onsemi-NTJD4152PT2G
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NTJD4152
P
,
N
VJD4152P
MOSFET
– Dual, P-Channel,
Trench Small Signal, ESD
Protected, SC-88
20
V
,
0
.88 A
Features
•
Leading Trench Technology for Low R
•
Small Footprint Package (SC70
−
6 Equivalent)
•
ESD Protected Gate
•
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
PPAP Capable
Performance
DS(ON)
V
R
Typ
I Max
D
(BR)DSS
DS(on)
215 m
W
@
−
4.5 V
345 m
W
@
−
2.5 V
−
20 V
−
0.88 A
600 m
W
@
−
1.8 V
•
These are Pb
−
Free Devices
Applications
•
Load/Power Management
•
Charging Circuits
S
1
2
3
6
5
4
D
1
1
•
Load Switching
•
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
G
G
2
1
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
−
20
Unit
V
D
S
2
2
V
DSS
Gate
−
to
−
Source Voltage
V
GS
12
V
T
o
p View
Continuous Drain
Steady T
= 25
°
C
I
−
0.88
−
0.63
0.272
0.141
−
1.0
A
A
D
State
T =
85
°
C
A
MARKING DIAGRAM &
PIN ASSIGNMENT
Power Dissipation
Steady T
= 25
°
C
P
W
A
A
D
D
State
T =
85
°
C
A
D1 G2 S2
6
Continuous Drain
t
v
5 s
T =
25
°
C
I
D
A
1
T =
85
°
C
−
0.72
0.35
0.181
3.0
A
SC
−
88/SOT
−
363
CASE 419B
STYLE 26
XXX M
G
Power Dissipation
t
v
5 s
T =
25
°
C
P
W
G
A
T =
85
°
C
A
1
Pulsed Drain Current
t
≤
10
m
s
I
A
S1 G1 D2
DM
Operating Junction and Storage
T
e
mperature
T ,
STG
−
55 to
150
°
C
J
XXX
M
= Device Code
= Date Code
T
G
= Pb
−
Free Package
Continuous Source Current (Body Diode)
I
−
0.48
A
S
(Note: Microdot may be in either location)
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 s)
260
°
C
T
L
Parameter
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Symbol Max Unit
Junction
−
to
−
Ambient – Steady State
Junction
−
to
−
Ambient
−
t
v
5 s
Junction
−
to
−
Lead – Steady State
R
R
460
°
C/W
357
q
q
JA
JA
R
226
q
JL
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface
mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), steady state.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
May, 2019
−
Rev. 6
NTJD4152P/D
NTJD4152
P
,
N
VJD4152P
2. Surface
mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), t
v
5 s.
2
NTJD4152
P
,
N
VJD4152P
ELECTRICAL CHARACTERISTICS
(T =25
°
C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
= 0
V
, I
=
−
250
m
A
−
20
V
(BR)DSS
GS
D
I
T =
25
°
C
J
−
1.0
−
5.0
1.0
m
A
DSS
V
GS
= 0
V
, V
=
−
16 V
DS
T =
125
°
C
J
−
1.0
0.03
6.0
Gate
−
to
−
Source Leakage Current
I
V
DS
= 0
V
, V
=
=
4.5 V
12 V
m
A
GSS
GS
V
= 0
V
, V
GS
DS
Gate Threshold Voltage
V
V
= V
, I
=
−
250
m
A
−
0.45
−
1.2
260
V
GS(TH)
GS
DS
D
Drain
−
to
−
Source On Resistance
R
V
=
−
4.5 V, I
=
−
0.88 A
215
345
600
3.0
m
W
DS(on)
GS
GS
GS
D
V
V
=
−
2.5 V, I
=
−
0.71 A
500
D
=
−
1.8 V, I
=
−
0.20 A
1000
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
DS
=
−
10 V, I
=
−
0.88 A
S
D
C
155
25
pF
ISS
V
= 0
V
, f =
1
.0 MHz,
GS
Output Capacitance
C
C
OSS
RSS
V
DS
=
−
20 V
Reverse Transfer Capacitance
T
o
tal Gate Charge
18
Q
2.2
0.5
0.65
nC
ns
G(TOT)
V
V
=
−
4.5
V
, V
=
−
10 V,
DS
GS
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
Q
GS
I
D
=
−
0.88 A
GD
Turn
−
On Delay Time
Rise Time
t
5.8
6.5
d(ON)
t
r
=
−
4.5 V, V
=
−
10 V,
GS
I
DD
=
−
0.5 A, R
= 20
W
D
G
Turn
−
Off Delay Time
Fall Time
t
13.5
3.5
d(OFF)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T =
25
°
C
−
0.8
−
1.2
V
J
V
S
= 0
V
,
GS
I =
−
0.48 A
T =
125
°
C
J
−
0.66
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: pulse width
≤
300
m
s, duty cycle
≤
2%.
4. Switching
characteristics are independent of operating junction temperatures.
