onsemi-NTHL019N60S5F
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DATA SHEET
N-Channel, SUPERFET
)
V
,
FRFET
)
, TO247-3L
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
19 m
W
@ 10 V
75 A
D
600
V
,
1
9 m
W
, 75 A
NTHL019N60S5F
Description
G
The SUPERFET V MOSFET FRFET series, optimized reverse
recovery performance of body diode, can remove additional component
and improve system reliability for soft switching applications such as
PSFB and LLC.
S
Features
•
650 V @ T
= 150
°
C
J
•
Typ. R
= 15.2 m
W
•
100% Avalanche Tested
DS(on)
•
Pb
−
Free, Halogen Free/BFR Free and are RoHS Compliant
G
D
Applications
S
•
Telecom / Server Power Supplies
•
EV Charger / UPS / Solar / Industrial Power Supplies
TO
−
247 Long Leads
CASE 340CX
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
600
30
Unit
V
V
DSS
V
GSS
Gate
−
to
−
Source Voltage
DC
V
AC (f > 1 Hz)
30
T019N
60S5F
AYWWZZ
Continuous Drain Current
T
C
= 25
°
C
= 100
°
C
= 25
°
C
= 25
°
C
= 25
°
C
I
75
A
D
T
C
70
Power Dissipation
T
C
T
C
T
C
P
568
393
393
W
A
D
I
DM
Pulsed Source Current
I
A
SM
T019N60S5F =
Specific Device Code
A
= Assembly Location
Operating Junction and Storage
T
e
mperature
T , T
−
55 to
+150
°
C
YWW
ZZ
= Data Code (
Y
e
ar & Week)
= Assembly Lot
J
STG
Range
Source Current (Body Diode)
I
S
75
A
Single Pulse Avalanche
Energy
I =
12.4 A,
G
E
AS
1208
mJ
L
ORDERING INFORMATION
R
= 25
W
Avalanche Current
I
12.4
5.68
120
70
A
Device
NTHL019N60S5F
Package
Shipping
AS
MOSFET dv/dt
E
mJ
TO
−
247
30 Units / Tube
AR
dv/dt
V/ns
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 seconds)
T
L
260
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive
rating: pulse
−
width limited by maximum junction temperature.
2. I
≤
37.5 A, di/dt
≤
200 A/
m
s, V
≤
400
V
,
s
tarting T
= 25
°
C.
SD
DD
J
©
Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
February, 2022
−
Rev. 2
NTHL019N60S5F/D
NTHL019N60S5F
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.22
40
Unit
Thermal Resistance, Junction
−
to
−
Case, Max.
Thermal Resistance, Junction
−
to
−
Ambient, Max.
R
°
C/W
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
I
= 0
V
, I
= 1 mA, T
= 25
_
C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
D
V
/
= 10 mA, Referenced to 25
_
C
−
630
mV/
_
C
(BR)DSS
D
D
T
J
Zero Gate Voltage Drain Current
Gate
−
to
−
Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0
V
, V
= 600 V, T
= 25
_
C
−
−
−
−
10
m
A
DSS
GSS
DS
J
I
V
=
30
V
, V
= 0 V
100
nA
GS
DS
Drain
−
to
−
Source On Resistance
Gate Threshold Voltage
R
V
= 10
V
, I
=
3
7.5 A, T
= 25
_
C
−
3.2
−
15.2
−
19
4.8
−
m
W
V
DS(on)
GS
D
J
V
V
GS
= V
, I
= 15.7 mA, T
= 25
_
C
GS(th)
DS
D
J
Forward Trans
−
conductance
g
FS
V
DS
= 20
V
, I
=
3
7.5 A
96
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400
V
, V
= 0 V, f =
2
50 kHz
−
−
−
13400
203
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I
= Constant, V
= 0 V to 400
V
,
3174
OSS(tr.)
