onsemi-NTH4L027N65S3F
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SUPERFET
)
III, FRFET
)
650
V
,
7
5 A, 27.4 m
W
NTH4L027N65S3F
Description
SUPERFET III MOSFET is ON Semiconductor’s brand
−
new high
voltage super
−
junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on
−
resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
27.4 m
W
@ 10 V
75 A
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
D
G
S1: Driver Source
S2: Power Source
Features
S1
S2
•
700 V @ T
= 150
°
C
J
•
Typ. R
= 23 m
W
DS(on)
POWER MOSFET
•
Ultra Low Gate Charge (Typ. Q
= 259 nC)
g
•
Low Effective Output Capacitance (Typ. C
= 1972 pF)
oss(eff.)
•
100% Avalanche Tested
•
These Devices are Pb
−
Free and are RoHS Compliant
Applications
D
•
Telecom / Server Power Supplies
•
Industrial Power Supplies
•
EV Charger
S2
S1
G
TO
−
247
−
4LD
CASE 340CJ
•
UPS / Solar
MARKING DIAGRAM
$Y&Z&3&K
NTH4L027
N65S3F
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (
Y
e
ar & Week)
= Lot
NTH4L027N65S3F =
Specific Device Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
November, 2019
−
Rev. 2
NTH4L027N65S3F/D
NTH4L027N65S3F
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
−
DC
30
V
−
AC (f > 1 Hz)
30
I
D
Drain Current
−
Continuous (T
= 25
°
C)
75
A
C
−
Continuous (T
= 100
°
C)
60
C
I
Drain Current
187.5
1610
15
A
mJ
A
DM
E
MOSFET dv/dt
AS
AS
I
E
5.95
100
mJ
V/ns
AR
dv/dt
Power Dissipation
50
P
(T =
25
°
C)
595
W
W/
°
C
°
C
D
C
−
Derate Above 25
°
C
4.76
−
55 to +150
300
T , T
Operating and Storage
T
e
mperature Range
J
STG
T
Maximum Lead
T
e
mperature for Soldering, 1/8
″
from Case for 5 seconds
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive
rating: pulse
−
width limited by maximum junction temperature.
2. I
= 15 A, R
= 25
W
, starting T
= 25
°
C.
AS
G
J
3. I
≤
37.5 A, di/dt
≤
200 A/
m
s, V
≤
400
V
,
s
tarting T
= 25
°
C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.21
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_
C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Top Marking
Package
Reel Size
Tape Width
Quantity
NTH4L027N65S3F
NTH4L027N65S3F
TO
−
247
−
4LD
Tube
N/A
N/A
30 Units
2
NTH4L027N65S3F
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
V
I
= 0
V
, I
= 1 mA, T
= 25
_
C
DSS
GS
D
J
= 0
V
, I
= 1 mA, T
= 150
_
C
GS
D
J
D
BV
/
D
T
Breakdown Voltage
T
e
mperature
Coefficient
= 15 mA, Referenced to 25
_
C
0.61
361
V/
_
C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650
V
, V
= 0 V
10
m
A
DSS
GS
= 520
V
, T
=
1
25
_
C
C
I
Gate to Body Leakage Current
=
30
V
, V
= 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V
, I
= 3 mA
3.0
5.0
V
m
W
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10
V
, I
=
3
5 A
23
56
27.4
D
g
FS
= 20
V
, I
=
3
7.5 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400
V
, V
= 0 V, f = 1
M
Hz
7690
200
1972
352
259
72
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
T
o
tal Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V
= 0 V
GS
oss(eff.)
C
= 0 V to 400 V, V
= 0 V
GS
oss(er.)
Q
= 400
V
, I
= 37.5 A, V
= 10 V
D GS
g(tot)
Q
gs
Q
99
gd
ESR
f = 1 MHz
1.2
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 400
V
, I
= 37.5 A, V
= 10 V
51
26
ns
ns
ns
ns
d(on)
DD
g
D
GS
R =
2
W
t
r
t
122
6.0
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
75
187.5
1.3
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0
V
, I
= 37.5
A
V
GS
SD
t
rr
= 400
V, I
= 37.5
A,
168
ns
nC
DD
SD
dI /dt
= 100 A/
m
s
F
Q
Reverse Recovery Charge
1014
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially
independent of operating temperature typical characteristics.
3
NTH4L027N65S3F
TYPICAL PERFORMANCE CHARACTERISTICS
200
100
300
V
GS
=
1
0.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
= 20 V
DS
250
m
s Pulse
T
e
st
100
10
1
150
°
C
10
1
25
°
C
−
55
°
C
250
m
s Pulse
T
e
st
= 25
°
C
T
C
0.1
1
10
20
2
3
V
4
5
6
7
8
V
DS
, Drain
−
Source Voltage (V)
, Gate
−
Source Voltage (V)
GS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
1000
100
10
0.04
0.03
0.02
0.01
V
= 0 V
T
C
= 25
°
C
GS
250
m
s Pulse
T
e
st
150
°
C
25
°
C
V
GS
= 10 V
1
V
GS
= 20 V
−
55
°
C
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
0
50
100
150
200
V
, Body Diode Forward Voltage (V)
I ,
Drain Current (A)
D
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 3. On
−
Resistance Variation vs.
Drain Current and Gate Voltage
10
8
1000000
100000
10000
1000
100
I
D
= 37.5 A
C
V
DS
= 130 V
iss
V
DS
= 400 V
6
C
oss
4
V
= 0 V
GS
10
f = 1 MHz
2
C
C
C
10
−
1
= C
+ C
(C =
shorted)
C
iss
gs gd
ds
rss
1
= C
+ C
gd
oss
rss
ds
= C
gd
0.1
0
10
0
10
1
10
2
10
3
0
60
g
120
180
240
300
Q ,
Total Gate Charge (nC)
V
DS
, Drain
−
Source Voltage (V)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
NTH4L027N65S3F
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)
1.2
1.1
1.0
0.9
0.8
3.0
V
I
= 0 V
= 15 mA
V
I
= 10 V
= 35 A
GS
GS
D
D
2.5
2.0
1.5
1.0
0.5
0.0
−
50
50
100
150
0
−
50
0
50
100
150
T ,
Junction Temperature (
5
C)
J
T ,
Junction Temperature (
5
C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On
−
Resistance Variation
vs. Temperature
80
60
40
20
0
500
100
30
m
s
100
m
s
1 ms
10 ms
DC
10
1
Operation in this Area
is Limited by R
DS(on)
T
C
= 25
°
C
T =
150
°
C
J
Single Pulse
0.1
150
1
10
100
1000
25
50
75
100
125
T ,
Case Temperature (
5
C)
V
DS
, Drain
−
Source Voltage (V)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
60
45
30
15
0
0
130
DS
260
390
520
650
V
, Drain to Source Voltage (V)
Figure 11. E
OSS
vs. Drain to Source Voltage
5
NTH4L027N65S3F
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
0.1
0.01
DM
t
1
t
2
Z
q
(t) = r(t) x R
q
JC
JC
R
= 0.21
°
C/W
q
JC
Peak T
= P
Duty Cycle, D = t
/ t
10
0
x Z
(t) + T
q
JC C
J
DM
SINGLE PULSE
10
−
4
1
2
0.001
10
−
5
10
−
3
10
−
2
10
−
1
10
1
10
2
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
6
NTH4L027N65S3F
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
E
AS
+
@
LI
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
7
NTH4L027N65S3F
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
−
dv/dt controlled by R
G
−
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
−
4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO
−
247
−
4LD
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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©
Semiconductor Components Industries, LLC, 2018
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−
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