onsemi-NTHLD040N65S3HF
| Part # | onsemi-NTHLD040N65S3HF |
Download  | onsemi-NTHLD040N65S3HF |
SUPERFET
)
III, FRFET
)
650
V
,
6
5 A, 40 m
W
NTHLD040N65S3HF
Description
SUPERFET III MOSFET is ON Semiconductor’s brand
−
new high
voltage super
−
junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on
–
resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
40 m
W
@ 10 V
65 A
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency
.
SUPERFET III FRFET
MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability
.
D
G
Features
•
700 V @ T
= 150
°
C
J
•
Typ. R
= 32 m
W
DS(on)
S
•
Ultra Low Gate Charge (Typ. Q
= 159 nC)
g
•
Low Effective Output Capacitance (Typ. C
= 1367 pF)
oss(eff.)
•
100% Avalanche Tested
•
These Devices are Pb
−
Free, Halogen Free/BFR Free
and are RoHS Compliant
G
D
Applications
S
•
Telecom / Server Power Supplies
•
Industrial Power Supplies
•
EV Charger
TO
−
247AD
CASE 340AL
•
UPS / Solar
MARKING DIAGRAM
NTHD040
N65S3HF
AYWWG
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
= Pb
−
Free Package
G
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2021
−
Rev. 2
NTHLD040N65S3HF/D
NTHLD040N65S3HF
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
−
DC
30
V
−
AC (f > 1 Hz)
30
I
D
Drain Current
−
Continuous (T
= 25
°
C)
65
A
C
−
Continuous (T
= 100
°
C)
45
C
I
Drain Current
162.5
1009
9
A
mJ
A
DM
E
MOSFET dv/dt
AS
AS
I
E
4.46
100
mJ
V/ns
AR
dv/dt
Power Dissipation
50
P
(T =
25
°
C)
446
W
W/
°
C
°
C
D
C
−
Derate Above 25
°
C
3.57
−
55 to +150
300
T , T
Operating and Storage
T
e
mperature Range
J
STG
T
Maximum Lead
T
e
mperature for Soldering, 1/8
″
from Case for 5 seconds
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive
rating: pulse
−
width limited by maximum junction temperature.
2. I
= 9 A, R
= 25
W
, starting T
= 25
°
C.
AS
G
J
3. I
≤
32.5 A, di/dt
≤
200 A/
m
s, V
≤
400
V
,
s
tarting T
= 25
°
C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.28
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_
C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
NTHLD040N65S3HF
NTHLD040N65S3HF
TO
−
247
Tube
N/A
30 Units
2
NTHLD040N65S3HF
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
V
I
= 0
V
, I
= 1 mA, T
= 25
_
C
DSS
GS
D
J
= 0
V
, I
= 1 mA, T
= 150
_
C
GS
D
J
D
BV
/
D
T
Breakdown Voltage
T
e
mperature
Coefficient
= 15 mA, Referenced to 25
_
C
0.63
213
V/
_
C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650
V
, V
= 0 V
10
m
A
DSS
GS
= 520
V
, T
=
1
25
_
C
C
I
Gate to Body Leakage Current
=
30
V
, V
= 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V
, I
= 2.1 mA
3.0
5.0
40
V
m
W
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10
V
, I
=
3
2.5 A
32
48
D
g
FS
= 20
V
, I
=
3
2.5 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400
V
, V
= 0 V, f = 1
M
Hz
5945
135
1367
245
159
46
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V
= 0 V
GS
oss(eff.)
C
= 0 V to 400 V, V
= 0 V
GS
oss(er.)
