onsemi-NTP6412ANG
| Part # | onsemi-NTP6412ANG |
Download  | onsemi-NTP6412ANG |
NTB6412AN, NTP6412AN,
NVB6412AN
N-Channel Power MOSFET
100
V
,
5
8 A, 18.2 m
W
Features
•
Low R
DS(on)
•
High Current Capability
•
100% Avalanche Tested
I
D
MAX
V
R
MAX
DS(ON)
(Note 1)
•
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
(BR)DSS
100 V
18.2 m
W
@ 10 V
58 A
•
These Devices are Pb−Free and are RoHS Compliant
N−Channel
D
MAXIMUM RATINGS
(T =
25
°
C Unless otherwise specified)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Symbol Value
Unit
V
V
100
$
20
58
DSS
G
V
V
GS
Continuous Drain Cur-
Steady
T
C
= 25
°
C
= 100
°
C
= 25
°
C
I
D
A
rent R
State
q
JC
S
T
C
41
4
Power Dissipation
R
Steady
State
T
C
P
D
167
W
q
JC
4
Pulsed Drain Current
t =
10
m
s
p
I
240
A
DM
1
2
Operating Junction and Storage
T
e
mperature
Range
T , T
−55 to
+175
°
C
J
stg
3
Source Current (Body Diode)
I
S
58
A
2
TO−220AB
D PAK
CASE 221A
STYLE 5
CASE 418B
STYLE 2
Single Pulse Drain−to−Source Avalanche
E
AS
300
mJ
1
Energy (V
= 50 Vdc, V
= 10 Vdc,
DD
GS
2
I
= 44.7 A, L = 0.3 mH, R
= 25
W
)
3
L(pk)
G
Lead
T
e
mperature for Soldering
Purposes, 1/8
″
from Case for 10 Seconds
T
260
°
C
L
MARKING DIAGRAM
& PIN ASSIGNMENT
4
THERMAL RESISTANCE RATINGS
Parameter
4
Drain
Drain
Symbol
Max
0.9
33
Unit
Junction−to−Case (Drain) Steady State
R
°
C/W
q
JC
JA
NTB
R
q
NTP
6412ANG
AYWW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface
mounted on FR4 board using 1 sq in pad size,
6412ANG
AYWW
2
1
Gate
3
1
Gate
3
Drain
(Cu Area 1.127 sq in [2 oz] including traces).
Source
Source
2
6412AN = Specific Device Code
Drain
G
A
Y
= Pb−Free Device
= Assembly Location
=
Y
e
ar
WW =
Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
January, 2015 − Rev. 2
NTB6412AN/D
NTB6412AN, NTP6412AN, NVB6412AN
ELECTRICAL CHARACTERISTICS
(T =
25
°
C Unless otherwise specified)
J
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Symbol
Test Condition
Min
Typ
Max
Unit
V
V
= 0
V
, I
=
2
50
m
A
100
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
T
e
mper-
ature Coefficient
V
/T
J
103
mV/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
= 0
V
,
= 100 V
T =
25
°
C
1.0
100
m
A
DSS
GS
J
V
DS
T =
125
°
C
J
Gate−to−Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
$
20 V
$
100
nA
GSS
DS
GS
V
GS(th)
V
= V
, I
= 250
m
A
2.0
4.0
V
GS
DS
D
Negative Threshold
T
e
mperature Coefficient
Drain−to−Source On−Resistance
V
/T
9.2
16.8
15.6
31
mV/
°
C
m
W
GS(th)
J
R
V
= 10
V
, I
=
5
8 A
18.2
18.2
DS(on)
GS
D
V
GS
= 10
V
, I
=
2
0 A
D
Forward Transconductance
g
FS
V
= 5
V
, I
=
2
0 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
2700
400
150
73
3500
500
pF
iss
V
DS
= 25
V
, V
= 0 V,
f = 1 MHz
GS
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
oss
C
rss
Q
100
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
2.5
G(TH)
V
GS
= 10
V
, V
=
8
0
V
,
DS
Q
13.5
35
GS
GD
GP
I
D
= 58 A
Q
V
5.6
V
Gate Resistance
R
2.2
W
G
GS
Turn−On Delay Time
Rise Time
t
16
140
70
ns
d(on)
t
r
V
I
= 10
V
, V
=
8
0
V
,
DD
GS
= 58 A, R
= 6.2
W
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
126
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.96
0.89
85
1.3
V
SD
J
I
S
= 58 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
ns
rr
t
60
a
V
GS
= 0
V
, I
=
5
8 A,
S
dI /dt
= 100 A/
m
s
SD
Discharge Time
t
b
25
Reverse Recovery Charge
Q
270
nC
RR
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
3. Switching
characteristics are independent of operating junction temperatures.
