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” or its affiliates and/or
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onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using
onsemi
products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by
onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hol
d
onsemi
and its officers, employees,
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associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
N-Channel, DUAL COOL
t
,
80
V
,
2
.9 m
W
, 154 A
DFN8 5×6.15
NTMFSC2D9N08H
Features
•
Advanced Dual
−
Side Cooled Packaging
•
Ultra Low R
to Minimize Conduction Losses
V
R
MAX
I MAX
D
DS(on)
(BR)DSS
DS(ON)
•
MSL1 Robust Packaging Design
80 V
2.9 m
W
@ 10 V
154 A
•
Low Qg and Qoss to Minimize Charge Losses
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
N
−
Channel MOSFET
Compliant
S
S
S
1
8
D
D
D
Typical Applications
•
DC
−
DC Conversion
•
Orring FET/Load Switching
•
Synchronous Rectification
2
3
7
6
MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise specified)
J
G
4
5
D
Parameter
Drain
−
to
−
Source Breakdown Voltage
Gate
−
to
−
Source Voltage
Symbol
Value
80
Unit
V
V
(BR)DSS
V
GS
20
V
Continuous Drain
Current R
I
154
A
D
q
JC
Steady
State
T
= 25
°
C
C
Power Dissipation
P
166
23
W
A
D
R
q
JC
Continuous Drain
Current R
I
D
DFN8 5×6.15
CASE 506EG
q
JA
Steady
State
T =
25
°
C
A
Power Dissipation
P
3.8
W
D
R
q
JA
MARKING DIAGRAM
Pulsed Drain Current
T =
25
°
C, t
= 100
m
s
I
DM
638
A
A
p
AYWWZZ
2D9N08
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+175
°
C
J
stg
Source Current (Body Diode)
I
138
173
A
S
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
Energy (I
= 34 A)
AV
Lead
T
e
mperature Soldering Reflow for Sol-
dering Purposes (1/8
″
from case for 10 s)
T
L
260
°
C
2D9N08 = Specific Device Code
= Assembly Plant Code
YWW = Date Code (
Y
e
ar & Week)
ZZ =
Lot Code
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface
−
mounted on FR4 board using 1 in
pad size, 1 oz Cu pad.
2. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
June, 2021
−
Rev. 1
NTMFSC2D9N08H/D
NTMFSC2D9N08H
THERMAL CHARACTERISTICS
Symbol
Parameter
Max
0.9
1.4
39
Unit
°
C/W
R
q
JC
R
R
q
JT
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
80
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/ T
J
58
mV/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
I
T =
25
°
C
10
m
A
DSS
J
V
= 0 V
,
GS
DS
V
= 80 V
T =
125
°
C
J
100
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
= 20 V
nA
GSS
DS
GS
V
V
= V
, I
= 250
m
A
2.0
4.0
V
GS(TH)
GS
DS
D
/ T
Negative Threshold
T
e
mperature
Coefficient
V
−
7.3
mV/
°
C
GS(TH)
J
I
D
= 250
m
A, ref to 25
°
C
Drain
−
to
−
Source On Resistance
R
V
= 10 V, I
= 50 A
2.2
3.1
294
1
2.9
4.4
m
W
DS(on)
GS
D
V
= 6
V
, I
= 25 A
D
GS
DS
GS
Forward Trans
–
conductance
Gate
−
Resistance
g
FS
V
= 15V, I
= 50 A
S
D
R
V
= 0
V
, f = 1
M
Hz
2.6
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
4380
610
16
pF
ISS
V
= 0
V
, f = 1
M
Hz,
DS
GS
Output Capacitance
C
OSS
RSS
V
= 40 V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
Q
68
nC
nC
nC
ns
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Output Charge
Q
11.8
19
G(TH)
V
GS
= 10
V
, V
=
4
0
V
, I
=
5
0 A
DS D
Q
GS
Q
15
GD
Q
V
DD
= 40
V
, V
= 0 V
108
OSS
GS
Turn
−
On Delay Time
Rise Time
t
20.5
14
d(ON)
t
r
V
= 10
V
, V
=
4
0 V
,
DS
GS
I
D
= 50 A, R
= 2.5
W
G
Turn
−
Off Delay Time
Fall Time
t
42
d(OFF)
t
f
9.5
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.80
0.65
64
1.2
V
SD
J
V
= 0
V
,
GS
S
I
= 50 A
T =
150
°
C
J
Reverse Recovery Time
t
ns
RR
V
GS
= 0
V
,
d
I
/dt = 100 A/
m
s,
S
I
S
= 50 A
Reverse Recovery Charge
Q
81
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching
characteristics are independent of operating junction temperatures.
