onsemi-NTMFSC010N08M7
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DATA SHEET
N-Channel
80
V
,
1
0 m
W
, 61 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
80 V
10 m
W
@ 10 V
61 A
N
−
Channel MOSFET
D (5
−
8)
NTMFSC010N08M7
Features
•
DUAL COOL Top Side Cooling PQFN Package
G (1)
•
Max r
= 10 m
W
at V
= 10
V
, I
=
1
0 A
GS D
DS(on)
•
High Performance Technology for Extremely Low r
•
100% UIL Tested
DS(on)
S (2
−
4)
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
80
Unit
V
V
DSS
Gate
−
to
−
Source Voltage
V
GS
20
V
DFN8 5×6
(Dual Cool 56)
CASE 506EG
Continuous Drain
Current R
Steady
State
T
= 25
°
C
= 100
°
C
= 25
°
C
I
61
A
C
D
q
JC
T
C
38.6
78.1
31.2
12.5
7.9
Power Dissipation
T
C
P
W
A
D
MARKING DIAGRAM
R
q
JC
T
C
= 100
°
C
AYWWZZ
10N8M7
Continuous Drain
Current R
Steady
State
T =
25
°
C
A
I
D
q
JA
T =
100
°
C
A
Power Dissipation
T =
25
°
C
P
D
3.3
W
A
R
q
JA
T =
100
°
C
A
1.3
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
180
A
A
p
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+150
°
C
J
stg
A
Y
= Assembly Location
=
Y
e
ar
WW
ZZ
= Work Week
= Lot Traceability
Source Current (Body Diode)
I
61
A
S
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
640
mJ
10N8M7 = Specific Device Code
Energy (I
= 3.9 A)
L(pk)
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
NTMFSC010N08M7
Package
Shipping
DFN8
(Pb
−
Free)
3000 /
T
a
pe
& Reel
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface
−
mounted on FR4 board using a 1 in
pad size, 1 oz Cu pad.
3. Maximum
current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
September, 2021
−
Rev. 1
NTMFSC010N08M7/D
NTMFSC010N08M7
°
ELECTRICAL CHARACTERISTICS
(T =
25 C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
80
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
49
mV/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate Threshold Voltage
I
V
GS
= 0
V
, V
=
8
0 V
T =
25
°
C
1
m
A
DSS
DS
J
I
V
DS
= 0
V
, V
=
20 V
100
nA
GSS
GS
V
V
GS
= V
I =
120
m
A
DS, D
2.5
3.3
−
9
4.5
V
mV/
°
C
m
W
S
GS(TH)
Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
Forward Transconductance
V
/T
GS(TH) J
R
V
= 10 V
= 5 V
I
I
= 10 A
= 10 A
7.6
10
40
DS(on)
GS
D
gFS
V
21.5
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
C
V
GS
= 0
V
, f = 1
M
Hz
V =
0 V
DS
2373
2080
286
11
pF
iss
iss
V
DS
= 40 V
2700
430
17
Output Capacitance
Reverse Transfer Capacitance
Diode Capacitance
Gate Resistance
C
oss
C
rss
C
275
0.6
diode
R
V
GS
= 0.5
V
, f =
1
MHz
4
W
g
Gate Charge (1V)
Q
V
= 0 to 1 V
= 0 to 2 V
= 0 to 3 V
= 0 to 4 V
= 0 to 5 V
= 0 to 6 V
= 0 to 7 V
= 0 to 8 V
= 0 to 9 V
= 0 to 10 V
V =
40 V;
DS
D
2.1
nC
G(1V)
GS
GS
GS
GS
GS
GS
GS
GS
GS
I
= 10 A
Threshold Gate Charge
Gate Charge (3V)
Q
V
V
V
V
V
V
V
V
4.3
g(th)
Q
Q
Q
Q
Q
Q
Q
6.4
G(3V)
G(4V)
G(5V)
G(6V)
G(7V)
G(8V)
G(9V)
Gate Charge (4V)
8.6
Gate Charge (5V)
9.6
Gate Charge (6V)
18.7
21.3
24
Gate Charge (7V)
Gate Charge (8V)
Gate Charge (9V)
26.6
29.3
11.8
4.3
T
o
tal Gate Charge
Q
V
GS
38
G(TOT)
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Switching Charge
Q
Q
V
= 40 V I
= 10 A
gs
gd
DS ,
D
Q
13.1
5.5
sw
GP
oss
Plateau Voltage
V
V
Output Charge
Q
V
V
= 40 V V
= 0 V
26
nC
DS
,
GS
Turn
−
On Delay Time
Turn
−
On Rise Time
Turn
−
Off Delay Time
Turn
−
Off Fall Time
t
= 40
V
, I
=
1
0 A,
14
6
ns
ns
ns
ns
d(ON)
DD
= 10
V
, R
D
GEN
V
= 6
W
GS
t
r
t
27
6
d(OFF)
t
f
DRAIN – SOURCE DIODE CHARACTERISTICS
Source to Drain Diode Voltage
V
SD
I
= 10 A, V
= 0 V
0.82
1.2
V
SD
GS
5.
Switching characteristics are independent of operating junction temperatures.
