onsemi-NTR4003NT1G
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NTR4003N, NVR4003N
Small Signal MOSFET
30 V, 0.56 A, Single N−Channel, SOT−23
Features
•
Low Gate
V
o
ltage Threshold (V
) to Facilitate Drive Circuit
GS(TH)
Design
•
Low Gate Charge for Fast Switching
•
ESD Protected Gate
•
SOT−23 Package Provides Excellent Thermal Performance
•
Minimum Breakdown
V
o
ltage Rating of 30 V
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
1.0
W
@ 4.0 V
1.5
W
@ 2.5 V
30 V
0.56 A
•
NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
N−Channel
•
These Devices are Pb−Free and are RoHS Compliant
Applications
3
•
Notebooks:
♦
Level Shifters
♦
Logic Switches
♦
Low Side Load Switches
1
•
Portable Applications
2
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol Value
Unit
V
MARKING DIAGRAM/
PIN ASSIGNMENT
V
DSS
30
20
Gate−to−Source Voltage
V
GS
V
3
3
Continuous Drain
Steady T
= 25
°
C
I
0.5
A
A
D
Drain
State
T =
85
°
C
A
0.37
0.69
1
2
Power Dissipation
Steady State
P
W
A
TR8 M
G
D
G
SOT−23
CASE 318
STYLE 21
Continuous Drain
t < 10 s
T =
25
°
C
I
D
0.56
0.40
0.83
A
T =
85
°
C
A
1
Gate
2
Source
Power Dissipation
t < 5 s
P
W
D
TR8
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
Pulsed Drain Current
t =
10
m
s
p
I
1.7
A
DM
Operating Junction and Storage
T
e
mperature
T ,
−55 to
150
°
C
J
(Note: Microdot may be in either location)
T
s
tg
*Date Code orientation and overbar may vary
depending upon manufacturing location.
Source Current (Body Diode)
I
S
1.0
A
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 s)
T
260
°
C
L
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
NTR4003NT1G SOT−23
(Pb−Free)
3000 /
T
a
pe & Reel
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
180
150
300
Unit
NTR4003NT3G SOT−23
(Pb−Free)
10,000 /
T
a
pe &
Reel
R
°
C/W
q
JA
NVR4003NT3G SOT−23
(Pb−Free)
10,000 /
T
a
pe &
Reel
R
q
q
JA
JA
R
1. Surface−mounted
on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted
on FR4 board using the minimum recommended pad size.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
April, 2015 − Rev. 4
NTR4003N/D
NTR4003N, NVR4003N
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
1
00
m
A
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
40
mV/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
= 0
V
,
= 30
V
T =
25
°
C
1.0
1.0
m
A
m
A
DSS
GS
J
V
DS
Gate−to−Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
GS
10 V
GSS
DS
V
V
= V
, I
= 250
m
A
0.8
1.4
V
GS(TH)
GS
DS
D
Negative Threshold
V
/T
3.4
mV/
°
C
GS(TH)
J
T
e
mperature Coefficient
Drain−to−Source On Resistance
V
V
V
= 4.0
V
, I
=
1
0
mA
1.0
1.5
1.5
2.0
GS
GS
DS
D
R
W
DS(on)
= 2.5
V
, I
=
1
0
mA
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
= 3.0
V
, I
=
1
0
mA
0.33
S
D
C
21
42
40
16
iss
V
= 0
V
, f
=
1
.0
MHz,
GS
Output Capacitance
C
19.7
8.1
pF
nC
oss
V
DS
= 5.0
V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
rss
Q
1.15
0.15
0.32
0.23
G(TOT)
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain Charge
Turn−On Delay Time
Q
G(TH)
V
GS
= 5.0
V
, V
= 24
V
,
DS
I
D
= 0.1
A
Q
GS
GD
Q
t
16.7
47.9
65.1
64.2
d(on)
Rise Time
t
r
V
GS
= 4.5
V
, V
= 5.0
V
,
DD
ns
I
D
= 0.1
A, R
= 50
W
G
Turn−Off Delay Time
t
d(off)
Fall Time
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0
V
,
= 10
mA
T =
25
°
C
0.65
0.45
14
0.7
V
SD
GS
J
I
S
T =
125
°
C
J
Reverse Recovery Time
t
V
GS
= 0
V
,
d
I
/dt = 8A/
m
s,
ns
RR
S
I
S
= 10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
4. Switching
characteristics are independent of operating junction temperatures.
2
NTR4003N, NVR4003N
TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
1.6
1.6
V
GS
= 10 V to 5 V
V
DS
≥
10 V
T =
−55
°
C
J
4.5 V
1.2
1.2
0.8
T =
25
°
C
J
0.8
0.4
0
4 V
T =
125
°
C
J
0.4
0
3.5 V
2.5 V
0
1
2
0
1
2
3
4
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
1
V
GS
= 10 V
I
D
= 0.2 A
8
6
4
T =
125
°
C
J
0.8
0.6
0.4
T =
25
°
C
J
T =
−55
°
C
J
2
0
0.2
0
2.4
2.8
3.2
3.6
4
0
0.1
0.2
0.3
0.4
0.5
0.6
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Temperature
1000
1.80
1.60
V
GS
= 0 V
I
V
= 0.3 A
D
= 4.5 V
GS
T =
150
°
C
J
1.40
1.20
1.00
100
T =
125
°
C
J
0.80
0.60
10
10
20
0
5
15
25
30
−25
−50
0
25
50
75
100
125 150
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
3
NTR4003N, NVR4003N
TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
5
50
40
30
20
T =
25
°
C
GS
J
V
T =
25
°
C
J
= 0 V
I
D
= 0.1 A
4
3
2
C
iss
C
oss
rss
1
0
10
0
C
0
4
8
12
16
20
0
0.4
0.8
1.2
DRAIN−TO−SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source & Drain−to−Source
Voltage vs. Total Charge
1
V
GS
= 0 V
0.1
0.01
T =
150
°
C
J
T =
25
°
C
J
0.001
0.4
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
0.8
V
SD
Figure 9. Diode Forward Voltage vs. Current
4
NTR4003N, NVR4003N
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
D
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
°
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10
°
c
1
2
b
0.25
e
q
H
E
q
A
L
STYLE 21:
A1
PIN 1.
GATE
L1
VIEW C
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at
www.onsemi.com/site/pdf/Patent−Marking.pdf
. SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable
copyright laws and is not for resale in any manner.
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T
:
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T
o
ll Free
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o
ll Free USA/Canada
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o
ll Free USA/Canada
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For additional information, please contact your local
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NTR4003N/D
