onsemi-NTZS3151PT1G
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NTZS3151P
Small Signal MOSFET
−
20
V
,
−
950 mA, P
−
Channel SOT
−
563
Features
•
Low R
Improving System Efficiency
•
Low Threshold
V
o
ltage
DS(on)
V
R
DS(on)
Typ
I Max
D
•
Small Footprint 1.6 x 1.6 mm
(BR)DSS
120 m
W
@
−
4.5 V
144 m
W
@
−
2.5 V
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
−
20 V
−
950 mA
195 m
W
@
−
1.8 V
Applications
P
−
Channel MOSFET
•
Load/Power Switches
D
•
Battery Management
•
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
G
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted.)
J
Parameter
Drain
−
to
−
Source Voltage
Symbol Value Unit
V
DSS
−
20
8.0
V
V
S
Gate
−
to
−
Source Voltage
V
GS
MARKING
DIAGRAM
Continuous Drain Current
T =
25
°
C
−
860
−
690
170
mA
A
6
Steady
State
I
D
T =
70
°
C
A
1
TX M
G
Power Dissipation
Steady State
P
mW
mA
SOT
−
563
−
6
CASE 463A
D
G
Continuous Drain Current
T =
25
°
C
A
−
950
−
760
210
TX
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
t
v
5 s
I
D
T =
70
°
C
A
Power Dissipation
t
v
5 s
P
mW
D
(Note: Microdot may be in either location)
Pulsed Drain Current
t =
10
m
s
I
−
4.0
A
p
DM
PINOU
T
:
S
OT
−
563
Operating Junction and Storage
T
e
mperature
T ,
−
55 to
150
°
C
J
T
STG
D
D
1
2
3
6
5
D
D
Source Current (Body Diode)
I
−
360
mA
S
Lead
T
e
mperature for Soldering Purposes
T
260
°
C
L
(1/8
″
from case for 10 s)
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
720
600
Unit
4
S
G
°
C/W
R
q
JA
R
q
JA
T
o
p View
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
−
mounted on FR4 board using 1 in. sq. pad size
ORDERING INFORMATION
See detailed ordering and shipping information in the package
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
January, 2013
−
Rev. 3
NTZS3151P/D
NTZS3151P
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted.)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
V
= 0 V, I
=
−
250
m
A
−
20
V
(BR)DSS
GS
D
Drain
−
to
−
Source Breakdown Voltage
V
/T
−
13
mV/
°
C
(BR)DSS
J
T
e
mperature Coefficient
Zero Gate Voltage Drain Current
= 0 V
T =
25
°
C
J
−
1.0
−
5.0
m
A
GS
I
DSS
V
DS
=
−
20 V
T =
125
°
C
J
Gate
−
to
−
Source Leakage Current
Gate Threshold Voltage
I
V
= 0 V, V
=
“
8.0 V
“
100
nA
GSS
DS
GS
V
V
= V
, I
=
−
250
m
A
−
0.45
−
1.0
V
GS(TH)
GS
DS
D
Negative Threshold
V
/T
2.4
mV/
°
C
GS(TH)
J
T
e
mperature Coefficient
Drain
−
to
−
Source On Resistance
V
V
V
V
=
−
4.5
V
, I
=
−
950 mA
120
112
144
195
3.1
150
142
200
240
m
W
GS
GS
GS
GS
D
=
−
4.5
V
, I
=
−
770 mA
D
R
DS(on)
=
−
2.5
V
, I
=
−
670 mA
D
=
−
1.8
V
, I
=
−
200 mA
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
=
−
10 V, I
=
−
810 mA
S
DS
D
C
458
61
pF
ISS
V
= 0 V, f = 1.0 MHz,
DS
GS
Output Capacitance
C
C
OSS
RSS
V
=
−
16 V
Reverse Transfer Capacitance
T
o
tal Gate Charge
38
Q
5.6
0.6
0.9
1.2
nC
ns
G(TOT)
V
V
=
−
4.5 V, V
=
−
10 V;
DS
GS
Threshold Gate Charge
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Turn
−
On Delay Time
Q
G(TH)
I
D
=
−
770 mA
Q
GS
GD
Q
t
5.0
12
d(ON)
Rise Time
t
r
=
−
4.5 V, V
=
−
10 V,
GS
I
DD
=
−
950 mA, R
= 6.0
W
D
G
Turn
−
Off Delay Time
t
23.7
18
d(OFF)
Fall Time
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
T =
25
°
C
−
0.64
−
0.5
10.5
−
0.9
V
J
V
S
= 0 V,
GS
V
SD
I
=
−
360 mA
T =
125
°
C
J
Reverse Recovery Time
t
V
= 0 V, dI
/dt = 100 A/
m
s,
ns
RR
GS
S
I
S
=
−
360 mA
2. Pulse
T
e
st: pulse width
v
300
m
s, duty cycle
v
2%.
