onsemi-NTMFS4982NFT3G
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NTMFS4982NF
N-Channel, SO-8 FL
30
V
,
2
07 A
Features
•
Integrated Schottky Diode
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low Capacitance to Minimize Driver Losses
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
•
Optimized Gate Charge to Minimize Switching Losses
1.3 m
W
@ 10 V
1.9 m
W
@ 4.5 V
•
These Devices are Pb
−
Free and are RoHS Compliant
30 V
207 A
Applications
•
Server, Netcom, POL
•
Synchronous Rectification for DC
−
DC Converters
•
Low Side Switching
•
High Performance Applications
N
−
CHANNEL MOSFET
(5, 6)
D
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
G
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value Unit
(4)
V
DSS
30
20
36
V
V
A
Gate
−
to
−
Source Voltage
V
GS
S
(1, 2, 3)
Continuous Drain
Current R
I
D
T =
25
°
C
A
q
JA
T =
85
°
C
A
26
Power Dissipation
MARKING
DIAGRAM
T =
25
°
C
A
P
2.7
W
A
D
D
D
D
R
q
JA
D
Continuous Drain
I
D
T =
25
°
C
A
60
43
S
S
S
G
D
D
1
Current R
10 sec
v
q
JA
4982NF
AYWZZ
T =
85
°
C
A
SO
−
8 FLAT LEAD
CASE 488AA
STYLE 1
Power Dissipation
T =
25
°
C
A
P
I
7.4
W
A
R
t
v
10 sec
q
JA,
Steady
State
D
Continuous Drain
Current R
T =
25
°
C
A
26.5
19
D
A
Y
= Assembly Location
=
Y
e
ar
= Work Week
= Lot Traceability
q
JA
T =
85
°
C
A
Power Dissipation
W
ZZ
T =
25
°
C
A
P
I
1.5
W
A
R
q
JA
Continuous Drain
Current R
T
C
T
C
T
C
= 25
°
C
= 85
°
C
= 25
°
C
207
149
89.3
D
q
JC
Power Dissipation
ORDERING INFORMATION
P
W
R
q
JC
†
Device
Package
Shipping
Pulsed Drain Current
t =10
m
s
T =
25
°
C
I
350
100
A
A
p
A
DM
I
Dmaxpkg
NTMFS4982NFT1G
SO
−
8FL
(Pb
−
Free)
1500 /
Current limited by package
T =
25
°
C
A
T
a
pe & Reel
Operating Junction and Storage
T
e
mperature
T ,
STG
−
55 to
+150
°
C
J
NTMFS4982NFT3G
SO
−
8FL
(Pb
−
Free)
5000 /
T
T
a
pe & Reel
Source Current (Body Diode)
Drain to Source dV/dt
I
54
6
A
S
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
dV/dt
V/ns
*For additional information on our Pb
−
Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
May, 2019
−
Rev. 3
NTMFS4982NF/D
NTMFS4982NF
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Symbol
Value
Unit
Single Pulse Drain
−
to
−
Source Avalanche
EAS
125
mJ
Energy (V
= 50
V
, V
=
1
0
V
, I
=
5
0 A
,
DD
GS
L
pk
L = 0.1 mH, R
= 25
W)
G
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
NTMFS4982NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.4
Unit
Junction
−
to
−
Case (Drain)
R
q
JC
q
JA
q
JA
Junction
−
to
−
Ambient
−
t
v
10 sec
R
R
46.6
84.1
16.8
°
C/W
R
q
JA
1. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 2 oz Cu.
2. Surface
−
mounted on FR4 board using the minimum recommended pad size of 100 mm
.
2
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
1
.0 mA
30
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
I
D
= 10 mA, referenced to 25
°
C
15
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
T =
25
°
C
500
100
DSS
GS
DS
J
m
A
V
= 24 V
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
20 V
nA
GSS
DS
GS
V
V
= V
, I
= 1.0 mA
1.0
1.7
5.0
0.95
1.4
60
2.2
V
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
V
/T
J
I =
10 mA, referenced to 25
°
C
D
mV/
°
C
GS(TH)
R
V
= 10 V
= 4.5 V
I
= 25 A
= 25 A
1.3
1.9
DS(on)
GS
GS
D
D
m
W
V
I
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 1.5
V
, I
=
1
5 A
S
DS
D
C
6000
2400
160
40
ISS
Output Capacitance
C
C
V
= 0
V
, f = 1
M
Hz, V
= 15 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
T
o
tal Gate Charge
Q
8.8
15
G(TH)
V
GS
= 4.5
V
, V
=
1
5 V; I
= 25 A
nC
nC
DS
D
Q
GS
Q
12
GD
Q
V
GS
= 10
V
, V
=
1
5
V
,
84
G(TOT)
DS
I
= 25 A
D
Turn
−
On Delay Time
Rise Time
t
17.2
31.6
34.3
12
d(ON)
t
r
V
= 4.5
V
, V
=
1
5
V
,
DS
GS
D
ns
ns
I
= 25 A, R
= 3
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
Turn
−
On Delay Time
Rise Time
t
12.7
20.4
38.6
11.3
d(ON)
t
r
V
= 10
V
, V
=
1
5
V
,
DS
GS
I
= 25 A, R
= 3
W
D
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4.
