onsemi-NTR1P02LT1H
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NTR1P02LT1,
NTR1P02LT1H
Power MOSFET
−
20
V
,
−
1.3 A, P
−
Channel
SOT
−
23 Package
These miniature surface mount MOSFETs low R
assure
DS(on)
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are DC
−
DC converters and power management in
portable and battery
−
powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
V
R
Max
I Max
D
(BR)DSS
DS(on)
−
20 V
220 m
W
−
1.3 A
P
−
Channel
D
Features
•
Low R
Provides Higher Efficiency and Extends Battery Life
DS(on)
•
Miniature SOT
−
23 Surface Mount Package Saves Board Space
•
Pb
−
Free and Halide
−
Free Packages are Available
G
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
S
Rating
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
−
Continuous
Drain Current
Symbol
Value
−
20
12
Unit
V
MARKING DIAGRAM &
PIN ASSIGNMENT
V
DSS
3
V
GS
V
Drain
3
1
I
−
1.3
−
4.0
A
A
−
Continuous @ T
= 25
°
C
D
A
2
I
P02 M
G
DM
−
Pulsed Drain Current (t
≤
10
m
s)
p
G
SOT
−
23
T
o
tal Power Dissipation @ T
= 25
°
C
P
D
400
mW
A
CASE 318
STYLE 21
1
Gate
2
Operating and Storage
T
e
mperature Range
T , T
−
55 to
150
°
C
J
stg
Source
Thermal Resistance
−
Junction
−
to
−
Ambient
R
300
260
°
C/W
°
C
q
P02
M
G
= Specific Device Code
= Date Code*
= Pb
−
Free Package
JA
Maximum Lead
T
e
mperature for Soldering
T
L
Purposes, (1/8
″
from case for 10 s)
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
†
Device
Package
Shipping
NTR1P02LT1
SOT
−
23
3000
T
a
pe & Reel
3000
T
a
pe & Reel
NTR1P02LT1G
SOT
−
23
(Pb
−
Free)
NTR1P02LT1H
NTR1P02LT3G
SOT
−
23
(Halide
−
Free)
3000
T
a
pe & Reel
SOT
−
23
(Pb
−
Free)
10,000
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
November, 2010
−
Rev. 9
NTR1P02LT1/D
NTR1P02LT1, NTR1P02LT1H
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
(V =
0 V, I
=
−
10
m
A)
V
−
20
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Current
(V =
−
16 V, V
= 0 V)
I
m
A
DSS
−
1.0
−
10
DS
GS
(V =
−
16 V, V
= 0 V, T
= 125
°
C)
DS
GS
J
Gate
−
Body Leakage Current (V
=
12 V, V
= 0 V)
I
100
nA
GS
DS
GSS
Gate Threshold Voltage
V
GS(th)
−
0.7
−
1.0
−
1.25
V
(V =
V ,
I =
−
250
m
A)
DS
GS
D
Static Drain
−
to
−
Source On
−
Resistance
(V =
−
4.5 V, I
=
−
0.75 A)
r
W
DS(on)
0.135
0.190
0.22
0.35
GS
D
(V =
−
2.5 V, I
=
−
0.5 A)
GS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V =
−
5.0 V)
C
225
130
55
pF
ns
DS
iss
Output Capacitance
Transfer Capacitance
(V =
−
5.0 V)
DS
C
oss
(V =
−
5.0 V)
DG
C
rss
Turn
−
On Delay Time
t
7.0
15
d(on)
Rise Time
t
r
(V =
−
5.0
V
, I
=
−
1.0 A,
DD
L
D
R =
5.0
W
, R
= 6.0
W
)
G
Turn
−
Off Delay Time
Fall Time
t
18
d(off)
t
20
f
T
o
tal Gate Charge
(V =
−
16
V
, I
=
−
1.5 A,
Q
T
5500
pC
A
DS
D
V
=
−
4.0 V)
GS
SOURCE
−
DRAIN DIODE CHARACTERISTICS
Continuous Current
I
S
−
0.6
−
0.75
−
1.0
Pulsed Current
I
SM
V
SD
V
GS
S
Reverse Recovery Time
t
16
11
ns
rr
(I =
−
1.0 A, V
= 0 V,
S
GS
t
a
dI /dt
= 100 A/
m
s)
S
t
b
5.5
Reverse Recovery Stored Charge
Q
0.0085
m
C
RR
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
2. Switching
characteristics are independent of operating junction temperature.
