onsemi-NTPF360N65S3H
| Part # | onsemi-NTPF360N65S3H |
Download  | onsemi-NTPF360N65S3H |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
onsemi
andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates and/or
subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf.
onsemi
reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using
onsemi
products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by
onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hol
d
onsemi
and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
N‐Channel, SUPERFET
)
III,
FAST
650
V
,
3
60 m
W
, 10 A
NTPF360N65S3H
Description
SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
360 m
W
@ 10 V
10 A
D
Consequently, SUPERFET III FAST MOSFET series helps
minimize various power systems and improve system efficiency.
Features
G
•
700 V @ T
= 150
°
C
J
•
Typ. R
= 296 m
W
DS(on)
S
•
Ultra Low Gate Charge (Typ. Q
= 17.5 nC)
g
•
Low Effective Output Capacitance (Typ. C
= 180 pF)
oss(eff.)
•
100% Avalanche Tested
•
These Devices are Pb
−
Free and are RoHS Compliant
Applications
G
D
S
•
Computing / Display Power Supplies
•
Telecom / Server Power Supplies
•
Industrial Power Supplies
TO
−
220 FULLPAK
CASE 221D
•
Lighting / Charger / Adapter
MARKING DIAGRAM
T360N
65S3H
AYWWZZ
T360N65S3H = Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
ZZ
= Work Week
= Lot Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
March, 2021
−
Rev. 1
NTPF360N65S3H/D
NTPF360N65S3H
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
30
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T
= 25
°
C)
10*
A
C
Continuous (T
= 100
°
C)
6*
C
I
Drain Current
28*
A
mJ
A
DM
E
MOSFET dv/dt
75
AS
AS
I
1.9
E
0.83
120
20
mJ
V/ns
AR
dv/dt
Power Dissipation
P
(T =
25
°
C)
C
26
W
W/
°
C
°
C
D
Derate Above 25
°
C
0.21
−
55 to +150
260
T , T
Operating and Storage
T
e
mperature Range
J
STG
T
Maximum Lead
T
e
mperature for Soldering, 1/8
″
from Case for 5 s
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive
rating: pulse-width limited by maximum junction temperature.
2. I
= 1.9 A, R
= 25
W
, starting T
= 25
°
C.
AS
G
J
3. I
≤
5.0 A, di/dt
≤
200 A/
m
s, V
≤
400 V, starting T
= 25
°
C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
4.71
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_
C/W
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
50 Units / Tube
NTPF360N65S3H
T360N65S3H
TO
−
220
FULLPAK
2
NTPF360N65S3H
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
= 0
V
, I
= 1 mA, T
= 25
_
C
DSS
GS
D
J
V
GS
= 0
V
, I
= 1 mA, T
= 150
_
C
D
J
D
BV
/
D
T
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 10 mA, Referenced to 25
_
C
0.63
2.6
V/
_
C
DSS
J
I
Zero Gate Voltage Drain Current
V
DS
= 650
V
, V
= 0 V
1
m
A
DSS
GS
V
= 520
V
, T
=
1
25
_
C
DS
C
I
Gate to Body Leakage Current
V
=
30
V
, V
= 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
= V
, I
= 0.7 mA
2.4
4.0
V
m
W
S
GS(th)
DS(on)
GS
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
= 10
V
, I
=
5
.0 A
296
360
GS
DS
D
g
FS
V
= 20
V
, I
=
5
.0 A
11.2
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400
V
, V
= 0 V, f =
2
50 kHz
916
15
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
T
o
tal Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
= 0 V to 400 V, V
= 0 V
180
24
oss(eff.)
DS
GS
C
V
= 0 V to 400 V, V
= 0 V
GS
oss(er.)
