onsemi-NTMFS4C59NT1G
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NTMFS4C59N
Power MOSFET
30
V
,
5
2 A, Single N
−
Channel, SO
−
8 FL
Features
•
Low R
to Minimize Conduction Losses
•
Low Capacitance to Minimize Driver Losses
DS(on)
•
Optimized Gate Charge to Minimize Switching Losses
•
These Devices are Pb
−
Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Applications
5.8 m
W
@ 10 V
8.5 m
W
@ 4.5 V
•
CPU Power Delivery
•
DC
−
DC Converters
30 V
52 A
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
D (5
−
8)
Parameter
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Symbol
Value
30
Unit
V
V
DSS
V
GS
20
V
G (4)
Continuous Drain
Current R
T =
25
°
C
I
16.4
A
A
D
q
JA
T =
80
°
C
A
12.3
2.51
S (1,2,3)
N
−
CHANNEL MOSFET
Power Dissipation
T =
25
°
C
A
P
W
A
D
D
D
D
R
q
JA
Continuous Drain
T =
25
°
C
A
I
D
25.3
19.0
6.0
MARKING
DIAGRAM
Current R
≤
10 s
q
JA
T =
80
°
C
A
Power Dissipation
T =
25
°
C
A
P
W
A
D
R
q
JA
Steady
State
S
S
S
G
D
D
1
Continuous Drain
Current R
T =
25
°
C
A
I
D
9.0
6.8
4C59N
AYWZZ
q
JA
SO
−
8 FLAT LEAD
CASE 488AA
STYLE 1
T =
80
°
C
A
Power Dissipation
T =
25
°
C
A
P
0.76
W
A
D
R
q
JA
Continuous Drain
Current R
T
= 25
°
C
=80
°
C
= 25
°
C
I
D
52
39
C
A
Y
W
ZZ
= Assembly Location
=
Y
e
ar
= Work Week
= Lot Traceabililty
q
JC
T
C
C
Power Dissipation
T
P
25.5
W
A
R
q
JC
Pulsed Drain
Current
T =
25
°
C, t
= 10
m
s
I
DM
146
80
A
p
ORDERING INFORMATION
Current Limited by Package
T =
25
°
C
A
I
A
Dmax
†
Operating Junction and Storage
T
e
mperature
T ,
STG
−
55 to
°
C
Device
Package
Shipping
J
T
+150
NTMFS4C59NT1G
SO
−
8 FL
(Pb
−
Free)
1500 /
Source Current (Body Diode)
Drain to Source dV/dt
I
S
23
7.0
42
A
T
a
pe & Reel
dV/d
V/ns
mJ
t
NTMFS4C59NT3G
SO
−
8 FL
(Pb
−
Free)
5000 /
Single Pulse Drain
−
to
−
Source Avalanche
Energy (T
= 25
°
C, V
= 10
V
, I
=
2
9 A
,
pk
E
AS
T
a
pe & Reel
J
GS
L
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
GS
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 1 oz Cu.
2. Surface
−
mounted on FR4 board using the minimum recommended pad size.
3. Parts
are 100% tested at T
= 25
°
C, V
= 10
V
, I
=
2
0 A
, EAS = 20 mJ.
J
GS
L
pk
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2013
−
Rev. 0
NTMFS4C59N/D
NTMFS4C59N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
4.9
Unit
Junction
−
to
−
Case (Drain)
R
q
JC
R
49.8
164.6
21.0
q
JA
°
C/W
R
q
JA
R
q
JA
4. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 1 oz Cu.
5. Surface
−
mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
= 0
V
, I
=
2
50
m
A
30
34
V
V
(BR)DSS
GS
D
Drain
−
to
−
Source Breakdown Voltage
(transient)
V
V
= 0
V
, I
= 8.4 A,
= 100 ns
(BR)DSSt
GS
case
D(aval)
T
= 25
°
C, t
transient
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
14.4
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
= 24 V
T =
25
°
C
1.0
10
DSS
GS
DS
J
V
m
A
T =
125
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V
, I
= 250
m
A
1.3
2.1
V
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
V
/T
4.8
4.6
6.8
50
mV/
°
C
GS(TH)
J
R
V
= 10 V
I
I
= 30 A
= 18 A
5.8
8.5
DS(on)
GS
D
m
W
V
GS
= 4.5 V
D
Forward Transconductance
Gate Resistance
g
FS
V
= 1.5
V
, I
=
1
5 A
S
DS
D
R
T =
25
°
C
A
1.0
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
1252
610
126
0.101
10.9
1.9
ISS
Output Capacitance
C
V
= 0
V
, f = 1
M
Hz, V
= 15 V
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Capacitance Ratio
C
C
/C
V
GS
= 0
V
, V
=
1
5
V
, f = 1
M
Hz
RSS ISS
DS
T
o
tal Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Gate Plateau Voltage
T
o
tal Gate Charge
Q
G(TH)
Q
3.4
V
GS
= 4.5
V
, V
=
1
5 V; I
= 30 A
GS
GD
GP
DS
D
Q
V
5.4
3.1
V
Q
V
GS
= 10
V
, V
=
1
5 V; I
= 30 A
22.2
nC
G(TOT)
DS
D
Turn
−
On Delay Time
Rise Time
t
10
32
16
6.0
d(ON)
t
r
V
= 4.5
V
, V
=
1
5
V
,
DS
GS
D
ns
I
= 15 A, R
= 3.0
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
7.
