onsemi-NTZD3155CT2G
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NTZD3155C
MOSFET
– Small Signal,
Complementary with ESD
Protection, SOT-563
20
V
,
5
40 mA / -430 mA
Features
I
Max
D
•
Leading Trench Technology for Low R
DS(on)
Performance
•
High Efficiency System Performance
•
Low Threshold
V
o
ltage
V
R
Typ
DS(on)
(BR)DSS
0.4
W
@ 4.5 V
0.5
W
@ 2.5 V
N
−
Channel
540 mA
20 V
•
ESD Protected Gate
0.7
W
@ 1.8 V
0.5
W
@
−
4.5 V
0.6
W
@
−
2.5 V
1.0
W
@
−
1.8 V
•
Small Footprint 1.6 x 1.6 mm
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
P
−
Channel
−
20 V
−
430 mA
Compliant
Applications
•
DC
−
DC Conversion Circuits
PINOU
T
:
S
OT
−
563
•
Load/Power Switching with Level Shift
•
Single or Dual Cell Li
−
Ion Battery Operated Systems
•
High Speed Circuits
S
1
G
1
D
2
1
6
5
4
D
1
•
Cell Phones, MP3s, Digital Cameras, and PDAs
2
3
G
2
MAXIMUM RATINGS
(T =
25
°
C unless otherwise specified)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol Value Unit
S
2
V
DSS
20
6
V
V
Gate
−
to
−
Source Voltage
V
GS
T
o
p View
N
−
Channel Continu-
ous Drain Current
T = 25
°
C
540
390
570
−
430
−
310
−
455
250
A
Steady
State
MARKING
DIAGRAM
T = 85
°
C
A
6
t
v
5 s
T = 25
°
C
A
1
I
mA
D
P
−
Channel Continu-
ous Drain Current
T = 25
°
C
A
TW M
G
Steady
State
SOT
−
563
−
6
CASE 463A
G
T = 85
°
C
A
t
v
5 s
T = 25
°
C
A
TW
M
= Specific Device Code
= Date Code
Power Dissipation
Steady
State
G
= Pb
−
Free Package
T = 25
°
C
A
P
mW
D
(Note: Microdot may be in either location)
t
v
5 s
280
1500
−
750
Pulsed Drain Current
N
−
Channel
P
−
Channel
ORDERING INFORMATION
t =
10
m
s
p
I
mA
DM
†
Device
Package
Shipping
Operating Junction and Storage
T
e
mperature
T ,
−
55 to
150
°
C
J
NTZD3155CT1G
NTZD3155CT2G
NTZD3155CT5G
T
STG
4000 /
T
a
pe & Reel
8000 /
T
a
pe & Reel
SOT
−
563
(Pb
−
Free)
Source Current (Body Diode)
I
S
350
260
mA
Lead
T
e
mperature for Soldering Purposes
(1/8” from case for 10 s)
°
C
T
L
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface
−
mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
June, 2019
−
Rev. 4
NTZD3155C/D
NTZD3155C
Thermal Resistance Ratings
Parameter
Symbol
Max
500
447
Unit
°
C/W
R
q
JA
2. Surface
mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
N
P
V
GS
= 0
V
20
V
I
= 250
m
A
(BR)DSS
D
I
D
=
−
250
m
A
−
20
Drain
−
to
−
Source Breakdown Voltage
V(
/T
J
18
mV/
°
C
m
A
BR)DSS
T
e
mperature Coefficient
Zero Gate Voltage Drain Current
I
N
P
N
P
P
N
V
= 0
V
, V
=
1
6 V
T =
25
°
C
1.0
−
1.0
2.0
DSS
GS
DS
J
V
GS
= 0
V
, V
=
−
16 V
DS
V
= 0
V
, V
=
1
6 V
T =
125
°
C
J
m
A
m
A
GS
GS
DS
V
= 0
V
, V
=
−
16V
−
5.0
$
2.0
$
5.0
DS
Gate
−
to
−
Source Leakage Current
I
V
DS
= 0
V
, V
= 4.5
V
GSS
GS
Gate Threshold Voltage
V
N
P
V
GS
= V
DS
0.45
1.0
V
I
= 250
m
A
GS(TH)
D
I
D
=
−
250
m
A
−
0.45
−
1.0
