onsemi-NTJS3157NT1G
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NTJS3157N
N-Channel,
T
rench, SC-88
20
V
,
4
.0 A
Features
•
Leading Trench Technology for Low R
•
Fast Switching for Increased Circuit Efficiency
•
SC
−
88 Small Outline (2 x 2 mm) for Maximum Circuit Board
Utilization, Same as SC
−
70
−
6
Extending Battery Life
DS(ON)
V
R
Typ
I Max
D
(BR)DSS
DS(on)
45 m
W
@ 4.5 V
55 m
W
@ 2.5 V
70 m
W
@ 1.8 V
4.0 A
20 V
•
These are Pb
−
Free Devices
Applications
SC
−
88 (SOT
−
363)
•
DC
−
DC Conversion
•
Low Side Load Switch
•
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
D
D
G
1
6
5
4
D
D
S
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
2
3
Parameter
Drain
−
to
−
Source Voltage
Symbol Value
Unit
V
V
20
8.0
3.2
2.3
4.0
1.0
DSS
Gate
−
to
−
Source Voltage
V
V
GS
Continuous Drain
T =
25
°
C
I
D
A
A
Steady
State
T
o
p View
T =
85
°
C
A
t
≤
5 s
T =
25
°
C
A
MARKING DIAGRAM &
PIN ASSIGNMENT
Power Dissipation
Steady
State
P
W
D
T =
25
°
C
A
D
D
S
Pulsed Drain Current
t =
10
m
s
p
I
10
A
DM
6
1
Operating Junction and Storage
T
e
mperature
T ,
STG
−
55 to
150
°
C
J
T92 M
G
T
SOT
−
363
CASE 419B
STYLE 28
G
Source Current (Body Diode)
I
S
1.6
A
1
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 s)
260
°
C
T
L
D
D
G
T92
M
G
= Device Code
= Date Code
= Pb
−
Free Package
Parameter
Symbol
Max
125
80
Unit
Junction
−
to
−
Ambient – Steady State
Junction
−
to
−
Ambient
−
t
≤
5 s
Junction
−
to
−
Lead – Steady State
R
°
C/W
q
JA
(Note: Microdot may be in either location)
R
q
JA
ORDERING INFORMATION
See detailed ordering and shipping information in the package
R
45
q
JL
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
May, 2019
−
Rev. 3
NTJS3157N/D
NTJS3157N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
V
= 0
V
, I
= 250
m
A
20
V
(BR)DSS
GS
D
Drain
−
to
−
Source Breakdown Voltage
V
/T
12
mV/
°
C
(BR)DSS
J
= 0
V
, I
= 250
m
A
GS
D
T
e
mperature Coefficient
Zero Gate Voltage Drain Current
I
T =
25
°
C
1.0
5.0
100
m
A
DSS
J
V
= 0
V
,
GS
DS
V
= 16 V
T =
85
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
8.0 V
nA
GSS
DS
GS
V
0.40
1.0
V
GS(TH)
V
GS
= V
, I
= 250
m
A
DS D
Negative Threshold
T
e
mperature
Coefficient
V
/T
−
4.0
mV/
°
C
GS(TH)
J
Drain
−
to
−
Source On Resistance
R
V
= 4.5 V, I
= 4.0 A
45
55
70
9.0
60
70
85
m
W
DS(on)
GS
GS
GS
D
V
= 2.5 V, I
= 3.6 A
D
V
= 1.8 V, I
= 2.0 A
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 10 V, I
= 3.2 A
S
GS
D
C
500
75
pF
ISS
V
GS
= 0
V
, f =
1
.0 MHz,
Output Capacitance
C
OSS
RSS
V
DS
= 10 V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
60
Q
6.9
1.0
1.8
15
nC
ns
G(TOT)
V
V
= 4.5 V, V
= 10 V,
DS
GS
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
Q
GS
I
D
= 3.2 A
GD
Turn
−
On Delay Time
Rise Time
t
6.0
12
21
11
15
25
45
25
d(on)
t
r
= 4.5 V, V
= 10 V,
GS
DD
I
D
= 0.5 A, R
= 6.0
W
G
Turn
−
Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
S
=0
V
,
T =
25
°
C
J
0.7
1.0
V
GS
I =
1.6 A
Reverse Recovery Time
Charge Time
t
15
12
ns
RR
T
a
V
GS
= 0
V
, dI
/dt = 100 A/
m
s,
S
I =
1.6 A
S
Discharge Time
T
3.0
5.0
b
Reverse Recovery Charge
Q
nC
RR
2. Pulse
T
e
st: pulse width
≤
300
m
s, duty cycle
≤
2%.
3. Switching
characteristics are independent of operating junction temperatures.