Switching characteristics are independent of operating junction temperatures.
3
NTMFS4982NF
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.4
0.32
58
0.7
SD
J
V
= 0
V
,
GS
S
V
I
= 2 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
RR
t
29
ns
nC
nH
a
V
= 0
V
,
d
I
/dt = 100 A/
m
s,
S
GS
I
S
= 25 A
Discharge Time
t
29
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
71
RR
L
L
0.65
0.20
1.5
S
D
G
T =
25
°
C
A
Gate Inductance
L
Gate Resistance
R
0.8
W
G
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
4. Switching
characteristics are independent of operating junction temperatures.
4
NTMFS4982NF
TYPICAL CHARACTERISTICS
200
3.4 V
150
135
120
105
90
180
160
140
120
100
80
V
DS
= 5 V
3.6 V to 10 V
3.2 V
3.0 V
2.8 V
75
T =
125
°
C
J
60
60
45
T =
−
55
°
C
J
40
T =
25
°
C
30
J
2.6 V
2.4 V
20
0
15
0
0
1
2
3
4
5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.012
0.010
0.008
2.0E
−
03
1.75E
−
03
1.5E
−
03
1.25E
−
03
1.0E
−
03
T =
25
°
C
I
= 25 A
J
D
T =
25
°
C
J
V
= 4.5 V
= 10 V
GS
0.006
0.004
0.002
0
V
GS
7.5E
−
04
5.0E
−
04
2.0 3.0
V
4.0
5.0
6.0
7.0
8.0
9.0 10
10 20
30 40 50 60 70 80 90
100 110 120
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
GS
D
Figure 3. On
−
Resistance vs. V
GS
Figure 4. On
−
Resistance vs. Drain Current and
Gate Voltage
1.8
1E
−
01
1E
−
02
1E
−
03
V
GS
= 0 V
I
V
= 20 A
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
D
= 10 V
GS
T =
125
°
C
J
1E
−
04
1E
−
05
T =
25
°
C
J
−
50
−
25
0
25
50
75
100
125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (
°
C)
J
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
5
NTMFS4982NF
TYPICAL CHARACTERISTICS
11
8000
7000
6000
5000
4000
3000
2000
Q
T
V
= 0 V
GS
10
9
T =
25
°
C
J
C
C
iss
8
7
6
5
Q
Q
gd
gs
oss
4
3
2
1
0
T =
25
°
C
J
V
V
I
= 15 V
= 10 V
= 25 A
DD
GS
1000
0
C
D
rss
0
5
10
15
20
25
100
100
0
10
20
30
40
50
60
70
80
90
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
DS
g
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
10
9
10000
1000
V
= 15 V
= 10 A
= 10 V
DD
V
GS
= 0 V
I
D
8
V
GS
t
7
d(off)
6
t
f
100
5
t
r
4
T =
25
°
C
J
t
d(on)
3
10
1
2
1
0
1
10
R ,
GATE RESISTANCE (
W
)
0
0.1
0.2
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
0.3
0.4
0.5
0.6
0.7
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
130
120
110
100
90
80
70
60
50
40
30
20
10
0
I
D
= 50 A
10
m
s
100
m
s
1 ms
10 ms
V
= 20 V
Single Pulse
= 25
°
C
GS
1
T
R
C
0.1
Limit
dc
DS(on)
Thermal Limit
Package Limit
0.01
0.1
1
10
25
50
75
100
125
150
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (
°
C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
6
NTMFS4982NF
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5×6, 1.27P
(SO
−
8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X
b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. ANODE
2X
0.905
PIN 1.
SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO
CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5×6, 1.27P (SO
−
8FL)
PAGE 1 OF 1
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onsemi
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onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
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onsemi
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©
Semiconductor Components Industries, LLC, 2018
onsemi
,
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onsemi
” or its affiliates
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−
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.
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−
is” and
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