onsemi-NVB072N65S3
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N-Channel, Automotive
SUPERFET
)
III, Easy-Drive
650
V
,
7
2 m
W
, 44 A
NVB072N65S3
Description
SuperFET III MOSFET is ON Semiconductor’s brand
−
new high
voltage super
−
junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on
−
resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss provide superior switching performance, and with
−
stand extreme dv/dt rate. Consequently, SuperFET III MOSFET
Easy
−
drive series helps manage EMI issues and allows for easier
design implementation.
BV
R
MAX
I MAX
D
DSS
DS(on)
650 V
72 m
Ω
ꢀ
ꢁ
ꢂ
V
44 A
D
Features
G
•
AEC
−
Q101 Qualified
•
Max Junction Temperature 150
°
C
S
•
Typ. R
(on) = 61 m
Ω
DS
N-Channel MOSFET
•
Ultra Low Gate Charge (Typ. Q
= 82 nC)
G
•
Low Effective Output Capacitance (Typ. C
(eff.) = 724 pF)
OSS
•
100% Avalanche Tested
D
•
These Devices are Pb
−
Free and are RoHS Compliant
G
S
Typical Applications
•
Automotive PHEV
−
BEV DC
−
DC Converter
•
Automotive Onboard Charger for PHEV
−
BEV
D2PAK
3 LEAD
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K
NVB
072N65S3
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
NVB072N65S3
= Specific Device Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2021
−
Rev. 4
NVB072N65S3/D
NVB072N65S3
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC
30
V
AC (f > 1 Hz)
Continuous (T
= 25
°
C)
30
V
I
D
Drain Current
44
A
C
Continuous (T
= 100
°
C)
28
A
C
I
Pulsed Drain Current
110
A
DM
E
MOSFET dv/dt
214
mJ
mJ
V/ns
V/ns
W
AS
AR
E
3.12
100
dv/dt
Power Dissipation
20
P
(T =
25
°
C)
C
312
D
Derate Above 25
°
C
2.5
W/
°
C
°
C
°
C
T ,T
Operating and Storage
T
e
mperature Range
−
55 to +150
300
J
STG
T
L
Maximum Lead
T
e
mperature for Soldering, 1/8
″
from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive
rating: pulse
−
width limited by maximum junction temperature.
2. I
= 4.8 A, R
= 25
Ω
, starting T
= 25
°
C.
AS
G
J
3.
I
< 44 A, di/dt
≤
200 A/ms, VDD
≤
BVDSS, starting T
= 25
°
C.
SD
J
4. Essentially
independent of operating temperature typical characteristics.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.37
62.5
40
Unit
°
C/W
°
C/W
°
C/W
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2
−
oz Copper), Max.
2
Thermal Resistance, Junction to Ambient (1 in
Pad of 2
−
oz Copper), Max.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
2
NVB072N65S3
NVB072N65S3
D PAK
−
3
T
a
pe and Reel
330 mm
24 mm
800 units
2
NVB072N65S3
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain
−
to
−
Source Breakdown Voltage
V
V
= 0
V
, I
= 1
m
A, T
= 25
°
C
650
700
−
−
−
−
−
−
V
V
DSS
GS
D
J
= 0
V
, I
= 1
m
A, T
= 150
°
C
GS
D
J
Δ
BVDSS /
Δ
TJ Breakdown
Voltage
T
e
mperature
I
D
= 1 mA, Referenced to 25
°
C
0.60
V/
°
C
Coefficient
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650
V
, V
= 0 V
−
−
−
0.30
7.30
−
1
μ
A
DSS
GS
= 520
V
, V
= 0 V, Tc =
1
25
°
C
−
GS
I
Gate to Body Leakage Current
=
30
V
, V
= 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
R
Gate to Source Threshold Voltage
V
V
V
V
V
, I
= 1.0 mA
2.5
−
−
4.5
72
−
V
GS(th)
DS
(
on)
GS =
DS
D
Static Drain to Source On Resistance
= 10
V
, I
=
2
2 A, T
= 25
°
C
61
m
Ω
m
Ω
S
GS
GS
DS
D
J
= 10
V
, I
=
2
2 A, T
= 100
°
C
−
107
29.7
D
J
g
FS
Forward Transconductance
= 20 V, I
= 44 A
−
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400
V
, V
= 0 V, f = 1
M
Hz
−
−
−
−
−
−
−
−
−
3300
72.8
14.6
724
−
−
−
−
−
−
−
−
−
pF
pF
pF
pF
pF
nC
nC
nC
Ω
iss
oss
rss
DS
GS
C
C
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Energy Related Output Capacitance
T
o
tal Gate Charge
C
V
V
= 0 V to 400
V
, V
= 0 V
GS
oss(eff.)
DS
C
= 0 V to 400
V
, V
= 0 V
104
oss(er.)