2
NTMFSC2D9N08H
TYPICAL CHARACTERISTICS
300
300
225
150
5.5 V
V
DS
= 5 V
240
180
120
5.0 V
V
GS
= 12 V to 6 V
T =
25
°
C
T =
150
°
C
J
J
4.5 V
4.0 V
75
0
60
0
T =
175
°
C
J
T =
−
55
°
C
J
0
1
2
3
4
5
2
3
4
5
6
7
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
70
56
42
28
6
T =
25
°
C
D
J
V
= 6 V
GS
I
= 50 A
3
0
V
GS
= 10 V
14
0
4
5
6
7
8
9
10
0
60
120
180
240
300
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
2.4
1E
−
03
1E
−
04
1E
−
05
1E
−
06
1E
−
07
V
= 10 V
= 50 A
GS
T =
175
°
C
J
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
T =
150
°
C
J
T =
125
°
C
J
T =
25
°
C
J
1E
−
08
1E
−
09
−
75
−
50
−
25
0
25 50 75
100 125
150 175
20
30
40
50
60
70
80
T , JUNCTION TEMPERATURE (
°
C)
J
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTMFSC2D9N08H
TYPICAL CHARACTERISTICS
10K
1K
10
V
= 40 V
DD
C
ISS
8
6
4
C
OSS
Q
Q
GD
GS
100
C
RSS
10
1
V
= 0 V
GS
2
0
T =
25
°
C
J
f = 1 MHz
0.1
1
10
100
0
14
28
42
56
70
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source Voltage vs. Total
Charge
100
10
1
1000
100
V
GS
= 0 V
t
d(off)
t
d(on)
T =
175
°
C
J
0.1
t
r
10
1
t
f
T =
25
°
C
V
V
= 10 V
= 40 V
= 50 A
J
GS
0.01
DS
I
D
T =
125
°
C
T =
−
55
°
C
J
J
0.001
1
10
R ,
GATE RESISTANCE (
W
)
0
0.2
0.4
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
0.6
0.8
1.0
1.2
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
2000
1000
1000
100
100
10
1
10
m
s
100
m
s
T
= 25
°
C
J(initial)
T
= 25
°
C
C
1 ms
10 ms
Single Pulse
= 0.9
°
C/W
10
1
T
= 150
°
C
R
J(initial)
q
JC
R
Limit
DS(on)
100 ms/DC
0.1
Thermal Limit
Package Limit
0.01
0.1
1
10
100
0.001 0.01
0.1
1
10
100
1000
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
t ,
TIME IN AVALANCHE (mS)
AV
Figure 11. Forward Bias Safe Operating Area
Figure 12. Unclamped Inductive Switching
Capability
4
NTMFSC2D9N08H
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
P
DM
Notes:
= 0.9
°
C/W
0.01 0.01
Single Pulse
R
q
JC
Peak T
= P
Duty Cycle, D = t
/ t
x Z
(t) + T
q
JC C
t
1
J
DM
1
2
t
2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
ORDERING INFORMATION
Device
†
Device Marking
Package
Shipping
NTMFSC2D9N08H
2D9N08
DFN8
3000 /
T
a
pe & Reel
(Pb
−
Free/Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
NTMFSC2D9N08H
PACKAGE DIMENSIONS
DFN8 5×6.15, 1.27
P
,
D
UAL COOL
CASE 506EG
ISSUE D
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other coun-
tries.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
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−
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−
9855
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o
ll Free USA/Canada
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