onsemi-NTMFS6H800NT1G
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NTMFS6H800N
N-Channel
80
V
,
2
.1 m
W
, 203 A
Features
•
Small Footprint (5×6 mm) for Compact Design
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low Q
and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
•
These Devices are Pb
−
Free and are RoHS Compliant
80 V
2.1 m
W
@ 10 V
203 A
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
80
Unit
V
D (5)
V
DSS
Gate
−
to
−
Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25
°
C
= 100
°
C
= 25
°
C
I
203
143
200
100
28
A
C
D
q
JC
G (4)
T
C
Steady
State
Power Dissipation
T
C
P
W
A
D
R
S (1,2,3)
N
−
CHANNEL MOSFET
q
JC
T
C
= 100
°
C
Continuous Drain
Current R
T =
25
°
C
A
I
D
q
JA
T =
100
°
C
A
20
Steady
State
MARKING
DIAGRAM
Power Dissipation
T =
25
°
C
A
P
3.8
1.9
900
W
D
R
q
JA
T =
100
°
C
A
D
1
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
A
S
S
S
G
D
D
A
p
DFN5
(SO
−
8FL)
CASE 488AA
STYLE 1
6H800N
AYWZZ
Operating Junction and Storage
T
e
mperature
T , T
−
55 to
°
C
J
stg
+ 175
Source Current (Body Diode)
I
S
166
A
D
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
1271
mJ
A
Y
= Assembly Location
=
Y
e
ar
Energy (I
= 16.1 A)
L(pk)
W
ZZ
= Work Week
= Lot Traceability
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.75
39
Unit
Junction
−
to
−
Case
−
Steady State
R
°
C/W
q
JC
R
q
JA
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface
−
mounted on FR4 board using a 650 mm
, 2 oz. Cu pad.
3. Maximum
current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
May, 2019
−
Rev. 1
NTMFS6H800N/D
NTMFS6H800N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
80
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
39
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
T =
25
°
C
10
DSS
GS
DS
J
V
= 80 V
m
A
T =
125
°
C
J
250
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
2
0 V
nA
GSS
DS
GS
GS
V
V
= V
, I
= 330
m
A
2.0
4.0
V
GS(TH)
DS
D
Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
V
/T
8.0
1.8
2.6
138
mV/
°
C
GS(TH)
J
R
V
= 10 V
I
I
= 50 A
= 50 A
2.1
3.5
DS(on)
GS
D
m
W
V
= 6 V
GS
D
Forward Transconductance
g
FS
V
=15
V
, I
=
5
0 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
5530
760
27
ISS
Output Capacitance
C
OSS
C
RSS
Q
OSS
pF
nC
V
V
= 0
V
, f = 1
M
Hz, V
= 40 V
GS
DS
Reverse Transfer Capacitance
Output Charge
116
85
T
o
tal Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
15
G(TH)
nC
V
Q
26
= 10
V
, V
=
4
0 V; I
= 50 A
GS
GD
GP
GS
DS
D
Q
V
16
4.8
Turn
−
On Delay Time
Rise Time
t
25
89
97
85
d(ON)
t
r
V
= 10
V
, V
=
6
4
V
,
DS
GS
D
ns
V
I
= 50 A, R
= 2.5
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T =
25
°
C
0.8
0.7
76
36
40
82
1.2
J
V
S
= 0
V
,
= 50 A
GS
I
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
ns
V
= 0
V
,
d
I
/dt = 100 A/
m
s,
S
GS
I
S
= 50 A
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
5. Switching
characteristics are independent of operating junction temperatures.
2
NTMFS6H800N
TYPICAL CHARACTERISTICS
350
350
300
250
200
150
100
50
5.5 V to 10 V
V
DS
= 10 V
5.0 V
4.5 V
300
250
200
150
T =
25
°
C
J
100
50
0
V
GS
= 4.0 V
7
T =
125
°
C
J
T =
−
55
°
C
J
0
0
1
2
3
4
5
6
8
2
3
4
5
6
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
4.0
40
35
30
25
20
15
10
T =
25
°
C
J
T =
25
°
C
D
J
I
= 50 A
3.5
3.0
2.5
2.0
V
= 6.0 V
= 10 V
GS
V
GS
1.5
1.0
5
0
3
4
5
6
7
8
9
10
0
50
100
150
200
250
300
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
1M
100K
10K
1K
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
I
= 10 V
= 50 A
GS
T =
175
°
C
T =
150
°
C
J
J
D
T =
125
°
C
J
T =
85
°
C
J
100
T =
25
°
C
J
10
1
0.6
0.4
−
50
−
25
5
15
V
25
35
45
55
65
75
0
25
50
75 100
125 150 175
T , JUNCTION TEMPERATURE (
°
C)
J
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTMFS6H800N
TYPICAL CHARACTERISTICS
10
10K
C
ISS
9
8
7
6
5
4
3
2
1K
100
10
C
OSS
Q
Q
GD
GS
V
= 40 V
V
= 0 V
DS
GS
T =
25
°
C
T =
25
°
C
J
J
C
RSS
1
0
I
D
= 50 A
f = 1 MHz
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source vs. Total Charge
1K
1K
100
10
V
GS
= 0 V
t
r
t
d(off)
100
t
f
T =
125
°
C
J
1
V
V
= 10 V
= 64 V
GS
t
DS
d(on)
I
D
= 50 A
T =
−
55
°
C
T =
25
°
C
J
J
0.1
10
1K
1
10
R ,
GATE RESISTANCE (
W
)
100
0.3
0.4
0.5
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
T
V
= 25
°
C
C
≤
10 V
GS
Single Pulse
T (initial)
= 25
°
C
J
100
10
10
m
s
10
1
T (initial)
= 100
°
C
J
0.5 ms
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1K
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
4
NTMFS6H800N
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS6H800NT1G
6H800N
DFN5
(Pb
−
Free)
1500 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5×6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X
b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. ANODE
2X
0.905
PIN 1.
SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO
CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
4X
0.750
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5×6, 1.27P (SO−8FL)
PAGE 1 OF 1
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©
Semiconductor Components Industries, LLC, 2018
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www.onsemi.com/site/pdf/Patent
−
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T
:
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−
282
−
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o
ll Free USA/Canada
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