onsemi-NTMS4807NR2G
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NTMS4807N
Power MOSFET
30
V
,
1
4.8 A, N-Channel, SO-8
Features
•
ꢀLow R
to Minimize Conduction Losses
DS(on)
•
ꢀLow Capacitance to Minimize Driver Losses
•
ꢀOptimized Gate Charge to Minimize Switching Losses
•
ꢀThis is a Pb-Free Device
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Applications
6.1 m
W
@ 10 V
7.5 m
W
@ 4.5 V
•
ꢀDisk Drives
•
ꢀDC-DC Converters
•
ꢀPrinters
30 V
14.8 A
N-Channel
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Drain-to-Source Voltage
Symbol Value Unit
D
V
DSS
30
20
V
V
A
Gate-to-Source Voltage
Continuous Drain
V
GS
I
D
T =
25
°
C
12.2
9.8
A
G
Current R
q
JA
T =
70
°
C
A
Power Dissipation R
T =
25
°
C
P
1.55
W
A
q
A
D
JA
JA
S
Continuous Drain
Current R
I
D
T =
25
°
C
A
9.1
7.3
MARKING DIAGRAM/
PIN ASSIGNMENT
q
JA
T =
70
°
C
A
Steady
State
Power Dissipation R
T =
25
°
C
A
P
I
0.86
W
A
q
D
1
8
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
1
Continuous Drain
Current R
, t
v
10 s
T =
25
°
C
A
14.8
11.8
2.3
SO-8
CASE 751
STYLE 12
D
q
JA
T =
70
°
C
A
T
o
p View
Power Dissipation
R
T =
25
°
C
A
P
D
W
q
JA
4807N =
Device Code
A
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
50
A
= Assembly Location
=
Y
e
ar
A
p
Y
Operating Junction and Storage
T
e
mperature
T ,
J
T
stg
-55 to
150
°
C
WW
G
= Work Week
= Pb-Free Package
Source Current (Body Diode)
I
S
2.9
98
A
(Note: Microdot may be in either location)
Single Pulse Drain-to-Source Avalanche Energy
(T =
25
°
C, V
= 30
V
, V
=
1
0
V
,
E
AS
mJ
J
DD
GS
I =
14 A
, L = 1.0 mH, R
= 25
W
)
ORDERING INFORMATION
L
pk
G
†
Device
Package
Shipping
2500/
T
a
pe & Reel
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
NTMS4807NR2G
SO-8
(Pb-Free)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value
Unit
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
°
C/W
Junction-to-Foot (Drain)
R
R
80.5
54.9
19.5
145
q
q
JA
JA
R
q
JF
R
q
JA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted
on FR4 board using 1 in sq pad size.
2. Surfacemounted
on FR4 board using the minimum recommended pad size.
©
ꢀ Semiconductor Components Industries, LLC, 2007
December, 2007 – Rev. 0
1
Publication Order Number:
NTMS4807N/D
NTMS4807N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
D
30
V
(BR)DSS
Drain-to-Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
29
mV/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
I
T =
25
°
C
1.0
10
m
A
DSS
J
V
GS
= 0
V
, V
=
2
4 V
DS
T =
100
°
C
J
Gate-to-Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
GS
20 V
100
nA
GSS
DS
GS
V
V
= V
, I
= 250
m
A
DS D
1.5
3.0
V
GS(TH)
Negative Threshold
T
e
mperature
Coefficient
V
/T
6.0
mV/
°
C
GS(TH)
J
Drain-to-Source On Resistance
R
V
= 10
V
, I
= 14.8 A
D
5.1
6.5
16
6.1
7.5
m
W
S
DS(on)
GS
V
= 4.5 V, I
= 12 A
D
GS
Forward Transconductance
g
FS
V =
1.5
V
, I
=
1
4.8 A
DS D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
C
2900
562
307
24
pF
iss
Output Capacitance
V
GS
= 0
V
, f =
1
.0 MHz, V
= 24 V
DS
oss
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
rss
Q
nC
G(TOT)
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
T
o
tal Gate Charge
Q
3.4
G(TH)
V
= 4.5
V
, V
=
1
5
V
, I
=
1
4.8 A
DS D
GS
Q
7.7
GS
Q
10.4
46
GD
Q
V
= 10
V
, V
=
1
5
V
, I
=
1
4.8 A
DS
nC
ns
G(TOT)
GS
D
Turn-On Delay Time
Rise Time
t
14
6.5
47
17
d(on)
t
r
V
GS
= 10
V
, V
=
1
5
V
,
DS
I
D
= 1.0 A, R
= 6.0
W
G
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.75
0.58
30
1.0
V
SD
J
V
= 0
V
, I
=
2
.9 A
S
GS
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
15
a
V
= 0
V
, d
/
d =
100 A/
m
s,
IS t
GS
I
S
= 2.9 A
Discharge Time
15
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
23
nC
RR
L
T =
25
°
C
0.66
0.20
1.5
nH
nH
nH
W
S
D
G
A
L
T =
25
°
C
A
Gate Inductance
L
T =
25
°
C
A
Gate Resistance
R
T =
25
°
C
A
0.9
1.4
G
3. Pulse
T
e
st: pulse width = 300
m
s, duty cycle
v
2%.
