onsemi-NVBG015N065SC1
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DATA SHEET
M2, D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
650 V
18 m
W
@ 18 V
145 A
NVBG015N065SC1
Drain (TAB)
Features
•
Typ. R
= 12 m
W
@ V
= 18 V
DS(on)
GS
Typ. R
= 15 m
W
@ V
= 15 V
Gate (Pin 1)
DS(on)
GS
•
Ultra Low Gate Charge (Q
= 283 nC)
G(tot)
•
Low Effective Output Capacitance (C
= 424 pF)
oss
Driver Source (Pin 2)
•
100% Avalanche Tested
•
AEC
−
Q101 Qualified and P
P
A
P Capable
Power Source (Pins 3, 4, 5, 6, 7)
•
This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb
−
Free 2LI (on second level interconnection)
N
−
CHANNEL MOSFET
Typical Applications
•
Automotive On Board Charger
•
Automotive DC-DC Converter for EV/HEV
•
Automotive Traction Inverter
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
D2PAK
−
7L
CASE 418BJ
Parameter
Drain
−
to
−
Source Voltage
Symbol
Value
Unit
V
DSS
650
V
V
V
Gate
−
to
−
Source Voltage
V
GS
−
8/+22
−
5/+18
MARKING DIAGRAM
Recommended Operation
Values of Gate
−
Source Voltage
T
< 175
°
C
= 25
°
C
V
GSop
C
BG015N
065SC1
AYWWZZ
Continuous Drain
Steady
State
T
I
D
145
500
103
A
W
A
C
q
JC
Power Dissipation
P
D
R
q
JC
Continuous Drain
Current R
Steady
State
T
C
= 100
°
C
I
D
BG015N065SC1 = Specific Device Code
q
JA
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
Power Dissipation
P
D
250
W
R
q
JA
ZZ
= Lot Traceability
T
= 25
°
C
I
422
798
A
A
C
DM
Single Pulse Surge
Drain Current
Capability
T =
25
°
C, t
= 10
m
s,
A
I
DSC
p
R
= 4.7
W
G
ORDERING INFORMATION
Operating Junction and Storage
T
e
mperature
Range
T , T
−
55 to
+175
°
C
J
stg
†
Device
Package
Shipping
Source Current (Body Diode)
I
111
84
A
NVBG015N065SC1
D2PAK
−
7L
800 /
T
a
pe & Reel
S
Single Pulse Drain
−
to
−
Source Avalanche
E
AS
mJ
L
pk
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Maximum Lead
T
e
mperature for Soldering,
1/8
″
from Case for 10 Seconds
T
245
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface
mounted on a FR
−
4 board using1 in
pad of 2 oz copper.
2. The
entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive
rating, limited by max junction temperature.
4. E
of 84 mJ is based on starting T
= 25
°
C; L = 1 mH, I
= 13 A,
AS
DD
J
AS
V
= 50
V
, V
=
1
8
V
.
GS
©
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2022
−
Rev. 3
NVBG015N065SC1/D
NVBG015N065SC1
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.3
40
Unit
°
C/W
°
C/W
R
θ
JC
JA
R
θ
Table 2. ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
to
−
Source Breakdown Voltage
V
V
GS
= 0
V
, I
= 1
m
A
650
V
(BR)DSS
D
Drain
−
to
−
Source Breakdown Voltage
T
e
mperature Coefficient
V
/T
J
I =
20 mA, refer to 25
°
C
D
0.12
V/
°
C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
V
= 0
V
,
= 650 V
T =
25
°
C
10
1
m
A
mA
nA
DSS
GS
J
DS
T =
175
°
C
J
Gate
−
to
−
Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= +18/
−
5
V
, V
= 0 V
250
GSS
DS
Gate Threshold Voltage
V
R
V
= V
, I
= 25 mA
1.8
2.8
4.3
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain
−
to
−
Source On Resistance
V
GOP
−
5
+18
V
GS
V
GS
V
GS
V
DS
= 15 V, I
= 75 A, T
= 25
°
C
15
12
16
42
m
W
DS(on)
D
J
= 18 V, I
= 75 A, T
= 25
°
C
18
D
J
= 18 V, I
= 75 A, T
= 175
°
C
D
J
Forward Transconductance
g
FS
= 10 V, I
= 75 A
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
V
= 0
V
, f = 1
M
Hz,
= 325 V
4689
424
37
pF
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
