onsemi-NTTFD022N10C
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MOSFET
– Single N-Channel
100
V
,
2
5 m
W
, 24 A
NTTFD022N10C
General Description
This device includes two specialized N
−
Channel MOSFETs in a
dual package. The switch node has been internally connected to enable
easy placement and routing of synchronous buck converters. The
control MOSFET (Q2) and synchronous (Q1) have been designed to
provide optimal power efficiency.
Features
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Q1: N
−
Channel
25 m
W
@ 10 V
61 m
W
@ 6 V
100 V
24 A
•
Max r
•
Max r
= 25 m
W
at V
= 10
V
, I
=
7
.8 A
GS D
= 61 m
W
at V
= 6, I
= 3.9 A
DS(on)
DS(on)
GS
D
Q2: N
−
Channel
•
Max r
= 25 m
W
at V
= 10
V
, I
=
7
.8 A
GS D
DS(on)
ELECTRICAL CONNECTION
•
Max r
= 61 m
W
at V
= 6, I
= 3.9 A
GS D
DS(on)
GND
LSG
V+
SW GND
GND
SW
SW
•
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses
•
RoHS Compliant
SW
SW
LSG
V+
SW
V+
V+
HSG V+
HSG
Applications
Dual N-Channel MOSFET
PIN1
•
Computing
•
Communications
•
General Purpose Point of Load
PIN DESCRIPTION
Pin
1, 11, 12
Name
GND (LSS)
LSG
Description
Low Side Source
PIN1
Bottom
Top
2
Low Side Gate
Power Clip 33 Symmetric
(WQFN12)
3, 4, 5, 6
7
V + (HSD)
HSG
High Side Drain
CASE 510CJ
High Side Gate
8, 9, 10
SW
Switching Node, Low Side Drain
MARKING DIAGRAM
D022
AYWWZZ
D022 =
Specific Device Code
A
Y
= Assembly Plant Code
= Numeric Year Code
WW =
Work Week Code
ZZ =
Assembly Lot Code
ORDERING INFORMATION
of this data sheet.
©
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2021
−
Rev. 3
NTTFD022N10C/D
NTTFD022N10C
ORDERING INFORMATION AND PACKAGE MARKING
†
Device
Marking
Package
Shipping
NTTFD022N10C
D022
WQFN12
(Pb
−
Free)
3000 Units/
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
MOSFET MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise specified)
A
Symbol
Parameter
Q1
Q2
Units
V
V
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
100
100
V
V
A
DS
GS
20
20
I
Drain Current
−
Continuous
T
T
= 25
°
C
24
24
D
C
C
−
Continuous
−
Continuous
−
Pulsed
= 100
°
C
14
349
14
349
T =
25
°
C
A
T =
25
°
C
A
E
Single Pulse Avalanche Energy (L = 3 mH, I
Power Dissipation for Single Operation
Power Dissipation for Single Operation
= 5.1 A)
39
39
mJ
W
AS
L(pk)
P
T
= 25
°
C
C
26
26
D
T =
25
°
C
A
T , T
Operating and Storage Junction
T
e
mperature Range
−
55 to +150
°
C
°
C
J
STG
T
L
Lead
T
e
mperature for Soldering Purposes (1/8” from case for 10 s)
260
260
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction
−
to
−
Case
Q1
4.8
Q2
4.8
Units
°
C/W
R
q
JC
R
Thermal Resistance, Junction
−
to
−
Ambient
Thermal Resistance, Junction
−
to
−
Ambient
q
JA
R
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
V
OFF CHARACTERISTICS
BV
Drain
−
to
−
Source Breakdown Voltage
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
100
100
I
I
I
I
= 250
m
A, V
= 0 V
= 0 V
DSS
D
D
D
D
GS
= 250
m
A, V
GS
Breakdown Voltage
T
e
mperature
Coefficient