Gate Threshold
V
/T
−
1.9
−
mV/
°
C
GS(TH)
J
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
R
N
P
N
P
N
P
N
P
V
= 4.5 V, I
= 540
mA
0.4
0.5
0.5
0.6
0.7
1.0
1.0
1.0
0.55
0.9
0.7
1.2
0.9
2.0
DS(on)
GS
D
V
GS
=
−
4.5
V
, I
=
−
430 mA
D
V
= 2.5 V, I
= 500 mA
D
GS
W
V
GS
=
−
2.5
V
, I
=
−
300 mA
D
V
= 1.8
V
, I
=
3
50 mA
D
GS
V
GS
=
−
1.8
V
, I
=
−
150 mA
D
Forward Transconductance
g
FS
V
= 10
V
, I
=
5
40 mA
DS D
S
V
DS
=
−
10
V
, I
=
−
430 mA
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
80
13
150
25
ISS
f = 1 MHz, V
= 0 V
GS
Output Capacitance
C
OSS
C
RSS
N
P
V
= 16 V
DS
Reverse Transfer Capacitance
Input Capacitance
10
20
pF
C
105
15
175
30
ISS
f = 1 MHz, V
= 0 V
GS
=
−
16 V
Output Capacitance
C
OSS
RSS
V
DS
Reverse Transfer Capacitance
C
10
20
3. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
NTZD3155C
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
T
o
tal Gate Charge
Q
1.5
0.1
0.2
0.35
1.7
0.1
0.3
0.4
2.5
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
T
o
tal Gate Charge
Q
G(TH)
N
P
V
= 4.5
V
, V
=
−
10 V; I
= 540 mA
DS D
GS
Q
GS
GD
Q
nC
Q
2.5
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
G(TH)
V
GS
=
−
4.5
V
, V
=
1
0 V; I
=
−
380 mA
DS D
Q
GS
GD
Q
GS
Turn
−
On Delay Time
Rise Time
t
N
6.0
4.0
16
8.0
10
12
35
19
d(ON)
t
r
V
= 4.5
V
, V
=
−
10
V
, I
=
5
40 mA,
DD D
GS
R
= 10
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
ns
Turn
−
On Delay Time
Rise Time
t
d(ON)
P
t
r
V
GS
=
−
4.5
V
, V
=
1
0
V
, I
=
−
215 mA,
DD D
R
= 10
W
G
Turn
−
Off Delay Time
Fall Time
t
d(OFF)
t
f
Drain
−
Source Diode Characteristics
Forward Diode Voltage
V
N
P
N
P
I
= 350 mA
=
−
350 mA
= 350 mA
=
−
350 mA
0.7
1.2
SD
RR
S
V
GS
= 0
V
, T
=
2
5
°
C
V
J
I
S
−
0.8
−
1.2
Reverse Recovery Time
t
V
GS
= 0
V
,
I
S
6.5
13
ns
dIS/dt = 100 A/
m
s
I
S
4. Switching
characteristics are independent of operating junction temperatures
3
NTZD3155C
N
−
CHANNEL TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
1.2
1.0
0.8
0.6
0.4
0.2
0
1.8
V
DS
w
10 V
5.5 V
1.8 V
T =
25
°
C
J
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
T =
−
55
°
C
J
T =
100
°
C
V
= 1.6 V
= 1.4 V
J
GS
V
GS
= 2.0 V to 2.2 V
V
GS
T =
25
°
C
J
V
V
= 1.2 V
= 1.0 V
GS
GS
0
1
2
3
4
5
6
7
8
9
10
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.9
0.8
0.7
0.6
0.5
0.4
0.3
I
= 0.54 A
T =
25
°
C
J
D
T =
25
°
C
J
V
GS
= 1.8 V
V
GS
= 2.5 V
V
GS
= 4.5 V
1
2
3
4
5
6
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. On
−
Resistance versus
Gate
−
to
−
Source Voltage
Figure 4. On
−
Resistance versus Drain Current
and Gate Voltage
2
1.8
1.6
1.4
1.2
1
1000
100
10
V
GS
= 0 V
I
V
= 0.54 A
D
= 4.5 V
T =
150
°
C
GS
J
T =
100
°
C
J
0.8
0.6
−
50
−
25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
20
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