DS
Q
17.5
4.3
5
g(tot)
V
= 400
V
, I
=
5
.0 A, V
= 10 V
DS
D
GS
Q
gs
Q
gd
ESR
f = 1 MHz
0.9
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
15
6.7
45
7
ns
ns
ns
ns
d(on)
V
= 400
V
, I
=
5
.0 A,
D
t
r
DD
V
= 10
V
, R
=
1
2
W
GS
g
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
Source to Drain Diode Forward
10
28
A
A
V
S
I
SM
V
SD
1.2
V
GS
= 0
V
, I
=
5
.0 A
SD
Voltage
t
Reverse Recovery Time
Reverse Recovery Charge
204
1.9
ns
rr
V
DD
= 400
V
, I
=
5
.0 A,
SD
F
dI /dt
= 100 A/
m
s
Q
m
C
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially
independent of operating temperature typical characteristics.
3
NTPF360N65S3H
TYPICAL CHARACTERISTICS
20
15
10
100
V
GS
= 10 V
250
m
s Pulse
T
e
st
= 20 V
6.0 V
5.0 V
V
DS
7.0 V
250
m
s Pulse
T
e
st
= 25
°
C
T
C
10
T =
25
°
C
J
4.5 V
4.0 V
5
0
T =
150
°
C
T =
−
55
°
C
J
J
1
0
0
0
5
10
15
20
2
0
0
3
4
5
6
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
, GATE
−
TO
−
SOURCE VOLTAGE (V)
DS
GS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
100
10
0.8
0.6
0.4
250
m
s Pulse
T
e
st
= 0 V
T
= 25
°
C
V
C
GS
V
= 10 V
= 20 V
GS
V
GS
1
0.2
0
T =
25
°
C
T =
−
55
°
C
J
T =
150
°
C
J
J
0.1
5
10
I ,
DRAIN CURRENT (A)
15
20
0.2
0.4
0.6
0.8
1.0
1.2
V
, BODY DIODE FORWARD VOLTAGE (V)
D
SD
Figure 3. On Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Diode Forward Voltage Variation vs.
Source Current and Temperature
6
10
10
8
V
DS
= 130 V
C
C
C
= C
gd
= C
+ C
= C
+ C
(C =
shorted)
f = 250 kHz
= 0 V
rss
oss
iss
I
D
= 5.0 A
V
5
ds
gd
GS
10
V
= 400 V
gs
gd
ds
DS
4
10
C
iss
6
4
3
10
2
10
C
oss
1
10
C
rss
2
0
0
10
−
1
10
100
200
300
400
500
600
5
10
15
20
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
NTPF360N65S3H
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
I
V
= 10 mA
I =
5.0 A
D
D
= 0 V
V
GS
= 10 V
GS
2.5
2.0
1.5
1.0
0.9
0.8
0.5
0
−
75
−
50
−
25
0
25
50 75 100
125 150
175
−
75
−
50
−
25
0
25
50 75 100
125 150 175
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On
−
Resistance Variation vs.
Temperature
12
10
8
100
10
1
10
m
s
100
m
s
6
1 ms
Operation in this area
is limited by R
DS(on)
4
10 ms
DC
0.1
Single Pulse
2
0
T
C
= 25
°
C
T =
150
°
C
J
0.01
1
10
100
1000
25
50
75
100
125
150
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
100
200
300
400
500
600
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 11. E
oss
vs. Drain
−
to
−
Source Voltage
5
NTPF360N65S3H
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
20%
10%
5%
0.1
P
DM
2%
t
1
1%
t
2
0.01
Single Pulse
Z
q
(t) = r(t) x R
q
JC
JC
R
= 4.71
°
C/W
q
JC
Peak T
= P
x Z
(t) + T
q
JC C
J
DM
Duty Cycle, D = t
/ t
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
6
NTPF360N65S3H
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
E
AS
+
@
LI
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
7
NTPF360N65S3H
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
−
dv/dt controlled by R
G
−
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
8
NTPF360N65S3H
PACKAGE DIMENSIONS
TO
−
220 FULLPAK
CASE 221D
−
03
ISSUE K
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−
T
−
PLANE
−
B
−
C
2. CONTROLLING
DIMENSION: INCH
3. 221D-01
THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
F
S
Q
H
INCHES
DIM MIN
MAX
MILLIMETERS
U
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1
2 3
1.00
3.28
G
H
J
0.100 BSC
2.54 BSC
−
Y
−
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D
3 PL
M
M
0.25 (0.010)
B
Y
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
