onsemi-NTPF190N65S3HF
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N-Channel, SUPERFE
T
I
II,
FRFET
650
V
,
2
0 A, 190 m
W
NTPF190N65S3HF
Description
SUPERFET III MOSFET is ON Semiconductor’s brand
−
new high
voltage super
−
junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on
−
resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
190 m
W
@ 10 V
20 A
D
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
G
S
Features
POWER MOSFET
•
700 V @ T
= 150
°
C
J
•
Typ. R
= 152 m
W
DS(on)
•
Ultra Low Gate Charge (Typ. Q
= 34 nC)
g
•
Low Effective Output Capacitance (Typ. C
•
100% Avalanche Tested
•
These Devices are Pb
−
Free and are RoHS Compliant
= 316 pF)
oss(eff.)
G
D
S
Applications
TO
−
220 FULLPAK
CASE 221D
•
Computing / Display Power Supplies
•
Telecom / Server Power Supplies
•
Industrial Power Supplies
MARKING DIAGRAM
•
Lighting / Charger / Adapter
$Y&Z&3&K
NTPF190
N65S3HF
$Y
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
&Z
&3
&K
NTPF190N65S3HF = Specific Device Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
September, 2019
−
Rev. 2
NTPF190N65S3HF/D
NTPF190N65S3HF
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
−
DC
30
V
−
AC (f > 1 Hz)
30
I
D
Drain Current
−
Continuous (T
= 25
°
C)
20*
A
C
−
Continuous (T
= 100
°
C)
12.7*
50*
C
I
Drain Current
A
mJ
A
DM
E
MOSFET dv/dt
220
AS
AS
I
3.7
E
0.36
100
mJ
V/ns
AR
dv/dt
Power Dissipation
50
P
(T =
25
°
C)
36
W
W/
°
C
°
C
D
C
−
Derate Above 25
°
C
0.29
−
55 to +150
300
T , T
Operating and Storage
T
e
mperature Range
J
STG
T
Maximum Lead
T
e
mperature for Soldering, 1/8
″
from Case for 5 seconds
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature
.
1. Repetitive
rating: pulse
−
width limited by maximum junction temperature.
2. I
= 3.7 A, R
= 25
W
, starting T
= 25
°
C.
AS
G
J
3. I
≤
10 A, di/dt
≤
200 A/
m
s, V
≤
400
V
,
s
tarting T
= 25
°
C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
3.5
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_
C/W
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
TO
−
220
FULLPACK
NTPF190N65S3HF
NTPF190N65S3HF
Tube
N/A
50 Units
2
NTPF190N65S3HF
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
= 0
V
, I
= 1 mA, T
= 25
_
C
DSS
GS
D
J
V
I
= 0
V
, I
= 1 mA, T
= 150
_
C
GS
D
J
D
BV
/
D
T
Breakdown Voltage
T
e
mperature
Coefficient
0.65
65
V/
_
C
DSS
J
= 10 mA, Referenced to 25
_
C
D
I
Zero Gate Voltage Drain Current
V
DS
= 650
V
, V
= 0 V
10
m
A
DSS
GS
V
= 520
V
, T
=
1
25
_
C
DS
C
I
Gate to Body Leakage Current
V
=
30
V
, V
= 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
= V
, I
= 0.43 mA
3.0
5.0
V
m
W
S
GS(th)
DS(on)
GS
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
V
= 10
V
, I
=
1
0 A
152
11
190
GS
DS
D
g
FS
= 20
V
, I
=
1
0 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
1610
30
pF
pF
pF
pF
nC
nC
nC
W
iss
V
= 400
V
, V
= 0 V, f = 1
M
Hz
GS
DS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
T
o
tal Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
V
= 0 V to 400 V, V
= 0 V
316
59
oss(eff.)
DS
GS
C
= 0 V to 400 V, V
= 0 V
GS
oss(er.)
DS
Q
34
g(tot)
V
DS
= 400
V
, I
=
1
0 A, V
= 10 V
D
GS
Q
11
gs
Q
13
gd
ESR
f = 1 MHz
6.8
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
19
19
58
14
ns
ns
ns
ns
d(on)
V
= 400
V
, I
=
1
0 A,
D
t
r
DD
GS
V
= 10
V
, R
=
4
.7
W
g
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
Source to Drain Diode Forward
20
50
A
A
V
S
I
SM
V
SD
1.3
V
GS
= 0
V
, I
=
1
0 A
SD
Voltage
t
Reverse Recovery Time
Reverse Recovery Charge
80
ns
rr
V
DD
= 400
V
, I
=
1
0 A,
SD
F
dI /dt
= 100 A/
m
s
Q
264
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially
independent of operating temperature typical characteristics.
