onsemi-NVB110N65S3F
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N-Channel, D2PAK
650
V
,
1
10 m
W
, 30 A
NVB110N65S3F
Description
®
SUPERFET III
MOSFET is ON Semiconductor’s brand
−
new high
voltage super
−
junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on
−
resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
650 V
110 m
W
@ 10 V
30 A
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET
MOSFET’s optimized reverse recovery
®
D
performance of body diode can remove additional component and
improve system reliability.
Features
•
700 V @ T
= 150
°
C
J
G
•
Typ. R
= 93 m
W
DS(on)
•
Ultra Low Gate Charge (Typ. Q
= 58 nC)
g
S
•
Low Effective Output Capacitance (Typ. C
•
100% Avalanche Tested
= 533 pF)
oss(eff.)
N
−
CHANNEL MOSFET
•
Qualified with AEC
−
Q101
•
These Devices are Pb
−
Free and are RoHS Compliant
D
Typical Applications
G
S
•
Automotive On Board Charger
•
Automotive DC/DC Converter for HEV
2
D PAK
−
3
TO
−
263
CASE 418AJ
MARKING DIAGRAM
&Z&3&K
NVB
110N65S3F
&Z
&3
&K
= Assembly Plant Code
= Data Code (
Y
e
ar & Week)
= Lot
NVB110N65S3F =
Specific Device Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
November, 2020
−
Rev. 5
NVB110N65S3F/D
NVB110N65S3F
Table 1. ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C unless otherwise stated)
C
Symbol
V
Parameter
Value
650
30
Unit
V
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
DSS
V
GS
−
DC
V
−
AC (f > 1 Hz)
30
I
D
Drain Current
−
Continuous (T
= 25
°
C)
30
A
C
−
Continuous (T
= 100
°
C)
19.5
69
C
I
Drain Current
A
mJ
A
DM
E
Avalanche Current
380
3.5
AS
AS
I
E
MOSFET dv/dt
2.4
mJ
V/ns
AR
dv/dt
100
50
Power Dissipation
P
T
C
= 25
°
C
240
1.92
−
55 to 150
300
W
W/
°
C
°
C
D
−
Derate Above 25
°
C
T , T
J
Operating Junction and Storage
T
e
mperature
stg
T
Maximum Lead
T
e
mperature for Soldering, 1/8
″
from Case for 5 Seconds
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive
rating: pulse
*
width limited by maximum junction temperature.
2. IAS
= 3.5 A, RG = 25
W
, starting T
= 25
°
C.
J
3. ISD
≤
15 A, di/dt
≤
200 A/_s, V
≤
400
V
,
s
tarting T
= 25
°
C.
DD
C
Table 2. THERMAL RESISTANCE RATINGS
Symbol
Parameter
Max
0.52
40
Unit
Thermal Resistance, Junction
−
to
−
Case, Max.
Thermal Resistance, Junction
−
to
−
Ambient, Max.
°
C/W
R
q
JC
R
q
JA
2
NVB110N65S3F
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain
−
to
−
Source Breakdown Voltage
V
V
= 0
V
, I
= 1 mA, T
= 25
°
C
650
700
−
−
−
−
−
V
V
DSS
GS
D
J
= 0
V
, I
= 10 mA, T
= 150
°
C
GS
D
J
D
BV
/
D
T
Breakdown Voltage
T
e
mperature Coefficient
Zero Gate Voltage Drain Current
I =
20 mA, Referenced to 25
°
C
D
0.61
−
−
V/
°
C
m
A
m
A
nA
DSS
J
I
V
V
V
= 650
V
, V
= 0 V
−
10
−
DSS
DS
DS
= 520
V
, T
=
1
25
°
C
−
128
−
DS
GS
C
I
Gate
−
to
−
Body Leakage Current
= 0
V
, I
= 1 mA, T
= 25
°
C
−
100
GSS
D
J
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
GS
= V
, I
= 0.74 mA
3.0
−
−
5.0
110
−
V
m
W
S
GS(th)
DS(on)
DS
D
R
Static Drain
−
to
−
Source On Resistance
Forward Transconductance
= 10
V
, I
=
1
5 A
93
17
D
g
FS
= 20
V
, I
=
1
5 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400
V
, V
= 0 V, f = 1
M
Hz
−
−
−
−
−
−
−
−
2560
50
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
T
o
tal Gate Charge at 10 V
Gate
−
to
−
Source Gate Charge
Gate
−
to
−
Drain “Miller” Charge
Equivalent Series Resistance
V
V
= 0 to 400
V
, V
= 0 V
553
83
oss(eff.)
DS
GS
C
= 0 to 400
V
, V
= 0 V
GS
oss(er.)
DS
Q
V
DS
V
GS
= 400
V
, I
=
1
5 A,
58
g(total)
D
Q
Q
19
gs
23
gd
ESR
F = 1 MHz
2
SWITCHING CHARACTERISTICS, V
= 10 V
GS
t
Turn-On Delay Time
Rise Time
V
V
= 400
V
, I
=
1
5 A,
−
−
−
−
29
32
61
16
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10
V
, R
=
4
.7
W
G
t
r
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
SOURCE
−
DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source
−
to
−
Drain Diode Forward Current
Maximum Pulsed Source
−
to
−
Drain Diode Forward Current
−
−
−
−
−
−
−
30
69
1.3
−
A
A
S
I
SM
V
SD
Source
−
to
−
Drain Diode Forward Voltage
Reverse
−
Recovery Time
V
V
= 0
V
, I
=
1
5 A
−
V
GS
SD
t
= 0
V
, I
=
1
5 A,
94
343
ns
nC
rr
GS
SD
dI /dt
= 100 A/
m
s
F
Q
Reverse
−
Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially
independent of operating temperature typical characteristics.
