onsemi-NTMFS015N15MC
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MOSFET
– N-Channel
Shielded Gate PowerTrench
[
150
V
,
1
4 m
W
, 61 A
NTMFS015N15MC
Features
•
Small Footprint (5 x 6 mm) for Compact Design
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low QG and Capacitance to Minimize Driver Losses
•
100% UIL Tested
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
150 V
14 m
W
@ 10 V
61 A
D
Typical Applications
•
Synchronous Rectification
•
AC
−
DC and DC
−
DC Power Supplies
•
AC
−
DC Adapters (USB PD) SR
•
Load Switch
G
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
S
J
N
−
CHANNEL MOSFET
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
150
20
Unit
V
V
DSS
Gate
−
to
−
Source Voltage
V
GS
V
Continuous Drain
I
61
A
D
Current R
q
JC
Steady
State
T
= 25
°
C
Pin 1
C
Power Dissipation
P
108.7
9.2
W
A
D
T
o
p
Bottom
R
q
JC
Power 56
(PQFN8)
Continuous Drain
Current R
I
D
CASE 483AE
q
JA
Steady
State
T =
25
°
C
A
Power Dissipation
P
2.5
W
D
MARKING DIAGRAM
R
q
JA
S
D
D
Pulsed Drain Current
T
= 25
°
C, t
= 100
m
s
I
DM
302
A
C
p
S
S
G
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+150
°
C
J
stg
1515MC
AYWZZ
D
D
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
150
mJ
Energy (I
= 10 A
, L = 3 mH)
L
pk
1515MC = Specific Device Code
Lead
T
e
mperature for Soldering Purposes
T
260
°
C
L
A
Y
= Assembly Location
=
Y
e
ar
(1/8
″
from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
W
ZZ
= Work Week
= Lot Traceability
2
1. Surface
−
mounted on FR4 board using a 1 in
, 2 oz. Cu pad.
2. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
ORDERING INFORMATION
†
Device
Package
Power 56
3000 /
T
a
pe
(PQFN8) &
Reel
Shipping
NTMFS015N15MC
(Pb
−
Free/Halogen Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
May, 2020
−
Rev. 1
NTMFS015N15MC/D
NTMFS015N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.15
50
Unit
R
°
C/W
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
150
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
I
D
= 250
m
A, ref to 25
°
C
109
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0
V
,
T =
25
°
C
1.0
DSS
GSS
GS
J
m
A
V
= 120 V
Gate
−
to
−
Source Leakage Current
ON CHARACTERISTICS
I
V
= 0
V
, V
=
20 V
100
nA
DS
GS
Gate Threshold Voltage
V
V
= V
, I
= 162
m
A
2.5
4.5
V
mV/
°
C
m
W
m
W
S
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
Drain
−
to
−
Source On Resistance
Forward Transconductance
V
/T
I =
162
m
A, ref to 25
°
C
D
−
7.6
10.2
11.1
56
GS(TH)
J
R
R
V
= 10
V
, I
=
2
9 A
14
DS(on)
DS(on)
GS
D
V
= 8
V
, I
=
1
5 A
16.2
GS
D
g
FS
V
= 10
V
, I
=
2
9 A
D
DS
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
2120
595
10.5
0.6
27
ISS
Output Capacitance
C
V
GS
= 0
V
, f = 1
M
Hz, V
= 75 V
pF
OSS
RSS
DS
Reverse Transfer Capacitance
Gate
−
Resistance
C
R
1.2
W
G
T
o
tal Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
7
G(TH)
nC
Q
11
V
GS
= 10
V
, V
=
7
5 V; I
= 29 A
GS
GD
GP
DS
D
Q
V
4
5.5
66
V
Output Charge
Q
V
DD
= 75
V
, V
= 0 V
nC
OSS
GS
Turn
−
On Delay Time
Rise Time
t
16
5
d(ON)
t
r
V
= 10
V
, V
=
7
5
V
,
DD
GS
D
ns
I
= 29 A, R
= 6
W
G
Turn
−
Off Delay Time
Fall Time
t
21
4
d(OFF)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
S
= 0
V
,
T =
25
°
C
J
0.86
1.2
GS
V
I
= 29 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
t
49
197
34
ns
RR
V
S
= 0
V
, V
=
7
5 V
DD
GS
dI /dt
= 300 A/
m
s, I
= 29 A
S
Q
nC
ns
RR
RR
t
RR
V
GS
= 0
V
, V
=
7
5 V
DD
dI /dt
= 1000 A/
m
s, I
= 29 A
S
S
Q
345
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
NTMFS015N15MC
NOTES:
3. Switching
characteristics are independent of operating junction temperatures.
