onsemi-NTUD3169CZT5G
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NTUD3169CZ
MOSFET
– Small Signal,
Complementar
y
,
S
OT-963,
1.0 x 1.0 mm
20
V
,
2
20 mA / -200 mA
Features
V
R
Max
I Max
D
•
Complementary MOSFET Device
(BR)DSS
DS(on)
•
Offers a Low R
Solution in the Ultra Small 1.0×1.0 mm
DS(on)
1.5
W
@ 4.5 V
2.0
W
@ 2.5 V
3.0
W
@ 1.8 V
4.5
W
@ 1.5 V
5.0
W
@
−
4.5 V
Package
•
1.5 V Gate
V
o
ltage Rating
•
Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
•
This is a Pb
−
Free Device
N
−
Channel
0.22 A
20 V
P
−
Channel
6.0
W
@
−
2.5 V
7.0
W
@
−
1.8 V
10
W
@
−
1.5 V
−
0.2 A
20 V
Applications
•
Load Switch with Level Shift
•
Optimized for Power Management in Ultra Portable Equipment
PINOU
T
:
S
OT
−
963
MAXIMUM RATINGS
(T =
25
°
C unless otherwise specified)
J
S
1
G
1
D
2
1
6
5
4
D
1
Parameter
Drain
−
to
−
Source Voltage
Symbol Value Unit
V
20
8
V
V
DSS
Gate
−
to
−
Source Voltage
V
GS
2
3
G
2
N
−
Channel
Continuous Drain
T = 25
°
C
220
160
280
−
200
−
140
−
250
125
A
Steady
State
T = 85
°
C
A
S
2
t
v
5 s
Steady
State
T = 25
°
C
A
I
D
mA
P
−
Channel
Continuous Drain
T = 25
°
C
A
T
o
p View
T = 85
°
C
A
t
v
5 s
Steady
State
T = 25
°
C
A
MARKING
DIAGRAM
Power Dissipation
T = 25
°
C
A
P
D
mW
t
v
5 s
200
800
2 M
1
SOT
−
963
CASE 527AD
Pulsed Drain Current
N
−
Channel
t =
10
m
s
p
I
mA
DM
P
−
Channel
−
600
2
M
= Specific Device Code
= Date Code
Operating Junction and Storage
T
e
mperature
T ,
−
55 to
150
°
C
J
T
STG
I
200
260
mA
S
ORDERING INFORMATION
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 s)
°
C
T
L
†
Device
NTUD3169CZT5G
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface
−
mounted on FR4 board using the minimum recommended pad size,
1 oz. Cu.
SOT
−
963
(Pb
−
Free)
8000 /
T
a
pe & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
2. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
June, 2019
−
Rev. 1
NTUD3169CZ/D
NTUD3169CZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
1000
600
Unit
°
C/W
R
q
JA
3. Surface
−
mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
N
P
I
= 250
m
A
20
D
V
V
GS
= 0
V
V
(BR)DSS
I
D
=
−
250
m
A
−
20
Zero Gate Voltage Drain Current
T =
25
°
C
50
200
−
50
−
200
100
−
100
100
100
J
N
P
V
= 0
V
, V
=
5
.0 V
GS DS
T =
85
°
C
J
I
I
nA
DSS
T =
25
°
C
J
V
GS
= 0
V
, V
=
−
5.0 V
DS
T =
85
°
C
J
Zero Gate Voltage Drain Current
N
P
N
P
V
= 0
V
, V
=
1
6 V
DS
GS
T =
25
°
C
J
nA
nA
DSS
V
GS
= 0
V
, V
=
−
16 V
DS
Gate
−
to
−
Source Leakage Current
I
V
DS
= 0
V
, V
= 5.0
V
GSS
GS
Gate Threshold Voltage
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
V
= V
0.4
1.0
−
1.0
1.5
5.0
2.0
6.0
3.0
7.0
4.5
10
V
I
= 250
m
A
GS
DS
D
V
GS(TH)
I
D
=
−
250
m
A
−
0.4
Drain
−
to
−
Source On Resistance
V
= 4.5 V, I
= 100
mA
0.75
2.0
GS
D
V
GS
=
−
4.5
V
, I
=
−
100 mA
D
V
= 2.5 V, I
= 50 mA
1.0
GS
D
V
=
−
2.5
V
, I
=
−
50 mA
2.6
GS
D
V
= 1.8
V
, I
=
2
0 mA
1.4
GS
D
R
W
DS(on)
V
=
−
1.8
V
, I
=
−
20 mA
3.4
GS
D
V
= 1.5 V, I
= 10 mA
1.8
GS
D
V
=
−
1.5 V, I
=
−
10 mA
4.0
GS
GS
D
V
= 1.2 V, I
= 1.0 mA
2.8
GS
D
V
=
−
1.2 V, I
=
−
1.0 mA
6.0
D
Forward Transconductance
V
= 5.0
V
, I
=
1
25 mA
0.48
0.35
0.6
DS
D
g
FS
S
V
V
DS
=
−
5.0
V
, I
=
−
125 mA
D
Source
−
Drain Diode Voltage
V
SD
V
= 0
V
, I
=
1
0 mA
T =
25
°
C
J
1.0
GS
S
V
GS
= 0
V
, I
=
−
10 mA
−
0.6
−
1.0
S
CAPACITANCES
Input Capacitance
C
12.5
3.6
ISS
f = 1 MHz, V
= 0 V
GS
Output Capacitance
C
OSS
C
RSS
N
P
V
= 15 V
DS
Reverse Transfer Capacitance
Input Capacitance
2.6
pF
C
13.5
3.8
ISS
f = 1 MHz, V
= 0 V
GS
=
−
15 V
Output Capacitance
C
OSS
C
RSS
V
DS
Reverse Transfer Capacitance
2.0
4.
