onsemi-NTMFS4C08NT3G
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NTMFS4C08N
N-Channel, SO-8 FL
30
V
,
5
2 A
Features
•
Low R
to Minimize Conduction Losses
•
Low Capacitance to Minimize Driver Losses
DS(on)
•
Optimized Gate Charge to Minimize Switching Losses
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
5.8 m
W
@ 10 V
8.5 m
W
@ 4.5 V
30 V
52 A
Applications
•
CPU Power Delivery
•
DC
−
DC Converters
D (5
−
8)
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Symbol
Value
Unit
V
V
DSS
30
20
G (4)
V
GS
V
Continuous Drain
Current R
T =
25
°
C
I
16.4
A
A
D
q
JA
S (1,2,3)
N
−
CHANNEL MOSFET
T =
80
°
C
A
12.3
2.51
Power Dissipation
T =
25
°
C
A
P
W
A
D
D
D
D
R
q
JA
MARKING
DIAGRAMS
D
Continuous Drain
T =
25
°
C
A
I
D
25.3
19.0
6.0
Current R
≤
10 s
q
JA
T =
80
°
C
A
S
S
S
D
D
Power Dissipation
T =
25
°
C
A
P
W
A
SO
−
8 FLAT LEAD
CASE 488AA
STYLE 1
4C08N
AYWZZ
R
q
JA
Steady
State
Continuous Drain
Current R
T =
25
°
C
A
I
D
9.0
6.8
G
1
q
JA
D
T =
80
°
C
A
A
Y
= Assembly Location
=
Y
e
ar
Power Dissipation
T =
25
°
C
A
P
0.76
W
A
R
q
JA
W
ZZ
= Work Week
= Lot Traceabililty
Continuous Drain
Current R
T
= 25
°
C
=80
°
C
= 25
°
C
I
D
52
39
C
q
JC
T
C
C
Power Dissipation
T
P
25.5
W
ORDERING INFORMATION
R
q
JC
†
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
144
560
A
A
Device
Package
Shipping
A
p
Pulsed Source
Current (Body Diode)
T =
25
°
C, t
= 10
m
s
I
SM
A
p
NTMFS4C08NT1G
SO
−
8 FL
1500 /
(Pb
−
Free)
T
a
pe
& Reel
Current Limited by Package
T =
25
°
C
A
I
80
A
Dmax
NTMFS4C08NT3G
SO
−
8 FL
5000 /
(Pb
−
Free)
T
a
pe
& Reel
Operating Junction and Storage
T
e
mperature
T ,
−
55 to
+150
°
C
J
T
STG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Source Current (Body Diode)
Drain to Source DV/DT
I
23
7.0
42
A
S
dV/d
V/ns
mJ
t
Single Pulse Drain
−
to
−
Source Avalanche
Energy (T
= 25
°
C, V
= 10
V
, I
=
2
9 A
,
pk
E
AS
J
GS
L
GS
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 1 oz Cu.
1
Publication Order Number:
May, 2019
−
Rev. 6
NTMFS4C08N/D
NTMFS4C08N
2. Surface
−
mounted on FR4 board using the minimum recommended pad size.
3. This
is the absolute maximum rating. Parts are 100% tested at T
= 25
°
C,
J
V
GS
= 10
V
, I
=
2
1 Apk, E
= 22 mJ.
L AS
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
4.9
Unit
Junction
−
to
−
Case (Drain)
R
q
JC
R
49.8
164.6
21.0
q
JA
°
C/W
R
q
JA
R
q
JA
4. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 1 oz Cu.
5. Surface
−
mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
= 0
V
, I
=
2
50
m
A
30
34
V
V
(BR)DSS
GS
D
Drain
−
to
−
Source Breakdown Voltage
(transient)
V
V
= 0
V
, I
= 8.4 A,
= 100 ns
(BR)DSSt
GS
case
D(aval)
T
= 25
°
C, t
transient
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
13.8
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
= 24 V
T =
25
°
C
1.0
10
DSS
GS
DS
J
V
m
A
T =
125
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V
, I
= 250
m
A
1.3
0.3
2.1
V
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
V
/T
J
4.9
4.6
6.8
42
mV/
°
C
GS(TH)
R
V
GS
= 10 V
I
I
= 18 A
= 30 A
5.8
8.5
DS(on)
D
m
W
V
GS
= 4.5 V
D
Forward Transconductance
Gate Resistance
g
FS
V
= 1.5
V
, I
=
1
5 A
S
DS
D
R
T =
25
°
C
A
1.0
2.0
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
1113
702
39
1670
ISS
Output Capacitance
C
V
= 0
V
, f = 1
M
Hz, V
= 15 V
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Capacitance Ratio
C
C
/C
V
GS
= 0
V
, V
=
1
5
V
, f = 1
M
Hz
0.035
8.4
RSS ISS
DS
T
o
tal Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Gate Plateau Voltage
Q
1.8
G(TH)
Q
3.5
V
GS
= 4.5
V
, V
=
1
5 V; I
= 30 A
GS
GD
GP
DS
D
Q
V
3.3
3.4
V
T
o
tal Gate Charge
Q
V
GS
= 10
V
, V
=
1
5 V; I
= 30 A
18.2
nC
G(TOT)
DS
D
7.
