onsemi-NTMTS0D4N04CTXG
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N-Channel
40
V
,
0
.45 m
W
, 558 A
NTMTS0D4N04C
Features
•
Small Footprint (8×8 mm) for Compact Design
•
Low R
to Minimize Conduction Losses
DS(on)
•
Low Q
and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
•
Power 88 Package, Industry Standard
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
(BR)DSS
DS(ON)
40 V
0.45 m
W
@ 10 V
558 A
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
D (5
−
8)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate
−
to
−
Source Voltage
V
GS
20
V
G (1)
Continuous Drain
Current R
T
= 25
°
C
= 100
°
C
= 25
°
C
I
558
A
C
D
q
JC
T
C
394.8
244.0
122.0
79.8
56.4
5.0
S (2
−
4)
Steady
State
Power Dissipation
T
C
P
W
A
N
−
CHANNEL MOSFET
D
R
q
JC
T
C
= 100
°
C
Continuous Drain
Current R
T =
25
°
C
A
I
D
q
JA
T =
100
°
C
A
Steady
State
Power Dissipation
T =
25
°
C
A
P
W
D
R
q
JA
T =
100
°
C
A
2.5
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
I
DM
900
A
A
p
DFNW8
CASE 507AP
Operating Junction and Storage
T
e
mperature
T , T
−
55 to
+ 175
°
C
J
stg
Source Current (Body Diode)
I
203.4
4454
A
S
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
MARKING DIAGRAM
Energy (I
= 70 A)
L(pk)
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
XXXXXXXX
AWLYWW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
XXX = Device Code
Parameter
Symbol
Value
0.61
30
Unit
(8 A
−
N characters max)
Junction
−
to
−
Case
−
Steady State
R
°
C/W
q
JC
A
= Assembly Location
WL =
2
−
digit Wafer Lot Code
=
Y
ear Code
WW = Work Week Code
R
q
JA
Y
1. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface
−
mounted on FR4 board using a 650 mm
, 2 oz. Cu pad.
2
3. Maximum
current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
©
Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2020
−
Rev. 5
NTMTS0D4N04C/D
NTMTS0D4N04C
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
40
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/
7.78
(BR)DSS
mV/
°
C
T
J
Zero Gate Voltage Drain Current
I
V
= 0
V
,
T =
25
°
C
10
DSS
GS
DS
J
V
= 40 V
m
A
T =
125
°
C
J
250
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
2
0 V
nA
GSS
DS
GS
GS
V
V
= V
, I
= 250
m
A
2.0
4.0
V
mV/
°
C
m
W
S
GS(TH)
DS
D
Threshold
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
Forward Transconductance
V
/T
J
−
8.49
0.38
300
GS(TH)
R
V
GS
= 10 V
I =
50 A
D
0.45
DS(on)
g
FS
V
=15
V
, I
=
5
0 A
DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
16500
8310
390
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0
V
, f =
0
.1 MHz, V
= 20 V
pF
nC
GS
DS
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
V
= 10
V
, V
=
2
0 V; I
= 50 A
251
G(TOT)
GS
DS
D
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
40.0
62.6
49.0
4.08
0.9
G(TH)
Q
GS
GD
GP
V
GS
= 10
V
, V
=
2
0 V; I
= 50 A
DS D
Q
V
V
Gate Resistance
R
W
G
Turn
−
On Delay Time
t
55.2
50.8
200
d(ON)
Rise Time
t
r
V
= 10
V
, V
=
2
0
V
,
DS
GS
D
ns
V
I
= 50 A, R
= 6
W
G
Turn
−
Off Delay Time
t
d(OFF)
Fall Time
t
78.7
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.75
0.58
120
60
1.2
SD
RR
J
V
S
= 0
V
,
GS
I
= 50 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
t
a
ns
V
= 0
V
,
d
IS/dt = 100 A/
m
s,
GS
I
S
= 50 A
Discharge Time
t
b
60
Reverse Recovery Charge
Q
338
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
5. Switching
characteristics are independent of operating junction temperatures.
2
NTMTS0D4N04C
TYPICAL CHARACTERISTICS
1000
1000
900
800
700
600
500
400
300
V
= 6 V to 10 V
GS
900
800
700
600
500
400
300
200
V
DS
= 10 V
5.2 V
4.8 V
4.6 V
T =
25
°
C
J
200
100
0
4.4 V
100
0
T =
125
°
C
J
T =
−
55
°
C
J
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
1.0
0.8
0.6
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T =
25
°
C
D
J
T =
25
°
C
D
J
I
= 50 A
I
= 50 A
V
GS
= 10 V
0.2
0
0.2
0
4
5
6
7
8
9
10
10
60 110
160 210 260 310 360 410 460
510
I ,
DRAIN CURRENT (A)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
T =
175
°
C
V
= 10 V
= 50 A
J
GS
4E
−
04
4E
−
05
4E
−
06
4E
−
07
I
D
T =
150
°
C
J
1.5
1.0
T =
125
°
C
J
T =
85
°
C
J
0.5
0
T =
25
°
C
J
4E
−
08
4E
−
09
−
50
−
25
0
25
50
75 100 125 150
175
10
15
20
25
30
35
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, REVERSE VOLTAGE (V)
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTMTS0D4N04C
TYPICAL CHARACTERISTICS
10
9
100K
10K
C
8
7
6
5
ISS
C
OSS
Q
Q
GD
GS
4
3
2
1K
V
= 20 V
V
= 0 V
DS
GS
C
T =
25
°
C
RSS
T =
25
°
C
J
J
1
0
I
D
= 50 A
f = 0.1 MHz
100
0
50
100
150
200
250
0.01
0.1
1
10
100
Q ,
TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source Voltage vs. Total
Charge
1E
−
05
1E
−
06
V
V
= 10 V
= 20 V
= 50 A
V
GS
= 0 V
GS
DS
I
D
30.1
20.1
t
t
d(off)
t
f
t
r
d(on)
1E
−
07
1E
−
08
T =
125
°
C
T =
25
°
C
J
J
10.1
0.1
T =
−
55
°
C
J
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1.0
1.2
R ,
GATE RESISTANCE (
W
)
G
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
10
m
s
T
= 25
°
C
J(initial)
0.5 ms
1 ms
T
= 100
°
C
J(initial)
T
C
= 25
°
C
Single Pulse
≤
10 V
10
1
10 ms
V
GS
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
0.00001
0.0001
0.001
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
4
NTMTS0D4N04C
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMTS0D4N04CTXG
0D4N04C
POWER 88
(Pb
−
Free)
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TDFNW8 8.3×8.4, 2.0
P
,
S
INGLE COOL
CASE 507AP
ISSUE D
DATE 29 MAR 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
A
= Assembly Location
WL =
Wafer Lot Code
=
Y
ear Code
Y
WW =
Work Week Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON80534G
TDFNW8 8.3×8.4, 2.0
P
,
S
INGLE COOL
PAGE 1 OF 1
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