2
NTB6412AN, NTP6412AN, NVB6412AN
120
100
80
60
40
20
0
120
V
DS
w
10 V
T =
25
°
C
J
7.5 V
6.5 V
100
80
60
40
20
0
10 V
6.0 V
T =
25
°
C
5.4 V
5.0 V
= 4.4 V
J
T =
125
°
C
J
V
GS
T =
−55
°
C
J
0
1
2
3
4
5
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
0.04
0.03
0.02
0.01
0.06
0.05
0.04
0.03
0.02
0.01
0
I
= 58 A
D
V
GS
= 10 V
T =
25
°
C
J
T =
175
°
C
J
T =
125
°
C
J
T =
25
°
C
J
T =
−55
°
C
J
5
6
7
8
9
10
10
20
30
40
50
60
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On−Region versus Gate Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
3
2.5
2
100000
10000
1000
V
GS
= 0 V
I
= 58 A
= 10 V
D
V
GS
T =
150
°
C
J
1.5
1
T =
125
°
C
J
0.5
100
−50 −25
0
25
50
75
100 125 150 175
10
20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
versus Voltage
Temperature
3
NTB6412AN, NTP6412AN, NVB6412AN
10
5000
4000
3000
2000
1000
0
100
80
60
40
20
0
Q
T = 25
°
C
GS
T
J
V
= 0 V
8
6
4
2
0
V
GS
V
DS
Q
Q
gd
gs
C
iss
V
= 80
V
= 58 A
DS
I
D
C
oss
T =
25
°
C
J
C
rss
0
10 20 30 40 50 60 70 80 90 100
, DRAIN−TO−SOURCE VOLTAGE (V)
0
10
20
30
40
50
60
70
V
DS
Q ,
TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage
versus Total Charge
1000
100
10
60
V
I
= 80 V
= 58 A
= 10 V
T =
25
°
C
GS
DS
J
V
= 0 V
D
50
40
30
20
10
0
V
GS
t
f
t
r
t
d(off)
t
d(on)
1
1
10
R ,
GATE RESISTANCE (
W
)
100
0.5
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
1000
100
10
300
200
100
0
I
D
= 44.7 A
10
m
s
100
m
s
1 ms
10 ms
dc
1
R
LIMIT
DS(on)
V
GS
= 10 V
THERMAL LIMIT
PACKAGE LIMIT
SINGLE PULSE
T
C
= 25
°
C
0.1
1
10
100
1000
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
4
NTB6412AN, NTP6412AN, NVB6412AN
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Device
†
Package
Shipping
2
NTB6412ANG
D PAK
50 Units / Rail
800 /
T
a
pe & Reel
50 Units / Rail
(Pb−Free)
2
NTB6412ANT4G
NTP6412ANG
D PAK
(Pb−Free)
TO−220
(Pb−Free)
2
NVB6412ANT4G
D PAK
800 /
T
a
pe & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
09
ISSUE AJ
DATE 05 NOV 2019
SCALE 1:1
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
STYLE 2:
PIN 1.
BASE
2. EMITTER
STYLE 3:
STYLE 4:
PIN 1.
MAIN TERMINAL 1
PIN 1.
CATHODE
2. ANODE
3. GATE
2. MAIN
TERMINAL 2
3. GATE
3. EMITTER
3. COLLECTOR
4. EMITTER
4. COLLECTOR
4. ANODE
4. MAIN
TERMINAL 2
STYLE 5:
PIN 1.
GATE
STYLE 6:
PIN 1.
ANODE
STYLE 7:
STYLE 8:
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. ANODE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
3. CATHODE
4. ANODE
3. EXTERNAL
TRIP/DELAY
4. ANODE
4. CATHODE
STYLE 9:
PIN 1.
GATE
STYLE 10:
PIN 1.
GATE
STYLE 11:
STYLE 12:
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
2. COLLECTOR
3. EMITTER
2. SOURCE
3. DRAIN
4. COLLECTOR
4. SOURCE
4. SOURCE
4. NOT
CONNECTED
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO
−
220
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D
2
PAK 3
CASE 418B
−
04
ISSUE L
DATE 17 FEB 2015
SCALE 1:1
NOTES:
1. DIMENSIONING
AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING
DIMENSION: INCH.
3. 418B
−
01 THRU 418B
−
03 OBSOLETE,
NEW STANDARD 418B
−
04.
E
V
W
−
B
−
INCHES
DIM MIN
MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−
T
−
SEATING
PLANE
K
W
J
K
L
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055
M
N
P
R
S
V
H
D
3 PL
M
M
T B
0.13 (0.005)
1.14
1.40
VARIABLE
CONFIGURATION
ZONE
N
P
R
U
L
L
L
M
M
M
F
F
F
VIEW W
−
W
VIEW W
−
W
VIEW W
−
W
1
2
3
STYLE 1:
STYLE 2:
STYLE 3:
STYLE 4:
STYLE 5:
PIN 1.
CATHODE
2. ANODE
STYLE 6:
PIN 1.
NO CONNECT
2. CATHODE
PIN 1.
BASE
PIN 1.
GATE
PIN 1.
ANODE
2. CATHODE
3. ANODE
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2. DRAIN
3. SOURCE
4. DRAIN
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3. CATHODE
4. ANODE
3. ANODE
4. CATHODE
4. CATHODE
MARKING INFORMATION AND FOOTPRINT ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D
2
PAK 3
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
D
2
PAK 3
CASE 418B
−
04
ISSUE L
DATE 17 FEB 2015
GENERIC
MARKING DIAGRAM*
xx
xxxxxxxxx
AWLYWWG
AYWW
xxxxxxxxG
AKA
xxxxxxxxG
AYWW
IC
Standard
Rectifier
xx
A
WL
Y
= Specific Device Code
= Assembly Location
= Wafer Lot
=
Y
e
ar
WW
G
AKA
= Work Week
= Pb
−
Free Package
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.
2
5
X
04
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D
2
PAK 3
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
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−
282
−
9855
T
o
ll Free USA/Canada
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