onsemi-NTR4502PT1G
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NTR4502
P
,
N
VTR4502P
P-Channel, SOT-23
-30
V
,
–
1.95 A
Features
•
Leading Planar Technology for Low Gate Charge/Fast Switching
V
R
TYP
I
D
−
1.95 A
•
Low R
for Low Conduction Losses
(BR)DSS
DS(on)
DS(ON)
•
SOT
−
23 Surface Mount for Small Footprint (3 x 3 mm)
•
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
PPAP Capable
155 m
W
@
−
10 V
240 m
W
@
−
4.5 V
−
30 V
P
−
Channel MOSFET
•
These Devices are Pb
−
Free and are RoHS Compliant
S
Applications
•
DC to DC Conversion
G
•
Load/Power Switch for Portables and Computing
•
Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.
•
Battery Charging Circuits
D
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol Value Unit
MARKING DIAGRAM/
PIN ASSIGNMENT
V
−
30
20
V
V
A
DSS
Drain
3
Gate
−
to
−
Source Voltage
V
GS
t < 10 s
T =
25
°
C
I
D
−
1.95
−
1.56
1.25
A
TR2 M
G
T =
70
°
C
A
G
SOT
−
23
CASE 318
STYLE 21
2
1
Power Dissipation
t < 10 s
P
W
A
D
Gate
Source
Continuous Drain Current
Steady T
= 25
°
C
I
D
−
1.13
−
0.90
0.4
A
TR2 =
Device Code
State
Steady State
t =
10
m
s
M
G
= Date Code*
= Pb
−
Free Package
T =
70
°
C
A
Power Dissipation
P
W
D
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Pulsed Drain Current
I
−
6.8
A
p
DM
Operating Junction and Storage
T
e
mperature
T ,
STG
−
55 to
150
°
C
J
T
ORDERING INFORMATION
Source Current (Body Diode)
I
S
−
1.25
A
Device
Package
Shipping
†
Lead
T
e
mperature for Soldering Purposes
(1/8 in from case for 10 s)
T
L
260
°
C
NTR4502PT1G
SOT
−
23
3000 /
T
a
pe & Reel
(Pb
−
Free)
THERMAL RESISTANCE RATINGS
Parameter
NVTR4502PT1G
SOT
−
23
(Pb
−
Free)
3000 /
T
a
pe & Reel
Symbol
Max
300
100
Unit
R
°
C/W
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
R
q
JA
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface
−
mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
©
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
June, 2019
−
Rev. 6
NTR4502P/D
NTR4502
P
,
N
VTR4502P
Electrical Characteristics
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
−
250
m
A
−
30
V
(BR)DSS
D
Zero Gate Voltage Drain Current
I
V
GS
= 0
V
, V
=
−
30 V
T =
25
°
C
J
−
1
m
A
DSS
DS
T =
55
°
C
J
−
10
100
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
20 V
nA
GSS
DS
GS
V
V
GS
= V
, I
=
−
250
m
A
−
1.0
−
3.0
200
350
V
GS(TH)
DS
D
Drain
−
to
−
Source On Resistance
R
V
GS
=
−
10
V
, I
=
−
1.95 A
155
240
3
m
W
DS(on)
D
V
GS
=
−
4.5
V
, I
=
−
1.5 A
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
DS
=
−
10
V
, I
=
−
1.25 A
S
FS
D
C
V
= 0
V
, f = 1
M
Hz, V
=
−
15 V
200
80
50
6
pF
ISS
GS
DS
Output Capacitance
C
C
OSS
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
Q
V
=
−
10
V
, V
=
−
15 V; I
=
−
1.95 A
10
nC
ns
G(TOT)
GS
DS
D
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Turn
−
On Delay Time
Q
0.3
1
G(TH)
Q
GS
Q
1.7
GD
t
V
=
−
10
V
, V
=
−
15
V
,
=
−
1.95 A, R
= 6
W
5.2
12
10
20
35
30
d(ON)
GS
D
DD
G
I
Rise Time
t
r
Turn
−
Off Delay Time
t
19
d(OFF)
Fall Time
t
f
17.5
Forward Diode Voltage
Reverse Recovery Time
V
V
= 0
V
, I
=
−
1.25 A
−
0.8
−
1.2
V
SD
RR
GS
S
t
V
GS
= 0
V
,
d
I
/d =
100 A/
m
s, I
=
−
1.25 A
23
ns
SD
t
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface
−
mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
3. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
4. Switching
characteristics are independent of operating junction temperatures.
2
NTR4502
P
,
N
VTR4502P
V
=
−
4.0 V
GS
V
DS
=
−
10 V
5
4
3
2
1
0
5
4
3
2
1
0
T =
25
°
C
=
−
3.8 V
J
V
GS
T =
−
55
°
C
J
V
=
−
5.0 V
GS
V
GS
=
−
3.6 V
T =
25
°
C
J
V
=
−
7.0 V
GS
T =
100
°
C
J
V
=
−
3.4 V
GS
V
=
−
10 V
GS
V
GS
=
−
3.2 V
V
=
−
3.0 V
GS
V
V
=
−
2.8 V
=
−
2.6 V
GS
V
=
−
2.4 V
GS
GS
0
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (V)
GS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.4
0.35
0.3
0.3
0.25
0.2
T =
25
°
C
J
I
=
−
1.95 A
D
T =
25
°
C
J
V
=
−
4.5 V
GS
GS
0.25
0.2
V
=
−
10 V
0.15
0.1
0.15
0.1
3
4
5
6
7
8
9
10
1
1.5
2
2.5
3
3.5
4
4.5
5
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (V)
GS
−
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance versus
Gate
−
to
−
Source Voltage
Figure 4. On
−
Resistance versus Drain Current
and Gate Voltage
1000
100
10
1.8
1.6
1.4
1.2
1
I
V
=
−
1.9 A
V
GS
= 0 V
D
=
−
10 V
GS
T =
150
°
C
J
T =
100
°
C
J
0.8
0.6
1
−
50
−
25
0
25
50
75
100
125
150
2
6
10
14
18
22
26
30
T , JUNCTION TEMPERATURE (
°
C)
J
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
versus Voltage
3
NTR4502
P
,
N
VTR4502P
500
400
300
200
100
0
T =
25
°
C
J
V
= 0 V
V
= 0 V
DS
GS
C
ISS
C
RSS
C
ISS
C
OSS
C
RSS
10
5
0
5
10
15
20
25
30
−
V
GS
−
V
DS
GATE
−
TO
−
SOURCE OR DRAIN
−
TO
−
SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation
12
10
8
18
15
12
9
Q
T
6
Q
Q
GD
GS
4
6
2
3
I
D
=
−
1.95 A
T =
25
°
C
J
0
0
0
1
2
3
4
5
6
7
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage versus Total Charge
100
10
1
3
V
=
−
15 V
=
−
1.95 V
=
−
10 V
DS
T =
25
°
C
J
I
D
2.5
2
V
GS
t
f
t
t
d(off)
t
r
1.5
1
d(on)
0.5
0
0.3
0.6
0.9
1.2
1
10
R ,
GATE RESISTANCE (
W
)
100
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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©
Semiconductor Components Industries, LLC, 2019
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,
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