4. Switching
characteristics are independent of operating junction temperatures.
2
NTMS4807N
TYPICAL PERFORMANCE CURVES
35
30
25
20
15
10
5
30
5 V
T =
25
°
C
J
V
DS
≥
10 V
4.5 V
4 V
3.5 V
3.3 V
25
20
15
10
5
T =
100
°
C
J
3.1 V
2.9 V
T =
25
°
C
J
2.5 V
2.7 V
T =
-55
°
C
J
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
1
2
3
4
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.0425
0.0375
0.0325
0.0275
0.0225
0.0175
0.0125
0.0075
0.0025
0.02
0.0175
0.015
0.0125
0.01
T =
25
°
C
J
T =
25
°
C
D
J
I
= 12.2 A
V
= 4 V
GS
0.0075
0.005
0.0025
0
V
GS
= 10 V
2
4
6
8
10
5
10
15
20
25
30
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
1.6
1.4
1.2
1.0
0.8
0.6
1000000
100000
10000
1000
V
= 0 V
I
= 12.2 A
= 10 V
GS
D
V
GS
T =
150
°
C
J
T =
100
°
C
J
100
3
6
9
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
12
15
18
21
24
27
30
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (
°
C)
J
V
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
3
NTMS4807N
TYPICAL PERFORMANCE CURVES
10
20
16
12
8
4200
3500
2800
2100
1400
QT
T =
25
°
C
J
9
C
V
GS
= 0 V
iss
V
8
7
6
5
4
3
2
DS
V
GS
Q
Q
GD
GS
C
oss
4
700
0
I
D
= 14.8 A
1
0
T =
25
°
C
J
C
rss
0
0
5
10
15
20
25
30
0
5
10 15 20 25 30 35 40 45 50
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate-To-Source and
Drain-To-Source Voltage vs. Total Charge
1000
100
10
6
5
4
3
2
V
I
= 24 V
DD
= 6.1 A
= 10 V
V
= 0 V
GS
T =
25
°
C
J
D
V
GS
t
d(off)
t
f
t
r
t
d(on)
1
0
1
10
100
0.4
0.5
0.6
0.7
0.8
R ,
GATE RESISTANCE (OHMS)
G
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
75
100
10
I
D
= 14 A
10
m
s
100
m
s
1 ms
1
50
25
0
10 ms
V
= 20 V
GS
SINGLE PULSE
= 25
°
C
T
C
0.1
0.01
R
LIMIT
dc
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
25
50
75
100
125
150
T , STARTING JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
4
NTMS4807N
PACKAGE DIMENSIONS
SOIC-8
CASE 751-07
ISSUE AJ
NOTES:
1. DIMENSIONING
AND TOLERANCING PER
ANSI Y14.5M, 1982.
-X-
A
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM
MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION
D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751-01
THRU 751-06 ARE OBSOLETE. NEW
STANDARD IS 751-07.
8
5
4
S
M
M
B
0.25 (0.010)
Y
1
K
-Y-
G
MILLIMETERS
DIM MIN
MAX
INCHES
MIN
MAX
0.197
0.157
0.069
0.020
C
N
X 45
_
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
SEATING
PLANE
-Z-
0.10 (0.004)
1.27 BSC
0.050 BSC
M
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
J
H
D
8
0
_
_
_
_
M
S
S
X
0.25 (0.010)
Z
Y
0.25
5.80
0.50 0.010
6.20 0.228
SOLDERING FOOTPRINT*
STYLE 12:
PIN 1.
SOURCE
2. SOURCE
3. SOURCE
4. GATE
1.52
0.060
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make changes without further notice
to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights
nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal
Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800-282-9855
T
o
ll Free
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ꢁPhone: 421 33 790 2910
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ꢁPhone: 81-3-5773-3850
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ꢁ
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.
O. Box 5163, Denver, Colorado 80217 USA
ꢁ
Phone
: 303-675-2175 or 800-344-3860
T
o
ll Free USA/Canada
ꢁ
Fax
: 303-675-2176 or 800-344-3867
T
o
ll Free USA/Canada
ꢁ
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: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTMS4807N/D
