onsemi-NTMFS4933NT3G
| Part # | onsemi-NTMFS4933NT3G |
Download  | onsemi-NTMFS4933NT3G |
NTMFS4933N
N-Channel, SO-8 FL
30
V
,
2
10 A
Features
•
Low R
to Improve Conduction and Overall Efficiency
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
DS(on)
Compliant
Applications
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
•
OR
−
ing FET, Power Load Switch, Motor Control
1.2 m
W
@ 10 V
2.0 m
W
@ 4.5 V
30 V
210 A
•
Refer to Application Note AND8195/D for Mounting Information
End Products
•
Server, UPS, Fault
−
Tolerant Power Systems, Hot Swap
D (5,6)
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
30
Unit
V
V
DSS
G (4)
Gate
−
to
−
Source Voltage
V
GS
20
V
S (1,2,3)
N
−
CHANNEL MOSFET
Continuous Drain
T =
25
°
C
I
34
A
A
D
Current R
q
JA
T =
100
°
C
A
21.5
2.74
Power Dissipation
T =
25
°
C
A
P
W
A
D
MARKING
DIAGRAM
R
q
JA
Continuous Drain
T =
25
°
C
A
I
D
43
27
D
Current R
≤
10 s
q
JA
T =
100
°
C
A
S
S
S
G
D
D
4933N
AYWZZ
1
Power Dissipation
T =
25
°
C
A
P
7.3
W
A
D
R
q
JA
SO
−
8 FLAT LEAD
CASE 488AA
STYLE 1
Steady
State
Continuous Drain
T =
25
°
C
A
I
D
20
D
q
JA
T =
100
°
C
A
12.5
1.06
A
Y
W
ZZ
= Assembly Location
=
Y
e
ar
= Work Week
= Lot Traceability
Power Dissipation
T =
25
°
C
A
P
W
A
D
R
q
JA
Continuous Drain
Current R
T
T
= 25
°
C
=100
°
C
= 25
°
C
I
D
210
132
104
C
q
JC
C
Power Dissipation
T
C
P
W
D
ORDERING INFORMATION
R
q
JC
†
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
400
A
Device
Package
Shipping
A
p
Operating Junction and Storage
T
e
mperature
T ,
STG
−
55 to
+150
°
C
NTMFS4933NT1G
SO
−
8 FL
(Pb
−
Free)
1500 /
T
a
pe & Reel
J
T
Source Current (Body Diode)
Drain to Source DV/DT
I
95
4.4
504
A
S
NTMFS4933NT3G
SO
−
8 FL
(Pb
−
Free)
5000 /
T
a
pe & Reel
dV/d
V/ns
mJ
t
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
Energy (T
= 25
°
C, V
= 24
V
, V
=
1
0
V
,
J
DD
GS
I =
58 A
, L = 0.3 mH, R
= 25
W
)
L
pk
G
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 1 oz Cu.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
May, 2019
−
Rev. 9
NTMFS4933N/D
NTMFS4933N
2. Surface
−
mounted on FR4 board using the minimum recommended pad size.
2
(Cu area = 50 mm
[1 oz])
2
NTMFS4933N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.1
Unit
Junction
−
to
−
Case (Drain)
R
q
JC
R
45.6
q
JA
°
C/W
R
117.5
17.13
q
JA
R
q
JA
3. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 1 oz Cu.
2
4. Surface
−
mounted on FR4 board using the minimum recommended pad size. (Cu area = 50 mm
[1 oz])
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
30
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
15
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
= 24 V
T =
25
°
C
1.0
10
DSS
GS
DS
J
V
m
A
T =
125
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
GS
20 V
100
nA
GSS
DS
V
V
= V
, I
= 250
m
A
1.2
1.6
4.0
0.9
0.9
1.5
1.5
82
2.2
1.2
2.0
V
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
V
/T
J
mV/
°
C
GS(TH)
R
V
= 10 V
I
D
I
D
I
D
I
D
= 30 A
= 15 A
= 30 A
= 15 A
DS(on)
GS
GS
m
W
V
= 4.5 V
Forward Transconductance
g
FS
V
= 1.5
V
, I
=
1
5 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
10930
3230
92
ISS
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
OSS
C
RSS
V
= 0
V
, f = 1
M
Hz, V
= 15 V
pF
GS
DS
Q
62.1
15.7
27
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
T
o
tal Gate Charge
Q
G(TH)
V
GS
= 4.5
V
, V
=
1
5 V; I
= 30 A
nC
nC
DS
D
Q
GS
GD
Q
10.1
148
Q
V
GS
= 10
V
, V
=
1
5 V; I
= 30 A
DS D
G(TOT)
Turn
−
On Delay Time
Rise Time
t
31
33
47
23
d(ON)
t
r
V
= 4.5
V
, V
=
1
5
V
,
DS
GS
D
ns
I
= 15 A, R
= 3.0
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
6.
