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onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
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d
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N-Channel, SUPERFET
)
III,
FRFET
)
650
V
,
3
6 A, 90 m
W
NTMT090N65S3HF
Description
SUPERFET III MOSFET is ON Semiconductor’s brand
−
new high
voltage super
−
junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on
−
resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power systems for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional components and
improve system reliability.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
90 m
ꢀ
@ 10 V
36 A
D
G
S1: Driver Source
S2: Power Source
The Power88 package is an ultra
−
slim surface
−
mount package
2
(1 mm
high) with a low profile and small footprint (8×8 mm ).
S1
S2
SUPERFET III MOSFET in a Power88 package offers excellent
switching performance due to lower parasitic source inductance and
separated power and drive sources. Power88 offers Moisture
Sensitivity Level 1 (MSL 1).
POWER MOSFET
Features
S2
•
700 V @ T
= 150
°
C
J
S2
S1
•
Typ R
= 75 m
ꢀ
G
DS(on)
•
Ultra Low Gate Charge (Typ. Q
= 66 nC)
Power88
PQFN4 8X8 2P
CASE 483AP
g
•
Low Effective Output Capacitance (Typ. C
•
100% Avalanche Tested
= 569 pF)
oss(eff.)
•
These Devices are Pb
−
Free and are RoHS Compliant
MARKING DIAGRAM
Applications
•
Telecom / Server Power Supplies
•
Industrial Power Supplies
•
UPS / Solar
NTMT090
N65S3HF
AWLYWW
•
Lighting / Charger / Adapter
NTMT090N65S3H
F
=
S
pecific Device Code
A
WL
Y
= Assembly Location
= Wafer Lot
=
Y
e
ar
WW
= Work Week
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
November, 2020
−
Rev. 0
NTMT090N65S3HF/D
NTMT090N65S3HF
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC
30
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T
= 25
°
C)
36
A
C
Continuous (T
= 100
°
C)
22.8
90
C
I
Drain Current
A
mJ
A
DM
E
MOSFET dv/dt
440
AS
AS
I
4.6
E
2.72
100
mJ
V/ns
AR
dv/dt
Power Dissipation
50
P
(T =
25
°
C)
272
W
W/
°
C
°
C
D
C
Derate Above 25
°
C
2.176
−
55 to +150
300
T , T
Operating and Storage
T
e
mperature Range
J
STG
T
Maximum Lead
T
e
mperature for Soldering, 1/8
″
from Case for 5 s
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive
rating: pulse
−
width limited by maximum junction temperature.
2. I
= 4.6 A, R
= 25
ꢀ
starting T
= 25
°
C
AS
G
J
3. I
≤
18 A, di/dt
≤
100 A/
ꢁ
s, V
≤
400
V
,
s
tarting T
= 25
°
C
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.46
45
Unit
Thermal Resistance, Junction to Case, Max.
°
C/W
R
R
ꢂ
JC
JA
ꢂ
2
4. Device
on 1 in
pad 2 oz copper pad on 1.5 x 1.5 in. board of FR
−
4 material.
ORDERING INFORMATION
†
Part Number
Top Marking
Package
Reel Size
Tape Width
13.3 mm
Shipping
NTMT090N65S3HF
NTMT090N65S3HF
Power88
13”
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
2
NTMT090N65S3HF
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
V
V
= 0
V
, I
= 1
m
A, T
= 25
°
C
650
700
−
−
−
−
−
−
V
V
DSS
GS
D
J
= 0
V
, I
= 1
m
A, T
= 150
°
C
GS
D
J
ꢃ
BV
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 10 mA, referenced to 25
°
C
0.63
V/
°
C
DSS
J
/
ꢃ
T
I
Zero Gate Voltage Drain Current
V
V
V
= 650 V, V
= 0 V
−
−
−
−
14
−
10
ꢁ
A
nA
V
DSS
DS
DS
GS
GS
= 520 V, T
= 125
°
C
C
I
Gate to Source Leakage Current
=
30
V
, V
= 0 V
100
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V
, I
= 0.86 mA
3.0
−
−
5.0
90
−
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10
V
, I
=
1
8 A
75
22
m
ꢀ
D
g
= 20
V
, I
=
1
8 A
−
S
FS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400
V
, V
= 0 V, f = 1
M
Hz
−
−
−
−
−
−
−
−
2930
61
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
ꢀ
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
T
o
tal Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400
V
, V
= 0 V
569
110
66
oss(eff.)