3
NVB110N65S3F
TYPICAL CHARACTERISTICS
100
100
V
GS
= 10 V
250
m
s Pulse
T
e
st
= 25
°
C
250
m
s Pulse
T
e
st
= 150
°
C
V
GS
= 10 V
T
T
C
C
8.0 V
8.0 V
7.0 V
6.5 V
7.0 V
6.5 V
10
10
6.0 V
5.5 V
6.0 V
5.5 V
1
1
0.1
1
10
20
0.2
2
20
V
DS
, DRAIN
−
SOURCE VOLTAGE (V)
V
DS
, DRAIN
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
25
5
C
Figure 2. On
−
Region Characteristics
150
5
C
100
0.3
0.2
V
= 20 V
DS
250
m
s Pulse
T
e
st
V
= 10 V
= 20 V
GS
10
T =
25
°
C
J
0.1
0
V
GS
T =
150
°
C
T =
−
55
°
C
J
J
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 3. Transfer Characteristics
Figure 4. On
−
Resistance Variation vs. Drain
Current and Gate Voltage
100K
10K
1K
V
= 0 V
GS
10
1
C
iss
T =
150
°
C
J
100
10
C
oss
T =
25
°
C
J
V
= 0 V
GS
0.1
f = 1 MHz
C
rss
C
C
C
= C
+ C
(C =
shorted)
gs gd
ds
iss
0.01
1
= C
+ C
oss
rss
ds
gd
= C
gd
T =
−
55
°
C
J
0.001
0.1
0
0.5
1.0
1.5
2.0
0.1
1
10
100
1K
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. Body Diode Forward Voltage
Figure 6. Capacitance Characteristics
Variation vs. Source Current and Temperature
4
NVB110N65S3F
TYPICAL CHARACTERISTICS
10
9
1.2
V
= 130 V
DS
V
= 0 V
= 10 mA
GS
I
D
= 15 A
I
D
8
1.1
1.0
7
V
DS
= 400 V
6
5
4
3
2
0.9
0.8
1
0
0
10
20
30
40
50
60
−
75
−
25
25
75
125
175
Q ,
TOTAL GATE CHARGE (nC)
G
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 7. Gate Charge Characteristics
Figure 8. Breakdown Voltage Variation vs.
Temperature
100
10
3.0
2.5
2.0
1.5
1.0
I
V
= 15 A
D
= 10 V
100
m
s
GS
R
Limit
DS(on)
1 ms
10 ms
1
T
C
= 25
°
C
R
= 0.52
°
C/W
q
0.5
0
JC
Single Pulse
100 ms/DC
100
, DRAIN
−
SOURCE VOLTAGE (V)
DS
0.1
−
75
−
25
25
75
125
175
1
10
1000
T , JUNCTION TEMPERATURE (
°
C)
J
V
Figure 9. On
−
Resistance Variation vs.
Figure 10. Maximum Safe Operating Area
Temperature
40
30
15.0
12.5
10.0
7.5
20
5.0
10
0
2.5
0
25
50
75
100
125
150
0
100
200
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
DS
300
400
500
600
T ,
CASE TEMPERATURE (
°
C)
V
C
Figure 11. Maximum Drain Current vs. Case
Temperature
Figure 12. E
OSS
vs. Drain
−
to
−
Source Voltage
5
NVB110N65S3F
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
1000
100
Current Limited Max
0.2
0
10
0
25
50
75
100
125
150
0.00001 0.0001 0.001
0.01
0.1
1
10
T ,
CASE TEMPERATURE (
°
C)
C
t, RECTANGULAR PULSE
Figure 13. Normalized Power Dissipation vs.
Case Temperature
Figure 14. Peak Current Capability
400
300
200
1.2
1.1
1.0
0.9
0.8
I
= 15 A
I
= 3 mA
D
D
T =
150
°
C
A
T =
25
°
C
A
100
0
0.7
0.6
6
7
8
9
10
−
75
−
25
25
75
125
175
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 15. R
DS(on)
vs. Gate Voltage
Figure 16. Normalized Gate Threshold Voltage
vs. Temperature
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Notes:
P
DM
Z
q
(t) = r(t) x R
q
JC
JC
0.01
0.01
R
= 0.4
°
C/W
q
JC
t
Peak T
= P
Duty Cycle, D = t
/t
x Z
(t) + T
JC C
1
q
J
DM
Single Pulse
0.00001
t
1
2
2
0.001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 17. Transient Thermal Response
6
NVB110N65S3F
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
2
†
NVB110N65S3F
NVB110N65S3F
D PAK
T
a
pe & Reel
330 mm
24 mm
800 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D
2
PAK
−
3 (TO
−
263, 3
−
LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
=
Y
e
ar
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb
−
Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D
2
PAK
−
3 (TO
−
263, 3
−
LEAD)
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