Q
= 400
V
, I
=
3
2.5 A, V
= 10 V
D GS
g(tot)
Q
gs
Q
64
gd
ESR
f = 1 MHz
1.2
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400
V
, I
=
3
2.5 A,
40
32
ns
ns
ns
ns
d(on)
DD
GS
D
= 10
V
, R
=
2
.2
W
g
t
r
t
102
26
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
65
162.5
1.3
A
A
V
S
I
SM
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0
V
, I
=
3
2.5 A
SD
t
Reverse Recovery Time
V
= 400
V
, I
=
3
2.5 A,
160
874
ns
rr
DD
F
SD
dI /dt
= 100 A/
m
s
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially
independent of operating temperature typical characteristics.
3
NTHLD040N65S3HF
TYPICAL PERFORMANCE CHARACTERISTICS
200
100
300
V
GS
=
10.0V
*Notes:
= 20V
8.0V
7.0V
6.5V
6.0V
5.5V
1.
V
DS
2. 25
0
m
s Pulse Test
100
150
o
C
10
10
25
o
C
−
55
o
C
*Notes:
1. 250
m
s Pulse Test
2. T
C
= 25
o
C
1
1
2
3
4
5
6
7
8
0.2
1
10
20
V
DS
, Drain
−
Source Voltage[V]
V
GS
, Gate
−
Source Voltage[V]
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.05
0.04
0.03
0.02
1000
100
10
*Note: T
C
= 25
o
C
*Notes:
1. V
GS
= 0V
m
s Pulse Test
2. 250
15
0
o
C
V
GS
= 10V
1
2
5
o
C
V
GS
= 20V
0.1
−
55
o
C
0.01
0.001
0.0
0.5
1.0
1.5
2.0
0
50
100
150
200
I
D
, Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
Figure 3. On
−
Resistance Variation
Figure 4. Body Diode Forward Voltage
vs. Drain Current and Gate Voltage
Variation vs. Source Current and Temperature
10
1000000
100000
*Note:
I
D
= 32.5A
V
DS
= 130V
8
6
4
C
iss
10000
1000
100
V
D
S
= 400V
C
oss
*Note:
1. f = 1 MHz
2. V
= 0 V
C
rss
GS
2
0
C
+ C
(C
= shorted)
= C
gs
iss
oss
rss
gd ds
= C
+ C
10
1
C
C
gd
ds
= C
gd
0.1
1
10
100
1000
0
32
64
96
128
160
V
DS
, Drain
−
Source Voltage [V]
Q
g
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
NTHLD040N65S3HF
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
1.2
1.1
1.0
0.9
0.8
2.5
*Notes:
1. V
= 10V
*Notes:
1. V
= 0V
GS
GS
2.
I
D
= 32.5A
2.
I
D
= 15mA
2.0
1.5
1.0
0.5
0.0
−
50
0
50
100
150
−
50
0
50
100
150
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On
−
Resistance Variation
vs. Temperature
80
60
40
20
0
500
100
30
m
s
100
m
s
1ms
10ms
DC
10
1
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
0.1
0.01
25
50
75
100
125
150
1
10
100
1000
T
C
, Case Temperature [
o
C]
V
DS
, Drain
−
Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
37
29.6
22.2
14.8
7.4
0
0
130
260
390
520
650
, Drain to Source Voltage [V]
V
DS
Figure 11. Eoss vs. Drain to Source Voltage
5
NTHLD040N65S3HF
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
(t) = r(t) x R
o
q
JC
q
JC
R
= 0.28
C/W
q
JC
Peak T
= P
Duty Cycle, D = t
/ t
x Z
(t) + T
SINGLE PULSE
10
−
4
J
DM
q
JC
C
1
2
0.001
10
−
5
10
−
3
10
−
2
10
−
1
10
0
10
1
10
2
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
6
NTHLD040N65S3HF
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
E
AS
+
@
LI
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
7
NTHLD040N65S3HF
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
−
dv/dt controlled by R
G
−
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. SLOT
REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BOD
Y
.
5. LEAD
FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6.
∅
P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5
°
TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION
A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X
b2
c
F
2.655
19.80
3.81
—
20.80
4.32
b4
3X
b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO
−
247
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
