onsemi-NTHS5441T1
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NTHS5441
P-Channel, ChipFET
-20
V
,
–
5.3 A
Features
•
Low R
DS(on)
•
Higher Efficiency Extending Battery Life
•
Logic Level Gate Drive
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
−
20 V
46 m
W
@
−
4.5 V
−
5.3 A
•
Miniature ChipFET Surface Mount Package
•
Pb
−
Free Package is Available
S
Applications
G
•
Power Management in Portable and Battery
−
Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
D
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
Steady
State
P
−
Channel MOSFET
Rating
Drain
−
Source Voltage
Gate
−
Source Voltage
Continuous Drain Current
Symbol
5 sec
Unit
V
V
DS
V
GS
−
20
“
12
V
8
ChipFET
CASE 1206A
STYLE 1
I
D
A
J
1
−
5.3
−
3.8
−
3.9
−
2.8
T =
25
°
C
A
T =
85
°
C
A
PIN
CONNECTIONS
MARKING
DIAGRAM
Pulsed Drain Current
I
“
20
A
A
DM
Continuous Source Current
I
S
−
5.3
−
3.9
8
7
6
5
1
2
3
4
D
D
D
S
D
D
D
G
1
2
3
4
8
7
6
5
Maximum Power Dissipation
P
W
D
2.5
1.3
1.3
0.7
T =
25
°
C
A
T =
85
°
C
A
Operating Junction and Storage
T
e
mperature Range
T , T
J
−
55 to +150
°
C
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
A3 = Specific Device Code
M =
Month Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
1. Surface
Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
ORDERING INFORMATION
†
Device
Package
Shipping
NTHS5441T1
ChipFET
3000/
T
a
pe & Reel
ChipFET
(Pb
−
Free)
NTHS5441T1G
3000/
T
a
pe & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
May, 2019
−
Rev. 13
NTHS5441T1/D
NTHS5441
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
t
v
5 sec
Steady State
R
°
C/W
q
JA
40
80
50
95
Maximum Junction
−
to
−
Foot (Drain)
Steady State
R
15
20
°
C/W
q
JF
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate
−
Body Leakage
V
V
= V
, I
=
−
250
m
A
−
0.6
−
1.2
V
GS(th)
DS
GS
D
I
V
= 0
V
, V
=
“
12 V
“
100
−
1.0
nA
m
A
GSS
DS
GS
Zero Gate Voltage Drain Current
I
V
=
−
16
V
, V
= 0 V
GS
DSS
DS
DS
V
=
−
16
V
, V
= 0 V,
−
5.0
GS
T =
85
°
C
J
I
V
DS
v
−
5.0
V
, V
=
−
4.5 V
−
20
A
D(on)
GS
r
V
GS
V
GS
=
−
3.6
V
, I
=
−
3.7 A
−
−
0.050
0.046
0.06
−
W
DS(on)
D
=
−
4.5
V
, I
=
−
3.9 A
D
V
=
−
2.5
V
, I
=
−
3.1 A
0.070
12
0.083
GS
D
g
V
=
−
10
V
, I
=
−
3.9 A
mhos
V
fs
DS
D
V
SD
I
S
=
−
2.1 A, V
= 0 V
−
0.8
−
1.2
GS
T
o
tal Gate Charge
Q
9.7
1.2
3.6
710
400
140
14
22
nC
pF
ns
G
V
=
−
10
V
, V
=
−
4.5
V
,
GS
DS
Gate
−
Source Charge
Gate
−
Drain Charge
Input Capacitance
Q
GS
Q
GD
I
=
−
3.9 A
D
C
iss
V
DS
=
−
5.0 Vdc, V
= 0 Vdc,
GS
Output Capacitance
Reverse Transfer Capacitance
Turn
−
On Delay Time
Rise Time
C
oss
f = 1.0 MHz
C
rss
t
30
55
d(on)
V
=
−
10
V
, R
=
1
0
W
L
t
r
22
DD
I
D
^
−
1.0 A, V
=
−
4.5
V
,
GEN
Turn
−
Off Delay Time
Fall Time
t
42
100
70
R
= 6
W
d(off)
G
t
f
35
Source
−
Drain Reverse Recovery Time
t
rr
I =
−
1.1 A, di/dt = 100 A/
m
s
F
30
60
2. Surface
Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
3. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2%.
4. Guaranteed
by design, not subject to production testing.
