual TSOP
−
6 Package
•
Leading Edge Trench Technology for Low On Resistance
•
Reduced Gate Charge to Improve Switching Response
•
Independently Connected Devices to Provide Design Flexibility
•
This is a Pb
−
Free Device
V
R
MAX
D
(BR)DSS
DS(on)
90 m
W
@ 4.5 V
125 m
W
@ 2.5 V
170 m
W
@
−
4.5 V
300 m
W
@
−
2.5 V
2.6 A
2.2 A
N
−
Ch
30 V
−
1.9 A
−
1.0 A
P
−
Ch
−
30 V
Applications
•
DC
−
DC Conversion Circuits
•
Load/Power Switching with Level Shift
D1
D2
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Symbol
Value
30
Unit
V
V
DSS
G1
G2
(N
−
Ch & P
−
Ch)
T =
25
°
C
V
GS
12
V
N
−
Channel
Continuous Drain
Steady
State
I
D
2.6
1.9
A
A
S1
S2
T =
85
°
C
A
N
−
CHANNEL MOSFET
P
−
CHANNEL MOSFET
t
≤
5 s
T =
25
°
C
A
2.9
P
−
Channel
Continuous Drain
Steady
State
T =
25
°
C
T =
85
°
C
A
I
−
1.9
−
1.4
A
A
D
MARKING
DIAGRAM
t
≤
5 s
T =
25
°
C
A
−
2.2
0.9
1
Power Dissipation
Steady State
T =
25
°
C
P
W
A
A
D
TSOP
−
6
CASE 318G
STYLE 13
TA M
G
t
≤
5 s
1.1
G
Pulsed Drain
Current
N
−
Ch
P
−
Ch
t =
10
m
s
p
I
8.6
1
DM
−
6.3
TA =
Specific Device Code
M
G
= Date Code
= Pb
−
Free Package
Operating Junction and Storage
T
e
mperature
T , T
−
55 to
°
C
J
STG
150
(Note: Microdot may be in either location)
Source Current (Body Diode)
I
S
0.9
A
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
PIN CONNECTION
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
140
Unit
°
C/W
°
C/W
G1
S2
G2
D1
S1
D2
1
2
3
6
5
4
R
q
JA
R
110
q
JA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
(
T
o
p View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
December, 2008
−
Rev. 1
NTGD4167C/D
NTGD4167C
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
V
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
N
P
N
P
N
P
N
P
N
P
30
I
= 250
m
A
(BR)DSS
D
V
= 0 V
GS
−
30
I
D
=
−
250
m
A
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
21.4
22.2
mV/
°
C
m
A
(BR)DSS
J
Zero Gate Voltage Drain Current
I
1.0
−
1.0
10
V
= 0
V
, V
=
2
4 V
DS
DSS
GS
T =
25
°
C
J
V
GS
= 0
V
, V
=
−
24 V
DS
V
GS
= 0
V
, V
=
2
4 V
DS
T =
85
°
C
J
V
GS
= 0
V
, V
=
−
24 V
−
10
100
100
DS
Gate
−
to
−
Source Leakage Current
I
nA
V
V
V
= 0
V
, V
= 0
V
, V
=
=
12 V
12 V
GSS
DS
DS
GS
GS
Gate Threshold Voltage
V
N
P
N
0.5
0.9
1.5
−
1.5
90
I
= 250
m
A
GS(TH)
D
V
GS
= V
DS
−
0.5
−
1.1
I
D
=
−
250
m
A
Drain
−
to
−
Source On Resistance
R
52
67
V
= 4.5 V , I
= 2.6 A
D
DS(on)
GS
V
= 2.5 V , I
= 2.2 A
125
170
300
GS
D
m
W
P
130
202
2.6
2.6
V
=
−
4.5 V , I
=
−
1.9 A
D
GS
V
=
−
2.5
V
, I
=
−
1.0 A
GS
D
Forward Transconductance
g
FS
N
P
S
V
= 15
V
, I
=
2
.6 A
DS
D
V
=
−
15 V , I
=
−
1.9 A
DS
D
CHARGES AND CAPACITANCES
Input Capacitance
C
295
48
ISS
Output Capacitance
C
OSS
C
RSS
N
P
V
= 15 V
DS
Reverse Transfer Capacitance
Input Capacitance
27
f = 1 MHz, V
= 0 V
pF
GS
C
419
51
ISS
OSS
RSS
Output Capacitance
C
C
V
DS
=
−
15 V
Reverse Transfer Capacitance
T
o
tal Gate Charge
26
Q
3.7
0.6
0.9
0.8
3.9
0.6
1.0
1.0
5.5
6.0
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Gate Charge
Gate
−
to
−
Drain “Miller” Charge
T
o
tal Gate Charge
Q
G(TH)
N
P
V
= 4.5
V
, V
=
1
5
V
, I
=
2
.0 A
GS DS
D
Q
GS
GD
Q
nC
ns
Q
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Gate Charge
Gate
