onsemi-NTP2955G
| Part # | onsemi-NTP2955G |
Download  | onsemi-NTP2955G |
NTP2955
P-Channel, TO-220
-60
V
,
–
12 A
Features
•
Low R
DS(on)
•
Rugged Performance
•
Fast Switching
V
R
Typ
I MAX
D
(BR)DSS
DS(on)
−
60 V
156 m
W
@
−
10 V
−
12 A
•
These are Pb
−
Free Devices*
P
−
Channel
Applications
•
Industrial
•
Automotive
•
Power Supplies
D
G
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
S
Parameter
Drain
−
to
−
Source Voltage
Symbol Value
Unit
V
MARKING DIAGRAM &
PIN ASSIGNMENT
V
DSS
−
60
20
Gate
−
to
−
Source Voltage
V
GS
V
D
Continuous Drain
Steady
State
T
T
T
= 25
°
C
= 85
°
C
= 25
°
C
I
−
12
−
9.0
62.5
A
C
C
C
D
Power Dissipation
P
W
A
D
NT2955G
AYWW
Continuous Drain
Steady T
= 25
°
C
State
I
D
−
2.4
−
1.8
2.4
A
T =
85
°
C
A
1
Power Dissipation
T =
25
°
C
A
P
W
D
2
3
1
TO
−
220
CASE 221A
STYLE 5
Pulsed Drain Current
t =
10
m
s
I
−
42
A
p
DM
G
D S
Operating Junction and Storage
T
e
mperature
T ,
−
55 to
175
°
C
J
T
STG
Source Current (Body Diode)
I
−
12
A
S
A
Y
WW
G
= Assembly Location
=
Y
e
ar
= Work Week
Single Pulse Drain
−
to
−
Source Avalanche
Energy (V
=
−
30
V
, V
=
−
10
V
,
EAS
216
mJ
DD
G
I
PK
=
−
12 A, L = 3.0 mH, R
= 3.0
W
)
= Pb
−
Free Package
G
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
ORDERING INFORMATION
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
2.4
Unit
Device
Package
Shipping
Junction
−
to
−
Case
R
°
C/W
q
JC
NTP2955G
TO
−
220
50 Units / Rail
(Pb
−
Free)
R
62.5
q
JA
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
June, 2019
−
Rev. 3
N
TP2955/D
NTP2955
1. When
surface mounted to an FR4 board using 1 in pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
2
NTP2955
ELECTRICAL CHARACTERISTICS
(T =25
°
C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
−
250
m
A
−
60
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
67
mV/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
I
T =
25
°
C
−
1.0
−
10
100
m
A
DSS
J
V
DS
= 0
V
,
GS
V
=
−
48 V
T =
125
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
20 V
nA
GSS
DS
GS
V
V
= V
, I
=
−
250
m
A
−
2.0
−
4.0
V
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature
Coefficient
V
/T
56
mV/
°
C
GS(TH)
J
Drain
−
to
−
Source On Resistance
R
156
6.0
196
V
=
−
10 V, I
=
−
12 A
D
m
W
DS(on)
GS
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
=
−
60 V, I
=
−
12 A
S
DS
D
C
507
150
48
700
250
98
pF
nC
ISS
V
GS
= 0
V
, f =
1
.0 MHz,
Output Capacitance
C
C
OSS
RSS
V
DS
=
−
25 V
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
14
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
1.6
3.4
6.2
2.5
G(TH)
V
V
=
−
10
V
, V
=
−
48 V,
DS
GS
I
=
−
12 A
D
Q
GS
Q
GD
Turn
−
On Delay Time
Rise Time
t
10
41
27
45
20
80
47
85
ns
d(on)
t
r
=
−
10 V, V
=
−
30 V,
GS
DD
I
D
=
−
12 A, R
= 9.1
W
G
Turn
−
Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
−
1.6
−
1.36
53
−
2.0
V
SD
RR
J
V
S
= 0
V
,
GS
I =
−
12 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
t
42
ns
a
V
= 0
V
, dI
/dt = 100 A/
m
s,
S
GS
I =
−
12 A
S
Discharge Time
t
12
b
Reverse Recovery Charge
Q
126
nC
RR
2. Pulse
T
e
st: pulse width
≤
300
m
s, duty cycle
≤
2%.
