onsemi-NTMJS1D2N04CLTWG
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NTMJS1D2N04CL
Power MOSFET
40
V
,
1
.2 m
W
, 237 A, Single N
−
Channel
Features
•
Small Footprint (5×6 mm) for Compact Design
•
Low R
to Minimize Conduction Losses
•
Low Q
and Capacitance to Minimize Driver Losses
DS(on)
G
•
LFPAK8 Package, Industry Standard
•
These Devices are Pb
−
Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1.2 m
W
@ 10 V
1.8 m
W
@ 4.5 V
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
40 V
237 A
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
40
Unit
V
V
DSS
D (5,8)
Gate
−
to
−
Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25
°
C
= 100
°
C
= 25
°
C
I
237
168
128
64
A
C
D
q
JC
T
C
Steady
State
Power Dissipation
T
C
P
W
A
G (4)
D
R
q
JC
T
C
= 100
°
C
S (1,2,3)
N
−
CHANNEL MOSFET
Continuous Drain
Current R
T =
25
°
C
A
I
D
41
q
JA
T =
100
°
C
A
29
Steady
State
Power Dissipation
T =
25
°
C
A
P
3.8
1.9
1480
W
D
R
q
JA
MARKING
DIAGRAM
T =
100
°
C
A
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
A
A
p
D
D
D
D
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+ 175
°
C
J
stg
1D2N04
CL
AWLYW
Source Current (Body Diode)
I
107
453
A
S
LFPAK8
CASE 760AA
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
Energy (I
= 19 A)
L(pk)
1
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
S
S
S
G
1D2N04CL = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
WL
Y
= Assembly Location
= Wafer Lot
=
Y
e
ar
THERMAL RESISTANCE MAXIMUM RATINGS
W
= Work Week
Parameter
Symbol
Value
1.2
Unit
Junction
−
to
−
Case
−
Steady State
R
°
C/W
q
JC
ORDERING INFORMATION
R
36
q
JA
See detailed ordering, marking and shipping information on
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface
−
mounted on FR4 board using a 650 mm
, 2 oz. Cu pad.
3. Maximum
current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
December, 2018
−
Rev. 0
NTMJS1D2N04CL/D
NTMJS1D2N04CL
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
40
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
20
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
T =
25
°
C
10
DSS
GS
DS
J
V
= 40 V
m
A
T =
125
°
C
J
250
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
2
0 V
nA
GSS
DS
GS
GS
V
V
= V
, I
= 170
m
A
1.2
2.0
V
mV/
°
C
m
W
m
W
S
GS(TH)
DS
D
Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
Drain
−
to
−
Source On Resistance
Forward Transconductance
V
/T
J
−
5.9
1.5
1
GS(TH)
R
R
V
GS
= 4.5 V
= 10 V
I
I
= 50 A
= 50 A
1.8
1.2
DS(on)
DS(on)
D
V
GS
D
g
FS
V
= 10
V
, I
=
5
0 A
190
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
5600
2600
70
ISS
Output Capacitance
C
V
= 0
V
, f = 1
M
Hz, V
= 25 V
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
Q
Q
V
GS
= 4.5
V
, V
=
2
0 V; I
= 50 A
44
G(TOT)
G(TOT)
DS
D
T
o
tal Gate Charge
V
GS
= 10
V
, V
=
2
0 V; I
= 50 A
93
DS
D
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
9.4
G(TH)
nC
V
Q
17.2
13.6
3.1
GS
GD
GP
V
GS
= 10
V
, V
=
2
0 V; I
= 50 A
DS
D
Q
V
Turn
−
On Delay Time
t
24
72
d(ON)
Rise Time
t
r
V
= 10
V
, V
=
2
0
V
,
DS
GS
D
ns
V
I
= 50 A, R
= 2.5
W
G
Turn
−
Off Delay Time
t
122
116
d(OFF)
Fall Time
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.76
0.66
59
1.2
SD
RR
J
V
S
= 0
V
,
GS
I
= 50 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
t
29
ns
a
V
= 0
V
,
d
IS/dt = 100 A/
m
s,
GS
I
S
= 50 A
Discharge Time
t
30
b
Reverse Recovery Charge
Q
43
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
5. Switching
characteristics are independent of operating junction temperatures.
2
NTMJS1D2N04CL
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
250
V
GS
= 10 V to 3.6 V
V
DS
= 10 V
3.4 V
3.2 V
200
150
100
3.0 V
2.8 V
T =
25
°
C
J
60
40
50
0
20
0
T =
125
°
C
J
T =
−
55
°
C
J
0
1
2
3
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
10
9
2.0
1.5
1.0
T =
25
°
C
J
8
7
6
5
4
3
0.5
0
2
1
0
2.5 3.5
4.5
5.5
6.5
7.5
8.5
9.5
10 30
50
70
90 110
130 150 170 190
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
100K
10K
1.9
1.7
1.5
1.3
1.1
V
I
= 10 V
= 50 A
GS
T =
150
°
C
J
D
T =
125
°
C
J
T =
85
°
C
J
1K
0.9
0.7
100
−
50
−
25
0
25
50
75 100
125 150
175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTMJS1D2N04CL
TYPICAL CHARACTERISTICS
10K
1K
10
C
ISS
8
6
4
C
OSS
Q
Q
GD
GS
100
10
V
= 32 V
= 50 A
DS
V
= 0 V
2
0
GS
C
RSS
I
D
T =
25
°
C
J
T =
25
°
C
J
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
10
20 30 40 50 60 70 80 90
100
Q ,
TOTAL GATE CHARGE (nC)
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source Voltage vs. Total
Charge
t
d(off)
V
GS
V
DS
= 10 V
= 32 V
V
GS
= 0 V
t
f
t
r
10
100
t
d(on)
T =
125
°
C T =
25
°
C
T =
−
55
°
C
J
J
J
10
1
1
10
R ,
GATE RESISTANCE (
W
)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
10
m
s
T
= 25
°
C
J(initial)
Single Pulse
T
V
= 25
°
C
0.5 ms
1 ms
10 ms
T
= 100
°
C
C
J(initial)
≤
10 V
GS
10
1
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
4
NTMJS1D2N04CL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10%
5%
10
1
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMJS1D2N04CLTWG
1D2N04
CL
LFPAK8
(Pb
−
Free)
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK8 5×6
CASE 760AA
ISSUE C
DATE 13 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXX =
Specific Device Code
A
= Assembly Location
WL
Y
W
= Wafer Lot
=
Y
e
ar
= Work Week
XXXXXX
XXXXXX
AWLYW
*This information is generic. Please refer
to device data sheet for actual part
marking. Some products may not follow
the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON82475G
LFPAK8 5×6
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
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onsemi
’s product/patent coverage may be accessed at
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−
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.
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−
is” and
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onsemi
. “Typical” parameters which may be provided in
onsemi
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