onsemi-NTMFS4931NT3G
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NTMFS4931N
N-Channel, SO-8 FL
30
V
,
2
46 A
Features
•
Low R
to Improve Conduction and Overall Efficiency
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
DS(on)
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Applications
1.1 m
W
@ 10 V
1.5 m
W
@ 4.5 V
30 V
246 A
•
OR
−
ing FET, Power Load Switch, Motor Control
•
Refer to Application Note AND8195/D for Mounting Information
D (5,6)
End Products
•
Motor Control, UPS, Fault
−
Tolerant Power Systems, Hot Swap
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Symbol
Value
30
Unit
V
G (4)
V
DSS
V
GS
20
V
S (1,2,3)
N
−
CHANNEL MOSFET
Continuous Drain
Current R
T =
25
°
C
I
D
40
A
A
q
JA
T =
100
°
C
A
25
MARKING
DIAGRAM
Power Dissipation
T =
25
°
C
A
P
2.74
W
A
D
D
D
D
R
q
JA
D
Continuous Drain
T =
25
°
C
A
I
77
48
D
S
S
S
G
D
D
1
Current R
≤
10 s
q
JA
4931N
AYWZZ
T =
100
°
C
A
SO
−
8 FLAT LEAD
CASE 488AA
STYLE 1
Power Dissipation
T =
25
°
C
A
P
10.2
W
A
R
q
JA
D
Steady
State
Continuous Drain
Current R
T =
25
°
C
A
I
23
15
D
A
Y
W
ZZ
= Assembly Location
=
Y
e
ar
= Work Week
= Lot Traceability
q
JA
T =
100
°
C
A
Power Dissipation
T =
25
°
C
A
P
0.95
W
A
R
q
JA
Continuous Drain
Current R
T
T
= 25
°
C
=100
°
C
= 25
°
C
I
246
156
104
C
D
q
JC
ORDERING INFORMATION
C
†
Device
Package
Shipping
Power Dissipation
T
C
P
W
R
q
JC
NTMFS4931NT1G
SO
−
8 FL
1500 /
(Pb
−
Free)
T
a
pe & Reel
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
490
A
A
p
NTMFS4931NT3G
SO
−
8 FL
(Pb
−
Free)
5000 /
T
a
pe & Reel
Operating Junction and Storage
T
e
mperature
T ,
STG
−
55 to
+150
°
C
J
T
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Source Current (Body Diode)
Drain to Source DV/DT
I
100
4.4
A
S
dV/d
V/ns
t
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
May, 2019
−
Rev. 2
NTMFS4931N/D
NTMFS4931N
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Symbol
Value
Unit
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
252
mJ
Energy (T
= 25
°
C, V
= 24
V
, V
=
1
0
V
,
J
DD
GS
I =
41 A
, L = 0.3 mH, R
= 25
W
)
L
pk
G
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 1 oz Cu.
2. Surface
−
mounted on FR4 board using the minimum recommended pad size.
2
NTMFS4931N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.2
Unit
Junction
−
to
−
Case (Drain)
R
q
JC
R
45.7
132
q
JA
°
C/W
R
q
JA
R
12.3
q
JA
3. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 1 oz Cu.
4. Surface
−
mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
30
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
18
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
= 24 V
T =
25
°
C
1.0
15
DSS
GS
DS
J
V
m
A
T =
125
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
GS
20 V
100
nA
GSS
DS
V
V
= V
, I
= 250
m
A
1.2
1.6
4.0
2.2
1.1
1.5
V
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
V
/T
J
mV/
°
C
GS(TH)
R
V
= 10 V
I
D
I
D
I
D
I
D
= 30 A
= 15 A
= 30 A
= 15 A
0.85
0.82
1.2
DS(on)
GS
GS
m
W
V
= 4.5 V
1.2
Forward Transconductance
g
FS
V
DS
= 1.5
V
, I
=
1
5 A
86
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
9821
2720
234
ISS
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
OSS
C
RSS
V
= 0
V
, f = 1
M
Hz, V
= 15 V
pF
GS
DS
Q
61.5
14.2
25.2
15.9
128
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
T
o
tal Gate Charge
Q
G(TH)
V
GS
= 4.5
V
, V
=
1
5 V; I
= 30 A
nC
nC
DS
D
Q
GS
GD
Q
Q
V
GS
= 10
V
, V
=
1
5 V; I
= 30 A
DS D
G(TOT)
Turn
−
On Delay Time
Rise Time
t
27
29
36
24
d(ON)
t
r
V
= 4.5
V
, V
=
1
5
V
,
DS
GS
D
ns
I
= 15 A, R
= 3.0
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
6.