80
80
mV/
°
C
m
A
= 250
m
A, referenced to 25
°
C
= 250
m
A, referenced to 25
°
C
D
BV
DSS
D
T
J
I
Zero Gate Voltage Drain Current
V
V
V
V
= 80
V
, V
= 0 V
= 0 V
= 0 V
= 0 V
1
DSS
DS
DS
GS
GS
GS
GS
= 80
V
, V
1
I
Gate
−
to
−
Source Leakage Current,
=
=
20
V
, V
100
100
nA
GSS
DS
Forward
20
V
, V
DS
2
NTTFD022N10C
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
V
ON CHARACTERISTICS
V
GS(th)
Gate
−
to
−
Source Threshold Voltage
Q1
Q2
Q1
Q2
Q1
2
2
2.9
2.9
4
4
V
V
I
= V
, I
= 44
m
A
GS
DS
D
= V
, I
= 44
m
A
GS
DS
D
Gate
−
to
−
Source Threshold Voltage
T
e
mperature Coefficient
−
9.2
−
9.2
18.7
28
mV/
°
C
m
W
= 44
m
A, referenced to 25
°
C
= 44
m
A, referenced to 25
°
C
D
V
GS(th)
D
T
J
D
I
D
r
Drain
−
to
−
Source On Resistance
Drain
−
to
−
Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
= 10
V, I
= 7.8 A
25
61
DS(on)
D
= 6
V
, I
= 3.9 A
D
= 10
V, I
= 7.8 A,
32.6
D
T =
125
°
C
J
r
V
GS
V
GS
V
GS
= 10
V, I
= 7.8 A
Q2
18.7
28
25
61
m
W
DS(on)
D
= 6
V
, I
= 3.9 A
D
= 10
V, I
= 7.8 A,
32.6
D
T =
125
°
C
J
g
FS
V
DS
= 5
V
, I
= 7.8 A
Q1
Q2
191
191
S
D
V
DS
= 5
V
, I
= 7.8 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Q1:
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
585
585
354
354
8
pF
pF
pF
W
ISS
V
DS
= 50
V
, V
= 0 V, f = 1
M
hz
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
OSS
RSS
Q2:
V
DS
= 50
V
, V
= 0 V, f = 1
M
Hz
GS
C
8
R
T =
25
°
C
A
1.5
1.5
G
SWITCHING CHARACTERISTICS
td
Turn
−
On Delay Time
Q1:
DD
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8.5
8.5
ns
ns
ns
ns
nC
(ON)
V
= 50
V
, I
=
7
.8 A,
D
R
= 6
W
GEN
t
r
Rise Time
3.2
Q2:
3.2
V
= 50
V
, I
=
7
.8 A,
D
= 6
W
DD
GEN
R
t
Turn
−
Off Delay Time
Fall Time
13.3
13.3
4.1
D(OFF)
t
f
4.1
Q
Q
T
o
tal Gate Charge
V
V
= 0 V to 10 V
= 0 V to 6 V
9.0
g
g
GS
9.0
T
o
tal Gate Charge
5.89
5.89
2.67
2.67
2.0
nC
nC
nC
GS
Q1:
V
D
= 50
V
,
= 50
V
,
DD
Q
Q
Gate
−
to
−
Source Gate Charge
Gate
−
to
−
Drain “Miller” Charge
gs
I
= 7.8 A
Q2:
V
D
DD
gd
I
= 7.8 A
2.0
3
NTTFD022N10C
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Parameter
Test Conditions
Type
Min
Typ
Max
Units
V
V
SD
Source
−
to
−
Drain Diode Forward
Voltage
V
V
= 0
V
, I
=
7
.8 A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.82
0.82
33
1.5
1.5
GS
S
= 0
V
, I
=
7
.8 A
GS
S
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Q1:
ns
rr
I =
7.8 A, di/dt = 300 A/
m
s
F
Q2:
33
Q
35
nC
ns
rr
I =
7.8 A, di/dt = 300 A/
m
s
F
35
t
rr
Q1:
14
I =
7.8 A, di/dt = 1000 A/
m
s
F
Q2:
14
Q
91
nC
rr
I =
7.8 A, di/dt = 1000 A/
m
s
F
91
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5
×
1.5 in. board of FR
−
4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 70
°
C/W when mounted on
b) 70
°
C/W when mounted on
2
2
a 1 in
pad of 2 oz copper.
a 1 in
pad of 2 oz copper.
c) 135
°
C/W when mounted on
d) 135
°
C/W when mounted on
a minimum pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse
T
e
st: Pulse Width < 300
m
s, Duty cycle < 2.0%.