D
DS
= 0 V
V
GS
Energy Related Output Capacitance
T
o
tal Gate Charge
C
V
= 0 V to 400 V, V
= 0 V
−
−
−
−
−
343
252
75
−
−
−
−
−
OSS(er.)
DS
GS
Q
V
= 400
V
, I
=
3
7.5 A, V
= 10 V
nC
G(tot)
DD
D
GS
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Gate Resistance
Q
GS
Q
71
GD
R
f = 1 MHz
3.5
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
= 0/10
V
, V
=
4
00
V
,
−
−
−
−
73
45
204
4
−
−
−
−
ns
d(on)
GS
D
DD
I
= 37.5 A, R
= 2.2
W
G
t
r
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE-TO
−
DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= 0
V
, I
=
3
7.5 A, T
= 25
_
C
−
−
−
−
1.2
−
V
SD
RR
SD
J
t
V
= 0
V
, I
=
3
7.5 A,
204
1686
ns
nC
GS
SD
dI/dt = 100 A/
m
s, V
= 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
NTHL019N60S5F
TYPICAL CHARACTERISTICS
150
125
100
1000
V
GS
= 7.0 V
10 V
T
C
= 25
°
C
V
DS
= 20 V
6.0 V
100
75
50
25
0
5.5 V
10
1
5.0 V
4.5 V
T
= 150
°
C
T
= 25
°
C
T =
−
55
°
C
C
C
C
0
5
10
15
20
3
0
0
4
5
6
1.2
300
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.025
0.020
1000
100
10
V
GS
= 0 V
T
= 25
°
C
C
V
V
= 10 V
= 20 V
GS
T
C
= 25
°
C
0.015
0.010
GS
1
0.005
0
T
= 150
°
C
T =
−
55
°
C
C
C
0.1
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
I ,
DRAIN CURRENT (A)
V
SD
, DIODE FORWARD VOLTAGE (V)
D
Figure 3. On
−
Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
6
10
10
V
= 0 V
f = 250 kHz
C
C
C
= C
+ C
(C =
shorted)
GS GD
DS
GS
ISS
I
= 37.5 A
= C
+ C
= C
D
5
OSS
RSS
DS
GD
10
V
DS
= 130 V
GD
C
8
6
4
ISS
V
DS
= 400 V
4
10
3
10
C
C
OSS
2
10
RSS
1
10
2
0
0
10
−
1
10
0
100
200
300
400
500
600
50
100
150
200
250
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3
NTHL019N60S5F
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
V
= 0 V
= 10 mA
GS
V
= 10 V
= 37.5 A
GS
I
D
I
D
2.5
2.0
1.5
1.0
0.9
0.8
0.5
0
−
75
−
50
−
25
0
25 50 75
100 125 150 175
−
75
−
50
−
25
0
25 50
75 100
125 150 175
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On
−
Resistance Variation vs.
Temperature
80
70
60
50
40
30
20
1000
100
10
10
m
s
100
m
s
1 ms
Operation in this Area
10 ms
is Limited by R
DS(on)
1
DC
T
C
= 25
°
C
10
0
T =
150
°
C
J
Single Pulse
0.1
1
10
100
1000
25
50
75
100
125
150
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
50
40
30
20
10
0
0
100
200
300
400
500
600
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 11. E
OSS
vs. Drain
−
to
−
Source Voltage
4
NTHL019N60S5F
TYPICAL CHARACTERISTICS
1
D = 0.5
D = 0.2
0.1
D = 0.1
D = 0.05
D = 0.02
Notes:
(t) = 0.22
°
C/W Max
0.01
Z
q
JC
D = 0.01
Duty Cycle, D = t
/t
1
2
T
JM
= P
x Z
(t) + T
q
DM JC
C
Single Pulse
0.00001
0.001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Impedance
5
NTHL019N60S5F
V
GS
R
Q
g
L
V
DD
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
E
AS
+
@
LI
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
6
NTHL019N60S5F
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
−
dv/dt controlled by R
G
−
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other
countries.
7
NTHL019N60S5F
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi’s
product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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T
:
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