Switching characteristics are independent of operating junction temperatures.
3
NTMFS4933N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Turn
−
On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
20
26
d(ON)
Rise Time
t
r
V
= 10
V
, V
=
1
5
V
,
DS
GS
D
ns
I
= 15 A, R
= 3.0
W
G
Turn
−
Off Delay Time
t
88.6
22
d(OFF)
Fall Time
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.82
0.68
73.5
35.9
37.6
117
1.1
SD
J
V
S
= 0
V
,
GS
V
I
= 30 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0
V
,
d
IS/dt = 100 A/
m
s,
GS
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
nC
RR
L
L
0.50
0.005
1.84
1.1
nH
nH
nH
W
S
D
G
T =
25
°
C
A
Gate Inductance
L
Gate Resistance
R
2.2
G
5. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
6. Switching
characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4
NTMFS4933N
TYPICAL CHARACTERISTICS
3.8 V to
10 V
220
200
180
160
140
120
100
80
T =
25
°
C
V
DS
= 10 V
J
200
180
160
140
120
100
80
3.4 V
V
= 3.2 V
3.0 V
GS
2.8 V
2.6 V
T =
125
°
C
J
60
60
T =
25
°
C
J
40
40
T =
−
55
°
C
J
2.4 V
2.2 V
20
20
0
0
0
1
2
3
4
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.0027
0.0025
0.0023
0.0021
0.0019
0.0017
0.0015
0.0013
0.0011
0.0009
0.0007
0.0018
0.0017
0.0016
0.0015
0.0014
0.0013
0.0012
0.0011
0.0010
0.0009
0.0008
T =
25
°
C
I
= 30 A
J
D
T =
25
°
C
J
V
= 4.5 V
GS
V
= 10 V
100
GS
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
20
40
60
80
120
140
160
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
100000
10000
1000
100
V
GS
= 0 V
I
V
= 30 A
D
T =
150
°
C
J
= 10 V
GS
T =
125
°
C
J
T =
85
°
C
J
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
−
50
−
25
0
25
50
75
100
125
150
5
10
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (
°
C)
J
V
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
5
NTMFS4933N
TYPICAL CHARACTERISTICS
13000
12000
11000
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
10
9
C
iss
T =
25
°
C
J
8
7
6
5
4
3
2
1
0
T =
25
°
C
J
Q
T
V
GS
= 0 V
Q
GS
C
C
oss
Q
GD
V
V
I
= 15 V
= 10 V
= 30 A
DD
GS
D
rss
0
5
10
15
20
25
30
0
20
40
60
80
100
120
140
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
To
−
Source and Drain
−
To
−
Source
Voltage vs. Total Charge
30
25
20
15
10
5
10000
1000
100
10
V
GS
= 0 V
V
I
= 15 V
= 15 A
= 10 V
DD
D
V
GS
t
d(off)
T =
125
°
C
J
t
f
t
r
T =
25
°
C
J
t
d(on)
0
0.4
1
1
10
R ,
GATE RESISTANCE (
W
)
100
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
520
480
440
400
360
320
280
240
200
160
1000
100
10
I
= 58 A
D
100
m
s
1 ms
0 V
≤
V
≤
20 V
10 ms
GS
SINGLE PULSE
1
T =
25
°
C
A
T =
150
°
C
J
120
80
40
0
0.1
R
LIMIT
DC
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (
°
C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
6
NTMFS4933N
TYPICAL CHARACTERISTICS
100
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
1
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 13. Thermal Response
260
240
220
200
180
160
140
12
100
80
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100
(A)
I
D
Figure 14. GFS vs. I
D
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5×6, 1.27P
(SO
−
8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X
b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. ANODE
2X
0.905
PIN 1.
SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO
CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5×6, 1.27P (SO
−
8FL)
PAGE 1 OF 1
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and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
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’s product/patent coverage may be accessed at
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−
Marking.pdf
.
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reserves the right to make changes at any time to any
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−
is” and
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onsemi
. “Typical” parameters which may be provided in
onsemi
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
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