3. Switching
characteristics are independent of operating junction temperatures.
3
NTP2955
25
20
15
10
5
25
T =
25
°
C
V
GS
=
−
10 V
J
−
8.0 V
−
7.0 V
V
=
−
10 V
GS
T =
25
°
C
J
20
15
10
5
−
9.5 V
T =
125
°
C
J
−
6.0 V
−
5.5 V
T =
−
55
°
C
J
.
−
5.0 V
−
4.5 V
−
4.0 V
0
0
0
0
2
4
6
8
10
2
4
6
8
10
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (V)
GS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.4
0.3
0.2
0.1
0
0.4
0.3
0.2
0.1
0
V
GS
=
−
10 V
T =
25
°
C
J
T = 125
°
C
V
V
=
−
10 V
=
−
15 V
T = 25
°
C
GS
T =
−
55
°
C
GS
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
−
I ,
DRAIN CURRENT (A)
D
−
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance versus Drain Current
Figure 4. On
−
Resistance versus Drain Current
and Temperature
and Gate Voltage
1000
100
10
2.5
2.0
1.5
1.0
0.5
0
I
=
−
12 A
=
−
10 V
D
V
GS
= 0 V
V
GS
T =
125
°
C
J
T =
100
°
C
J
1
−
50
−
25
0
25
50
75 100
125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (
°
C)
J
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation
Figure 6. Drain
−
to
−
Source Leakage
with Temperature
versus Voltage
4
NTP2955
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
60
50
12
T =
25
°
C
I =
−
12 A
D
V
=
−
0 V
T =
25
°
C
J
GS
J
C
ISS
Q
T
10
8
V
DS
40
30
20
10
0
C
Q
RSS
GD
Q
GS
6
C
ISS
V
GS
4
C
OSS
2
C
RSS
V
=
−
0 V
DS
0
−
10
−
5
−
V
0
5
10
15
20
25
0
4
8
12
16
−
V
DS
Q ,
TOTAL GATE CHARGE, (nC)
GS
G
GATE
−
TO
−
SOURCE OR DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage versus Total Charge
Figure 7. Capacitance Variation
14
12
10
8
1000
100
10
V
=
−
0 V
GS
V
I
=
−
30 V
=
−
12 A
=
−
10 V
DD
T =
25
°
C
J
D
V
GS
t
r
t
f
t
d(off)
6
t
d(on)
4
2
0
1
0
0.25 0.5
0.75 1.0
1.25 1.5
1.75 2.0
1
10
R ,
GATE RESISTANCE (
W
)
100
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
1000
100
10
250
200
150
100
50
I =
−
12 A
D
V
=
−
10 V
GS
SINGLE PULSE
T =
25
°
C
J
100
m
s
1 ms
10
m
s
10 ms
dc
1
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0
25
0.1
0.1
1.0
10
100
50
75
100
125
150
175
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
T , STARTING JUNCTION TEMPERATURE (
°
C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy
versus Starting Junction Temperature
5
NTP2955
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
09
ISSUE AH
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−
T
−
C
S
B
F
T
INCHES
DIM MIN
MAX
MILLIMETERS
4
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.53
4.83
0.96
4.09
2.66
4.10
0.61
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
0.620
0.415
0.190
0.038
0.161
0.105
0.161
0.024
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
J
V
G
U
V
Z
D
0.080
2.04
N
STYLE 5:
PIN 1.
GATE
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and the
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−
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. SCILLC
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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and/or specifications can and do vary in different applications and actual performance may vary over time.
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T
:
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NTP2955/D