3. Q1:
E of
39 mJ is based on starting T
= 25
_
C; N
−
ch: L = 3 mH, I
= 5.1 A, V
= 80
V
, V
=
1
0
V
.
1
00% test at L = 3 mH, I
= 5.3 A.
AS
J
AS
DD
GS
AS
Q2: E
of 39 mJ is based on starting T
= 25
_
C; N
−
ch: L = 3 mH, I
= 5.1 A, V
= 80
V
, V
=
1
0
V
.
1
00% test at L = 3 mH, I
= 5.3 A.
AS
J
AS
DD
GS
AS
4. Computed
continuous current limited to Max Junction
T
e
mperature only, actual continuous current will be limited by thermal
& electro
−
mechanical application board design.
4
NTTFD022N10C
TYPICAL CHARACTERISTICS
30
30
27
V
GS
= 10 V to 6.5 V
V
DS
= 5 V
6.0 V
5.0 V
25
20
15
10
24
21
18
15
12
9
T =
25
°
C
J
6
4.5 V
4.0 V
5
0
3
0
T =
150
°
C
J
T =
−
55
°
C
J
0
0.5 1.0
1.5 2.0
2.5 3.0 3.5 4.0 4.5 5.0
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
V
DS
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
60
50
40
30
430
344
258
172
T =
25
°
C
D
J
T =
25
°
C
J
I
= 7.8 A
V
= 6 V
GS
V
GS
= 10 V
20
10
5
86
0
4
5
6
7
8
9
10
0
5
10
15
20
25
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
100K
10K
1K
V
= 10 V
=7.8 A
GS
I
D
1.7
1.4
T =
150
°
C
J
T =
125
°
C
J
1.1
100
T =
85
°
C
J
10
1
0.8
0.5
−
50
−
25
0
25
50
75
100
125
150
0
10 20 30 40 50 60 70 80 90
100
T , JUNCTION TEMPERATURE (
°
C)
J
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
5
NTTFD022N10C
TYPICAL CHARACTERISTICS
1K
10
9
8
7
6
5
4
3
2
C
Q
ISS
G(TOT)
C
OSS
100
Q
Q
GD
GS
10
1
V =
50 V
DS
V
= 0 V
C
GS
RSS
I
D
= 7.8 A
T =
25
°
C
J
1
0
T =
25
°
C
J
f = 1 MHz
0
10 20 30
40 50 60 70
80 90 100
0
1
2
3
4
5
6
7
8
9
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
10
100
V
V
= 10 V
= 50 V
V
GS
= 0 V
GS
DS
I
D
= 7.8 A
t
d(off)
t
d(on)
1
1
t
f
t
r
T =
150
°
C T =
25
°
C
T =
−
55
°
C
J
J
J
0.1
0.1
1
10
R ,
GATE RESISTANCE (
W
)
100
0
0.2
0.4
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
0.6
0.8
1.0
1.2
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
10
10
m
s
T
= 25
°
C
J(initial)
100
m
s
V
GS
≤
10 V
Single Pulse
1
T
= 125
°
C
T =
25
°
C
J(initial)
A
1 ms
10 ms
100 ms
1 s
R
= 135
°
C/W
q
JA
0.1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.01
1
0.000001 0.00001
0.1
1
10
100
0.0001
0.001
0.01
0.1
V
DS
, DRAIN
−
SOURCE VOLTAGE(V)
T ,
TIME IN AVALANCHE (s)
AV
Figure 11. Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
6
NTTFD022N10C
TYPICAL CHARACTERISTICS
1000
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WQFN12 3.3X3.3, 0.65P
CASE 510CJ
ISSUE A
DATE 08 AUG 2022
GENERIC
MARKING DIAGRAM*
XXXX
AYWW
G
XXXX = Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13806G
WQFN12 3.3X3.3, 0.65P
PAGE 1 OF 1
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onsemi
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onsemi
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onsemi
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onsemi
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©
Semiconductor Components Industries, LLC, 2019
onsemi
,
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onsemi
” or its affiliates
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−
Marking.pdf
.
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−
is” and
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onsemi
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T
:
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−
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o
ll Free USA/Canada
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