2
NTHS5441
TYPICAL ELECTRICAL CHARACTERISTICS
20
16
12
8
20
−
5 V
−
3.5 V
−
3 V
T =
−
55
°
C
J
T =
25
°
C
J
16
12
8
−
4.5 V
−
4 V
25
°
C
125
°
C
−
2.5 V
−
2 V
4
0
4
0
V
GS
=
−
1.5 V
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
GS
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.2
0.2
0.15
0.1
T =
25
°
C
J
I
=
−
3.9 A
D
T =
25
°
C
J
0.15
0.1
V
GS
= 2.5 V
V
= 3.6 V
= 4.5 V
GS
0.05
0
0.05
0
V
GS
2
6
10
14
18
20
0
1
2
3
4
5
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
GS
−
I DRAIN
CURRENT (AMPS)
D,
Figure 4. On
−
Resistance versus Drain Current
Figure 3. On
−
Resistance versus
Gate
−
to
−
Source Voltage
and Gate Voltage
1.6
I
D
=
−
3.9 A
V
GS
=
−
4.5 V
1.4
1.2
1
0.8
0.6
−
50
−
25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 5. On
−
Resistance Variation with
Temperature
3
NTHS5441
TYPICAL ELECTRICAL CHARACTERISTICS
5
11
10
9
1500
1200
900
Q
G
T =
25
°
C
GS
J
V
4
3
2
1
0
= 0
8
7
6
C
C
iss
Q
GS
5
Q
GD
600
4
oss
3
I
=
−
3.9 A
D
T =
25
°
C
Q
J
300
0
2
C
/Q =
3.0
GD GS
rss
1
0
0
1
2
3
4
5
6
7
8
9
10
0
1
4
8
12
16
20
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE ()
Q ,
TOTAL GATE CHARGE (nC)
G
DS
Figure 6. Capacitance Variation
Figure 7. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage versus Total Charge
Duty Cycle = 0.5
0.2
0.1
P
DM
0.1
0.05
0.02
PER UNIT BASE = R
= 80
°
C/W
q
JA
T
– T
= P
Z
q
DM JA
(t)
JM
A
t
1
SURFACE MOUNTED
t
2
DUTY CYCLE, D = t
/t
1
2
Single Pulse
0.001
0.01
0.0001
0.01
0.1
1
10
100
1000
SQUARE WAVE PULSE DURATION (sec)
Figure 8. Normalized Thermal Transient Impedance, Junction
−
to
−
Ambient
5
4
3
2
V
= 0 V
GS
T =
25
°
C
J
1
0
0.1
0.3
0.5
0.7
0.9
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (VOLTS)
SD
Figure 9. Diode Forward Voltage versus
Current
ChipFET is a trademark of Vishay Siliconix.
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ChipFET
t
CASE1206A
−
03
ISSUE K
8
DATE 19
MAY 2009
1
SCALE 1:1
NOTES:
D
q
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. MOLD
GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME
TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS
A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO
MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
L
8
1
7
2
6
3
5
4
5
4
6
3
7
2
8
1
H
E
E
MILLIMETERS
INCHES
NOM
0.041
0.012
0.006
DIM
A
b
c
D
E
e
e1
L
MIN
1.00
0.25
0.10
2.95
1.55
NOM
1.05
MAX
MIN
MAX
0.043
0.014
0.008
0.122
0.067
e1
b
1.10
0.35
0.20
3.10
1.70
0.039
0.010
0.004
0.116
0.061
c
0.30
e
0.15
3.05
0.120
0.065
RESET
1.65
0.65 BSC
0.55 BSC
0.35
1.90
5
°
NOM
0.025 BSC
0.022 BSC
0.014
0.075
5
°
NOM
A
0.28
1.80
0.42
2.00
0.011
0.071
0.017
0.079
H
E
q
0.05 (0.002)
STYLE 1:
STYLE 2:
PIN 1.
SOURCE 1
2. GATE
1
STYLE 3:
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
ANODE
2. DRAIN
PIN 1.
DRAIN
2. DRAIN
3. DRAIN
4. GATE
PIN 1.
ANODE
2. ANODE
3. SOURCE
4. GATE
PIN 1.
COLLECTOR
2. COLLECTOR
3. COLLECTOR
4. BASE
PIN 1.
ANODE
2. ANODE
3. DRAIN
3. SOURCE
2
4. GATE
2
5. DRAIN
2
6. DRAIN
2
7. DRAIN
1
8. DRAIN
1
3. DRAIN
4. GATE
5. SOURCE
6. DRAIN
7. DRAIN
8. CATHODE
/ DRAIN
4. DRAIN
5. SOURCE
6. GATE
7. CATHODE
8. CATHODE
5. SOURCE
6. DRAIN
7. DRAIN
8. DRAIN
5. DRAIN
6. DRAIN
7. CATHODE
8. CATHODE
5. EMITTER
6. COLLECTOR
7. COLLECTOR
8. COLLECTOR
SOLDERING FOOTPRINT
GENERIC
MARKING DIAGRAM*
2.032
0.08
1
xxx M
G
G
xxx
M
= Specific Device Code
= Month Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
2.362
0.093
0.65
0.025
PITCH
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
8X
0.66
0.026
0.457
0.018
8X
mm
inches
ǒ
Ǔ
Basic Style
OPTIONAL SOLDERING FOOTPRINTS ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON03078D
ChipFET
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ChipFET
t
CASE 1206A
−
03
ISSUE K
DATE 19 MAY 2009
ADDITIONAL SOLDERING FOOTPRINTS*
2.032
0.08
2.032
0.08
1
1
0.457
0.018
4X
2X
1.092
0.043
1.727
0.068
2.362
0.093
2.362
0.093
0.65
0.025
PITCH
4X
0.66
0.026
2X
2X
1.118
0.044
0.457
0.018
0.66
0.026
2X
mm
inches
ǒ
Ǔ
mm
inches
ǒ
Ǔ
Styles 1 and 4
Style 2
2.032
0.08
2.032
0.08
2X
2X
0.66
0.66
0.026
0.026
1
1
1.092
0.043
1.092
0.043
2.362
0.093
2.362
0.093
0.65
0.025
PITCH
0.65
0.025
PITCH
1.118
0.044
1.118
0.044
2X
0.457
0.018
2X
0.457
0.018
mm
inches
mm
inches
ǒ
Ǔ
ǒ
Ǔ
Style 3
Style 5
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON03078D
ChipFET
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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−
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−
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o
ll Free USA/Canada
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