GS
C
= 0 V to 400
V
, V
= 0 V
GS
oss(er.)
Q
= 400
V
, I
=
1
8 A, V
= 10 V
D GS
g(tot)
Q
21
gs
Q
25
gd
ESR
f = 1 MHz
1.8
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
V
= 400
V
, I
=
1
8 A,
−
−
−
−
31
19
75
3.1
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10
V
, R
= 4.7
ꢀ
GEN
t
r
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
SOURCE
−
DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
−
36
90
1.3
−
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0
V
, I
=
1
8 A
−
V
GS
SD
t
rr
= 0
V
, I
=
1
8 A,
95
379
ns
nC
GS
SD
di /dt
= 100 A/
ꢁ
s
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially
independent of operating temperature typical characteristics.
3
NTMT090N65S3HF
TYPICAL CHARACTERISTICS
200
100
100
V
GS
=
10.0 V
V
DS
= 20 V
250
m
s Pulse Test
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
150
o
C
10
1
10
25
o
C
o
−
55 C
25
0
m
s Pulse Test
C
= 25
o
C
T
0.1
1
2
3
4
5
6
7
GS
, Gate-Source Voltage[V]
8
9
0.1
1
10
20
V
DS
, Drain
−
Source Voltage[V]
V
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
1000
100
10
0.20
0.15
0.10
0.05
0.00
V
GS
= 0 V
T
C
= 25
o
C
250
m
s Pulse Test
150
o
C
V
GS
= 10 V
1
25
o
C
V
GS
= 20 V
0.1
o
−
55 C
0.01
0.001
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
V
S
,
D
Body Diode Forward Voltage [V]
I
D
, Drain Current [A]
Figure 3. On
−
Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage
Current and Gate Voltage
Variation vs. Source Current and Temperature
10
100000
I
D
= 18 A
10000
1000
100
10
C
iss
8
6
4
2
0
V
DS
= 130 V
V
DS
= 400 V
C
oss
V
GS
= 0 V
f = 1 MHz
C
C
C
= C
+ C
(C =
shorted)
gs gd
ds
C
rss
iss
1
= C
+ C
oss
rss
ds gd
= C
gd
0.1
0
10
20
30
40
50
60
70
0.1
1
10
100
1000
Q
g
, Total Gate Charge [nC]
V
DS
, Drain-Source Volt
a
g
e [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
NTMT090N65S3HF
TYPICAL CHARACTERISTICS
2.5
1.2
1.1
1.0
0.9
0.8
V
GS
= 10 V
I
D
= 18 A
V
GS
= 0 V
I
D
= 15 mA
2.0
1.5
1.0
0.5
0.0
−
50
0
50
100
150
−
50
0
50
100
150
o
o
T
J
, Junction Temperature [
C]
T
J
, Junction Temperature [
C]
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On
−
Resistance Variation vs.
Temperature
40
30
20
10
0
200
100
10
1
30
m
s
100
m
s
1ms
10ms
DC
Operation in This Area
is Limited by R
DS(on)
T
C
= 25
o
C
T
J
= 15
0
o
C
Single Pulse
0.1
25
50
75
100
125
150
1
10
100
1000
o
V
DS
, Drain
−
Source Voltage [V]
T
C
, Case Temperature [
C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
20
15
10
5
0
0
130
260
390
520
650
V
DS
, Drain to Source Voltage [V]
Figure 11. Eoss vs. Drain
−
to
−
Source Voltage
5
NTMT090N65S3HF
TYPICAL CHARACTERISTICS
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
Z
R
(t) = r(t) x R
o
ꢂ
JC
ꢂ
JC
SINGLE PULSE
= 0.46
C/W
ꢂ
JC
Peak T
= P
x Z
(t) + T
J
DM
ꢂ
JC
C
Duty Cycle, D = t
/ t
1
2
0.001
10
−
5
10
−
4
10
−
3
10
−
2
10
−
1
10
0
10
1
10
2
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
6
NTMT090N65S3HF
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
E
AS
+
@
LI
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
7
NTMT090N65S3HF
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
−
dv/dt controlled by R
G
−
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
8
NTMT090N65S3HF
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Com-
ponents Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
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Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
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