Switching characteristics are independent of operating junction temperatures
2
NTUD3169CZ
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
GS
Turn
−
On Delay Time
Rise Time
t
16.5
25.5
142
80
d(ON)
t
r
V
GS
= 4.5
V
, V
=
1
0
V
, I
=
2
00 mA,
DD D
N
P
R
= 2.0
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
ns
Turn
−
On Delay Time
Rise Time
t
26
d(ON)
t
r
46
V
D
=
−
4.5
V
, V
=
−
15
V
,
DD
GS
I
=
−
200 mA, R
= 2.0
W
G
Turn
−
Off Delay Time
Fall Time
t
196
145
d(OFF)
t
f
4. Switching
characteristics are independent of operating junction temperatures
3
NTUD3169CZ
TYPICAL CHARACTERISTICS (N
−
CHANNEL)
0.4
0.3
0.2
0.4
V
GS
= 2 thru 5 V
T =
−
55
°
C
T =
25
°
C
J
J
V
DS
≥
5 V
1.8 V
T =
25
°
C
T =
125
°
C
J
J
1.6 V
1.4 V
0.3
0.2
1.2 V
0.1
0
0.1
0
0
1
2
3
4
5
0
1
2
3
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
4
3
2
1.50
1.25
1.00
0.75
0.50
T =
25
°
C
J
I
= 220 mA
D
T =
25
°
C
J
V
= 2.5 V
= 4.5 V
GS
V
GS
1
0
0.25
0
0
1
2
3
4
5
0.05 0.10
0.15
0.20
0.25
0.30
0.35 0.40
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance vs. Gate Voltage
Figure 4. On
−
Resistance vs. Drain Current and
Gate Voltage
1.75
1.50
1.25
1.00
10,000
1000
V
GS
= 0 V
I
= 100 mA
D
V
= 4.5 V
GS
T =
150
°
C
J
T =
125
°
C
J
100
10
0.75
0.50
−
50
−
25
0
25
50
75
100
125 150
0
4
8
12
16
20
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
4
NTUD3169CZ
TYPICAL CHARACTERISTICS (N
−
CHANNEL)
20.0
17.5
15.0
12.5
10.0
7.50
5.00
1000
V
= 0 V
GS
V
= 10 V
= 200 mA
= 4.5 V
DD
I
D
T =
25
°
C
J
C
V
GS
iss
t
d(off)
100
t
f
t
t
r
C
oss
d(on)
10
1
C
rss
2.50
0
0
5
10
15
20
1
10
R ,
GATE RESISTANCE (
W
)
100
GATE
−
TO
−
SOURCE AND DRAIN
−
TO
−
SOURCE VOLTAGE (V)
G
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
0.200
V
GS
= 0 V
0.175
0.150
T =
25
°
C
J
0.125
0.100
0.075
0.050
0.025
0
0
0.2
0.4
0.6
0.8
1
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
5
NTUD3169CZ
TYPICAL CHARACTERISTICS (P
−
CHANNEL)
0.36
0.32
0.36
2.0 V
= 2.2 thru 5 V
T =
25
°
C
T =
125
°
C
J
T =
−
55
°
C
J
V
DS
≥
5 V
J
0.32
0.28
0.24
0.20
0.16
0.12
0.08
V
GS
1.8 V
T =
25
°
C
J
0.28
0.24
0.20
0.16
0.12
0.08
1.6 V
1.4 V
1.2 V
0.04
0
0.04
0
0
1
2
3
4
5
0
1
2
3
4
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 10. On
−
Region Characteristics
Figure 11. Transfer Characteristics
12
8
4
3
2
T =
25
°
C
J
I
= 200 mA
D
T =
25
°
C
J
V
= 2.5 V
= 4.5 V
GS
V
GS
4
0
1
0
1
2
3
4
5
0.05 0.10
0.15
0.20
0.25
0.30
0.35
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 12. On
−
Resistance vs. Gate Voltage
Figure 13. On
−
Resistance vs. Drain Current
and Gate Voltage
1.75
1.50
1.25
1.00
10,000
1000
I
= 200 mA
D
V
GS
= 0 V
V
= 4.5 V
GS
T =
150
°
C
J
T =
125
°
C
J
100
10
0.75
0.50
−
50
−
25
0
25
50
75
100
125 150
0
4
8
12