Switching characteristics are independent of operating junction temperatures.
2
NTMFS4C59N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Turn
−
On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
7.0
28
d(ON)
Rise Time
t
r
V
= 10
V
, V
=
1
5
V
,
DS
GS
D
ns
I
= 15 A, R
= 3.0
W
G
Turn
−
Off Delay Time
t
20
d(OFF)
Fall Time
t
f
4.0
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.79
0.65
31
1.1
SD
RR
J
V
S
= 0
V
,
GS
V
I
= 10 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
t
15
ns
a
V
= 0
V
,
d
IS/dt = 100 A/
m
s,
GS
I
S
= 30 A
Discharge Time
t
16
b
Reverse Recovery Charge
Q
15
nC
RR
6. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
7. Switching
characteristics are independent of operating junction temperatures.
3
NTMFS4C59N
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
100
4.5 V to 10 V
4.0 V
90
80
70
60
50
40
30
20
V
= 5 V
DS
T =
25
°
C
J
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
T =
125
°
C
J
2.8 V
= 2.6 V
10
0
10
0
T =
−
55
°
C
J
V
T =
25
°
C
J
GS
0
1
2
3
4
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
5.5
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
DS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.026
0.024
0.022
0.020
0.018
0.016
0.014
0.009
0.008
0.007
0.006
0.005
I
= 30 A
T =
25
°
C
D
J
V
= 4.5 V
GS
0.012
0.010
0.008
0.006
0.004
0.002
V
= 10 V
GS
0.004
0.003
3
4
5
6
7
8
9
10
10
20
30
40
50
60
70
V
GS
, GATE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
1600
1.7
1.6
1.5
V
= 0 V
GS
V
= 10 V
= 30 A
GS
1400
1200
1000
800
T =
25
°
C
J
C
iss
I
D
1.4
1.3
1.2
1.1
1.0
0.9
C
C
oss
600
400
rss
200
0
0.8
0.7
−
50
−
25
0
25
50
75
100 125
150
0
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. On
−
Resistance Variation with
Figure 6. Capacitance Variation
Temperature
4
NTMFS4C59N
TYPICAL CHARACTERISTICS
10
8
1000
V
GS
V
DD
= 10 V
= 15 V
Q
T
I
D
= 15 A
t
d(off)
100
t
f
6
4
t
r
Q
Q
GD
GS
10
1
t
d(on)
V
V
= 10 V
= 15 V
= 30 A
GS
DD
2
0
I
D
T =
25
°
C
J
0
2
4
6
8
10 12 14 16 18 20 22 24
1
10
R ,
GATE RESISTANCE (
W
)
100
Q ,
TOTAL GATE CHARGE (nC)
G
G
Figure 7. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
20
18
16
1000
100
10
0 V < V
< 10 V
GS
V
GS
= 0 V
10
m
s
14
12
10
8
100
m
s
T =
25
°
C
J
T =
125
°
C
J
1 ms
10 ms
1
6
4
R
Limit
DS(on)
0.1
dc
Thermal Limit
Package Limit
2
0
0.01
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.01
0.1
1
10
100
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
80
70
60
50
40
30
20
20
18
16
14
12
10
8
I
D
= 20 A
6
4
10
0
2
0
25
50
75
100
125
150
0
5
10 15 20 25 30 35 40 45 50
(A)
T , STARTING JUNCTION TEMPERATURE (
°
C)
I
D
J
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
Figure 12. G
FS
vs. I
D
5
NTMFS4C59N
TYPICAL CHARACTERISTICS
100
10
1
1.E
−
08 1.E
−
07
1.E
−
06
1.E
−
05
1.E
−
04
1.E
−
03
PULSE WIDTH (sec)
Figure 13. Avalanche Characteristics
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 14. Thermal Response
6
NTMFS4C59N
PACKAGE DIMENSIONS
DFN5 5×6, 1.27P (SO8 FL)
CASE 488AA
ISSUE H
2 X
NOTES:
1. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
4.00
6.15 BSC
5.90
3.65
D1
D2
E
E1
E2
e
4.70
3.80
5.10
4.20
c
A1
5.70
3.45
6.10
3.85
1
2
3
4
1.27 BSC
G
K
L
L1
M
0.51
1.20
0.51
0.05
3.00
0
0.61
1.35
0.61
0.17
3.40
−−−
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
DETAIL A
q
12
A
_
_
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
STYLE 1:
3X
4X
PIN 1.
SOURCE
2. SOURCE
3. SOURCE
4. GATE
1.270
0.750
4X
1.000
b
8X
0.10
0.05
C
c
A
B
5. DRAIN
6. DRAIN
e/2
L
0.965
1
4
0.
2
9
X
05
0.475
1.330
K
2X
0.495
4.530
E2
PIN 5
(EXPOSED PAD)
M
3.200
L1
2X
1.530
D2
BOTTOM VIEW
G
4.560
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC
does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part.
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T
:
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−
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o
ll Free
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o
ll Free USA/Canada
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NTMFS4C59N/D