DS
GS
Q
82.0
23.3
34.0
0.685
V
DS
= 400
V
, V
=
1
0
V
, I
=
4
4 A
g(tot)
GS
D
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Resistance
gs
Q
gd
R
f = 1 MHz
G
SWITCHING CHARACTERISTICS
t
Turn
−
On Delay Time
Turn
−
On Rise Time
Turn
−
Off Delay Time
Fall Time
−
−
−
−
26.3
50
−
−
−
−
ns
ns
ns
ns
V
= 400
V
, I
=
4
4 A, V
= 10
V
,
d(on)
DD
G
D
GS
R
t
r
t
65.9
32
d(off)
t
f
DRAIN
−
SOURCE DIODE CHARACTERISTICS
I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Plused Drain to Source Diode Forward Current
−
−
−
−
−
−
44
110
1.2
A
A
V
S
I
SM
V
SD
Drain to Source Diode Forward
Voltage
V
GS
= 0
V
, I
=
2
2 A
SD
t
Reverse Recovery Time
V
GS
= 0
V
, I
=
4
4 A dI
/dt = 100 A/
μ
s
−
−
576
−
−
nS
rr
SD
F
Q
Reverse Recovery Charge
14.3
μ
C
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
NVB072N65S3
TYPICAL CHARACTERISTICS
90
40
V
V
Pulse Duration = 250
μ
s
T =
25
°
C
J
Pulse Duration = 250
μ
s
T =
25
°
C
J
GS
GS
20 V
T
o
p
10 V
20 V
T
o
p
10 V
30
20
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
60
30
0
10
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, Drain to Source Voltage (V)
V
DS
, Drain to Source Voltage (V)
Figure 1. Saturation Characteristics
Figure 2. Saturation Characteristics
0.15
0.10
100
T
C
= 25
°
C
Pulse Duration = 250
μ
s
Duty Cycle = 0.5% Max
V
DS
= 5 V
V
GS
= 10 V
10
1
T =
25
°
C
J
V
GS
= 20 V
0.05
0
T =
150
°
C
J
T =
−
55
°
C
J
2
3
4
5
6
7
8
0
20
40
60
80
100
V
GS
, Gate to Source Voltage (V)
I ,
Drain Current (A)
D
Figure 3. Transfer Characteristic
Figure 4. On
−
Resistance Variation vs. Drain
Current and Gate Voltage
100K
V
GS
= 0 V
100
10
1
10K
1K
C
iss
C
oss
100
0.1
T =
150
°
C
J
10
1
f = 1 MHz
= 0 V
C
rss
0.01
V
GS
T =
25
°
C
T =
−
55
°
C
J
J
0.001
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
, Drain to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Forward Diode Characteristics
Figure 6. Capacitance vs. Drain to Source Volatage
4
NVB072N65S3
TYPICAL CHARACTERISTICS
(continued)
10
8
1.2
I
D
= 75 A
V
DS
= 130 V
I
D
= 10 mA
1.1
1.0
0.9
0.8
V
DS
= 400 V
6
4
2
0
0
15
30
45
60
75
90
−
80
−
40
0
40
80
120
160
Q ,
Gate Charge (nC)
G
T , Junction
T
e
mperature (
°
C)
J
Figure 7. Gate Charge vs. Gate to Source Voltage
Figure 8. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
3.0
2.5
2.0
1.5
1.0
10 us
100
10
100 us
1 ms
Operation in this Area
is Limited by R
10 ms
DC
DS(on)
1
Single Pulse
I
V
= 44 A
D
0.5
0
T =
150
°
C
= 10 V
J
GS
T
C
= 25
°
C
0.1
1
10
100
1000
−
80
−
40
0
40
80
120
160
T , Junction
T
e
mperature (
°
C)
J
V
DS
, Drain
−
Source Voltage (V)
Figure 9. Normalized R
DSON
vs. Junction
Temperature
Figure 10. Forward Bias Safe Operating Area
20
18
16
14
12
60
50
40
30
20
10
0
10
8
6
4
2
0
25
50
75
100
125
150
0
100
200
V ,
Drain to Source Voltage (V)
DS
300
400
500
600
700
T ,
Case
T
e
mperature (
°
C)
C
Figure 11. Maximum Continuous Drain Current
vs. Case Temperature
Figure 12. E
OSS
vs. Drain to Source Voltage
5
NVB072N65S3
TYPICAL CHARACTERISTICS
(continued)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
100
Current Max Limited
10
0
25
50
75
100
125
150
0.00001 0.0001 0.001
0.01
0.1
1
T ,
Case
T
e
mperature (
°
C)
C
t, Rectangular Pulse Duration (s)
Figure 13. Normalized Power Dissipation vs. Case
Temperature
Figure 14. Peak Current Capability
1.2
1.0
0.8
0.6
0.4
250
V
I
= V
DS
= 1 mA
GS
T =
150
°
C
J
D
200
150
100
Pulse Duration = 250
μ
s
Duty Cycle = 0.5% Max
I
D
= 44 A
T =
25
°
C
J
50
0
6
7
8
9
10
−
80
−
40
0
40
80
120
160
V
GS
, Gate to Source Voltage (V)
T , Junction
T
e
mperature (
°
C)
J
Figure 15. On
−
Resistance vs. Gate to Source Voltage
Figure 16. Normalized Gate Threshold Voltage
vs. Temperature
10
DUTY CYCLE
−
DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
0.01
SINGLE PULSE
Z
ꢄ
(t) = r(t) x R
ꢄ
JC
JC
Peak T
= P
x Z
(t) + T
ꢄ
JC C
J
DM
Duty Cycle, D = t
/t
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, Rectangular Pulse Duration (s)
Figure 17. Normalized Maximum Transient Thermal Impedance
SUPERFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D
2
PAK
−
3 (TO
−
263, 3
−
LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
=
Y
e
ar
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb
−
Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D
2
PAK
−
3 (TO
−
263, 3
−
LEAD)
PAGE 1 OF 1
DESCRIPTION:
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
©
Semiconductor Components Industries, LLC, 2018
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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:
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o
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