onsemi-NTMFS4925NT3G
| Part # | onsemi-NTMFS4925NT3G |
Download  | onsemi-NTMFS4925NT3G |
NTMFS4925N
N-Channel, SO-8 FL
30
V
,
4
8 A
Features
•
Low R
to Minimize Conduction Losses
•
Low Capacitance to Minimize Driver Losses
DS(on)
•
Optimized Gate Charge to Minimize Switching Losses
•
Optimized for 5
V
,
1
2 V Gate Drives
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
5.6 m
W
@ 10 V
8.5 m
W
@ 4.5 V
30 V
48 A
Applications
D (5,6)
•
CPU Power Delivery
•
DC
−
DC Converters
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
G (4)
Parameter
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Symbol
Value
30
Unit
V
V
DSS
S (1,2,3)
N
−
CHANNEL MOSFET
V
GS
20
V
Continuous Drain
Current R
T =
25
°
C
I
16.7
A
A
D
q
JA
T =
100
°
C
A
10.5
2.70
MARKING
DIAGRAM
Power Dissipation
T =
25
°
C
A
P
W
A
D
D
D
D
R
q
JA
D
Continuous Drain
T =
25
°
C
A
I
D
25.2
15.9
6.16
1
S
S
S
G
D
D
Current R
≤
10 s
q
JA
4925N
AYWZZ
T =
100
°
C
A
SO
−
8 FLAT LEAD
CASE 488AA
STYLE 1
Power Dissipation
T =
25
°
C
A
P
W
A
R
q
JA
Steady
State
D
Continuous Drain
Current R
T =
25
°
C
A
I
D
9.7
6.2
q
JA
A
Y
W
ZZ
= Assembly Location
=
Y
e
ar
= Work Week
= Lot Traceability
T =
100
°
C
A
Power Dissipation
T =
25
°
C
A
P
0.92
W
A
R
q
JA
Continuous Drain
Current R
T
= 25
°
C
=100
°
C
= 25
°
C
I
D
48
30
C
q
JC
T
C
Power Dissipation
T
C
P
23.2
W
A
ORDERING INFORMATION
R
q
JC
†
Pulsed Drain
Current
T =
25
°
C, t
= 10
m
s,
I
DM
210
100
Device
Package
Shipping
A
p
V
= 10 V
GS
NTMFS4925NT1G
SO
−
8 FL
1500 /
Current Limited by Package
T =
25
°
C
A
I
A
Dmax
(Pb
−
Free)
T
a
pe & Reel
Operating Junction and Storage
T
e
mperature
T ,
STG
−
55 to
°
C
J
NTMFS4925NT3G
SO
−
8 FL
(Pb
−
Free)
5000 /
T
a
pe & Reel
T
+150
Source Current (Body Diode)
Drain to Source DV/DT
I
S
21
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
dV/d
6.0
V/ns
t
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
May, 2019
−
Rev. 6
NTMFS4925N/D
NTMFS4925N
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Symbol
Value
Unit
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
34
mJ
Energy (T
= 25
°
C, V
= 24
V
, V
=
2
0
V
,
J
DD
GS
I =
26 A
, L = 0.1 mH, R
= 25
W
)
L
pk
G
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 1 oz Cu.
2. Surface
−
mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
5.4
Unit
Junction
−
to
−
Case (Drain)
R
q
JC
R
46.3
136.2
20.3
q
JA
°
C/W
R
q
JA
R
q
JA
3. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 1 oz Cu.
4. Surface
−
mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain
−
to
−
Source Breakdown Voltage
V
V
= 0
V
, I
=
2
50
m
A
30
34
V
V
(BR)DSS
GS
D
Drain
−
to
−
Source Breakdown Voltage
(transient)
V
V
= 0
V
, I
= 11.0 A,
= 100 ns
(BR)DSSt
GS
case
D(aval)
T
= 25
°
C, t
transient
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
21
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
= 24 V
T =
25
°
C
1.0
10
DSS
GS
DS
J
V
m
A
T =
125
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V
, I
= 250
m
A
1.32
1.7
3.9
4.5
4.5
6.8
6.7
52
2.2
5.6
8.5
V
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
V
/T
J
V
= 0
V
, V
=
1
5 V
mV/
°
C
GS(TH)
GS
DS
R
V
= 10 V
= 4.5 V
I
D
I
D
I
D
I
D
= 30 A
= 15 A
= 30 A
= 15 A
DS(on)
GS
GS
m
W
V
Forward Transconductance
g
FS
V
= 1.5
V
, I
=
1
5 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
1264
483
ISS
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
C
V
= 0
V
, f = 1
M
Hz, V
= 15 V
pF
OSS
RSS
GS
DS
C
143
C
/
V
GS
= 0
V
, f = 1
M
Hz, V
= 15 V
0.113
0.226
RSS
ISS
DS
C
6.
