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. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
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does not convey any license under any of its intellectual property rights nor the rights of others.
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products are not designed, intended, or authorized
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d
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is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NTMJS1D7N04C
Power MOSFET
40
V
,
1
.7 m
W
, 185 A, Single N
−
Channel
Features
•
Small Footprint (5×6 mm) for Compact Design
•
Low R
to Minimize Conduction Losses
•
Low Q
and Capacitance to Minimize Driver Losses
DS(on)
G
•
LFPAK8 Package, Industry Standard
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Compliant
40 V
1.7 m
W
@ 10 V
185 A
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
40
Unit
V
D (5,8)
V
DSS
Gate
−
to
−
Source Voltage
V
GS
20
V
Continuous Drain
Current R
Steady
State
T
= 25
°
C
= 100
°
C
= 25
°
C
I
185
131
106
53
A
C
D
q
JC
G (4)
T
C
Power Dissipation
T
C
P
W
A
D
S (1,2,3)
N
−
CHANNEL MOSFET
R
q
JC
T
C
= 100
°
C
Continuous Drain
Current R
Steady
State
T =
25
°
C
A
I
D
35
q
JA
T =
100
°
C
A
25
MARKING
DIAGRAM
Power Dissipation
T =
25
°
C
P
3.8
1.9
900
W
A
D
R
q
JA
T =
100
°
C
A
D
D
D
D
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
A
A
p
1D7N04
C
AWLYW
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
°
C
J
stg
+175
LFPAK8
CASE 760AA
Source Current (Body Diode)
I
S
102
338
A
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
1
Energy (I
= 15 A)
S
S
S
G
L(pk)
Lead
T
e
mperature for Soldering Purposes
T
260
°
C
1D7N04C = Specific Device Code
L
(1/8
″
from case for 10 s)
A
WL
Y
= Assembly Location
= Wafer Lot
=
Y
e
ar
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
W
= Work Week
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.4
Unit
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
Junction
−
to
−
Case
−
Steady State
R
°
C/W
q
JC
R
36
q
JA
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface
−
mounted on FR4 board using a 650 mm
, 2 oz. Cu pad.
3. Maximum
current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2019
−
Rev. 1
NTMJS1D7N04C/D
NTMJS1D7N04C
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
40
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
21
mV/
°
C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
T =
25
°
C
10
m
A
DSS
GS
DS
J
V
= 40 V
T =
125
°
C
J
100
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
2
0 V
nA
GSS
DS
GS
GS
V
V
= V
, I
= 130
m
A
2.5
3.5
1.7
V
mV/
°
C
m
W
S
GS(TH)
DS
D
Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
Forward Transconductance
V
/T
J
−
7.8
1.36
130
GS(TH)
R
V
GS
= 10 V
I =
50 A
D
DS(on)
g
FS
V
=15
V
, I
=
5
0 A
DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0
V
, f = 1
M
Hz, V
= 25 V
3300
1600
45
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
V
V
= 10
V
, V
=
2
0 V; I
= 50 A
47
G(TOT)
GS
DS
D
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
= 10
V
, V
=
2
0 V; I
= 50 A
10
G(TH)
GS
DS
D
Q
16
GS
GD
GP
Q
V
7.0
4.7
V
Turn
−
On Delay Time
t
V
= 10
V
, V
=
2
0
V
,
13
48
29
8.0
ns
d(ON)
GS
D
DS
I
= 50 A, R
= 2.5
W
G
Rise Time
t
r
Turn
−
Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0
V
,
T =
25
°
C
0.83
0.7
57
1.2
V
SD
GS
J
I
= 50 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
V
= 0
V
,
d
IS/dt = 100 A/
m
s,
ns
RR
GS
I
S
= 50 A
t
t
30
a
Discharge Time
27
b
Reverse Recovery Charge
Q
68
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
5. Switching
characteristics are independent of operating junction temperatures.
2
NTMJS1D7N04C
TYPICAL CHARACTERISTICS
200
160
120
80
200
V
GS
= 6 V to 10 V
V
DS
= 10 V
5.2 V
4.8 V
175
150
125
100
75
T =
25
°
C
J
4.4 V
4.0 V
50
40
0
25
0
T =
125
°
C
J
T =
−
55
°
C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
7
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
1.60
1.55
1.50
1.45
1.40
1.35
1.30
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
T =
25
°
C
J
T =
25
°
C
D
J
I
= 50 A
V
GS
= 10 V
1.25
1.20
0.5
0
3
4
5
6
7
8
9
10
10
30
50
70
90
110
130
150
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
1.E
−
04
1.E
−
05
V
I
= 10 V
= 50 A
GS
D
T =
150
°
C
J
T =
125
°
C
J
1.E
−
06
1.E
−
07
T =
85
°
C
J
0.8
0.6
−
50
−
25
0
25
50
75
100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTMJS1D7N04C
TYPICAL CHARACTERISTICS
1.E+04
1.E+03
10
9
8
7
6
5
4
3
2
C
ISS
C
OSS
Q
Q
GD
GS
C
RSS
1.E+02
1.E+01
V
DS
= 20 V
V
= 0 V
GS
T =
25
°
C
J
T =
25
°
C
J
1
0
I
D
= 50 A
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
5
10 15 20 25 30 35 40 45 50
Q ,
GATE CHARGE (nC)
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source Voltage vs. Charge
1000
100
100
V
GS
= 0 V
t
r
t
d(off)
10
t
d(on)
10
1
V
V
= 10 V
= 20 V
= 50 A
GS
t
f
DS
I
D
T =
150
°
C
T =
125
°
C
T =
25
°
C T =
−
55
°
C
J J
J
J
1
1
10
R ,
GATE RESISTANCE (
W
)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T =
25
°
C
J
T =
100
°
C
J
10
T
V
= 25
°
C
C
500
m
s
≤
10 V
GS
Single Pulse
1 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
0.1
1
0.1
1
10
100
1E
−
4
1E
−
3
10E
−
2
V
DS
(V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
4
NTMJS1D7N04C
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMJS1D7N04CTWG
1D7N04C
LFPAK8
(Pb
−
Free)
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
NTMJS1D7N04C
PACKAGE DIMENSIONS
LFPAK8 5×6
CASE 760AA
ISSUE A
E2
E
A
A2
c2
B
L1
8
5
D
H
L2
1
4
e
b
(8X)
c
0.25
C A B
e/2
SIDE VIEW
TOP VIEW
H
MILLIMETERS
DIM MIN
NOM MAX
(A3)
C
A
1.10
A1 0.00
1.20
0.08
1.15
0.25 REF
0.50
0.45
0.22
0.22
4.80
1.30
0.15
1.20
A
A4
A2
A3
1.10
0.10 C
q
A1
A4 0.45
0.55
0.50
0.25
0.25
4.90
L
b
c
0.40
0.19
c2 0.19
DETAIL ’A’
4.70
D
E1
4.510
4.060
D1
D2 3.00
D3 0.30
E
E1 3.90
E2 5.00
e
G
H
L
L1 0.15
L2 0.80
q
−
−
3.10
0.40
4.90
4.00
5.15
1.27 BSC
0.65
6.15
0.65
0.25
1.05
4
°
4.20
3.20
0.50
5.00
4.10
5.30
8
5
5
8
0.700
G
4.80
D2
0.595
2.055
D3
D1
0.600
0.700
0.55
6.00
0.40
0.75
6.30
0.85
0.35
1.30
8
°
1.060
1.150
1
4
1
4
0.700
(8X)
0
°
1.270
BOTTOM VIEW
RECOMMENDED MOUNTING
FOOTPRINT
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTMJS1D7N04C/D
