onsemi-NTHL075N065SC1
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DATA SHEET
M2, TO-247-3L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
650 V
85 m
ꢀ
@ 18 V
38 A
D
NTHL075N065SC1
Features
•
Typ. R
= 57 m
ꢀ
@ V
= 18 V
DS(on)
GS
Typ. R
= 75 m
ꢀ
@ V
= 15 V
G
DS(on)
GS
•
Ultra Low Gate Charge (Q
= 61 nC)
G(tot)
•
Low Output Capacitance (C
= 107 pF)
oss
S
•
100% Avalanche Tested
•
T =
175
°
C
J
•
This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb
−
Free 2LI (on second level interconnection)
Typical Applications
•
SMPS (Switching Mode Power Supplies)
•
Solar Inverters
•
UPS (Uninterruptable Power Supplies)
•
Energy Storages
G
D
S
TO
−
247 Long Leads
CASE 340CX
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
Unit
MARKING DIAGRAM
V
DSS
650
V
V
V
Gate
−
to
−
Source Voltage
V
GS
−
8/+22
−
5/+18
Recommended Operation Values
of Gate
−
to
−
Source Voltage
T
< 175
°
C
= 25
°
C
V
GSop
C
HL075N
065SC1
AYWWZZ
Continuous Drain
Steady
State
T
I
D
38
148
26
A
W
A
C
Power Dissipation
P
D
Continuous Drain
Steady
State
T
C
= 100
°
C
I
D
Power Dissipation
P
74
W
A
D
HL075N65SC1= Specific Device Code
A
= Assembly Location
Pulsed Drain Current
T
C
= 25
°
C
I
120
DM
YWW
ZZ
= Data Code (
Y
e
ar & Week)
= Assembly Lot
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+175
°
C
J
stg
Source Current (Body Diode)
I
38
83
A
S
ORDERING INFORMATION
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
Device
NTHL075N065SC1
Package
Shipping
Energy (I
L(pk)
TO247
−
3L
30 Units /
Tube
Maximum Lead
T
e
mperature for Soldering
(1/8
″
from case for 5 s)
T
260
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive
rating, limited by max junction temperature.
3. EAS
of 83 mJ is based on starting T
= 25
°
C; L = 1 mH, I
= 12.9 A,
J
AS
V
DD
= 50
V
, V
=
1
8
V
.
GS
©
Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
April, 2022
−
Rev. 1
NTHL075N065SC1/D
NTHL075N065SC1
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Max
1.01
40
Unit
R
°
C/W
ꢁ
JC
R
ꢁ
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
= 0
V
, I
= 1
m
A
650
−
−
−
V
(BR)DSS
GS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
I =
20 mA, referenced to 25
°
C
D
−
0.15
V/
°
C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
V
= 0
V
,
T =
25
°
C
−
−
−
−
−
−
10
1
ꢂ
A
mA
nA
DSS
GS
DS
J
= 650 V
T =
175
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
V
= +18/
−
5
V
, V
= 0 V
250
GSS
GS
DS
V
R
= V
, I
= 5 mA
1.8
−
5
−
2.8
−
4.3
+18
−
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain
−
to
−
Source On Resistance
V
GOP
V
GS
V
GS
V
GS
V
DS
= 15
V
, I
=
1
5 A, T
= 25
°
C
75
57
68
9
m
ꢀ
DS(on)
D
J
= 18
V
, I
=
1
5 A, T
= 25
°
C
−
85
−
D
J
= 18
V
, I
=
1
5 A, T
= 175
°
C
−
D
J
Forward Transconductance
g
= 10
V
, I
=
1
5 A
−
−
S
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0
V
, f = 1
M
Hz, V
= 325 V
−
−
−
−
−
−
−
1196
107
9
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
V
D
=
−
5/18
V
, V
=
5
20
V
,
61
G(TOT)
GS
DS
I
= 15 A
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Gate
−
Resistance
Q
Q
19
GS
18
GD
R
f = 1 MHz
5.8
ꢀ
G
SWITCHING CHARACTERISTICS
Turn
−
On Delay Time
Rise Time
t
V
V
D
R
=
−
5/18
V
,
−
−
−
−
−
−
−
10
12
20
7
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
= 400
V
,
t
r
I
= 15 A,
= 2.2
ꢀ
G
Turn
−
Off Delay Time
t