Switching characteristics are independent of operating junction temperatures.
2
NTMFS4925N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
T
o
tal Gate Charge
Q
10.8
2.0
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
T
o
tal Gate Charge
Q
G(TH)
V
= 4.5
V
, V
=
1
5 V; I
= 30 A
nC
nC
GS
DS
D
Q
3.8
GS
GD
Q
4.2
Q
V
= 10
V
, V
=
1
5 V; I
= 30 A
21.5
G(TOT)
GS
DS
D
Turn
−
On Delay Time
Rise Time
t
9.5
32.7
16.4
6.2
d(ON)
t
r
V
= 4.5
V
, V
=
1
5
V
,
DS
GS
D
ns
ns
V
I
= 15 A, R
= 3.0
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
Turn
−
On Delay Time
Rise Time
t
7.4
d(ON)
t
r
27.5
20.3
4.1
V
= 10
V
, V
=
1
5
V
,
DS
GS
I
D
= 15 A, R
= 3.0
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T =
25
°
C
0.86
0.75
25.8
12.4
13.4
13.6
1.1
J
V
S
= 0
V
,
= 30 A
GS
I
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
ns
V
= 0
V
,
d
IS/dt = 100 A/
m
s,
GS
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
nC
RR
L
L
1.00
0.005
1.84
0.8
nH
nH
nH
W
S
D
G
T =
25
°
C
A
Gate Inductance
L
Gate Resistance
R
2.2
G
5. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
6. Switching
characteristics are independent of operating junction temperatures.
3
NTMFS4925N
TYPICAL CHARACTERISTICS
120
110
120
10 V
4.5 V
T =
25
°
C
J
T =
−
55
°
C
J
110
100
90
80
70
60
50
40
30
20
4.0 V
3.5 V
100
90
80
70
60
50
40
30
20
T =
25
°
C
T =
125
°
C
J
J
V
DS
= 10 V
3.0 V
V
= 2.5 V
10
0
10
0
GS
0
1
2
3
4
5
1
2
3
4
5
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.011
0.010
0.009
0.008
0.007
0.006
0.005
I
D
= 30 A
T = 25
°
C
V
V
= 4.5 V
= 10 V
GS
GS
0.004
0.003
0.002
0
3
4
5
6
7
8
9
10
10 20
30 40 50 60 70 80 90
100 110 120
V
GS
(V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. V
GS
Figure 4. On
−
Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
10,000
1,000
I
V
= 30 A
D
T =
150
°
C
J
= 10 V
GS
T =
125
°
C
J
100
10
T =
85
°
C
J
0.7
0.6
−
50
−
25
V
GS
= 0 V
25
0
25
50
75
100 125
150
5
10
15
20
30
T , JUNCTION TEMPERATURE (
°
C)
J
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
4
NTMFS4925N
TYPICAL CHARACTERISTICS
1600
1400
1200
1000
800
11
QT
10
9
T =
25
°
C
GS
J
V
C
iss
= 0 V
8
7
6
C
C
oss
5
Qgs
Qgd
600
T =
25
°
C
J
4
3
400
V
V
= 10 V
= 15 V
= 30 A
GS
2
rss
DD
200
0
1
0
I
D
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20 22
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
1000
100
30
25
20
15
10
V
GS
= 0 V
V
= 10 V
= 15 V
= 15 A
GS
V
DD
t
t
d(off)
I
D
t
f
r
10
1
t
d(on)
T =
125
°
C
T =
25
°
C
J
J
5
0
1
10
R ,
GATE RESISTANCE (
W
)
100
0.3
0.4
0.5
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
40
36
32
28
24
20
16
12
8
1000
100
10
0 V < V
< 10 V
Single Pulse
GS
I
= 26 A
D
T
C
= 25
°
C
10
m
s
100
m
s
1 ms
1
10 ms
R
Limit
DS(on)
0.1
dc
Thermal Limit
Package Limit
4
0
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (
°
C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
5
NTMFS4925N
TYPICAL CHARACTERISTICS
100
10
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
0.01
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 13. Thermal Response
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5×6, 1.27P
(SO
−
8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X
b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. ANODE
2X
0.905
PIN 1.
SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO
CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5×6, 1.27P (SO
−
8FL)
PAGE 1 OF 1
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS
:
For additional information, please contact your local Sales Representative at