−
to
−
Drain “Miller” Charge
Q
G(TH)
V
GS
=
−
4.5
V
, V
=
−
15
V
, I
=
−
2.0 A
DS D
Q
GS
GD
Q
Turn
−
On Delay Time
Rise Time
t
7.0
4.0
14
d(ON)
t
r
N
P
V
= 4.5
V
, V
=
1
5
V
,
DD
GS
D
I
= 1.0 A, R
= 6.0
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
2.0
8.0
8.0
22
Turn
−
On Delay Time
Rise Time
t
d(ON)
t
r
V
GS
I
=
−
4.5
V
, V
=
−
15
V
,
DD
=
−
1.0 A, R
= 6.0
W
D
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
8.0
2. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
2
NTGD4167C
3. Switching
characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
V
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
N
P
0.7
−
0.8
8.0
5.0
3.0
3.0
12
1.2
I
= 0.9 A
S
V
GS
= 0
V
, T
=
2
5
°
C
J
I
=
−
0.9 A
−
1.2
S
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
GS
= 0
V
,
N
P
dI /
dt = 100 A/
m
s, I
= 0.9 A
S
S
Discharge Time
b
Reverse Recovery Charge
Reverse Recovery Time
Charge Time
Q
nC
ns
RR
RR
t
t
t
10
a
V
GS
= 0
V
,
dI /
dt = 100 A/
m
s, I
=
−
0.9 A
S
S
Discharge Time
2.0
7.0
b
Reverse Recovery Charge
Q
nC
RR
3
NTGD4167C
N
−
CHANNEL TYPICAL CHARACTERISTICS
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
9.0
V
= 4.5 V
T =
25
°
C
GS
J
V
DS
= 5 V
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
3.5 V
2.5 V
2.0 V
−
55
°
C
25
°
C
125
°
C
1.5 V
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
0.75
1
1.25
1.5
1.75
2
2.25
2.5
V
DS
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
T =
25
°
C
T =
25
°
C
J
J
V
V
= 2.5 V
= 4.5 V
GS
I
= 2.6 A
D
GS
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
V
GS
, GATE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Region vs. Gate
−
To
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Temperature
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
400
350
300
250
200
150
100
50
T =
25
°
C
I
V
= 2.6 A
J
D
V
GS
= 0 V
= 4.5 V
GS
C
ISS
f = 1 MHz
C
OSS
C
RSS
0
−
50
−
25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. On
−
Resistance Variation with
Figure 6. Capacitance Variation
Temperature
4
NTGD4167C
5
4
3
2
1
0
16
14
12
10
8
10
1.0
0.1
Q
T
V
DS
V
GS
T =
150
°
C
Q
J
GD
Q
GS
T =
25
°
C
6
J
4
I
= 2.0 A
D
T =
25
°
C
V
J
2
= 15 V
DS
0
0
1
2
3
4
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Q ,
TOTAL GATE CHARGE (nC)
G
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
Figure 7. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage versus Total Charge
Figure 8. Diode Forward Voltage versus
Current
40
30
20
10
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I
= 250
m
A
D
−
50
−
25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
100
1000
T , JUNCTION TEMPERATURE (
°
C)
J
SINGLE PULSE TIME (s)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Maximum Power
Dissipation
100
V
GS
= 12 V
Single Pulse
T =
25
°
C
A
10
1
100
m
s
1 ms
10 ms
0.1
R
Limit
DS(on)
Thermal Limit
Package Limit
dc
0.01
0.1
1
10
100
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
5
NTGD4167C
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.0001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 12. FET Thermal Response
6
NTGD4167C
P
−
CHANNEL TYPICAL CHARACTERISTICS
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
7.0
V
DS