versus Voltage
4
NTZD3155C
N
−
CHANNEL TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
5
20
16
200
150
T =
25
°
C
Q
J
T
V
DS
4
3
2
1
0
V
GS
12
8
V
= 0 V
GS
100
50
0
C
ISS
Q
Q
GS
GD
0.4
V
DS
DS
= 0 V
DS
4
I
= 0.54 A
T =
25
°
C
D
C
J
OSS
0
1.6
0
5
10
15
20
0
0.2
0.6
0.8
1
1.2
1.4
V
Q ,
TOTAL GATE CHARGE (nC)
g
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage versus Total Charge
Figure 7. Capacitance Variation
0.6
100
10
1
V =
0 V
GS
T =
25
°
C
V
= 10 V
= 0.2 A
I
J
D
0.5
0.4
0.3
0.2
0.1
0
V
GS
= 4.5 V
t
d(OFF)
t
f
t
d(ON)
t
r
1
10
R ,
GATE RESISTANCE (
W
)
100
0.2
0.3
V
0.4
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
0.5
0.6
0.7
0.8
0.9
1
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
5
NTZD3155C
P
−
CHANNEL TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
1
1
T =
25
°
C
J
V
GS
=
−
2 V
V
DS
≥
−
10 V
−
1.6 V
0.8
0.8
0.6
0.4
V
GS
=
−
1.8 V
0.6
0.4
−
1.4 V
−
1.2 V
−
1 V
T =
−
55
°
C
J
0.2
0
0.2
0
25
°
C
100
°
C
1.5
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
2
2.5
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (V)
GS
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
1.4
0.8
T =
25
°
C
J
I
=
−
0.43 A
D
1.3
1.2
1.1
0.75
0.7
T =
25
°
C
J
V
GS
=
−
1.8 V
0.65
0.6
1.0
0.9
0.8
0.7
0.6
0.5
0.55
0.5
V
GS
=
−
2.5 V
0.45
0.4
0.1
0.2 0.3
0.4 0.5
0.6 0.7
0.8 0.9
1.0
1
2
3
4
5
6
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (V)
GS
−
I DRAIN
CURRENT (A)
D,
Figure 4. On
−
Resistance vs. Drain Current and
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Gate Voltage
Voltage
1.6
10000
I
D
=
−
0.43 A
V
GS
= 0 V
V
GS
=
−
4.5 V
1.4
1.2
1
T =
150
°
C
J
1000
100
10
T =
100
°
C
J
0.8
0.6
−
50
−
25
0
25
50
75
100
125 150
2
4
6
8
10
12
14
16
18
20
T , JUNCTION TEMPERATURE (
°
C)
J
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
6
NTZD3155C
P
−
CHANNEL TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
10
9
8
7
6
5
4
3
2
1
0
250
200
150
100
5
Q
V
= 0 V
T
T =
25
°
C
J
GS
4
−
V
−
V
GS
DS
C
ISS
3
2
Q
Q
GD
GS
C
OSS
50
0
1
0
C
RSS
I
=
−
0.215 A
T =
25
°
C
D
J
0
5
10
15
20
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
100
0.6
V
GS
= 0 V
T =
25
°
C
J
t
d(OFF)
0.4
t
f
t
r
10
t
d(ON)
0.2
0
V
=
−
10 V
=
−
0.215 A
=
−
4.5 V
DD
I
D
V
GS
1
1
10
R ,
GATE RESISTANCE (
W
)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
563, 6 LEAD
CASE 463A
6
ISSUE H
1
DATE 26 JAN 2021
SCALE 4:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT
−
563, 6 LEAD
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
SOT
−
563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX M
G
1
XX =
Specific Device Code
M
= Month Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT
−
563, 6 LEAD
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
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