Switching characteristics are independent of operating junction temperatures.
3
NTMFS4931N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Turn
−
On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
15
17
80
22
d(ON)
Rise Time
t
r
V
= 10
V
, V
=
1
5
V
,
DS
GS
D
ns
I
= 15 A, R
= 3.0
W
G
Turn
−
Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.8
0.62
64
1.0
SD
J
V
S
= 0
V
,
GS
V
I
= 30 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
RR
t
33
ns
a
V
= 0
V
,
d
IS/dt = 100 A/
m
s,
GS
I
S
= 30 A
Discharge Time
t
31
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
100
nC
RR
L
L
0.50
0.005
1.84
0.7
nH
nH
nH
W
S
D
G
T =
25
°
C
A
Gate Inductance
L
Gate Resistance
R
1.8
G
5. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
6. Switching
characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4
NTMFS4931N
TYPICAL CHARACTERISTICS
220
220
200
180
160
140
120
100
80
200
180
160
140
120
100
80
V
DS
= 10 V
V
= 3.4 V
V
GS
= 3.2 V
GS
V
= 3 V
GS
V
GS
= 3.8 V to 10 V
T =
125
°
C
J
V
GS
= 2.8 V
T =
25
°
C
J
60
60
V
V
= 2.6 V
= 2.4 V
GS
40
40
V
GS
= 2.2 V
20
20
T =
−
55
°
C
J
GS
0
0
0
1
2
3
4
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
12
0.0018
0.0017
0.0016
0.0015
0.0014
0.0013
0.0012
0.0011
0.001
0.0009
0.0008
0.0007
0.0006
0.0005
11
10
9
T =
25
°
C
J
I
= 30 A
D
V
GS
= 4.5 V
T =
25
°
C
J
8
7
6
5
V
GS
= 10 V
4
3
2
1
0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0 10
30 40 50 60 70 80 90 100
110 120 130 140 150 160
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
1.6
1.5
1.4
1.3
1.2
1.1
1
100000
10000
1000
100
V
GS
= 0 V
I
V
= 30 A
D
T =
150
°
C
J
= 10 V
GS
T =
125
°
C
J
T =
85
°
C
J
0.9
0.8
0.7
0.6
10
−
50
−
25
0
25
50
75
100
125
150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
5
NTMFS4931N
TYPICAL CHARACTERISTICS
13000
12000
11000
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
10
Q
T
T =
25
°
C
J
T =
25
°
C
9
8
7
6
5
4
3
2
1
0
J
V
GS
= 0 V
C
iss
Q
GD
Q
GS
C
oss
V
V
I
= 15 V
= 10 V
= 30 A
DD
GS
C
rss
D
0
5
10
15
20
25
30
0
10 20 30 40 50 60 70 80 90 100
110 120 130
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
To
−
Source and Drain
−
To
−
Source
Voltage vs. Total Charge
10000
1000
100
10
30
25
20
15
10
5
V
= 15 V
= 15 A
= 10 V
V
GS
= 0 V
DD
I
D
V
GS
t
d(off)
t
f
T =
125
°
C
J
t
r
t
d(on)
T =
25
°
C
J
0
0.3
1
1
10
R ,
GATE RESISTANCE (
W
)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
260
240
220
200
180
160
140
120
100
80
1000
100
10
I
= 41 A
D
100
m
s
1 ms
10 ms
0 V < V
< 10 V
SINGLE PULSE
GS
1
T
C
= 25
°
C
60
40
20
0
0.1
DC
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (
°
C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
6
NTMFS4931N
TYPICAL CHARACTERISTICS
100
10
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
0.01
SINGLE PULSE
0.0001
0.000001
0.00001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 13. Thermal Response
260.00
240.00
220.00
200.00
180.00
160.00
140.00
120.00
100.00
80.00
60.00
40.00
20.00
0.00
0
10 20 30 40 50 60 70 80 90 100
(A)
I
D
Figure 14. GFS vs. I
D
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5×6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X
b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. ANODE
2X
0.905
PIN 1.
SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO
CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
4X
0.750
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5×6, 1.27P (SO−8FL)
PAGE 1 OF 1
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