2
NTJS3157N
TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
10
8
12
V
DS
≥
10 V
V
GS
= 1.8 V
1.6 V
8 V
4 V
2 V
10
8
T =
25
°
C
J
6
6
1.4 V
4
4
1.2 V
1 V
25
°
C
2
0
0.8 V
T =
−
55
°
C
J
2
0
T =
125
°
C
J
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.25
0.2
0.1
0.09
0.08
0.07
0.06
0.05
T =
25
°
C
J
I
= 4 A
D
T =
25
°
C
J
0.15
0.1
V
GS
= 1.8 V
V
V
= 2.5 V
= 4.5 V
GS
0.05
0
0.04
0.03
GS
1
3
5
7
1
2
3
4
5
6
7
8
9
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On
−
Resistance vs. Drain Current and
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Gate Voltage
Voltage
1.8
10000
1000
100
I
V
= 4.0 A
V
GS
= 0 V
D
= 4.5 V
GS
1.6
1.4
1.2
1
T =
150
°
C
J
T =
100
°
C
J
0.8
0.6
−
50
−
25
0
25
50
75
100
125 150
2
4
6
8
10
12
14
16
18
20
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTJS3157N
TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
1400
1200
1000
800
5
10
8
V
= 0 V
V
GS
= 0 V
DS
T =
25
°
C
Q
G(TOT)
J
C
iss
4
3
2
V
DS
V
GS
6
4
Q
Q
GD
600
GS
C
iss
C
rss
400
1
0
2
0
I
= 3.2 A
200
0
D
C
oss
T =
25
°
C
J
C
rss
8
4
0
4
8
12
16
20
0
1
2
3
4
5
6
7
8
V
GS
V
DS
Q ,
TOTAL GATE CHARGE (nC)
g
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
GATE
−
TO
−
SOURCE OR DRAIN
−
TO
−
SOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
6
5
4
3
2
100
t
d(off)
V
= 10 V
= 0.5 A
= 4.5 V
V
= 0 V
DS
GS
t
t
f
I
D
T =
25
°
C
J
V
GS
r
10
t
d(on)
1
0
1
1
10
R ,
GATE RESISTANCE (OHMS)
100
0.2
0.3
0.4
, SOURCE
−
TO
−
DRAIN VOLTAGE (VOLTS)
SD
0.5
0.6
0.7
0.8
0.9
1
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
4
NTJS3157N
ORDERING INFORMATION
Device
†
Package
Shipping
NTJS3157NT1G
SC
−
88
(Pb
−
Free)
3000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
NTJS3157NT2G
SC
−
88
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
1
DATE 11 DEC 2012
SCALE 2:1
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
A
3. DIMENSIONS
D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS
D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS
A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS
b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TI
P
.
7. DIMENSION
b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM
MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOO
T
.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN
NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−−
0.043
−−−
0.004
6X
b
B
TOP VIEW
A
−−−
−−−
1.10
A1
0.00
A2
0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1
1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6
6X
0.30
XXXM
G
6X
0.66
G
1
2.50
XXX =
Specific Device Code
M
= Date Code*
G
= Pb
−
Free Package
0.65
(Note: Microdot may be in either location)
PITCH
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1.
EMITTER 2
2. BASE
2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
ANODE 2
2. N/C
PIN 1.
CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1.
ANODE
2. ANODE
3. COLLECTOR
1
4. EMITTER
1
5. BASE
1
3. COLLECTOR
3. CATHODE
1
4. ANODE
1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR
2
6. ANODE
6. CATHODE
6. CATHODE
2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1.
SOURCE 2
2. DRAIN
2
3. GATE
1
PIN 1.
EMITTER 2
2. EMITTER
1
3. COLLECTOR
1
4. BASE
1
PIN 1.
SOURCE 2
2. SOURCE
1
3. GATE
1
PIN 1.
CATHODE 2
2. CATHODE
2
3. ANODE
1
PIN 1.
ANODE 2
2. ANODE
2
3. CATHODE
1
4. ANODE
1
5. ANODE
1
6. CATHODE
2
4. SOURCE
1
5. DRAIN
1
6. GATE
2
4. DRAIN
1
5. DRAIN
2
6. GATE
2
4. CATHODE
1
5. CATHODE
1
6. ANODE
2
5. BASE
2
6. COLLECTOR
2
STYLE 13:
PIN 1.
ANODE
2. N/C
STYLE 14:
PIN 1.
VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1.
VIN1
2. VCC
PIN 1.
ANODE 1
2. ANODE
2
PIN 1.
BASE 1
2. EMITTER
2
3. COLLECTOR
2
4. BASE
2
PIN 1.
BASE 1
2. EMITTER
1
3. COLLECTOR
2
4. BASE
2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE
3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE
3
5. CATHODE
2
6. CATHODE
1
5. EMITTER
1
6. COLLECTOR
1
5. EMITTER
2
6. COLLECTOR
1
6. CATHODE
STYLE 19:
PIN 1.
I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1.
ANODE 1
2. N/C
STYLE 22:
PIN 1.
D1 (i)
2. GND
STYLE 23:
PIN 1.
Vn
2. CH1
3. Vp
STYLE 24:
PIN 1.
CATHODE
2. ANODE
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE
2
4. CATHODE
2
5. N/C
3. D2
(i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V
CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2
(c)
5. VBUS
6. D1
(c)
4. N/C
5. V
EN
5. CH2
6. N/C
6. V
REF
6. CATHODE
1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1.
SOURCE 1
2. GATE
1
STYLE 27:
PIN 1.
BASE 2
2. BASE
1
STYLE 28:
PIN 1.
DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1.
ANODE
2. ANODE
PIN 1.
SOURCE 1
2. DRAIN
2
3. DRAIN
2
4. SOURCE
2
5. GATE
1
PIN 1.
BASE 1
2. CATHODE
3. COLLECTOR
2
4. BASE
2
3. DRAIN
2
4. SOURCE
2
5. GATE
2
3. COLLECTOR
1
4. EMITTER
1
5. EMITTER
2
6. COLLECTOR
2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR
1
6. DRAIN
1
6. DRAIN
1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
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TECHNICAL SUPPORT
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