onsemi-NTZD3158PT1G
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NTZD3158P
Small Signal MOSFET
−
20
V
,
−
430 mA, Dual P
−
Channel
with ESD Protection, SOT
−
563
Features
•
Low R
Improving System Efficiency
DS(on)
•
Low Threshold
V
o
ltage
V
R
Typ
I Max
D
(BR)DSS
DS(on)
•
ESD Protected Gate
0.5
W
@
−
4.5 V
0.6
W
@
−
2.5 V
•
Small Footprint 1.6 x 1.6 mm
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
−
20 V
−
430 mA
1.0
W
@
−
1.8 V
D
D
2
1
Applications
•
Load/Power Switches
G
G
2
1
•
Power Supply Converter Circuits
•
Battery Management
•
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
P
−
Channel
MOSFET
S
2
S
1
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted.)
J
MARKING DIAGRAM
6
Parameter
Drain
−
to
−
Source Voltage
Symbol Value
Unit
1
V
DSS
−
20
6.0
V
V
TJ M
G
SOT
−
563
−
6
CASE 463A
G
Gate
−
to
−
Source Voltage
V
GS
1
Continuous Drain Current
T = 25
°
C
−
430
mA
A
TJ
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
Steady
State
I
D
T = 85
°
C
A
−
310
(Note 1)
Power Dissipation
(Note 1)
Steady State
P
D
250
mW
mA
(Note: Microdot may be in either location)
PINOU
T
:
S
OT
−
563
Continuous Drain Current
(Note 1)
T = 25
°
C
−
455
−
328
280
A
t
v
5 s
I
D
T = 85
°
C
A
S
1
2
3
6
5
D
1
Power Dissipation
(Note 1)
t
v
5 s
P
D
mW
1
Pulsed Drain Current
t =
10
m
s
p
I
−
750
mA
DM
G
G
Operating Junction and Storage
T
e
mperature
T ,
STG
−
55 to
150
°
C
2
1
2
J
T
Source Current (Body Diode)
I
S
−
350
mA
4
S
2
D
Lead
T
e
mperature for Soldering Purposes
T
L
260
°
C
(1/8
″
from case for 10 s)
THERMAL RESISTANCE RATINGS
T
o
p View
Parameter
Symbol
Max
500
447
Unit
Junction
−
to
−
Ambient – Steady State (Note 1)
Junction
−
to
−
Ambient – t
v
5 s (Note 1)
°
C/W
ORDERING INFORMATION
R
q
JA
†
Device
NTZD3158PT1G
Package
Shipping
SOT
−
563
(Pb
−
Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using 1 in. sq. pad size
4000 /
T
a
pe & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
April, 2013
−
Rev. 0
NTZD3158P/D
NTZD3158P
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted.)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
=
−
250
m
A
−
20
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
V
/T
J
18
mV/
°
C
(BR)DSS
T
e
mperature Coefficient
Zero Gate Voltage Drain Current
I
V
= 0 V
T =
25
°
C
−
1.0
−
2.0
m
A
m
A
DSS
GS
J
V
DS
=
−
16 V
T =
125
°
C
J
Gate
−
to
−
Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
I
V
= 0
V
, V
=
“
4.5 V
“
2.0
GSS
DS
GS
V
V
= V
, I
=
−
250
m
A
−
0.45
−
1.0
V
GS(TH)
GS
DS
D
Negative Threshold
V
/T
−
1.9
mV/
°
C
GS(TH)
J
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
R
V
V
V
=
−
4.5
V
, I
=
−
430 mA
0.5
0.6
1.0
1.0
0.9
1.2
2.0
W
DS(on)
GS
GS
GS
D
=
−
2.5
V
, I
=
−
300 mA
D
=
−
1.8
V
, I
=
−
150 mA
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
=
−
10
V
, I
=
−
430 mA
S
DS
D
C
105
15
175
30
pF
ISS
V
= 0
V
, f =
1
.0 MHz,
DS
GS
Output Capacitance
C
OSS
RSS
V
=
−
16 V
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
10
20
Q
1.7
0.1
0.3
0.4
2.5
nC
ns
G(TOT)
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
G(TH)
V
V
=
−
4.5
V
, V
=
−
10
V
,
DS
GS
I
D
=
−
215 mA
Q
GS
GD
Q
SWITCHING CHARACTERISTICS
(Note 3)
Turn
−
On Delay Time
Rise Time
t
10
12
35
19
d(on)
t
r
=
−
4.5
V
, V
=
−
10
V
,
GS
I
DD
=
−
215 mA, R
= 10
W
D
G
Turn
−
Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
S
= 0
V
,
T =
25
°
C
J
−
0.8
−
1.2
V
GS
I
=
−
350 mA
Reverse Recovery Time
t
V
GS
= 0
V
,
d
I
/dt = 100 A/
m
s,
13
ns
RR
SD
I
=
−
350 mA
S
2. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
3. Switching
characteristics are independent of operating junction temperatures.
