onsemi-NTTFS4985NFTAG
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NTTFS4985NF
N-Channel, WDFN8
30
V
,
6
4 A
Features
•
Integrated Schottky Diode
•
Low R
to Minimize Conduction Losses
V
R
MAX
I MAX
D
DS(on)
(BR)DSS
DS(on)
•
Low Capacitance to Minimize Driver Losses
•
Optimized Gate Charge to Minimize Switching Losses
•
These Devices are Pb
−
Free and are RoHS Compliant
3.5 m
W
@ 10 V
5.2 m
W
@ 4.5 V
30 V
64 A
Applications
•
CPU Power Delivery
N
−
Channel MOSFET
D
•
Synchronous Rectification for DC
−
DC Converters
•
Low Side Switching
•
Telecom Secondary Side Rectification
G
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol Value Unit
S
V
30
20
V
V
A
DSS
Gate
−
to
−
Source Voltage
V
GS
MARKING DIAGRAM
Continuous Drain
I
D
T =
25
°
C
22
A
1
Current R
q
JA
T =
85
°
C
A
15.9
2.69
1
S
S
S
G
D
D
D
D
4985
AYWW
G
G
WDFN8
(
m
8FL)
CASE 511AB
Power Dissipation R
T =
25
°
C
A
P
W
A
q
D
JA
Continuous Drain
I
D
T =
25
°
C
A
32.4
23.4
5.85
Current R
≤
10 s
q
JA
T =
85
°
C
A
4985
A
Y
WW
G
= Specific Device Code
= Assembly Location
=
Y
e
ar
= Work Week
= Pb
−
Free Package
Power Dissipation
T =
25
°
C
A
P
I
W
A
D
D
D
R
Steady
State
q
JA
Continuous Drain
T =
25
°
C
A
16.3
11.7
1.47
D
q
JA
T =
85
°
C
A
(Note: Microdot may be in either location)
Power Dissipation
T =
25
°
C
A
P
I
W
A
R
q
JA
Continuous Drain
T
C
T
C
T
C
= 25
°
C
= 85
°
C
= 25
°
C
64
46
D
ORDERING INFORMATION
q
JC
†
Device
Package
Shipping
Power Dissipation
P
22.73
W
NTTFS4985NFTAG
WDFN8
(Pb
−
Free)
1500 /
T
a
pe &
Reel
R
q
JC
Pulsed Drain Current
T =
25
°
C, t
= 10
m
s
A
I
DM
192
A
p
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
Operating Junction and Storage
T
e
mperature
T ,
stg
−
55 to
+150
°
C
J
T
Source Current (Body Diode)
Drain to Source dV/dt
I
S
32
A
dV/dt
6.0
V/ns
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
June, 2019
−
Rev. 2
NTTFS4985NF/D
NTTFS4985NF
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Symbol Value Unit
Single Pulse Drain
−
to
−
Source Avalanche Energy
E
AS
52
mJ
(T =
25
°
C, V
= 50
V
, V
=
1
0
V
,
J
DD
GS
I =
32 A
, L = 0.1 mH, R
= 25
W
)
L
pk
G
Lead
T
e
mperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 2 oz Cu.
2
2. Surface
−
mounted on FR4 board using the minimum recommended pad size of 90 mm
.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction
−
to
−
Case (Drain)
Symbol
Value
5.5
Unit
°
C/W
R
q
JC
R
46.4
84.8
21.4
q
JA
R
q
JA
R
q
JA
3. Surface
−
mounted on FR4 board using 1 sq
−
in pad, 2 oz Cu.
2
4. Surface
−
mounted on FR4 board using the minimum recommended pad size of 90 mm
.
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
2
50
m
A
30
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
15
mV/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
= 0
V
,
500
100
m
A
DSS
GS
DS
T =
25
°
C
J
V
= 24 V
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
20 V
nA
GSS
DS
GS
V
V
= V
, I
= 250
m
A
1.2
1.6
5.2
2.3
V
GS(TH)
GS
DS
D
Negative Threshold
T
e
mperature
Coefficient
V
/T
J
mV/
°
C
GS(TH)
Drain
−
to
−
Source On Resistance
R
I
= 20 A
= 10 A
= 20 A
= 10 A
2.8
2.8
3.5
5.2
m
W
DS(on)
D
V
= 10 V
= 4.5 V
GS
I
D
I
4.16
4.13
34
D
D
V
GS
I
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 1.5
V
, I
=
1
0 A
S
DS
D
C
2075
876
46
pF
iss
Output Capacitance
C
oss
V
= 0
V
, f =
1
.0 MHz, V
= 15 V
DS
GS
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
rss
Q
13.6
2.0
nC
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
G(TH)
V
= 4.5
V
, V
=
1
5
V
, I
=
2
0 A
DS D
GS
Q
5.8
GS
GD
Q
4.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6.
Switching characteristics are independent of operating junction temperatures.