2
NTMFSC010N08M7
°
ELECTRICAL CHARACTERISTICS
(T =
25 C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN – SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Charge Time
T
V
GS
= 0
V
,
d
I
/dt = 100 A/
m
s,
41
24.6
16.1
45
50
ns
RR
SD
I
= 10 A
S
t
a
Discharge Time
t
b
Reverse Recovery Charge
Q
58
nC
RR
4. Pulse
T
e
st: pulse width
≤
300
m
s, duty cycle
≤
2%.
5. Switching
characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Value
1.6
3.0
38
Unit
R
R
R
R
R
R
R
R
R
R
R
R
R
R
JA
(
T
o
p Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
(Note 1e)
(Note 1f)
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
JC
JC
JA
JA
JA
JA
JA
JA
JA
JA
JA
JA
JA
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
81
27
34
16
°
C/W
19
(Note 1g)
(Note 1h)
(Note 1i)
26
61
16
(Note 1j)
23
(Note 1k)
(Note 1l)
11
13
6. R
is determined with the device mounted on a FR
−
4 board using a specified pad of 2 oz copper as shown below. R
is guaranteed by
θ
θ
JA
design while R
is determined by the user’s board design.
_
CA
b) 81
°
C/W when mounted on
a minimum pad of 2 oz copper.
a) 38
°
C/W when mounted on
a 1 in
2
pad of 2 oz copper.
c) Still air, 20.9
⋅
10.4
⋅
12.7 mm Aluminum Heat Sink, 1 in
2
pad of 2 oz copper
d) Still air, 20.9
⋅
10.4
⋅
12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
e) Still air, 45.2
⋅
41.4
⋅
11.7 mm Aavid Thermalloy Part # 10
−
L41B
−
11 Heat Sink, 1 in
2
pad of 2 oz copper
f) Still air, 45.2
⋅
41.4
⋅
11.7 mm Aavid Thermalloy Part # 10
−
L41B
−
11 Heat Sink, minimum pad of 2 oz copper
g) .200FPM Airflow, No Heat Sink, 1 in
2
pad of 2 oz copper
h) .200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i) .200FPM Airflow, 20.9
⋅
10.4
⋅
12.7 mm Aluminum Heat Sink, 1 in
2
pad of 2 oz copper
j) .200FPM Airflow, 20.9
⋅
10.4
⋅
12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
k) .200FPM Airflow, 45.2
⋅
41.4
⋅
11.7 mm Aavid Thermalloy Part # 10
*
L41B
*
11 Heat Sink, 1 in
2
pad of 2 oz copper
l) .200FPM Airflow, 45.2
⋅
41.4
⋅
11.7 mm Aavid Thermalloy Part # 10
*
L41B
*
11 Heat Sink, minimum pad of 2 oz copper
7. Pulse
T
e
st: Pulse Width < 300
_
s, Duty cycle < 2.0%.
3
NTMFSC010N08M7
TYPICAL CHARACTERISTICS
150
120
90
150
V
GS
= 10 V
V
DS
= 5 V
9 V
8 V
7 V
120
90
60
60
T =
25
°
C
J
6 V
5 V
30
0
30
0
T =
150
°
C
J
T =
−
55
°
C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
2
4
6
8
10
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
18
16
14
12
9.0
8.5
8.0
T =
25
°
C
J
T =
25
°
C
D
J
I
= 10 A
V
GS
= 10 V
10
7.5
7.0
8
6
6
7
8
9
10
0
10 20 30 40 50 60 70
80 90
100
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
10
2.0
T =
150
°
C
J
V
= 10 V
= 10 A
GS
1.8
1.6
1.4
1.2
1.0
I
D
1
T =
125
°
C
J
T =
100
°
C
J
0.1
T =
85
°
C
J
0.01
0.8
0.6
V
= 0 V
70
GS
0.001
−
100
−
50
0
50
100
150
200
0
10
20
30
40
50
60
80
T , JUNCTION TEMPERATURE (
°
C)
J
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
4
NTMFSC010N08M7
TYPICAL CHARACTERISTICS
10K
1K
10
9
Q
G(TOT)
C
ISS
8
7
6
5
4
3
2
Q
Q
GD
GS
C
OSS
100
C
RSS
10
1
V
I
= 40 V
= 10 A
V
= 0 V
DS
GS
T =
25
°
C
D
J
1
0
T =
25
°
C
J
f = 1 MHz
0
20
40
60
80
0
5
10
15
20
25
30
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
1000
100
1000
100
10
V
GS
= 0 V
t
t
d(off)
1
d(on)
10
1
0.1
t
T =
150
°
C
r
V
V
= 10 V
= 40 V
= 10 A
J
GS
0.01
DS
t
f
I
D
T =
25
°
C
T =
−
55
°
C
J
J
0.001
1
10
R ,
GATE RESISTANCE (
W
)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
T
= 25
°
C
C
Single Pulse
≤
10 V
V
GS
T
= 25
°
C
J(initial)
10
m
s
10
100
m
s
T
= 125
°
C
J(initial)
1
0.5 ms
1 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
0.1
1
0.1
1
10
100
0.001
0.01
0.1
1
10
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
t ,
TIME IN AVALANCHE (mS)
AV
Figure 11. Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
5
NTMFSC010N08M7
TYPICAL CHARACTERISTICS
2
1
50% Duty Cycle
20%
10%
5%
2%
0.1
1%
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Thermal Response
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
6
NTMFSC010N08M7
PACKAGE DIMENSIONS
DFN8 5.1×6.15, 1.27
P
,
D
UAL COOL
CASE 506EG
ISSUE D
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi’s
product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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T
:
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o
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