onsemi-NTMFSC0D9N04CL
| Part # | onsemi-NTMFSC0D9N04CL |
Download  | onsemi-NTMFSC0D9N04CL |
N-Channel, DUAL COOL
)
,
DFN8 5×6
40
V
,
0
.85 m
W
, 313 A
NTMFSC0D9N04CL
Features
•
Advanced Dual
−
Sided Cooled Packaging
V
R
MAX
I MAX
D
SSS
SS(ON)
•
Ultra Low R
to Minimize Conduction Losses
DS(on)
0.85 m
W
@ 10 V
1.3 m
W
@ 4.5 V
•
MSL1 Robust Packaging Design
40 V
313 A
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
N
−
Channel MOSFET
Typical Applications
•
Orring FET/Load Switching
•
Synchronous Rectifier
•
DC
−
DC Conversion
S
S
S
1
8
D
D
D
2
3
7
6
MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise specified)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
40
Unit
V
G
4
5
D
V
DSS
Gate
−
to
−
Source Voltage
V
GS
20
V
Continuous Drain
Current R
I
313
A
D
q
JC
Steady
State
T
= 25
°
C
= 25
°
C
C
Power Dissipation
P
167
W
A
D
R
q
JC
Continuous Drain
Current R
I
D
49.5
q
JA
Steady
State
T
A
DFN8 5×6
CASE 506EG
Power Dissipation
P
3.8
W
D
R
q
JA
Pulsed Drain Current
T
A
= 25
°
C, t
= 10
m
s
I
DM
900
A
p
MARKING DIAGRAM
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
°
C
J
stg
+175
AWLYW
410LDC
Source Current (Body Diode)
I
S
169
706
A
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
Energy (I
= 29 A)
L(pk)
Lead
T
e
mperature Soldering Reflow for Sol-
dering Purposes (1/8
″
from case for 10 s)
T
L
300
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
410LDC = Specific Device Code
A
WL
Y
= Assembly Location
= Wafer Lot
=
Y
e
ar
2
1. Surface
−
mounted on FR4 board using 1 in
pad size, 1 oz Cu pad.
2. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
W
= Work Week
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
October, 2020
−
Rev. 5
NTMFSC0D9N04CL/D
NTMFSC0D9N04CL
THERMAL CHARACTERISTICS
Symbol
Parameter
Max
0.9
39
Unit
°
C/W
R
R
q
JC
JA
q
3. The
entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
*
to
*
Source Breakdown Voltage
V
V
= 0
V
, I
=
2
50
m
A
40
V
(BR)DSS
GS
D
Drain
*
to
*
Source Breakdown Voltage
V
/ T
I =
250
m
A, ref to 25
°
C
D
21.2
mV/
°
C
(BR)DSS
J
T
e
mperature Coefficient
Zero Gate Voltage Drain Current
I
V
GS
= 0 V
,
V =
40 V
T =
25
°
C
J
10
m
A
DSS
DS
T =
125
°
C
100
100
J
Gate
*
to
*
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
= 20 V
nA
GSS
DS
GS
V
V
GS
= V
, I
= 250
m
A
1.2
2.0
V
GS(TH)
DS
D
/ T
Negative Threshold
T
e
mperature
Coefficient
V
I
D
= 250
m
A, ref to 25
°
C
−
5.8
mV/
°
C
GS(TH)
J
Drain
*
to
*
Source On Resistance
R
V
= 10 V, I
= 50 A
0.65
1
0.85
1.3
m
W
W
DS(on)
GS
D
V
GS
= 4.5
V
, I
= 50 A
D
Gate
−
Resistance
R
T
A
= 25
°
C
1.8
G
CHARGES & CAPACITANCES
Input Capacitance
C
V
= 0
V
, f = 1
M
Hz, V
= 20 V
8500
3400
110
61
pF
ISS
GS
DS
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
OSS
C
RSS
Q
Q
V
GS
= 4.5
V
, V
=
2
0
V
, I
=
5
0 A
nC
G(TOT)
G(TOT)
DS
D
T
o
tal Gate Charge
V
GS
= 10
V
, V
=
2
0
V
, I
=
5
0 A
143
27
DS
D
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
Q
GS
GD
GP
19
V
2.7
V
Turn
*
On Delay Time
t
t
V
= 4.5
V
, V
= 32 V
,
20.2
94.6
77.8
111
ns
d(ON)
GS
D
DS
I
= 50 A, R
= 2.5
W
G
Rise Time
t
r
Turn
*
Off Delay Time
Fall Time
d(OFF)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
GS
= 0
V
, I
=
5
0 A
T =
25
°
C
0.75
0.6
92
1.2
V
SD
S
J
T =
125
°
C
J
Reverse Recovery Time
t
V
GS
= 0
V
,
d
I
/dt = 100 A/
m
s,
ns
RR
S
I
= 50 A
S
Reverse Recovery Charge
Q
170
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Switching
characteristics are independent of operating junction temperatures.