2
4. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5
×
1.5 in. board of FR
−
4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 50
°
C/W when mounted on
b) 125
°
C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in
pad of 2 oz copper.
3
NTMFS015N15MC
TYPICAL CHARACTERISTICS
6
160
120
80
8.0 V
V
= 6.0 V
10 V
5.5 V
GS
7.0 V
5
Pulse Duration = 250
m
s
Duty Cycle = 0.5% Max
4
7 V
3
2
6.0 V
8 V
V
= 5.5 V
GS
40
0
10 V
1
0
0
1
2
3
4
5
6
7
8
9
10
0
4
0
40
80
120
160
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
DS
D
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
80
60
40
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
V
= 29 A
D
I
D
= 29 A
= 10 V
GS
T =
125
°
C
J
20
0
0.8
0.6
T =
25
°
C
J
−
75
−
50
−
25
0
25
50
75
100 125 150
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (
°
C)
J
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 3. Normalized On
−
Resistance vs.
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Junction Temperature
Voltage
160
120
80
200
100
V
= 10 V
V
= 0 V
DS
GS
10
1
T =
25
°
C
J
0.1
40
0
0.01
T =
150
°
C
J
T =
150
°
C
J
T =
−
55
°
C
J
T =
25
°
C
J
T =
−
55
°
C
J
0.001
2
3
4
5
6
7
8
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source
−
to
−
Drain Diode Forward
Voltage vs. Source Current
4
NTMFS015N15MC
TYPICAL CHARACTERISTICS
10
8
10K
V
DD
= 25 V
I
D
= 29 A
C
ISS
V
DD
= 75 V
V
DD
= 50 V
1K
C
OSS
6
100
4
C
RSS
10
1
2
0
f = 1 MHz
= 0 V
V
GS
0
6
12
18
24
30
0.1
1
10
100 150
Q ,
GATE CHARGE (nC)
g
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
−
to
−
Source
Voltage
100K
10K
1K
70
60
50
40
30
20
V
= 10 V
GS
V
= 8 V
GS
100
10
10
0
R
= 1.15
°
C/W
q
JC
25
50
75
100
125
150
0.00001 0.0001
0.001
0.01
0.1
1
T ,
CASE TEMPERATURE (
°
C)
C
t, PULSE WIDTH (s)
Figure 9. Drain Current vs. Case Temperature
Figure 10. Peak Power
100
1000
100
10
T
= 25
°
C
C
Single Pulse
= 1.15
°
C/W
R
q
JC
10
m
s
100
m
s
T
= 25
°
C
J(initial)
10
T
= 100
°
C
J(initial)
1 ms
T
= 150
°
C
J(initial)
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms/DC
100 200
1
0.1
0.001
0.01
0.1
1
10
100
0.1
1
10
t ,
TIME IN AVALANCHE (mS)
AV
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 11. Unclamped Inductive Switching
Capability
Figure 12. Forward Bias Safe Operating Area
5
NTMFS015N15MC
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Notes:
= 1.15
°
C/W
P
DM
R
0.01
q
JC
0.01
Peak T
= P
Duty Cycle, D = t
/t
x Z
(t) + T
JC C
q
J
DM
Single Pulse
t
1
1
2
t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE B
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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