2
NTR1P02LT1, NTR1P02LT1H
2.5
2
1.4
V
=
−
3 V
−
2.8 V
V
≥
−
10 V
GS
DS
−
2 V
1.2
1
T =
25
°
C
J
−
2.6 V
−
2.4 V
−
1.8 V
−
1.6 V
1.5
0.8
0.6
0.4
0.2
0
−
2.2 V
T =
25
°
C
J
1
0.5
0
T =
100
°
C
J
−
1.2 V
−
1.4 V
T =
−
55
°
C
J
0
1
2
3
4
5
1
1.2
1.4
1.6
1.8
2
2.2
2.4
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.04
0.03
0.3
0.25
0.2
T =
25
°
C
J
I
=
−
1.0 A
D
V
GS
=
−
2.5 V
T =
25
°
C
J
T =
100
°
C
J
T =
25
°
C
0.02
0.01
0
J
0.15
0.1
0.05
0
T =
−
55
°
C
J
0
2
4
6
8
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
GS
−
I ,
DRAIN CURRENT (AMPS)
D
Figure 3. On
−
Resistance versus
Gate
−
to
−
Source Voltage
Figure 4. On
−
Resistance versus Drain Current
and Gate Voltage
1000
0.3
0.2
0.1
0
V
GS
= 0 V
I
V
=
−
0.5 A
D
=
−
2.5 V
GS
T =
125
°
C
J
100
10
T =
100
°
C
J
1
0.1
T =
25
°
C
J
0.01
−
50
−
25
0
25
50
75
100
125
150
4
8
12
16
T , JUNCTION TEMPERATURE (
°
C)
J
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
versus Voltage
3
NTR1P02LT1, NTR1P02LT1H
6
5000
4500
4000
V
= 0V
GS
28
V
DS
= 0V
T =
25
°
C
J
24
20
Q
T
3500
3000
2500
2000
1500
1000
500
4
2
0
16
12
8
C
iss
Q
Q
2
1
C
oss
V
I
=
−
16 V
=
−
1.5 A
DS
4
0
D
C
rss
T =
25
°
C
J
0
15
10
5
0
5
10
15
20
25
0
1
2
3
4
−
V
−
V
GS
DS
Q ,
TOTAL GATE CHARGE (nC)
G
GATE
−
TO
−
SOURCE OR DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage versus Total Charge
100
0.8
0.6
0.4
0.2
V
I
=
−
16 V
=
−
1 A
V
= 0 V
DD
GS
T =
25
°
C
J
D
t
r
t
f
10
t
d(off)
t
d(on)
1
0
1
10
R ,
GATE RESISTANCE (
W
)
100
1.00E
−
01 3.00E
−
01 5.00E
−
01 7.00E
−
01 9.00E
−
01
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
4
NTR1P02LT1, NTR1P02LT1H
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AP
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
D
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
°
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10
°
c
1
2
b
0.25
e
q
H
A
E
q
L
STYLE 21:
A1
L1
VIEW C
PIN 1.
GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make changes without further notice
to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights
nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal
Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLIC
A
T
ION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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: 800
−
282
−
9855
T
o
ll Free
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Phone: 421 33 790 2910
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Phone: 81
−
3
−
5773
−
3850
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.
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−
675
−
2175 or 800
−
344
−
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o
ll Free USA/Canada
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−
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−
344
−
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o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTR1P02LT1/D