2
NTZD3158P
TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
1
1
T =
25
°
C
J
V
GS
=
−
2 V
V
DS
≥
−
10 V
−
1.6 V
0.8
0.8
0.6
0.4
V
GS
=
−
1.8 V
0.6
0.4
−
1.4 V
−
1.2 V
−
1 V
T =
−
55
°
C
J
0.2
0
0.2
0
25
°
C
100
°
C
1.5
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
2
2.5
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
GS
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
1.4
0.8
T =
25
°
C
J
I
=
−
0.43 A
D
1.3
1.2
1.1
0.75
0.7
T =
25
°
C
J
V
GS
=
−
1.8 V
0.65
0.6
1.0
0.9
0.8
0.7
0.6
0.5
0.55
0.5
V
GS
=
−
2.5 V
0.45
0.4
0.1
0.2 0.3
0.4 0.5
0.6 0.7
0.8 0.9
1.0
1
2
3
4
5
6
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
GS
−
I DRAIN
CURRENT (AMPS)
D,
Figure 4. On
−
Resistance vs. Drain Current and
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source
Gate Voltage
Voltage
1.6
10000
I
D
=
−
0.43 A
V
GS
= 0 V
V
GS
=
−
4.5 V
1.4
1.2
1
T =
150
°
C
J
1000
100
10
T =
100
°
C
J
0.8
0.6
−
50
−
25
0
25
50
75
100
125 150
2
4
6
8
10
12
14
16
18
20
T , JUNCTION TEMPERATURE (
°
C)
J
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTZD3158P
TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
10
9
8
7
6
5
4
3
2
1
0
250
200
150
100
5
QT
V
= 0 V
T =
25
°
C
J
GS
4
−
V
−
V
GS
DS
C
ISS
3
2
Q
Q
GD
GS
C
OSS
50
0
1
0
C
RSS
I
=
−
0.215 A
T =
25
°
C
D
J
0
5
10
15
20
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
GATE
−
TO
−
SOURCE OR DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
Q ,
TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
100
0.6
V
GS
= 0 V
T =
25
°
C
J
t
d(off)
0.4
t
f
t
r
10
t
d(on)
0.2
0
V
=
−
10 V
=
−
0.215 A
=
−
4.5 V
DD
I
D
V
GS
1
1
10
R ,
GATE RESISTANCE (
W
)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
4
NTZD3158P
PACKAGE DIMENSIONS
SOT
−
563, 6 LEAD
CASE 463A
ISSUE F
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETERS
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
−
X
−
A
L
6
5
2
4
3
MILLIMETERS
DIM MIN
NOM MAX
INCHES
NOM MAX
E
−
Y
−
MIN
H
E
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
1
b
5
6 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
1.60
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent
−
Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC
does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part.
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This literature is subject to all applicable copyright laws and is not for resale in any manner.
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T
:
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NTZD3158P/D