=
−
5 V
V
=
−
5.0 V to
−
3.5 V
−
2.5 V
6.0
5.0
4.0
3.0
2.0
1.0
0
GS
−
3.0 V
−
2.0 V
−
1.5 V
25
°
C
125
°
C
−
55
°
C
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.75
1
1.25 1.5
1.75
2
2.25 2.5
2.75
3
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (V)
GS
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 14. Transfer Characteristics
Figure 13. On
−
Region Characteristics
0.5
0.45
0.4
0.5
0.45
0.4
T =
25
°
C
J
T =
25
°
C
J
0.35
0.3
0.35
0.3
V
GS
=
−
2.5 V
0.25
0.2
0.25
0.2
I
D
=
−
1.9 A
V
GS
=
−
4.5 V
0.15
0.1
0.15
0.1
0.05
0.05
0
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
−
V ,
GATE VOLTAGE (V)
GS
−
I ,
DRAIN CURRENT (A)
D
Figure 15. On
−
Region vs. Gate
−
To
−
Source
Figure 16. On
−
Resistance vs. Drain Current
Voltage
and Temperature
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
550
500
450
400
350
300
250
200
150
100
50
T =
25
°
C
J
I
V
=
−
1.9 A
D
V
GS
= 0 V
=
−
4.5 V
C
GS
ISS
f = 1 MHz
C
OSS
C
RSS
0
−
50
−
25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (
°
C)
J
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 17. On
−
Resistance Variation with
Figure 18. Capacitance Variation
Temperature
7
NTGD4167C
5
4
3
2
1
0
16
14
12
10
8
Q
T
−
V
GS
−
V
DS
Q
Q
GD
GS
6
I
D
=
−
2.0 A
4
T =
25
°
C
J
V
DS
=
−
15 V
2
0
0
1
2
3
4
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 19. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage versus Total Charge
10
1.0
0.1
1.4
1.3
1.2
1.1
1.0
I
=
−
250
m
A
D
T =
150
°
C
J
T =
25
°
C
J
0.9
0.8
0.7
0.6
0.5
0.4
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
−
50
−
25
0
25
50
75
100
125
150
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 20. Diode Forward Voltage versus
Current
Figure 21. Threshold Voltage
100
10
40
30
20
10
0
V
=
−
12 V
GS
Single Pulse
T =
25
°
C
A
100
m
s
1
1 ms
10 ms
0.1
R
Limit
DS(on)
Thermal Limit
Package Limit
dc
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
SINGLE PULSE TIME (s)
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 22. Single Pulse Maximum Power
Dissipation
Figure 23. Maximum Rated Forward Biased
Safe Operating Area
8
NTGD4167C
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.0001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 24. FET Thermal Response
ORDERING INFORMATION
Device
†
Package
Shipping
NTGD4167CT1G
TSOP6
(Pb
−
Free)
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
9
NTGD4167C
PACKAGE DIMENSIONS
TSOP
−
6
CASE 318G
−
02
ISSUE T
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS
A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
6
5
2
4
E
H
E
1
3
b
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0
°
NOM
1.00
0.06
0.38
0.18
3.00
1.50
0.95
0.40
2.75
−
MAX
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0
°
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
1
0
°
e
1.10
0.10
0.50
0.26
3.10
1.70
1.05
0.60
3.00
1
0
°
q
c
A
0.05 (0.002)
L
A1
H
E
q
STYLE 13:
PIN 1.
GATE 1
2. SOURCE
2
3. GATE
2
4. DRAIN
2
5. SOURCE
1
6. DRAIN
1
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.075
0.95
0.037
0.7
0.028
1.0
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
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NTGD4167C/D