d(OFF)
inductive load
Fall Time
t
f
Turn
−
On Switching Loss
Turn
−
Off Switching Loss
T
o
tal Switching Loss
E
ON
38
16
54
ꢂ
J
E
OFF
E
tot
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Continuous Drain
−
Source Diode Forward
I
V
V
=
−
5
V
, T
=
2
5
°
C
−
−
−
−
−
38
120
−
A
V
SD
GS
J
Current
Pulsed Drain
−
Source Diode Forward
I
SDM
Forward Diode Voltage
V
=
−
5
V
, I
=
1
5 A, T
= 25
°
C
4.4
SD
GS
SD
J
2
NTHL075N065SC1
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified) (continued)
J
Parameter
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
=
−
5/18
V
, I
=
1
5 A,
−
−
−
−
−
−
18
85
−
−
−
−
−
−
ns
nC
ꢂ
J
A
RR
GS
S
SD
dI /dt
= 1000 A/
ꢂ
s
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
10.6
10
I
RRM
Ta
10
ns
ns
Discharge Time
Tb
8
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
NTHL075N065SC1
TYPICAL CHARACTERISTICS
5
60
50
40
30
20
V
= 18 V
15 V
GS
12 V
4
V
GS
= 12 V
3
10 V
9 V
2
15 V
18 V
1
0
10
0
8 V
7 V
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
1.7
300
200
I
V
= 15 A
I
D
= 15 A
D
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
= 18 V
GS
T =
25
°
C
J
T =
150
°
C
J
100
0
0.8
0.7
−
75
−
50
−
25
0
25 50 75
100 125 150 175 200
8
10
12
14
16
18
T , JUNCTION TEMPERATURE (
°
C)
J
V
, GATE
−
TO
−
SOURCE VOLTAGE (V)
GS
Figure 3. On
−
Resistance Variation with
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Temperature
Voltage
100
80
70
60
50
40
30
20
V
DS
= 10 V
V
GS
=
−
5 V
T =
25
°
C
J
T =
175
°
C
J
T =
25
°
C
J
10
T =
175
°
C
J
T =
−
55
°
C
J
T =
−
55
°
C
J
10
0
1
2
3
4
5
6
7
8
4
6
8
10
12
14
16
18
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
4
NTHL075N065SC1
TYPICAL CHARACTERISTICS
(continued)
18
15
12
9
10000
V
DD
= 390 V
I
D
= 15 A
C
iss
V
DD
= 520 V
1000
100
V
DD
= 650 V
C
oss
6
3
C
rss
0
10
1
f = 1 MHz
= 0 V
−
3
−
6
V
GS
0
15
30
45
60
75
0.1
1
10
100
650
175
1
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
DS
g
Figure 7. Gate
−
to
−
Source Voltage vs. Total
Figure 8. Capacitance vs. Drain
−
to
−
Source
Charge
Voltage
100
40
30
20
V
GS
= 18 V
T =
25
°
C
J
10
10
0
R
= 1.01
°
C/W
ꢁ
JC
1
25
50
75
100
125
150
0.001
0.01
0.1
1
t
, TIME IN AVALANCHE (ms)
T ,
CASE TEMPERATURE (
°
C)
C
AV
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
300
100
20000
10000
Single Pulse
Single Pulse
R
T
= 1.01
°
C/W
R
T
= 1.01
°
C/W
= 25
°
C
ꢁ
JC
= 25
°
C
ꢁ
JC
C
10
ꢂ
s
C
10
100
ꢂ
s
1000
100
10 ms
Limit
1 ms
1
R
DS(on)
Thermal Limit
Package Limit
100 ms/DC
100
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
0.1
0.00001 0.0001
0.001
0.01
0.1
0.1
1
10
1000
V
DS
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
5
NTHL075N065SC1
TYPICAL CHARACTERISTICS
(continued)
1
0.5 Duty Cycle
0.2
0.1
0.1
0.05
Notes:
= 1.01
°
C/W
P
DM
0.02
R
ꢁ
JC
Peak T
= P
Duty Cycle, D = t
/t
x Z
(t) + T
ꢁ
JC C
J
DM
0.01
t
1
1
2
t
2
Single Pulse
0.00001
0.01
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction
−
to
−
Case Thermal Response
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
−
3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO
−
247
−
3LD
PAGE 1 OF 1
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©
Semiconductor Components Industries, LLC, 2018
onsemi
,
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onsemi
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