2
NTTFS4985NF
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
CHARGES AND CAPACITANCES
T
o
tal Gate Charge
Symbol
Test Condition
Min
Typ
Max
Unit
nC
Q
V
GS
= 10
V
, V
=
1
5
V
, I
=
2
0 A
29.4
G(TOT)
DS
D
Turn
−
On Delay Time
Rise Time
t
11
24
ns
d(on)
t
r
V
V
V
= 4.5
V
, V
=
1
5
V
,
DS
GS
D
I
= 15 A, R
= 3.0
W
G
Turn
−
Off Delay Time
Fall Time
t
t
t
20
d(off)
t
f
5.4
8.5
24
Turn
−
On Delay Time
Rise Time
ns
d(on)
t
r
= 10
V
, V
=
1
5
V
,
GS
DS
I
D
= 15 A, R
= 3.0
W
G
Turn
−
Off Delay Time
Fall Time
25
d(off)
t
f
4.0
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
0.4
0.33
35.7
18.2
17.5
32
0.7
V
SD
J
= 0
V
,
= 2 A
GS
I
S
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
= 0
V
, d
/
d =
100 A/
m
s,
IS t
GS
I
S
= 2 A
Discharge Time
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
nC
nH
RR
L
0.65
0.20
1.5
S
D
G
L
T =
25
°
C
A
Gate Inductance
L
Gate Resistance
R
1.0
W
G
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse
T
e
st: pulse width = 300
m
s, duty cycle
v
2%.
6. Switching
characteristics are independent of operating junction temperatures.
3
NTTFS4985NF
TYPICAL PERFORMANCE CURVES
110
V
= 3.8 V
150
135
120
105
90
GS
100
90
80
70
60
50
40
30
20
10
0
4.0 V
4.2 V
V
DS
= 5 V
3.6 V
3.4 V
3.2 V
4.4 V to 4.5 V
7.5 V to 10 V
T =
125
°
C
J
75
3.0 V
2.8 V
60
T =
25
°
C
J
45
T =
−
55
°
C
J
30
2.6 V
2.4 V
15
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.030
0.025
0.020
0.015
0.010
0.005
0
5.50E
−
03
5.25E
−
03 T
= 25
°
C
J
I
= 30 A
D
5.00E
−
03
4.75E
−
03
4.50E
−
03
4.25E
−
03
4.00E
−
03
3.75E
−
03
3.50E
−
03
3.25E
−
03
3.00E
−
03
2.75E
−
03
2.50E
−
03
2.25E
−
03
T =
25
°
C
J
V
= 4.5 V
GS
V
GS
= 10 V
2.0
3.0
V
4.0
5.0
6.0
7.0
8.0
9.0 10
5
20 35 50 65 80 95 110
125 140 155
I ,
DRAIN CURRENT (A)
, GATE
−
TO
−
SOURCE VOLTAGE (V)
GS
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
1.00E
−
01
1.00E
−
02
1.00E
−
03
1.00E
−
04
1.00E
−
05
V
GS
= 0 V
I
V
= 20 A
D
= 10 V
GS
T =
150
°
C
J
T =
125
°
C
J
0.9
0.8
0.7
0.6
T =
25
°
C
J
0
5
10
15
20
25
−
50
−
25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
4
NTTFS4985NF
TYPICAL PERFORMANCE CURVES
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
Q
T
10
8
V
= 0 V
GS
T =
25
°
C
J
C
iss
6
Q
2
Q
gs
gd
4
C
I
= 30 A
oss
D
600
400
200
0
T =
25
°
C
V
V
J
2
= 15 V
= 10 V
C
DD
GS
rss
0
0
5
10
15
20
25
30
0
4
6
8
10 12 14 16 18 20 22 24 26 28 30
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
V
= 15 V
= 10 A
= 10 V
V
GS
= 0 V
DD
I
D
T =
25
°
C
J
V
GS
t
d(off)
t
f
t
r
t
d(on)
1
1
10
R ,
GATE RESISTANCE (
W
)
100
0.0
0.1
0.2
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
0.3
0.4
0.5
0.6
0.7
V
G
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
55
1000
100
10
V
= 20 V
GS
50
45
40
35
30
25
20
15
10
5
I
D
= 32 A
Single Pulse
= 25
°
C
T
C
10
m
s
100
m
s
1 ms
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.01
dc
0
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (
°
C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
5
NTTFS4985NF
TYPICAL PERFORMANCE CURVES
100
10
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
0.01
SINGLE PULSE
0.00001
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (s)
Figure 13. Thermal Response
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3×3.3, 0.65P
CASE 511AB
1
SCALE 2:1
2X
ISSUE D
DATE 23 APR 2012
NOTES:
0.20
C
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. DIMENSION
D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X
b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWW
G
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
G
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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onsemi
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onsemi
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onsemi
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onsemi
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©
Semiconductor Components Industries, LLC, 2019
onsemi
,
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onsemi
” or its affiliates
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−
Marking.pdf
.
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−
is” and
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onsemi
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