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” or its affiliates and/or
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makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
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assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using
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products, including compliance with all laws,
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onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hol
d
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onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
N-Channel, DUAL SO8FL
60
V
,
1
6.3 m
W
, 32 A
NTMFD016N06C
Features
•
Small Footprint (5×6 mm) for Compact Design
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low Q
and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
60 V
16.3 m
W
@ 10 V
32 A
Typical Applications
•
Power Tools, Battery Operated
V
a
cuums
•
U
A
V
/Drones, Material Handling
•
BMS/Storage, Home Automation
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Symbol Value Units
V
60
20
32
V
V
A
DSS
V
GS
Continuous Drain
Current R
Steady
State
T
T
= 25
°
C
I
D
C
MARKING
DIAGRAM
q
JC
= 100
°
C
23
C
1
Power Dissipation
Steady
State
T
T
= 25
°
C
P
36
18
9
W
A
C
D
D
R
q
JC
DFN8 5×6
(SO8FL)
CASE 506BT
= 100
°
C
16DN6C
AYWZZ
C
Continuous Drain
Current R
Steady
State
T =
25
°
C
A
I
D
q
JA
T =
100
°
C
A
6
16DN6
C
=
S
pecific Device Code
Power Dissipation
Steady
State
T =
25
°
C
A
P
3.1
1.5
W
R
A
Y
= Assembly Location
=
Y
e
ar
q
JA
T =
100
°
C
A
Pulsed Drain
Current
T =
25
°
C, t
= 10
m
s
I
DM
128
A
W
ZZ
= Work Week
= Lot Traceability
A
p
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
°
C
J
stg
+175
ORDERING INFORMATION
Source Current (Body Diode)
I
S
30
21
A
†
Device
Package
Shipping
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
Energy (I
= 6.4 A
)
L
pk
NTMFD016N06CT1G SO8FL
Dual
(Pb-Free)
1500 /
Lead
T
e
mperature Soldering Reflow for
Soldering Purposes (1/8
″
from case for 10 s)
T
L
260
°
C
T
a
pe & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface
−
mounted on FR4 board using a 650 mm
, 2 oz Cu pad.
2
3. Maximum
current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2020
−
Rev. 0
NTMFD016N06C/D
NTMFD016N06C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
4.1
Unit
R
q
JC
°
C/W
R
47.3
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
60
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
I
D
= 250
m
A, ref to 25
°
C
29
mV/
°
C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
T =
25
°
C
10
m
A
DSS
GS
DS
J
V
= 60 V
T =
125
°
C
J
250
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
DS
= 0
V
, V
=
2
0 V
nA
GSS
GS
V
V
GS
= V
, I
= 25
m
A
2.0
4.0
V
GS(TH)
DS
D
Negative Threshold
T
e
mperature
Coefficient
V
/ T
J
I =
25
m
A, ref to 25
°
C
D
−
8.2
mV/
°
C
GS(TH)
Drain
−
to
−
Source On Resistance
Forward Transconductance
Gate Resistance
R
V
= 10
V
, I
= 5 A
13.6
15
16.3
m
W
S
DS(on)
GS
D
g
FS
V
= 5
V
, I
= 5 A
DS D
R
T =
25
°
C
A
1.4
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
V
= 0
V
, f = 1
M
Hz, V
= 30 V
489
319
5.7
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
Q
V
= 10
V
, V
=
3
0
V
, I
= 5 A
6.9
G(TOT)
GS
DS
D
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
1.6
G(TH)
Q
2.6
GS
Q
0.62
GD
GS
Turn
−
On Delay Time
Rise Time
t
V
GS
I
= 10
V
, V
=
3
0
V
,
7.2
1.7
ns
d(ON)
DS
= 5 A, R
= 6
W
D
G
t
r
Turn
−
Off Delay Time
Fall Time
t
11.1
2.7
d(OFF)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0
V
,
= 5 A
T =
25
°
C
0.81
0.67
27
1.2
V
SD
GS
S
J
I
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
V
= 0
V
, d
/
d =
100 A/
m
s,
V
ns
RR
GS
IS
t
= 30
V
, I
= 5 A
DS
S
ta
13
Discharge Time
tb
14
Reverse Recovery Charge
Q
15
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: pulse width
≤
300
m
s, duty cycle
≤
2%.
5. Switching
characteristics are independent of operating junction temperatures.