3. Switching
characteristics are independent of operating junction temperatures.
2
NTZS3151P
TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
4
3.5
3
4
V
DS
≥
−
10 V
−
1.8 V
−
1.6 V
3.5
3
V
V
=
−
3 V
=
−
2 V
GS
T =
25
°
C
J
GS
2.5
2.5
2
2
1.5
1
−
1.4 V
1.5
1
T =
−
55
°
C
J
−
1.2 V
−
1 V
4.5
0.5
0
0.5
0
25
°
C
125
°
C
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
0.5
1
1.5
2
2.5
3
−
V ,
GATE
−
TO
−
SOURCE VOLTAGE (VOLTS)
GS
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.3
0.2
0.3
T =
25
°
C
J
V
GS
=
−
4.5 V
V
GS
=
−
1.8 V
0.2
V
V
=
−
2.5 V
T =
125
°
C
J
GS
=
−
4.5 V
GS
0.1
0
0.1
0
T =
25
°
C
J
T =
−
55
°
C
J
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
−
I DRAIN
CURRENT (AMPS)
D,
−
I DRAIN
CURRENT (AMPS)
D,
Figure 4. On
−
Resistance vs. Drain Current and
Figure 3. On
−
Resistance vs. Drain Current and
Gate Voltage
Temperature
1.8
10000
1000
I
V
=
−
0.95 A
=
−
4.5 V
V
GS
= 0 V
D
T =
150
°
C
J
GS
1.6
1.4
1.2
T =
125
°
C
J
1
0.8
0.6
100
−
50
−
25
0
25
50
75
100
125 150
0
5
10
15
20
T , JUNCTION TEMPERATURE (
°
C)
J
−
V ,
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On
−
Resistance Variation with
Figure 6. Drain
−
to
−
Source Leakage Current
Temperature
vs. Voltage
3
NTZS3151P
TYPICAL PERFORMANCE CURVES
(T =
25
°
C unless otherwise noted)
J
1000
900
800
700
600
500
400
300
5
30
25
20
15
V
= 0 V
V
= 0 V
DS
GS
T =
25
°
C
J
QT
C
RSS
4
−
V
GS
3
2
C
ISS
Q
Q
GD
GS
10
5
1
0
200
100
0
C
OSS
I
=
−
0.77 A
T =
25
°
C
−
V
DS
D
J
0
10
5
0
5
10
15
20
25
0
1
2
3
4
5
6
−
V
GS
−
V
DS
Q ,
TOTAL GATE CHARGE (nC)
G
GATE
−
TO
−
SOURCE OR DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
1000
1.2
V
I
=
−
25 V
=
−
0.95 A
=
−
4.5 V
V
GS
= 0 V
DD
T =
25
°
C
J
D
1.0
0.8
0.6
0.4
V
GS
100
t
d(off)
t
r
f
t
10
1
t
d(on)
0.2
0
1
10
R ,
GATE RESISTANCE (
W
)
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8 0.9
−
V ,
SOURCE
−
TO
−
DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
Package
Shipping
NTZS3151PT1G
SOT
−
563
(Pb
−
Free)
4000 /
T
a
pe & Reel
NTZS3151PT1H
NTZS3151PT5G
SOT
−
563
(Pb
−
Free)
4000 /
T
a
pe & Reel
8000 /
T
a
pe & Reel
SOT
−
563
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
4
NTZS3151P
PACKAGE DIMENSIONS
SOT
−
563, 6 LEAD
CASE 463A
ISSUE F
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETERS
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
−
X
−
A
L
6
5
2
4
3
MILLIMETERS
DIM MIN
NOM MAX MIN
INCHES
NOM MAX
E
−
Y
−
H
E
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
1
b
5
6 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
E
1.60
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf.
SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC
does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLIC
A
T
ION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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: 800
−
282
−
9855
T
o
ll Free
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−
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−
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−
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.
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−
675
−
2175 or 800
−
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−
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o
ll Free USA/Canada
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−
344
−
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o
ll Free USA/Canada
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: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTSZ3151P/D