16
20
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 14. On
−
Resistance Variation with
Figure 15. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
6
NTUD3169CZ
TYPICAL CHARACTERISTICS (P
−
CHANNEL)
18
16
14
12
10
1000
100
C
iss
t
t
d(off)
f
t
r
V
= 0 V
GS
t
d(on)
C
8
6
4
oss
T =
25
°
C
J
10
1
V
I
= 10 V
= 200 mA
= 4.5 V
DD
C
D
rss
2
0
V
GS
0
2
4
6
8
10
12 14 16
18 20
1
10
R ,
GATE RESISTANCE (
W
)
100
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
G
Figure 16. Capacitance Variation
Figure 17. Resistive Switching Time Variation
vs. Gate Resistance
0.18
V
GS
= 0 V
0.16
0.14
0.12
0.10
0.08
0.06
0.04
T =
25
°
C
J
0.02
0
0
0.2
0.4
0.6
0.8
1
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
Figure 18. Diode Forward Voltage vs. Current
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
963
CASE 527AD
−
01
ISSUE E
DATE 09
FEB 2010
SCALE 4:1
NOTES:
D
X
Y
1. DIMENSIONING
AND TOLERANCING PER ASME
Y14.5M, 1994.
A
2. CONTROLLING
DIMENSION: MILLIMETERS
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
6
5
4
3
H
E
E
1
2
MILLIMETERS
DIM MIN
NOM
0.37
0.15
0.12
1.00
0.80
0.35 BSC
1.00
0.19 REF
0.10
MAX
0.40
0.20
0.17
1.05
0.85
C
TOP VIEW
e
A
b
C
D
E
0.34
0.10
0.07
0.95
0.75
SIDE VIEW
6X
L
e
H
E
0.95
0.05
1.05
0.15
L
L2
GENERIC
MARKING DIAGRAM*
6X
b
6X
L2
0.08
X Y
XM
1
BOTTOM VIEW
STYLE 1:
PIN 1.
EMITTER 1
2. BASE
1
STYLE 2:
STYLE 3:
PIN 1.
CATHODE 1
2. CATHODE
1
X
M
= Specific Device Code
= Month Code
PIN 1.
EMITTER 1
2. EMITTER2
3. BASE
2
3. COLLECTOR
2
4. EMITTER
2
5. BASE
2
3. ANODE/ANODE
2
4. CATHODE
2
5. CATHODE
2
6. ANODE/ANODE
1
4. COLLECTOR
2
5. BASE
1
6. COLLECTOR
1
*This information is generic. Please refer
to device data sheet for actual part
marking.
6. COLLECTOR
1
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
CATHODE
2. ANODE
Pb
−
Free indicator, “G” or microdot “
G
”,
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
may or may not be present.
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
RECOMMENDED
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. ANODE
5. CATHODE
6. CATHODE
MOUNTING FOOTPRINT
6X
0.35
6X
0.20
STYLE 7:
PIN 1.
CATHODE
2. ANODE
STYLE 8:
STYLE 9:
PIN 1.
SOURCE 1
2. GATE
1
PIN 1.
DRAIN
2. DRAIN
3. GATE
3. CATHODE
4. CATHODE
5. ANODE
3. DRAIN
2
4. SOURCE
2
5. GATE
2
PACKAGE
OUTLINE
4. SOURCE
5. DRAIN
6. DRAIN
1.20
6. CATHODE
6. DRAIN
1
STYLE 10:
PIN 1.
CATHODE 1
2. N/C
0.35
PITCH
3. CATHODE
2
4. ANODE
2
5. N/C
DIMENSIONS: MILLIMETERS
6. ANODE
1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON26456D
SOT
−
963, 1X1, 0.35P
PAGE 1 OF 1
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Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
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