Switching characteristics are independent of operating junction temperatures.
2
NTMFS4C08N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Turn
−
On Delay Time
Rise Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
9.0
33
d(ON)
t
r
V
= 4.5
V
, V
=
1
5
V
,
DS
GS
D
ns
I
= 15 A, R
= 3.0
W
G
Turn
−
Off Delay Time
Fall Time
t
15
d(OFF)
t
f
4.0
7.0
26
Turn
−
On Delay Time
Rise Time
t
d(ON)
t
r
V
= 10
V
, V
=
1
5
V
,
DS
GS
ns
V
I
D
= 15 A, R
= 3.0
W
G
Turn
−
Off Delay Time
Fall Time
t
19
d(OFF)
t
f
3.0
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T =
25
°
C
0.79
0.66
28.3
14.5
13.8
15.3
1.1
J
V
S
= 0
V
,
= 10 A
GS
I
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
ns
V
= 0
V
,
d
IS/dt = 100 A/
m
s,
GS
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
6. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
7. Switching
characteristics are independent of operating junction temperatures.
3
NTMFS4C08N
TYPICAL CHARACTERISTICS
80
100
90
80
70
60
50
4.5 V to 10 V
V
= 3 V
DS
4.2 V
4.0 V
70
60
50
40
30
20
T =
25
°
C
J
3.8 V
3.6 V
3.4 V
40
30
20
T =
125
°
C
J
3.2 V
T =
25
°
C
J
3.0 V
2.8 V
10
0
10
0
T =
−
55
°
C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
5.0
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.010
0.009
0.008
0.007
0.006
0.005
0.004
I
D
= 30 A
T =
25
°
C
J
V
= 4.5 V
GS
V
= 10 V
GS
0.003
0.002
0.004
0.002
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
10
20
30
40
50
60
70
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. V
GS
Figure 4. On
−
Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
10000
1000
V
GS
= 0 V
T =
150
°
C
I
V
= 30 A
J
D
= 10 V
GS
1.5
1.4
T =
125
°
C
J
1.3
1.2
1.1
1.0
0.9
0.8
0.7
T =
85
°
C
J
100
10
−
50
−
25
0
25
50
75
100
125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (
°
C)
J
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
4
NTMFS4C08N
TYPICAL CHARACTERISTICS
10
1800
1600
1400
1200
1000
800
Q
T
V
= 0 V
GS
T =
25
°
C
J
8
6
4
C
C
iss
Q
Q
oss
gd
gs
600
T =
25
°
C
J
V
V
= 15 V
= 10 V
= 30 A
DD
400
2
0
GS
200
0
I
D
C
rss
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18
20
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
20
18
16
14
12
10
8
1000
100
V
= 15 V
= 15 A
= 10 V
DD
V
= 0 V
GS
I
D
V
GS
t
t
r
f
t
d(off)
t
d(on)
10
1
6
T =
125
°
C
J
4
T =
25
°
C
J
2
0
1
10
R ,
GATE RESISTANCE (
W
)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
22
1000
100
10
20
18
16
I =
21 A
D
10
m
s
100
m
s
14
12
10
8
1 ms
10 ms
0 V < V
< 10 V
Single Pulse
GS
1
T
C
= 25
°
C
6
0.1
R
Limit
dc
DS(on)
4
Thermal Limit
Package Limit
2
0
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (
°
C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
5
NTMFS4C08N
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
80
70
60
50
40
30
20
T =
25
°
C
A
T =
85
°
C
A
10
10
0
1
1.E
−
08 1.E
−
07
0
10
20
30
40
(A)
50
60
70
1.E
−
06
1.E
−
05
1.E
−
04 1.E
−
03
I
D
PULSE WIDTH (SECONDS)
Figure 14. G
FS
vs. I
D
Figure 15. Avalanche Characteristics
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5×6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X
b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. ANODE
2X
0.905
PIN 1.
SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO
CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
4X
0.750
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5×6, 1.27P (SO−8FL)
PAGE 1 OF 1
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