2
NTMFD016N06C
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
40
V
GS
= 10 V to 7 V
6.0 V
35
30
25
20
15
10
5.0 V
4.5 V
T =
−
55
°
C
J
T =
25
°
C
J
10
0
5
0
T =
125
°
C
3.6 V
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
5.0
V
DS
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
20
19
18
17
16
15
14
18
17
16
15
14
13
12
T =
25
°
C
J
T =
25
°
C
D
J
I
= 5 A
V
GS
= 10 V
13
12
11
10
6.0 6.5
7.0
7.5
8.0
8.5
9.0
9.5
10
5
10
15
20
25
30
35
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
1.5
1.0
100K
10K
1K
V
I
= 10 V
= 5 A
GS
T =
175
°
C
J
D
T =
150
°
C
J
T =
125
°
C
J
100
10
T =
85
°
C
J
T =
25
°
C
0.5
0
J
1
0.1
−
50
−
25
0
25
50
75 100
125 150 175
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (
°
C)
J
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTMFD016N06C
TYPICAL CHARACTERISTICS
1E+04
1E+03
1E+02
10
9
8
C
C
ISS
7
6
5
4
3
2
OSS
Q
Q
GD
GS
1E+01
1E+00
V
DS
= 30 V
V
= 0 V
GS
C
RSS
I
D
= 5 A
T =
25
°
C
J
1
0
T =
25
°
C
J
f = 1 MHz
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
100
10
V
= 10 V
= 30 V
GS
V
GS
= 0 V
V
DS
I
D
= 5 A
t
t
d(off)
d(on)
10
1
t
f
t
r
T =
−
55
°
C
T =
125
°
C
T =
25
°
C
J
J
J
1
0.1
1
10
R ,
GATE RESISTANCE (
W
)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
100
10
10
m
s
T
= 25
°
C
J(initial)
10
100
m
s
T =
25
°
C
A
Single Pulse
V
GS
≤
10 V
1
1 ms
T
= 100
°
C
J(initial)
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms
& 1 sec
10 ms
100
0.1
1
1
10
, DRAIN
−
SOURCE VOLTAGE (V)
1E
−
06
1E
−
05
1E
−
04
1E
−
03
1E
−
02
V
DS
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
4
NTMFD016N06C
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 13. Thermal Characteristics
5
NTMFD016N06C
PACKAGE DIMENSIONS
DFN8 5×6, 1.27P Dual Flag (SO8FL
−
Dual)
CASE 506BT
ISSUE E
2X
NOTES:
0.20
C
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. DIMENSION
b APPLIES TO PLATED TERMINAL AND IS MEASURED
BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TI
P
.
4. PROFILE
TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL
AS THE TERMINALS.
5. DIMENSIONS
D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
A
B
E
2X
D1
0.20
C
8
7
6
5
6. SEATING
PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BOD
Y
.
7. A
VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA.
PIN ONE
IDENTIFIER
E1
4X
h
MILLIMETERS
DIM
A
A1
b
b1
c
MIN
0.90
−−−
0.33
0.33
0.20
MAX
−−−
−−−
0.42
0.42
MAX
1.10
0.05
0.51
0.51
0.33
NOTE 7
c
A1
1
2
3
4
−−−
TOP VIEW
D
5.15 BSC
4.90
4.10
1.70
6.15 BSC
5.90
4.15
1.27 BSC
0.55
−−−
−−−
−−−
0.61
3.50
2.00
D1
D2
D3
E
E1
E2
e
G
h
K
K1
L
4.70
3.90
1.50
5.10
4.30
1.90
0.10
0.10
C
DETAIL A
A
5.70
3.90
6.10
4.40
C
SEATING
PLANE
NOTE 6
C
NOTE 4
SIDE VIEW
DETAIL A
0.45
−−−
0.51
0.56
0.48
3.25
1.80
0.65
12
−−−
−−−
_
D2
D3
0.71
3.75
2.20
4X
L
K
M
N
e
1
4
DETAIL B
ALTERNATE
DETAIL B
CONSTRUCTION
4X
b1
N
SOLDERING FOOTPRINT*
E2
M
4.56
2X
2.08
2X
0.56
8X
0.75
8
5
4X
G
b
8X
0.10
0.05
C
C
A B
K1
NOTE 3
BOTTOM VIEW
4X
1.40
6.59
4.84
2.30
3.70
0.70
4X
1.27
1.00
PITCH
5.55
DIMENSION: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
6
NTMFD016N06C
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
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