Q
V
=
−
5/18
V
, V
=
5
20
V
,
283
72
nC
G(TOT)
GS
DS
I
= 75 A
D
Gate
−
to
−
Source Charge
Gate
−
to
−
Drain Charge
Q
Q
GS
64
GD
f = 1 MHz
1.6
W
Gate
−
Resistance
R
G
SWITCHING CHARACTERISTICS
Turn
−
On Delay Time
t
V
D
=
−
5/18
V
, V
=
4
00
V
,
23
26
ns
d(ON)
GS
DS
I
= 75 A, R
= 2.2
W
,
G
Rise Time
t
r
Inductive Load
Turn
−
Off Delay Time
t
49
d(OFF)
Fall Time
t
9.6
167
276
443
f
Turn
−
On Switching Loss
Turn
−
Off Switching Loss
T
o
tal Switching Loss
E
m
J
ON
E
E
OFF
TOT
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Continuous Drain
−
Source Diode Forward
I
V
GS
V
GS
V
GS
=
−
5
V
, T
=
2
5
°
C
111
422
A
A
V
SD
J
Current
Pulsed Drain
−
Source Diode Forward
I
=
−
5
V
, T
=
2
5
°
C
J
SDM
Forward Diode Voltage
V
=
−
5
V
, I
=
7
5 A, T
= 25
°
C
4.8
SD
SD
J
2
NVBG015N065SC1
J
Parameter
DRAIN
−
SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
=
−
5/18
V
, I
=
7
5 A,
28
234
23
ns
nC
m
J
A
RR
GS
S
SD
dI /dt
= 1000 A/
m
s
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
I
16
RRM
Ta
17
ns
ns
Discharge Time
Tb
11
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
NVBG015N065SC1
TYPICAL CHARACTERISTICS
280
240
200
160
120
80
4
15 V
V
= 18 V
GS
V
= 12 V
GS
12 V
3
2
15 V
18 V
10 V
1
0
9 V
40
0
8 V
0
1
2
3
4
5
6
7
8
9
10
0
40
80
120
160
200
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (A)
D
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs. Drain
Current and Gate Voltage
100
80
60
40
20
0
1.6
1.4
1.2
I
D
= 75 A
I
V
= 75 A
D
= 18 V
GS
T =
150
°
C
J
1.0
0.8
T =
25
°
C
J
8
10
12
14
16
18
−
75
−
50
−
25
0
25 50 75
100 125 150 175
T , JUNCTION TEMPERATURE (
°
C)
J
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 3. On
−
Resistance Variation with
Figure 4. On
−
Resistance vs. Gate
−
to
−
Source
Temperature
Voltage
280
240
200
160
120
80
280
100
T =
175
°
C
J
V =
0 V
GS
V
DS
= 10 V
T =
175
°
C
J
T =
−
55
°
C
J
T =
25
°
C
J
T =
−
55
°
C
J
T =
25
°
C
J
10
1
40
0
3
6
9
12
15
2
4
6
8
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
4
NVBG015N065SC1
TYPICAL CHARACTERISTICS
(continued)
10000
20
V
DD
= 390 V
I
D
= 75 A
C
iss
15
10
V
= 650 V
DD
1000
100
10
V
DD
= 520 V
C
oss
5
0
C
rss
f = 1 MHz
= 0 V
V
GS
−
5
650
0.1
1
10
100
0
50
100
150
200
250
300
350
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 7. Gate
−
to
−
Source Voltage vs. Total
Figure 8. Capacitance vs. Drain
−
to
−
Source
Charge
Voltage
100
160
120
80
V
GS
= 18 V
T =
25
°
C
J
10
40
0
Typical performance based
on characterization data
R
= 0.3
°
C/W
q
JC
1
25
50
75
100
125
150
175
0.001 0.01
0.1
1
t ,
TIME IN AVALANCHE (ms)
AV
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
100
10
100000
10000
Single Pulse
R
= 0.3
°
C/W
q
JC
T
C
= 25
°
C
10
m
s
100
m
s
1 ms
1000
100
10 ms
Single Pulse
T =
175
°
C
1
J
R
= 0.3
°
C/W
q
JC
DC
T
C
= 25
°
C
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
5
NVBG015N065SC1
TYPICAL CHARACTERISTICS
(continued)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
Single Pulse
Notes:
= 0.3
°
C/W
R
t
q
JC
1
Duty Cycle, D = t
/t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 13. Junction
−
to
−
Case Transient Thermal Response Curve
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D
2
PAK7 (TO
−
263
−
7L HV)
CASE 418BJ
ISSUE B
DATE 16 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84234G
D
2
PAK7 (TO
−
263
−
7L HV)
PAGE 1 OF 1
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