onsemi-NTTFS5116PLTWG
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NTTFS5116PL
MOSFET
– Power
-60
V
,
–
20 A, 52 m
W
Features
•
Low R
DS(on)
•
Fast Switching
•
These Devices are Pb
−
Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
Applications
52 m
W
@
−
10 V
72 m
W
@
−
4.5 V
•
Load Switches
•
DC Motor Control
•
DC
−
DC Conversion
−
60 V
−
20 A
P
−
Channel MOSFET
D (5
−
8)
MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol Value Unit
V
DSS
−
60
V
V
A
Gate
−
to
−
Source Voltage
V
GS
20
Continuous Drain
I
D
T =
25
°
C
−
5.7
−
4.0
3.2
A
G (4)
Current R
q
JA
T =
100
°
C
A
Power Dissipation R
P
W
A
T =
25
°
C
T =
100
°
C
A
q
D
JA
A
S (1,2,3)
1.6
Steady
State
Continuous Drain
I
D
T
= 25
°
C
= 100
°
C
= 25
°
C
−
20
−
14
40
C
MARKING DIAGRAM
Current R
q
JC
T
C
1
1
S
S
S
G
D
D
D
D
Power Dissipation
P
D
W
T
C
5116
AYWW
G
G
WDFN8
(
m
8FL)
R
q
JC
T
C
= 100
°
C
20
Pulsed Drain Current
t =
10
m
s
p
I
−
76
A
DM
CASE 511AB
Operating Junction and Storage
T
e
mperature
T ,
stg
−
55 to
+175
°
C
J
T
5116
A
= Specific Device Code
= Assembly Location
=
Y
e
ar
Source Current (Body Diode)
I
S
−
20
A
Y
Single Pulse Drain
−
to
−
Source Ava-
L = 0.1 mH
lanche Energy
E
45
30
mJ
A
AS
WW
G
= Work Week
= Pb
−
Free Package
I
AS
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
THERMAL RESISTANCE MAXIMUM RATINGS
NTTFS5116PLTAG
WDFN8 1500/
T
a
pe
& Reel
(Pb
−
Free)
Parameter
Symbol
Value
Unit
°
C/W
Junction
−
to
−
Case – Steady
R
3.8
NTTFS5116PLTWG WDFN8 5000/
T
a
pe
& Reel
q
JC
(Pb
−
Free)
Junction
−
to
−
Ambient – Steady
R
47
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
q
JA
1. Surface
−
mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
©
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
June, 2019
−
Rev. 2
NTTFS5116PL/D
NTTFS5116PL
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
−
250
m
A
−
60
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
69.7
mV/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
I
T =
25
°
C
−
1.0
−
100
100
m
A
DSS
J
V
DS
= 0
V
,
=
−
60 V
GS
V
T =
125
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0
V
, V
=
20 V
nA
GSS
DS
GS
V
V
GS
= V
, I
=
−
250
m
A
−
1
−
3
V
GS(TH)
DS
D
Negative Threshold
T
e
mperature
Coefficient
V
/T
−
6.2
mV/
°
C
GS(TH)
J
Drain
−
to
−
Source On Resistance
R
V
=
−
10 V
=
−
4.5 V
I
=
−
6 A
37
51
11
52
72
m
W
S
DS(on)
GS
D
V
GS
I
=
−
4.4 A
D
Forward Transconductance
g
FS
V
=
−
15
V
, I
=
−
6 A
DS D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
C
1258
127
84
25
14
1
pF
iss
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
V
= 0
V
, f =
1
.0 MHz, V
=
−
30 V
DS
oss
GS
C
rss
Q
V
=
−
10
V
, V
=
−
48
V
, I
=
−
5 A
nC
nC
G(TOT)
GS
DS
D
V
GS
=
−
4.5
V
, V
=
−
48
V
, I
=
−
5 A
DS D
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Plateau Voltage
Q
G(TH)
Q
4
GS
GD
GP
V
GS
=
−
4.5
V
, V
=
−
48
V
, I
=
−
5 A
DS
D
Q
V
7
3.1
5.3
V
Gate Resistance
R
W
G
Turn
−
On Delay Time
Rise Time
t
15
58
30
37
ns
d(on)
t
r
V
GS
=
−
4.5
V
, V
=
−
48
V
,
DS
I
=
−
5 A, R
= 6
W
D
G
Turn
−
Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T =
25
°
C
−
0.79
−
0.64
20
−
1.2
V
SD
J
V
S
= 0
V
,
GS
I
=
−
5 A
T =
125
°
C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
15
a
V
= 0
V
, d
/
d =
−
100 A/
m
s,
IS t
GS
I
S
=
−
5 A
Discharge Time
5
b
Reverse Recovery Charge
Q
19
nC
RR
2. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
3. Switching
characteristics are independent of operating junction temperatures.
2
NTTFS5116PL
TYPICAL CHARACTERISTICS
40
30
20
10
0
40
V
≥
10 V
DS
V
GS
= 10 V
V
= 4.5 V
GS
30
20
10
0
V
= 4 V
GS
T =
25
°
C
J
V
GS
= 3.5 V
T =
125
°
C
J
V
= 3 V
GS
T =
−
55
°
C
J
0
1
2
3
4
5
2
3
4
5
6
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.075
0.065
0.055
0.045
0.035
0.080
0.070
0.060
0.050
0.040
0.030
T =
25
°
C
I
=
−
6 A
J
D
T =
25
°
C
J
V
GS
= 4.5 V
V
= 10 V
15
GS
2
4
6
8
10
5
10
20
25
30
35
40
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Figure 4. On
−
Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10,000
1,000
100
I
V
=
−
4.4 A
V
GS
= 0 V
D
= 4.5 V
GS
T =
150
°
C
J
T =
125
°
C
J
−
50
−
25
0
25
50
75
100 125 150 175
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (
°
C)
J
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTTFS5116PL
TYPICAL CHARACTERISTICS
10
1800
1600
1400
1200
1000
800
600
400
200
0
Q
T
V
= 0 V
GS
T =
25
°
C
J
8
6
4
2
0
C
iss
Q
Q
gd
gs
V
DS
=
−
48 V
I
D
=
−
5 A
C
oss
T =
25
°
C
J
C
rss
0
10
20
30
40
50
60
0
5
10
15
20
25
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
40
30
20
10
0
1000
100
10
V
=
−
48 V
=
−
5 A
=
−
4.5 V
DD
V
= 0 V
GS
I
D
T =
25
°
C
J
V
GS
t
f
t
r
t
d(off)
t
d(on)
1
1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
10
R ,
GATE RESISTANCE (
W
)
100
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1
45
30
15
0
1 ms
10 ms
100
m
s
10
m
s
V
=
−
10 V
GS
Single Pulse
= 25
°
C
T
C
dc
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
25
50
75
100
125
150
175
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
T , STARTING JUNCTION TEMPERATURE (
°
C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
4
NTTFS5116PL
TYPICAL CHARACTERISTICS
100
10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
1
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3×3.3, 0.65P
CASE 511AB
ISSUE D
1
DATE 23 APR 2012
SCALE 2:1
2X
NOTES:
0.20
C
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. DIMENSION
D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X
b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWW
G
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
G
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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