3
NTJD4152
P
,
N
VJD4152P
TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
1
0.75
0.5
1
T =
25
°
C
V
DS
≥
−
20 V
V
GS
=
−
4.5,
−
3.5 &
−
2.5 V
J
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−
2 V
−
1.75 V
−
1.5 V
125
°
C
0.25
0
25
°
C
−
1.25 V
−
1 V
0.1
0
T =
−
55
°
C
J
0
0.4
0.8
1.2
1.6
2
0
0.5
1
1.5
2
2.5
3
3.5
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
GS
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.3
2.5
2.0
T =
25
°
C
J
V
GS
=
−
4.5 V
T =
125
°
C
J
0.25
0.2
V
GS
=
−
1.8 V
1.5
1.0
T =
25
°
C
J
0.15
0.1
T =
−
55
°
C
0.5
0
J
V
=
−
2.5 V
GS
V
=
−
4.5 V
GS
0
0.25
0.5
0.75
1
0.4
0.5
0.6
0.7
0.9
1
0.8
−
I DRAIN
CURRENT (AMPS)
D,
−
I DRAIN
CURRENT (AMPS)
D,
Figure 4. On
−
Resistance vs. Drain Current and
Figure 3. On
−
Resistance vs. Drain Current and
Gate Voltage
Temperature
2.0
10000
1000
I
V
=
−
0.88 A
V
GS
= 0 V
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
=
−
4.5 V
GS
T =
150
°
C
J
T =
125
°
C
J
100
10
0.2
0
−
50
−
25
0
25
50
75
100
125
150
0
5
10
15
20
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
4
NTJD4152
P
,
N
VJD4152P
TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
350
300
250
200
150
100
50
5
V
= 0 V
V
= 0 V
T =
25
°
C
C
C
DS
GS
J
iss
rss
QT
4
3
2
Q1
Q2
0.8
1
0
I
=
−
0.88 A
C
D
oss
T =
25
°
C
J
0
10
5
0
5
10
15
20
0
0.4
1.2
1.6
2
V
GS
V
DS
Q ,
TOTAL GATE CHARGE (nC)
g
GATE
−
TO
−
SOURCE OR DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
Figure 8. Gate
−
to
−
Source Voltage vs. Total
Gate Charge
Figure 7. Capacitance Variation
100
0.5
0.4
0.3
0.2
V
GS
= 0 V
T =
25
°
C
J
t
t
d(off)
10
t
r
d(on)
V
=
−
10 V
=
−
0.8 A
=
−
4.5 V
DD
0.1
0
t
f
I
D
V
GS
1
1
10
R ,
GATE RESISTANCE (OHMS)
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
†
Marking
TK
Package
Shipping
NTJD4152PT1G
NTJD4152PT2G
NVJD4152PT1G*
SC
−
88
(Pb
−
Free)
TK
3000 /
T
a
pe & Reel
VTK
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
−
Q101 Qualified and PPAP
Capable.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
1
DATE 11 DEC 2012
SCALE 2:1
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
A
3. DIMENSIONS
D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS
D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS
A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS
b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TI
P
.
7. DIMENSION
b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM
MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOO
T
.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN
NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−−
0.043
−−−
0.004
6X
b
B
TOP VIEW
A
−−−
−−−
1.10
A1
0.00
A2
0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1
1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6
6X
0.30
XXXM
G
6X
0.66
G
1
2.50
XXX =
Specific Device Code
M
= Date Code*
G
= Pb
−
Free Package
0.65
(Note: Microdot may be in either location)
PITCH
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 1 OF 2
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1.
EMITTER 2
2. BASE
2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
ANODE 2
2. N/C
PIN 1.
CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1.
ANODE
2. ANODE
3. COLLECTOR
1
4. EMITTER
1
5. BASE
1
3. COLLECTOR
3. CATHODE
1
4. ANODE
1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR
2
6. ANODE
6. CATHODE
6. CATHODE
2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1.
SOURCE 2
2. DRAIN
2
3. GATE
1
PIN 1.
EMITTER 2
2. EMITTER
1
3. COLLECTOR
1
4. BASE
1
PIN 1.
SOURCE 2
2. SOURCE
1
3. GATE
1
PIN 1.
CATHODE 2
2. CATHODE
2
3. ANODE
1
PIN 1.
ANODE 2
2. ANODE
2
3. CATHODE
1
4. ANODE
1
5. ANODE
1
6. CATHODE
2
4. SOURCE
1
5. DRAIN
1
6. GATE
2
4. DRAIN
1
5. DRAIN
2
6. GATE
2
4. CATHODE
1
5. CATHODE
1
6. ANODE
2
5. BASE
2
6. COLLECTOR
2
STYLE 13:
PIN 1.
ANODE
2. N/C
STYLE 14:
PIN 1.
VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1.
VIN1
2. VCC
PIN 1.
ANODE 1
2. ANODE
2
PIN 1.
BASE 1
2. EMITTER
2
3. COLLECTOR
2
4. BASE
2
PIN 1.
BASE 1
2. EMITTER
1
3. COLLECTOR
2
4. BASE
2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE
3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE
3
5. CATHODE
2
6. CATHODE
1
5. EMITTER
1
6. COLLECTOR
1
5. EMITTER
2
6. COLLECTOR
1
6. CATHODE
STYLE 19:
PIN 1.
I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1.
ANODE 1
2. N/C
STYLE 22:
PIN 1.
D1 (i)
2. GND
STYLE 23:
PIN 1.
Vn
2. CH1
3. Vp
STYLE 24:
PIN 1.
CATHODE
2. ANODE
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE
2
4. CATHODE
2
5. N/C
3. D2
(i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V
CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2
(c)
5. VBUS
6. D1
(c)
4. N/C
5. V
EN
5. CH2
6. N/C
6. V
REF
6. CATHODE
1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1.
SOURCE 1
2. GATE
1
STYLE 27:
PIN 1.
BASE 2
2. BASE
1
STYLE 28:
PIN 1.
DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1.
ANODE
2. ANODE
PIN 1.
SOURCE 1
2. DRAIN
2
3. DRAIN
2
4. SOURCE
2
5. GATE
1
PIN 1.
BASE 1
2. CATHODE
3. COLLECTOR
2
4. BASE
2
3. DRAIN
2
4. SOURCE
2
5. GATE
2
3. COLLECTOR
1
4. EMITTER
1
5. EMITTER
2
6. COLLECTOR
2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR
1
6. DRAIN
1
6. DRAIN
1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 2 OF 2
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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