2
NTMFSC0D9N04CL
TYPICAL CHARACTERISTICS
180
200
180
160
140
120
100
80
10 V to 3.2 V
160
3.0 V
140
120
2.8 V
100
80
60
40
T =
25
°
C
J
60
40
T =
125
°
C
20
0
J
20
0
T =
−
55
°
C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.0013
0.0012
0.0011
0.0010
0.0009
0.0008
0.0012
0.0011
T =
25
°
C
J
V
= 4.5 V
= 10 V
GS
0.0010
0.0009
0.0008
0.0007
0.0006
T =
25
°
C
D
J
I
= 50 A
V
GS
0.0007
0.0006
0.0005
0.0004
3
4
5
6
7
8
9
10
10
20
30
40
50
60
V
GS
, GATE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
1.9
1.7
1.5
1.3
1.1
1M
100k
10k
1k
V
I
= 10 V
= 40 A
GS
D
T =
150
°
C
J
T =
125
°
C
J
T =
85
°
C
J
100
10
0.9
0.7
−
50
−
25
0
25
50
75 100
125 150 175
5
10
V
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (
°
C)
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
J
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTMFSC0D9N04CL
TYPICAL CHARACTERISTICS
11k
10k
9k
10
8
30
25
20
Q
T
C
ISS
8k
C
OSS
7k
V
= 0 V
GS
6
4
T =
25
°
C
6k
J
15
10
f = 1 MHz
5k
Q
GD
Q
GS
4k
V
= 20 V
DS
3k
T =
25
°
C
J
2
0
I
D
= 50 A
2k
5
0
1k
0
C
RSS
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
120
140
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
10,00
100
t
t
d(off)
46
41
36
31
26
21
16
11
f
t
r
t
d(on)
T =
125
°
C
J
10
1
V
V
I
= 4.5 V
= 20 V
= 50 A
GS
T =
150
°
C
J
DD
T =
25
°
C
J
6
1
D
T =
−
55
°
C
J
1
10
R ,
GATE RESISTANCE (
W
)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
1000
100
10
m
s
T
= 25
°
C
J(initial)
T
C
= 25
°
C
Single Pulse
≤
10 V
T
= 100
°
C
0.5 ms
1 ms
10 ms
J(initial)
V
GS
10
1
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
1E
−
04
1E
−
03
TIME IN AVALANCHE (s)
1E
−
02
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE(V)
Figure 11. Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
4
NTMFSC0D9N04CL
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
0.01
0.001
Single Pulse
0.0001
0.0000001 0.000001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
−
R
q
JA
(t) (
5
C/W)
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
T
C
= 25
°
C
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 14. Thermal Characteristics
−
R
q
JC
(t) (
5
C/W)
ORDERING INFORMATION
Device
†
Device Marking
Package
Shipping
NTMFSC0D9N04CL
410LDC
DFN8 5×6
(Pb
−
Free/Halogen Free)
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5×6.15, 1.27
P
,
D
UAL COOL
CASE 506EG
ISSUE D
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXX
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
=
Y
e
ar
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
WW =
Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84257G
DFN8 5×6.15, 1.27
P
,
D
UAL COOL
PAGE 1 OF 1
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©
Semiconductor Components Industries, LLC, 2018
ON Semiconductor and
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−
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