3
NTPF190N65S3HF
TYPICAL CHARACTERISTICS
80
10
50
V
GS
= 10 V
250
m
s Pulse
T
e
st
= 25
°
C
V
= 20 V
DS
8.0 V
T
250
m
s Pulse
T
e
st
C
7.0 V
6.5 V
6.0 V
10
5.5 V
1
T =
25
°
C
J
T =
150
°
C
J
T =
−
55
°
C
J
0.1
1
0.2
1
10
20
3
0
0
4
5
6
7
8
9
V
, DRAIN
−
SOURCE VOLTAGE (V)
V
, GATE
−
TO
−
SOURCE VOLTAGE (V)
DS
GS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.5
0.4
0.3
100
10
1
V
= 0 V
250
m
s Pulse
T
e
st
GS
T
= 25
°
C
C
T =
150
°
C
J
V
GS
= 10 V
V
T =
25
°
C
J
0.1
= 20 V
GS
0.2
0.1
0.01
T =
−
55
°
C
J
0.001
0
15
30
I ,
DRAIN CURRENT (A)
45
60
0.5
, BODY DIODE FORWARD VOLTAGE (V)
SD
1.0
1.5
2.0
V
D
Figure 3. On
−
Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Current and Gate Voltage
100K
10K
1K
10
8
V
= 130 V
DD
I
D
= 10 A
V
= 400 V
DD
C
iss
6
100
10
C
oss
V
= 0 V
f = 1 MHz
GS
4
C
rss
C
C
C
= C
+ C
(C =
shorted)
gs gd
ds
iss
2
0
1
= C
+ C
oss
rss
ds
gd
= C
gd
0.1
0.1
1
10
100
1K
8
16
24
32
40
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
NTPF190N65S3HF
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
V
I
= 0 V
= 10 mA
I
V
= 10 A
GS
D
= 10 V
D
2.5
2.0
1.5
1.0
GS
0.9
0.8
0.5
0
−
50
0
50
100
150
−
50
0
50
100
150
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On
−
Resistance Variation vs.
Temperature
100
20
15
10
10
m
s
10
1
100
m
s
1 ms
Operation in this Area
is Limited by R
DS(on)
10 ms
0.1
5
0
T
= 25
°
C
C
T =
150
°
C
J
DC
Single Pulse
0.01
1
10
100
1000
25
50
75
100
125
150
V
DS
, DRAIN
−
SOURCE VOLTAGE (V)
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
10
8
6
4
2
0
0
130
260
390
520
650
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 11. E
OSS
vs. Drain
−
to
−
Source Voltage
5
NTPF190N65S3HF
TYPICAL CHARACTERISTICS
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
0.01
Z
R
(t) = r(t) x R
q
q
JC
JC
= 3.5
°
C/W
q
JC
Peak T
= P
x Z
(t) + T
q
JC
J
DM
C
Duty Cycle, D = t
/ t
1
2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
6
NTPF190N65S3HF
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
E
AS
+
@
LI
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
7
NTPF190N65S3HF
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
−
dv/dt controlled by R
G
−
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220 FULLPAK
CASE 221D
−
03
ISSUE K
DATE 27 FEB 2009
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−
T
−
PLANE
−
B
−
C
2. CONTROLLING
DIMENSION: INCH
3. 221D-01
THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
F
S
Q
INCHES
DIM MIN
MAX
MILLIMETERS
U
SCALE 1:1
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1
2 3
1.00
3.28
H
G
H
J
0.100 BSC
2.54 BSC
−
Y
−
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D
3 PL
M
M
0.25 (0.010)
B
Y
MARKING
DIAGRAMS
STYLE 1:
PIN 1.
GATE
2. DRAIN
STYLE 2:
PIN 1.
BASE
STYLE 3:
PIN 1.
ANODE
2. COLLECTOR
3. EMITTER
2. CATHODE
3. ANODE
3. SOURCE
AYWW
xxxxxxG
AKA
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
MT 1
2. MT
2
xxxxxxG
AYWW
PIN 1.
CATHODE
2. ANODE
3. CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
3. GATE
Bipolar
Rectifier
A
Y
WW
= Assembly Location
=
Y
e
ar
= Work Week
xxxxxx =
Specific Device Code
G
= Pb
−
Free Package
= Assembly Location
=
Y
e
ar
A
Y
xxxxxx =
Device Code
G
AKA
= Pb
−
Free Package
= Polarity Designator
WW
= Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42514B
TO
−
220 FULLPAK
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
©
Semiconductor Components Industries, LLC, 2019
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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−
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